Aktuelle Publikatioen

- PHYSICAL REVIEW APPLIED 11, 044036 (2019)

Adam DeAbreu, Camille Bowness, Rohan J.S. Abraham, Alzbeta Medvedova,1 Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L.W. Thewalt, Stephanie Simmons

Characterization of the Si:Se+ Spin-Photon Interface

https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.11.044036

 

- Materials Science and Engineering: B Volume 244, May 2019, Pages 1-5

P.G. Sennikova, R.A. Korneva, N. V. Abrosimov, A.D. Bulanova, V.A. Gavvaa, A. M. Potapova

Feasibility study of the production of bulk stable Ge isotopes by the hydrogen plasma chemical reduction of fluorides

https://doi.org/10.1016/j.mseb.2019.04.019

 

- Review of Scientific Instruments 90, 035102 (2019)

S. Kowarik, L. Bogula, S. Boitano, F. Carlà, H. Pithan, P. Schäfer, H. Wilming, A. Zykov, and L. Pithan4

A novel 3D printed radial collimator for x-ray diffraction

https://aip.scitation.org/doi/10.1063/1.5063520

 

- Semiconductors, 2019, Vol. 53, pp. 296–297

V. B. Shumana, A. N. Lodygina, L. M. Portsela, A. A. Yakovlevaa, N. V. Abrosimovb, Yu. A. Astrova

Decomposition of a Solid Solution of Interstitial Magnesium in Silicon

https://link.springer.com/article/10.1134%2FS1063782619030175

 

- Appl. Phys. Lett. 114, 092103 (2019)

M. Wienold, S. G. Pavlov, N. V. Abrosimov, and H.-W. Hübers

High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source

https://www.researchgate.net/publication/331626218_High-resolution_background-free_spectroscopy_of_shallow-impurity_transitions_in_semiconductors_with_a_terahertz_photomixer_source

 

- Appl. Phys. Lett. 114, 102102 (2019)

M. Schubert, A. Mock, R.Korlacki, S. Knight, Z. Galazka, G. Wagner, V. Wheeler, M. Tadjer, K. Goto, V. Darakchieva

Longitudinal phonon plasmon mode coupling in β-Ga2O3

https://aip.scitation.org/doi/10.1063/1.5089145

 

- ECS Journal of Solid State Science and Technology, 8 (7) Q3083-Q3085 (2019)

A. Fiedler, R. Schewski, Z. Galazka, and K. Irmscher

Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)

http://jss.ecsdl.org/content/8/7/Q3083

 

- ECS Journal of Solid State Science and Technology, 8 (7) Q3083-Q3085 (2019)

A. Fiedler, R. Schewski, Z. Galazka, K. Irmscher

Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)

http://jss.ecsdl.org/content/8/7/Q3007.full

 

- Radiation Measurements 121 (2019) 49–53

Winicjusz Drozdowski, Michał Makowski, Marcin E. Witkowski, Andrzej J. Wojtowicz, Zbigniew Galazka, Klaus Irmscher, Robert Schewski

β-Ga2O3:Ce as a fast scintillator: An unclear role of cerium

https://www.sciencedirect.com/science/article/pii/S1350448718306358?via%3Dihub

 

- APL Materials 7, 022508 (2019);

M. Feneberg, C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, R. Goldhahn

Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift

https://doi.org/10.1063/1.5054351

 

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