Publikationen - Arbeitsgruppe Physikalische Charakterisierung

2018

M Gunes, M O Ukelge, O Donmez, A Erol, C Gumus, H Alghamdi, H V A Galeti, M Henini, M Schmidbauer, J Hilska, J Puustinen and M Guina
Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates
Semicond. Sci. Technol. 33 124015 (2018)
https://iopscience.iop.org/article/10.1088/1361-6641/aaea2e/meta

Andrea Dittmar, Jürgen Wollweber, Martin Schmidbauer, Detlef Klimm, Carsten Hartmann, Matthias Bickermann
Physical vapor transport growth of bulk Al1-xScxN single crystals
Journal of Crystal Growth 500 (2018) 74–79
https://www.sciencedirect.com/science/article/pii/S0022024818303300?via%3Dihub

Giuliano Duva, Linus Pithan, Clemens Zeiser, Berthold Reisz, Johannes Dieterle, Bernd Hofferberth, Paul Beyer, Laura Bogula, Andreas Opitz, Stefan Kowarik, Alexander Hinderhofer, Alexander Gerlach and Frank Schreiber
Thin-Film Texture and Optical Properties of Donor/Acceptor Complexes. Diindenoperylene/F6TCNNQ vs Alpha-Sexithiophene/ F6TCNNQ
J. Phys. Chem. C 2018, 122, 18705−18714
https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.8b03744?journalCode=jpccck

Zbigniew Galazka, Steffen Ganschow, Andreas Fiedler, Rainer Bertram, Detlef Klimm, Klaus Irmscher, Robert Schewski, Mike Pietsch, Martin Albrecht, Matthias Bickermann
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
Journal of Crystal Growth 486 (2018) 82–90
https://doi.org/10.1016/j.jcrysgro.2018.01.022

Dorothee Braun , Martin Schmidbauer, Michael Hanke and Jutta Schwarzkopf
Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films
Nanotechnology 29 (2018) 015701 (8pp)
https://doi.org/10.1088/1361-6528/aa98a4

2017

A. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, and K. Irmscher
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
Journal of Applied Physics 122, 165701 (2017)
https://aip.scitation.org/doi/10.1063/1.4993748

Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. Bickermann
Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
ECS J SOLID STATE SCI TECHN 6 (2017) Q3007 - Q3011
http://jss.ecsdl.org/content/6/2/Q3007.abstract

Yu. I. Mazur, V. G. Dorogan, L. Dias, D. Fan, M. Schmidbauer, M. E. Ware, Z. Ya. Zhuchenko, S. S. Kurlov, G. G. Tarasov, S.–Q. Yu, G. E. Marques, G. J. Salamo
Luminescent properties of GaAsBi /GaAs double quantum well heterostructures
J. Lumin. 188 (2017) 209 - 216
https://www.sciencedirect.com/science/article/pii/S0022231316315836?via%3Dihub

J. Schwarzkopf, D. Braun, M. Hanke, R. Uecker, M. Schmidbauer
Strain Engineering of Ferrolectric Domains in KxNa1-xNbO3 Epitaxial Layers
FRONTIERS IN MATERIALS 4 (2017) Art. 26
http://journal.frontiersin.org/article/10.3389/fmats.2017.00026/full

D. Szalkai, Z. Galazka, K. Irmscher, P. Tüttó, A. Klix, D. Gehre
β-Ga2O3 Solid-State Devices for Fast Neutron Detection
IEEE TRANS NUCL SCI 64 (2017) 1574 - 1579
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7913728

D. Klimm, C. Guguschev, D. J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M. D. Neumann, A. Kwasniewski, D. G. Schlom, M. Bickermann
Crystal growth and characterization of the pyrochlore Tb2Ti2O7
CrystEngComm 19 (2017) 3908 - 3914
http://pubs.rsc.org/en/content/articlelanding/2017/ce/c7ce00942a/unauth#!divAbstract

Christo Guguschev, Dirk J. Kok, Uta Juda, Reinhard Uecker, Sakari Sintonen, Zbigniew Galazka, Matthias Bickermann
Top-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity
Journal of Crystal Growth 468 (2017) 305–310
https://doi.org/10.1016/j.jcrysgro.2016.10.048

