Publikationen - Arbeitsgruppe Silizium & Germanium

2018

V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, and G. A. Oganesyan
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge
SEMICONDUCTORS Vol. 52 No. 13 2018
https://www.researchgate.net/publication/329891224_Interaction_Rates_of_Group-III_and_Group-V_Impurities_with_Intrinsic_Point_Defects_in_Irradiated_Si_and_Ge

C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
Highly enriched 28Si reveals remarkable optical linewidt
PHYSICAL REVIEW B 98, 195201 (2018)
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.98.195201

R. J. S. Abraham, A. DeAbreu, K. J. Morse, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, and M. L. W. Thewalt
Mg-pair isoelectronic bound exciton identified by its isotopic fingerprint in 28 Si
PHYSICAL REVIEW B 98, 205203 (2018)
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.98.205203

S. G. Pavlov, N. Deßmann, B. Redlich, A. F. G. van der Meer, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, and H.-W. Hübers
Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon
PHYSICAL REVIEW X 8, 041003 (2018)
https://journals.aps.org/prx/abstract/10.1103/PhysRevX.8.041003

H.-J. Rost, R. Menzel, D. Siche, U. Juda, S. Kayser, F.M. Kießling, L. Sylla, T. Richter
Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method
Journal of Crystal Growth 500 (2018) 5–10
https://www.sciencedirect.com/science/article/pii/S002202481830352X?via%3Dihub

C. Ehlers, S. Kayser, D. Uebel, R. Bansen, T. Markurt, Th. Teubner, K. Hinrichs, O. Ernst, T. Boeck
In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth
CrystEngComm 20 (2018) 7170 - 7177
https://pubs.rsc.org/en/content/articlelanding/2018/ce/c8ce01170b#!divAbstract

Juerong Li, Nguyen H. Le, K. L. Litvinenko, S. K. Clowes, H. Engelkamp, S. G. Pavlov, H.-W. Hübers, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, C. R. Pidgeon, A. Fisher, Zaiping Zeng, Y.-M. Niquet, and B. N. Murdin
Radii of Rydberg states of isolated silicon donors
PHYSICAL REVIEW B 98, 085423 (2018)
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.98.085423

R. J. S. Abraham, A. DeAbreu, K. J. Morse, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons and M. L. W. Thewalt
Further investigations of the deep double donor magnesium in silicon
Phys. Rev. B 98, 045202
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.98.045202

K. Saeedi, N. Stavrias, B. Redlich, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, B. N. Murdin
Short lifetime components in the relaxation of boron acceptors in silicon
Phys. Rev. B 97, 125205
https://doi.org/10.1103/PhysRevB.97.125205

K. J. Morse, P. Dluhy, J. Huber, J. Z. Salvail, K. Saeedi, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, M. L. W. Thewalt
Zero-feld optical magnetic resonance study of phosphorus donors in 28-silicon
Phys. Rev. B 97, 115205
https://doi.org/10.1103/PhysRevB.97.115205

A. V. Inyushkin, A. N. Taldenkov, J. W. Ager, E. E. Haller, H.Riemann, N. V. Abrosimov, H.-J. Pohl, P. Becker
Ultrahigh thermal conductivity of isotopically enriched silicon
Journal of Applied Physics 123, 095112 (2018)
https://doi.org/10.1063/1.5017778

L. I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann
Divacancy-tin related defects in irradiated germanium
Journal of Applied Physics 123, 161595 (2018)
https://doi.org/10.1063/1.5010422

2017

N. V. Abrosimov, D. G. Aref’ev, P. Becker, H. Bettin, A. D. Bulanov, M. F. Churbanov, S. V. Filimonov, V. A. Gavva, O. N. Godisov, A. V. Gusev, T. V. Kotereva, D. Nietzold, M. Peters, A. M. Potapov, H.-J. Pohl, A. Pramann, H. Riemann, P.-T. Scheel, R. Stosch, S. Wundrack, S. Zakel
A new generation of 99.999% enriched 28Si single crystals for the determination of Avogadro’s constant
METROLOGIA 54 (2017) 599 – 609&
http://iopscience.iop.org/article/10.1088/1681-7575/aa7a62

