Recent Publications

- Journal of Crystal Growth

M. Czupalla, N. Dropka, J. Fischer, A. Gybin, K. Irmscher, J. Janicskó-Csáthy, U. Juda, S. Kayser, W. Miller, M. Pietsch, F. M. Kießling

Technology development of high purity germanium crystals for radiation detectors


- Optical Materials

C. Guguschev, M. Schulze, V. Jary, E. Mihokova, K. Rubesova, V. Jakes, J. Barta, M. Nikl

Luminescence and scintillation properties of strontium hafnate and strontium zirconate single crystals


- Opt. Mater. Express 9 (12), 4782-4795 (2019)

S. A. Vázquez-Cordova, S. Aravazhi, A. M. Heuer, C. Kräünkel, Y. S. Yong, S. M. García-Blanco, J. L. Herek, and M. Pollnau

Energy-transfer upconversion and excited-state absorption in KGdxLuyEr1-x-y(WO4)2 waveguide amplifiers


- Semiconductors, 2019, Vol. 53, No. 9, pp. 1234–1237

V. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, and H.-W. Hübers

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission


- Journal of Crystal Growth

Natasha Dropka, Martin Holena, Stefan Ecklebe, Christiane Frank-Rotsch, Jan Winkler

Fast forecasting of VGF crystal growth process by dynamic neural networks


- Journal of Crystal Growth

Natasha Dropka, Aleksandar G. Ostrogorsky

Interface control in vertical Bridgman growth by shaped and flat rotating Baffles


- Optical Materials Express Vol. 9, Issue 9, pp. 3627-3637 (2019)

K. Hasse, G. Huber, and C. Kränkel

Selective etching of fs-laser inscribed high aspect ratio microstructures in YAG


- Journal of Crystal Growth 528 (2019) 125263

C. Guguschev, D. Klimm, M. Brützam, T.M. Gesing, M. Gogolin, H. Paik, A. Dittmar, V.J. Fratello, D.G. Schlom,

Single crystal growth and characterization of Ba2ScNbO6 – A novel substrate for BaSnO3 films


- Semiconductors

S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. Shastin

Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation



- Optical Materials Express, Vol. 9, No. 9


Tailoring the scintillation properties of -Ga2O3 by doping with Ce and codoping with Si


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