D. Braun, M. Schmidbauer, M. Hanke, A. Kwasniewski, J. Schwarzkopf
Tunable ferroelectric domain wall alignment in strained monoclinic KxNa1-xNbO3 epitaxial films
J. Appl. Phys. LETT 110 (2017) 232903
https://aip.scitation.org/doi/abs/10.1063/1.4985191

C. Guguschev, J. Philippen, D. J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram and M. Bickermann
Czochralski growth and characterization of cerium doped calcium scandate
CrystEngComm, 2017, 19, 2553
http://pubs.rsc.org/en/Content/ArticleLanding/2017/CE/C7CE00445A#!divAbstract

M. Schmidbauer, D. Braun, T. Markurt, M. Hanke, J. Schwarzkopf
Strain Engineering of Monoclinic Domains in KxNa1-xNbO3 Epitaxial Layers: A Pathway to Enhanced Piezoelectric Properties
NANOTECHNOLOGY 28 (2017) 24LT02
http://iopscience.iop.org/article/10.1088/1361-6528/aa715a/meta

M. Schmidbauer, M. Hanke, A. Kwasniewski, D. Braun, L. von Helden, C. Feldt, S. J. Leake, J. Schwarzkopf
Scanning X-Ray Nanodiffraction from Ferroelectric Domains in Strained K0.75Na0.25NbO3 Epitaxial Films Grown on (110) TbScO3
J. Appl. Crystallogr. 50 (2017) 519 - 525
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377345/

R. Uecker, R. Bertram, M. Brützam, Z. Galazka, T. M. Gesing, C. Guguschev, D. Klimm, M. Klupsch, A. Kwasniewski, D. G. Schlom
Large-Lattice-Parameter Perovskite Single-Crystal Substrates
J. Cryst. Growth 457 (2017) 137 - 142
https://www.sciencedirect.com/science/article/pii/S0022024816300860?via%3Dihub

Z. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht,S. Ganschow, T. Markurt, C. Guguschev, M. Bickermann
Melt Growth and Properties of Bulk BaSnO3 Single Crystals
J. Phys.-CONDENS MAT 29 (2017) 075701
http://iopscience.iop.org/article/10.1088/1361-648X/aa50e2/meta

Michele Baldini, Martin Albrecht, Andreas Fiedler, Klaus Irmscher, Robert Schewski, and G¨unter Wagner
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
ECS Journal of Solid State Science and Technology, 6 (2) Q3040-Q3044 (2017)
http://jss.ecsdl.org/content/6/2/Q3040.abstract

2016

R. Schewski, M. Baldini, K. Irmscher, A. Fiedler, T. Markurt, B. Neuschulz, T. Remmele, T. Schulz, G. Wagner, Z. Galazka, and M. Albrecht
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
Journal of Applied Physics 120, 225308 (2016)
http://dx.doi.org/10.1063/1.4971957

S. Ganschow, A. Kwasniewski, D. Klimm
Conditions for the Growth of Fe1-xO Crystals Using the Micro-Pulling-Down Technique.
J. Cryst. Growth 450 (2016) 203-206
https://www.sciencedirect.com/science/article/pii/S0022024816303232?via%3Dihub

S. Sintonen, S. Wahl , S. Richter, S. Meyer, S. Suihkonen, T. Schulz, K. Irmscher, A. N. Danilewsky, T. O. Tuomi, R. Stankiewicz, M. Albrecht
Evolution of Impurity Incorporation During Ammonothermal Growth of GaN
J. Cryst. Growth 456 (2016) 51 - 57
https://www.sciencedirect.com/science/article/pii/S0022024816304572?via%3Dihub

J. A. Steele, R. A. Lewis, J. Horvat, M. J. B. Nancarrow, M. Henini, D. Fan, Y. I. Mazur, M. Schmidbauer, M. E. Ware, S.-Q. Yu, G. J. Salamo
Surface Effects of Vapour-Liquid-Solid Driven Bi Surface Droplets Fromed During Molecular-Beam-Epitaxy of GaAsBi.
SCI REPORTS 6 (2016) 28860
https://www.nature.com/articles/srep28860