B. C. Rose, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, S. A. Lyon
Coherent Rabi Dynamics of a Superradiant Spin Ensemble in a Microwave Cavity
Phys. Rev. X 7 (2017) 031002
https://journals.aps.org/prx/abstract/10.1103/PhysRevX.7.031002

R. Menzel, K. Dadzis, N.V. Abrosimov, H. Riemann
Crystal diameter stabilization during growth of Si from agranulate crucible
in: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 215 - 220
https://www.researchgate.net/publication/317578515_Crystal_diameter_stabilization_during_growth_of_Si_from_a_granulate_crucible

N. Arutyunov, V. Emtsev, M. Elsayed, R. Krause-Rehberg, N. Abrosimov, G. Oganesyan, V. Kozlovski
Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons
Phys. Status Solidi C 14 (2017) 1700120
https://doi.org/10.1002/pssc.201700120

R. Stübner, V. Kolkovsky, J. Weber, N. V. Abrosimov
Carbon-hydrogen related defects in SiGe observed after dc H plasma treatment
Phys. Status Solidi A 214 (2017) 1700329
https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.201700329

T. Mchedlidze, J. Weber, N. V. Abrosimov, H. Riemann
Deep carrier traps in as grown isotopically pure 28Si FZ crystal
Phys. Status Solidi A 214 (2017) 1700238&
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201700238

Y. A. Astrov, V. B. Shuman, L. М. Portsel, А. N. Lodygin, S. G. Pavlov, N. V. Abrosimov, V. N. Shastin, H.-W. Hübers
Diffusion doping of silicon with magnesium
Phys. Status Solidi A 214 (2017) 1700192
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201700192

L. I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann
Electronic absorption of interstitial boron-related defects in silicon
Phys. Status Solidi A 214 (2017) 1700245
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201700245

M. F. Churbanov, V. A. Gavva, A. D. Bulanov, N. V. Abrosimov, E. A. Kozyrev, I. A. Andryushchenko, V. A. Lipskii, S. A. Adamchik, O. Yu. Troshin, A. Yu. Lashkov, A. V. Gusev
Production of germanium stable isotopes single crystals
Cryst. Res. Technol. 52 (2017) 1700026
https://doi.org/10.1002/crat.201700026

K. Lauer, Ch. Möller, Ch. Teßmann, D. Schulze, N. V. Abrosimov
Activation energies of the InSi-Si, defect transitions obtained by carrier lifetime measurements
Phys. Status Solidi C 14 (2017) 1600033
https://doi.org/10.1002/pssc.201600033

N. Deßmann, S. G. Pavlov, V. V. Tsyplenkov, E. E. Orlova, A. Pohl, V. N. Shastin, R. Kh. Zhukavin, S. Winner, M. Mittendorff, J. M. Klopf, N. V. Abrosimov, H. Schneider, H.-W. Hübers
Dynamics of non-equilibrium charge carriers in p-germanium doped by gallium
Phys. Status Solidi B 254 (2017) 1600803
https://doi.org/10.1002/pssb.201600803

2016

D. Borisova, N. V. Abrosimov, K. Shcherbachev, V. Klemm, G. Schreiber, D. Heger, U. Juda, V. Bublik, H. Oettel
Evolution of Real Structure in Ge-Si Mosaic Crystals &
Cryst. Res. Technol. 51 (2016) 742 – 751
http://onlinelibrary.wiley.com/doi/10.1002/crat.201600248/abstract

A. V. Andrianov, A. O. Zakhar’in, R. Kh. Zhukavin, V. N. Shastin, D. V. Shengurov, N. V. Abrosimov
Terahertz Emission at Impurity Electrical Breakdown in Si(Li)
TECH PHYS LETT 42 (2016) 1031 - 1033
http://link.springer.com/article/10.1134/S1063785016100163

D. P. Franke, M. Szech, F. M. Hrubesch, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, M. L.W. Thewalt, M. S. Brandt
Electron Nuclear Double Resonance with Donor-Bound Excitons in Silicon
Phys. Rev. B 94 (2016) 235201
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.235201

