Recent Publications

- Review of Scientific Instruments 90, 035102 (2019)

S. Kowarik, L. Bogula, S. Boitano, F. Carlà, H. Pithan, P. Schäfer, H. Wilming, A. Zykov, and L. Pithan4

A novel 3D printed radial collimator for x-ray diffraction


- Appl. Phys. Lett. 114, 092103 (2019)

M. Wienold, S. G. Pavlov, N. V. Abrosimov, and H.-W. Hübers

High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source


- ECS Journal of Solid State Science and Technology, 8 (7) Q3083-Q3085 (2019)

A. Fiedler, R. Schewski, Z. Galazka, and K. Irmscher

Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)


- Radiation Measurements 121 (2019) 49–53

Winicjusz Drozdowski, Michał Makowski, Marcin E. Witkowski, Andrzej J. Wojtowicz, Zbigniew Galazka, Klaus Irmscher, Robert Schewski

β-Ga2O3:Ce as a fast scintillator: An unclear role of cerium


- Journal of Applied Physics 125, 082539 (2019)

Wei-Cheng Lee, Matthew J. Wahila, Shantanu Mukherjee, Christopher N. Singh, Tyler Eustance, Anna Regoutz, H. Paik, Jos E. Boschker, Fanny Rodolakis, Tien-Lin Lee, D. G. Schlom, and Louis F. J. Piper

Cooperative effects of strain and electron correlation in epitaxial VO2 and NbO2


- Journal of Crystal Growth 507 (2019) 299–306

Iryna Buchovska, Natasha Dropka, Stefan Kayser, Frank M.Kiessling

The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline silicon


- APL Mater. 7, 022511 (2019)

P. Mazzolini, P. Vogt, R. Schewski, C. Wouters, M. Albrecht, and O. Bierwagen

Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy


- Journal of Crystal Growth 505 (2019) 38–43

Tamino Hirsch, Detlef Klimm, Christo Guguschev, Albert Kwasniewski, Steffen Ganschow

Investigation of the Nd 2 O 3 –Lu 2 O 3 –Sc 2 O 3 phase diagram for the preparation of perovskite-type mixed crystals NdLu 1-x Sc x O 3


- APL Materials 7, 022515 (2019)

R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. Albrecht

Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting


- APL Mater. 7, 022512 (2019)

Zbigniew Galazka, Steffen Ganschow, Robert Schewski, Klaus Irmscher, Detlef Klimm Albert Kwasniewski, Mike Pietsch, Andreas Fiedler, Isabelle Schulze-Jonack, Martin Albrecht,Thomas Schröder, and Matthias Bickermann

Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals


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