B. Cai, J. Schwarzkopf, E. Hollmann, D. Braun, M. Schmidbauer, T. Grellmann,R. Wördenweber
Characterization of Polar Nanoregions in Relaxor-Type Ferroelectric NaNbO3 Films.
Phys. Rev. B 93 (2016) 224107
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.224107

B. Cai, J. Schwarzkopf, E. Hollmann, D. Braun, M. Schmidbauer, T. Grellmann,R. Wördenweber
Electronic Characterization of Polar Nanoregions in Relaxor-Type Ferroelectric NaNbO3 Films.
Phys. Rev. B 93 (2016) 224107
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.224107

A.J. Green, K.D. Chabak, E.R. Heller, R.C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G. Wagner, Z. Galazka, S.E. Tetlak, A. Crespo, K. Leedy, G. H. Jessen
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs
IEEE ELECTR DEVICE L 37 (2016) 902 - 905
http://ieeexplore.ieee.org/document/7470552/?section=abstract

D.J. Kok, C. Guguschev, T. Markurt, M. Niu, R. Bertram, M. Albrecht, K. Irmscher
Origin of Brown Coloration in Top-Seeded Solution Grown SrTiO3 Crystals.
CrystEngComm 18 (2016) 4580 - 4586
http://pubs.rsc.org/en/content/articlelanding/2016/ce/c6ce00247a

C. Hartmann, J. Wollweber, S. Sintonen, A. Dittmar, L. Kirste, S. Kollowa, K. Irmscher, M. Bickermann
Preparation of Deep UV Transparent AlN Substrates with High Structural Perfection for Optoelectronic Devices.
CrystEngComm 18 (2016) 3488 - 3497
http://pubs.rsc.org/en/content/articlelanding/2016/ce/c6ce00622a#!divAbstract

M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, D. Klimm, R. Schewski, G. Wagner
Semiconducting Sn-Doped β-Ga2O3 Homoepitaxial Layers Grown by Metal Organic Vapour-Phase Epitaxy.
J. Mater. Sci. 51 (2016) 3650 – 3656
http://link.springer.com/article/10.1007/s10853-015-9693-6

S. Höfer, R. Uecker, A. Kwasniewski, J. Popp, Th. G. Mayerhöfer
Complete Dispersion Analysis of Single Crystal Yttrium Orthosilicate.
VIB SPECTROSC 83 (2016) 151 – 158
https://www.sciencedirect.com/science/article/pii/S0924203116300042?via%3Dihub

R.A. Kornev, P.G. Sennikov, D.A. Konychev, A.M. Potapov, D.Yu. Chuvilin, P.A. Yunin, S. A. Gusev, M. Naumann
Hydrogen Reduction of 98MoF6 in RF Discharge
J Radioanal Nucl Chem 309 (2016) 833-840
http://link.springer.com/article/10.1007/s10967-015-4687-z

J. Schwarzkopf, D. Braun, M. Hanke, A. Kwasniewski, J. Sellmann, M. Schmidbauer
Monoclinic MA Domains in Anisotropically Strained Ferroelectric K0.75Na0.25NbO3 Films on (110) TbScO3 Grown by MOCVD.
J. Appl. Crystallogr. 49 (2016) 375 - 384
http://dx.doi.org/10.1107/S1600576716000182

M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, G. Wagner
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
ECS J SOLID STAT SCI TECHN 6 (2016) Q1-Q5
http://jss.ecsdl.org/content/6/2/Q3040.full

2015

C. Guguschev, R. Tagle, U. Juda, A. Kwasniewski
Microstructural Investigations of SrTiO3 Single Crystals and Polysilicon Using a Powerful New X-Ray Diffraction Surface Mapping Technique.
J. Appl. Crystallogr. 48 (2015) 1883 - 1888
http://scripts.iucr.org/cgi-bin/paper?S1600576715019949

D. J. Kok, K. Irmscher, M. Naumann, C. Guguschev, Z. Galazka, R. Uecker
Temperature-Dependent Optical Absorption of SrTiO3
Phys. Status Solidi A 212 (2015) 1880 - 1887
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201431836