N. Arutyunov, N. Bennett, N. Wight, R. Krause-Rehberg, V. Emtsev, N. Abrosimov, V. Kozlovski
Positron Probing of Disordered Regions in Neutron-Irradiated Silicon
Phys. Status Solidi B 253 (2016) 2175 - 2179
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600644/abstract

V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan, and D. S. Poloskin
Some Challenging Points in the Identification of Defects in Floating-Zone n-Type Silicon Irradiated with 8 and 15 MeV Protons
SEMICONDUCT 50 (2016) 1291 – 1298 &
https://link.springer.com/article/10.1134/S1063782616100122

S. G. Pavlov, N. Deßmann, A. Pohl, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov,S. Winnerl, H. Schneider, N. Stavrias, A. F. G. van der Meer, V. V. Tsyplenkov, K. A. Kovalevsky, R. Kh. Zhukavin, V. N. Shastin, N. V. Abrosimov, H.-W. Hübers
Dynamics of Nonequilibrium Electrons on Neutral Center States of Interstitial Magnesium Donorsin Silicon.
Phys. Rev. B, 94 (2016) 075208-1
ttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.075208

Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, N. V. Abrosimov, A. S. Kamyshan, A. V. Giro, K. A. Solyanikova
Formation of Donors in Germanium–Silicon Alloys Implanted with Hydrogen Ions with Different Energies
SEMICONDUCT 50 (2016) 1122 – 1124
http://link.springer.com/article/10.1134/S1063782616080182

A.P. Detochenko, S.A. Denisov, M.N. Drozdov, A.I. Mashin, V.A. Gavva, A.D. Bulanov, A.V. Nezhdanov, A.A. Ezhevskii, M.V. Stepikhova, V.Yu. Chalkov, V.N. Trushin, D.V. Shengurov, V.G. Shengurov, N.V. Abrosimov, H. Riemann
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties.
SEMICONDUCT 50 (2016) 345 - 348
http://link.springer.com/article/10.1134/S1063782616030064

K.J. Morse, R.J.S. Abraham, D.P. Franke, N.V. Abrosimov, M.L.W. Thewalt
Even-Parity Excited States of the Acceptor Boron in Silicon Revisited.
Phys. Rev. B 93 (2016) 125207
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.125207

K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin
Polarization of the Induced THz Emission of Donors in Silicon
SEMICONDUCT 50 (2016) 1673 - 1677
http://link.springer.com/article/10.1134/S1063782616120101

L. Khirunenko, M. Sosnin, A. Duvanskii, N. Abrosimov, H. Riemann
Boron-Related Defects in Low Temperature Irradiated Silicon.
SOLID STATE PHENOM 242 (2016) 285-289
https://www.scientific.net/SSP.242.285

R. Stübner, Vl. Kolkovsky, J. Weber, N. Abrosimov
Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy.
SOLID STATE PHENOM 242 (2016) 184 - 189
http://www.scientific.net/SSP.242.184

L. I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann
Defects Involving Interstitial Boron in Low-Temperature Irradiated Silicon
Phys. Rev. B 94 (2016) 235210
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.235210

V.V. Emtsev, N.V. Abrosimov, V.V. Kozlovskii, G.A. Oganesyan
Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons.
SOLID STATE PHENOM 242 (2016) 316-321
https://www.scientific.net/SSP.242.316

A.A. Ezhevskii, A.P. Detochenko, S.A. Popkov, A.A. Konakov, A.V. Soukhorukov, D.V. Guseinov, D.G. Zverev, G.V. Mamin, N.V. Abrosimov, H. Riemann
Spin Relaxation Times of Donor Centers Associated with Lithium in Monoisotopic 28 Si
SOLID STATE PHENOM 242 (2016) 322 - 326 &
https://www.scientific.net/SSP.242.322

