11-02-2019 and 12-02-2019, Leibniz ScienceCampus GraFOx - 3rd Semi-Annual Meeting

 

Montag, 11. Februar 2019 (PDI, Raum 515)

09:30 - 10:00 Welcome and Introduction

10:00 - 11:15 Highlight talks (I)
Joint computational and experimental examination of the phase stability of (InxGa1-x)2O3 ternary alloys
Chris Sutton / Charlotte Wouters
Fritz-Haber Institut Berlin / Leibniz Institut für Kristallzüchtung

Suboxide-related kinetics, etching, thermodynamics, and catalysis governing the MBE of Ga2O3, In2O3, SnO2 and (In,Ga)2O3
Oliver Bierwagen
Paul-Drude-Institut für Festkörperelektronik

Faceting and step flow growth in the homoepitaxy of Ga2O3
Martin Albrecht
Leibniz Institut für Kristallzüchtung

11:30 - 13:00 Poster Session 1 13:00-14:00

14:00 - 17:25 Highlight talks (II)
Structural defects and charge carrier mobility in homoepitaxial layers grown on (100) plane of β-Ga2O3
Andreas Fiedler
Leibniz Institut für Kristallzüchtung

β-Ga2O3 fundamental properties and their anisotropy
Saskia Fischer
Humboldt Universität zu Berlin

Theory optical properties
Claudia Draxl
Humboldt Universität zu Berlin

Anisotropy of optical and electrical properties of rutile SnO2
Rüdiger Goldhahn
Otto-von-Guericke-Universität Magdeburg

Ga2O3-based devices
Kornelius Tetzner
Ferdinand-Braun-Institut Berlin

Wrap up
Henning Riechert
Paul-Drude-Institut für Festkörperelektronik, Berlin

Poster Session 2

 

 

Dienstag, 12. Februar 2019 (PDI, Raum 515 and 503)

08:30 - 10:30 Scientific Advisory Board (SAB) Meeting (PDI, room no. 503)
10:45 - 12:15 SAB feedback meeting (PDI, room no. 515)
13:30 - 16:00 GraFOx internal Steering Committee Meeting (PDI, room no. 515)

 


 

Venue:

Paul-Drude-Institut für Festkörperelektronik

Raum 515 und 503

Hausvogteiplatz 5-7

D-10117 Berlin

 

Once you arrive at PDI, please contact the doorman at the ground floor, he will let you in / allow you to use the elevator to the 5th floor.

 

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