2018

 

2017

 

- Journal of Crystal Growth Volume 462, 15 March 2017, Pages 18-23

A.Mogilatenko, A.Knauer, U.Zeimer, C.Hartmann, H.Oppermann, M.Weyers

Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth

https://doi.org/10.1016/j.jcrysgro.2016.12.099

 

2014

W. Guo, J. Kundin, M. Bickermann, H. Emmerich
A Study of the Step-flow Growth of the PVT-grown AlN Crystals by Multi-scale Modeling Method.
CRYSTENGCOMM 29 (2014) 6564 - 6577
doi:10.1039/C4CE00175C

 

C. Hartmann, A. Dittmar, J. Wollweber, M. Bickermann
Bulk AlN Growth by Physical Vapour Transport.
SEMICOND SCI TECH  29 (2014) 084002
doi:10.1088/0268-1242/29/8/084002

 

M. Woll, M. Burianek, D. Klimm, S. Gorfman, M. Mühlberg
Characterization of (Bi0.5Na0.5)1-xBaxTiOGrown by the TSSG Method.
J CRYST GROWTH 401 (2014) 351 - 354
doi:10.1016/j.jcrysgro.2013.11.102

 

Martens, F. Mehnke, C. Kuhn, C. Reich, V. Kueller, A. Knauer, C. Netzel, C. Hartmann, J. Wollweber, J. Rass, T. Wernicke, M. Bickermann, M. Weyers, M. Kneissl
Performance Characteristics of UV-C AlGaN Quantum Well Lasers Grown on Sapphire and Bulk AlN Substrates.
IEEE PHOTONIC TECH L 26 (2014) 342 - 345
doi:10.1109/LPT.2013.2293611

 

T. Paskova, M. Bickermann
Vapor Transport Growth of Wide Bandgap Materials.
In: P. Rudolph (ed.), Handbook of Crystal Growth, Bulk Crystal Growth - Basic Technologies, 2nd Edition, Vol. 2a (2014), 209 - 240
doi:10.1016/B978-0-444-63303-3.00016-X

2016

A. Mogilatenko, A. Knauer, U. Zeimer, C. Hartmann, H. Oppermann and M. Weyers
Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth    
JOURNAL OF CRYSTAL GROWTH           
https://doi.org/10.1016/j.jcrysgro.2016.12.099


F. Langhans, S. Kiefer, C. Hartmann, T. Markurt, T. Schulz, Ch. Guguschev, M. Naumann, S. Kollowa, A. Dittmar, J. Wollweber, M. Bickermann
Precipitates Originating from Tungsten Crucible Parts in AlN Bulk Crystals Grown by the PVT Method.     
CRYST RES TECHNOL 51 (2016) 129 - 136            
doi:10.1002/crat.201500201

 

C. Hartmann, J. Wollweber, S. Sintonen, A. Dittmar, L. Kirste, S. Kollowa, K. Irmscher, M. Bickermann
Preparation of Deep UV Transparent AlN Substrates with High Structural Perfection for Optoelectronic Devices.
CRYSTENGCOMM (2016) 3488 - 3497
doi:10.1039/C6CE00622A

 

M. Bickermann
Growth and Properties of Bulk AlN. 
In: M. Kneissl and J. Rass (eds.), III-Nitride Ultraviolet Emitters - Technology and Applications, Springer Series in Materials Science 227 (2016), S. 27 - 46
doi:10.1007/978-3-319-24100-5_2

Publications - Working Group Aluminium Nitride

 

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