A. V. Soukhorukov, D.V. Guseinov, A.V. Kudrin, S. A. Popkov, A. P. Detochenko, A. V. Koroleva, A. A. Ezhevskii, A. A. Konakov, N. V. Abrosimov, H. Riemann &
The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon.
SOLID STATE PHENOM 242 (2016) 327 - 331
http://www.scientific.net/SSP.242.327

2015

N. Deßmann, S.G. Pavlov, A. Pohl, N.V. Abrosimov, S. Winnerl, M. Mittendorff, R.Kh. Zhukavin, V.V. Tsyplenkov, D.V. Shengurov, V.N. Shastin, H.-W. Hübers
Lifetime-Limited, Subnanosecond Terahertz Germanium Photoconductive Detectors.
J. Appl. Phys. LETT 106 (2015) 171109
http://dx.doi.org/10.1063/1.4918712

F. Meurer, M. Neubert, N. Werner
Nonlinear State Estimation for the Czochralski Process Based on the Weighing Signal Using an Extended Kalman Filter.
J. Cryst. Growth 419 (2015) 57 - 63
https://www.researchgate.net/publication/273789923

K. Saeedi, M. Szech, P. Dluhy, J.Z. Salvail, K.J. Morse, H. Riemann, N.V. Abrosimov, N. Nötzel, K.L. Litvinenko, B.N. Murdin, M.L.W. Thewalt
Optical Pumping and Readout of Bismuth Hyperfine States in Silicon for Atomic Clock Applications.
Scientific Reports 5 (2015) 10493
http://www.nature.com/articles/srep10493

J. Z. Salvail, P. Dluhy, K. J. Morse, M. Szech, K. Saeedi, J. Huber, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M.L.W. Thewalt
Optically Enabled Magnetic Resonance Study of 75As and 121Sb in 28Si.
Phys. Rev. B 92 (2015) 195203-1 - 195203-11
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.195203

P.G. Sennikov, R.A. Kornev, N.V. Abrosimov
Production of Stable Silicon and Germanium Isotopes via Their Enriched Volatile Compounds.
J RADIOANAL NUCL CH 306 (2015) 21 - 30
http://link.springer.com/article/10.1007%2Fs10967-015-4192-4

R. Lo Nardo, G. Wolfowicz, S. Simmons, A.M. Tyryshkin, H. Riemann, N.V. Abrosimov, P. Becker, H.-J. Pohl, M. Steger, S.A. Lyon, M.L.W. Thewalt, J.J.L. Morton
Spin Relaxation and Donor-Acceptor Recombination of Se+ in 28-Silicon.
Phys. Rev. B 92 (2015) 165201
https://www.ucl.ac.uk/qsd/publications/publications/paper82.pdf

A. V. Andrianov, A. O. Zakhar’in, R. Kh. Zhukavin, V. N. Shastin, N. V. Abosimov, A. V. Bobylev
Terahertz Intracenter Photoluminescence of Silicon with Lithium at Interband Excitation.
JETP Letters, Optics and Laser Physics 100 (2015) 771-775
http://link.springer.com/article/10.1134/S0021364014240035

R.Kh. Zhukavin, K.A. Kovalevsky, M.L. Orlov, V.V. Tsyplenkov, N.A. Bekin, A.N. Yablonskiy, P.A. Yunin, S.G. Pavlov, N.V. Abrosimov, H.-W. Hübers, H.H. Radamson, V.N. Shastin
Terahertz-Range Spontaneous Emission Under the Optical Excitation 1f Donors in Uniaxially Stressed Bulk Silicon and SiGe/Si Heterostructures.
SEMICONDUCT 49 (2015) 13 - 18
http://link.springer.com/article/10.1134%2FS1063782615010273

S.G. Pavlov, N. Deßmann, A. Pohl, N.V. Abrosimov, M. Mittendorff, S.Winnerl, R.Kh. Zhukavin, V.V. Tsyplenkov, D.V. Shengurov, V.N. Shastin, H.-W. Hübers
Towards a Life-Time-Limited 8-Octave-Infrared Photoconductive Germanium Detector.
J. Phys. Conf. Series 647 (2015) 012070
http://iopscience.iop.org/article/10.1088/1742-6596/647/1/012070/pdf

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