03.12.18, 14.00 Uhr Kolloquium Prof. Dr. Inga Fischer:
'Group-IV semiconductor nanostructures for optoelectronic device applications'

 

Am Montag, den 03.12.18 um 14.00 Uhr

spricht in unserem Institutskolloquium


Frau Prof. Dr. Inga Fischer
Chair Experimental Physics and Functional Materials at Brandenburg Technical University


zum Thema:

"Group-IV semiconductor nanostructures for optoelectronic device applications"

 


Abstract
The application of Si to optoelectronics is limited due to its indirect bandgap and the concomitant low efficiency in optoelectronic applications. Alloying Ge with Sn can lead to a direct bandgap group-IV-material if the Sn content is high enough, however, the lattice mismatch of ~15% makes the growth of binary GeSn alloys challenging. The ternary alloy SiGeSn enables decoupling bandgap and lattice constant and is, therefore, an interesting candidate for optoelectronic device fabrication. The use of nanostructures composed of both GeSn and SiGeSn alloys could potentially facilitate the growth of Sn-rich, direct bandgap semiconductor layers and offer additional degrees of freedom in order to tune the bandgap as well as enhance optical properties as a result of carrier confinement in one or more directions. In this talk, the fabrication of GeSn and SiGeSn quantum dot and quantum well structures based on molecular beam epitaxy as well as their characterization will be presented and applications in optoelectronic devices such as photodetectors or refractive index sensors will be discussed.


Gäste sind herzlich willkommen.

 

Veranstaltungsort:

Leibniz-Institut für Kristallzüchtung

Raum 316, Gebäude 19.31

Max-Born-Str. 2

D-12489 Berlin-Adlershof

 

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