Aktuelle Publikatioen

- Journal of Crystal Growth

Natasha Dropka, Martin Holena, Stefan Ecklebe, Christiane Frank-Rotsch, Jan Winkler

Fast forecasting of VGF crystal growth process by dynamic neural networks

https://doi.org/10.1016/j.jcrysgro.2019.05.022

 

- Semiconductors, 2019, Vol. 53, No. 6, pp. 789–794

N. Yarykin, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. Weber

DLTS Investigation of the Energy Spectrum of Si:Mg Crystals

10.1134/S1063782619060290

 

- Phys. Status Solidi B 2019, 256, 1800514

S. G. Pavlov, N. V. Abrosimov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Y. A. Astrov, R. Kh. Zhukavin, V. N. Shastin, K. Irmscher, A. Pohl, H.-W. Hübers

Even-Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in Silicon

DOI: 10.1002/pssb.201800514

 

- Appl. Phys. Lett. 114, 232905 (2019)

L. von Helden, L. Bogula, P.-E. Janolin, M. Hanke, T. Breuer, M. Schmidbauer, S. Ganschow, J. Schwarzkopf

Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric KxNa1−xNbO3 thin films

https://aip.scitation.org/doi/10.1063/1.5094405

 

- PHYSICAL REVIEW B 99, 245201 (2019)

M. Beck, N. V. Abrosimov, J. Hübner, M. Oestreich

Impact of optically induced carriers on the spin relaxation of localized electron spins in isotopically enriched silicon

10.1103/PhysRevB.99.245201

 

- Journal of Applied Physics 125, 195702 (2019)

S. Bin Anooz, A. Popp, R. Grüneberg, C. Wouters, R. Schewski, M. Schmidbauer, M. Albrecht, A. Fiedler, M. Ramsteiner, D. Klimm, K. Irmscher, Z. Galazka, and G. Wagner

Indium incorporation in homoepitaxial β- Ga2O3 thin films grown by metal organic vapor phase epitaxy

https://aip.scitation.org/doi/10.1063/1.5090213

 

- PHYSICAL REVIEW B 99, 195207 (2019)

R. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. Thewalt

Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in silicon

10.1103/PhysRevB.99.195207

 

- PHYSICAL REVIEW APPLIED 11, 044036 (2019)

Adam DeAbreu, Camille Bowness, Rohan J.S. Abraham, Alzbeta Medvedova,1 Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L.W. Thewalt, Stephanie Simmons

Characterization of the Si:Se+ Spin-Photon Interface

https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.11.044036

 

- Materials Science and Engineering: B Volume 244, May 2019, Pages 1-5

P.G. Sennikov, R.A. Kornev, N. V. Abrosimov, A.D. Bulanov, V.A. Gavva, A. M. Potapov

Feasibility study of the production of bulk stable Ge isotopes by the hydrogen plasma chemical reduction of fluorides

https://doi.org/10.1016/j.mseb.2019.04.019

 

- Review of Scientific Instruments 90, 035102 (2019)

S. Kowarik, L. Bogula, S. Boitano, F. Carlà, H. Pithan, P. Schäfer, H. Wilming, A. Zykov, and L. Pithan4

A novel 3D printed radial collimator for x-ray diffraction

https://aip.scitation.org/doi/10.1063/1.5063520

 

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