S. Höfer, R. Uecker, A. Kwasniewski, J. Popp, T.G. Mayerhöfer
Complete Dispersion Analysis of Single Crystalneodymium Gallate.
VIB SPECTROSC 78 (2015) 17 - 22
http://www.sciencedirect.com/science/article/pii/S0924203115000296

G. Wang, M. Amman, H. Mei, D. Mei, K. Irmscher, Y. Guan, G. Yang
Crystal Growth and Detector Performance of Large Size High-Purity Ge Crystals.
Mater. Sci. SEMICON PROC 39 (2015) 54 - 60
https://www.infona.pl/resource/bwmeta1.element.elsevier-19202aa3-b9f4-3700-bb53-300b37fd0ea6/tab/summary

S. Höfer, R. Uecker, A. Kwasniewski, J. Popp, T.G. Mayerhöfer
Dispersion Analysis of Arbitrarily Cut Uniaxial Crystals.
VIB SPECTROSC 78 (2015) 23 - 33
http://www.sciencedirect.com/science/article/pii/S0924203115000302

M. Baldini, M. Albrecht, D. Gogova, R. Schewski
Effect of Indium as a Surfactant in (Ga1-XInx)2O3 Epitaxial Growth on β-Ga2O3 by Metal Organic Vapour Phase Epitaxy.
Semicond. Sci. Technol. 30 (2015) 024013
http://dx.doi.org/10.1088/0268-1242/30/2/024013

E. Korhonen, F. Tuomisto, D. Gogova, G. Wagner, M. Baldini, Z. Galazka, R. Schewski, M. Albrecht
Electrical Compensation by Ga Vacancies in Ga2O3 Thin Films.
J. Appl. Phys. LETT 106 (2015) 242103
http://dx.doi.org/10.1063/1.4922814

R. Schewski, G. Wagner, M. Baldini, D. Gogova , Z. Glazaka, R. Uecker, T. Schulz, T. Remmele, T. Markurt, H. von Wenckstern, M. Grundmann, O. Bierwagen, P. Vogt, M. Albrecht
Epitaxial Stabilization of Pseudomorphic α-Ga2O3 on Sapphire (0001).
J. Appl. Phys. EXPRESS 8 (2015) 011101
http://iopscience.iop.org/article/10.7567/APEX.8.011101/meta

C. Guguschev, Z. Galazka , D. J. Kok , U. Juda , A. Kwasniewski, R. Uecker
Growth of SrTiO3 Bulk Single Crystals Using Edge-Defined Film-Fed Growth and the Czochralski Methods.
CrystEngComm 17 (2015) 4662 - 4668
http://pubs.rsc.org/en/Content/ArticleLanding/2015/CE/C5CE00798D#!divAbstract

D. Gogova, M. Schmidbauer, A. Kwasniewski
Homo- and Heteroepitaxial Growth of Sn-Doped β-Ga2O3 Layers by MOVPE.
CrystEngComm 17 (2015) 6744 - 6752
http://pubs.rsc.org/en/content/articlelanding/2015/ce/c5ce01106j#!divAbstract

Z. Galazka, D. Klimm, K. Irmscher, R. Uecker, M.Pietsch, R.Bertram, M. Naumann, M. Albrecht, A. Kwasniewski, R. Schewski, M. Bickermann
MgGa2O4 as a New Wide Bandgap Transparent Semiconducting Oxide: Growth and Properties of Bulk Single Crystals.
Phys. Status Solidi A 212 (2015) 1455 - 1460
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201431835/abstract

F. Willems, C. Smeenk, N. Zhavoronkov, O. Kornilov, I. Radu, M. Schmidbauer, M. Hanke, C. von Korff Schmising, M.J.J. Vrakking, S. Eisebitt
Probing Ultrafast Spin Dynamics with High-Harmonic Magnetic Circular Dichroism Spectroscopy.
Phys. Rev. B 92 (2015) 220405
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.220405

S. Bin Anooz, P. Petrik, M. Schmidbauer, T. Remmele, J. Schwarzkopf
Refractive Index and Interband Transitions in Strain Modified NaNbO3 Thin Films Grown by MOCVD.
J. Phys. D: APPL PHYS 48 (2015) 385303
http://iopscience.iop.org/article/10.1088/0022-3727/48/38/385303/meta

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