Postdoctoral Position - Research Group: Ferroelectric Oxide Layers

The working group Ferroelectric Oxide Layers is offering a 3 year Postdoctoral Research position. The closing date for applications is December 5, 2016. Please find further information on the position here:

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April/17 Job Opening: PhD Position: project 'Advanced UV for Life - UV Power'

The Leibniz Institute for Crystal Growth (IKZ) performs basic and applied research in the fields of growth, characterization and processing of crystalline matter.

It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.

The IKZ is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and powerelectonics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development.

IKZ has excellent expertise and facilities for the characterization of low-dimensional systems in nanostructured III-V semiconductors. Among them an aberration corrected TEM/STEM, a Dualbeam FIB, a SEM equipped with cathodoluminescence and a computer cluster for performing STEM and molecular dynamics simulations.

 

IKZ invites applicants for a
PhD Position

within the framework of the project
 “Advanced UV for Life - UV Power”
(three-year grant by the BMBF within the program “Zwanzig20 – Partnerschaft für Innovation“)

starting as soon as possible.

 

Realizing high efficient and power light emitting diodes in the deep UV is the next challenge in the field of III-nitride technology. This requires epitaxial structures that reduce the dislocations by orders of magnitudes as well as an improvement of the active structure and new concepts for doping. Within the project the partners Ferdinand-Braun-Institut, OSRAM OS, and Technische Universität Berlin will study amongst others nano patterned sapphire substrates and high temperature annealing of sputtered buffer layers to reduce dislocation densities.

The thesis aims at a fundamental understanding of the defect processes during growth, of the chemistry and structure of the interfaces down to the atomic level. We are looking for a candidate performing structural analysis by high resolution transmission electron microscopy (TEM) of buffer layers and the active structure of the devices. The work comprises quantitative aberration corrected TEM and STEM, image simulation and modeling of growth and defect processes. In-situ TEM studies at atmospheric pressures and high temperatures are part of the work.

We are looking for a candidate with excellent knowledge of basic physics and of solid state physics. Expertise in highresolution transmission electron microscopy and image simulation would be an advantage. We are looking for a team player with a high level of communication skills and the assertiveness to work in a highly motivated team of researchers and technicians. Applicants must hold a diploma or an MSc degree in physics, crystallography, materials science or a related discipline. Furthermore, we expect good English language skills, scientific self-dependence, cooperativeness, and ability to work in a team.

 

Technical Information
Dr. Martin Albrecht
Tel.: +49 30 6392 3094
This email address is being protected from spambots. You need JavaScript enabled to view it.

 

The employment will be limited to three years, with the salary paid according to the TVöD (collective agreement for the public service).
Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equivalent opportunity employer and actively supports reconciliation of work and family life.

We await your informative application with reference to the job number 07/17, including the usual documents,
by May 5th, 2017. Please send them to:

Mrs. Ruthenberg
personal(at)ikz-berlin.de
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin 

May/17 Job Opening: (Student Assistant) & Master-thesis 'Charakterisierung und Modellierung monokristalliner Germaniumkristalle mit der Lateral Photovoltage Scanning (LPS)- Methode'

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren.
Das IKZ wird rechtlich vertreten durch den  Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.

 

Für das Thema:

"Charakterisierung und Modellierung monokristalliner Germaniumkristalle
mit der Lateral Photovoltage Scanning (LPS)- Methode"


vergibt das Leibniz-Institut für Kristallzüchtung ab sofort eine

Masterarbeit

 

Die Arbeit umfasst:
die Simulation und Untersuchung der physikalischen Zusammenhänge zwischen dem LPS-Messsignal von Germaniumkristallen im Vergleich zu Siliciumkristallen und Probenparametern wie:
•    Probengeometrie und Probenmaße
•    Spezifischer elektrischer Widerstand.

 

Erforderlich sind:
•    ein abgeschlossenes Bachelorstudium der Physik, mit aktueller Spezialisierung: Festkörperphysik.
•    Grundkenntnisse auf dem Gebiet der Simulation von Messprozessen (finite Volumen wünschenswert)  
•    Grundkenntnisse auf dem Gebiet der Züchtung und Charakterisierung von Halbleiterkristallen.

 

Kreative Mitarbeit in der Arbeitsgruppe, Fähigkeiten im Umgang mit moderner Computertechnik bei der Messwertauswertung sowie sehr gute englische Sprachkenntnisse und die Fähigkeit zur selbständigen Erarbeitung wissenschaftlicher Publikationen sind weitere Voraussetzungen.

 

Eine Kopplung mit einer Beschäftigung als studentische Hilfskraft bis zu 8 Wochenstunden a 11,24 € ist möglich.

 

Fachliche Auskünfte:
Stefan Kayser
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3126

 

Schwerbehinderte werden bei gleicher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.

 

Ihre Bewerbungsunterlagen senden Sie bitte bis zum 03.07.2017 an:

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

Please submit your application with reference to the job number K12/16 including the usual documents by January 10, 2017, to: 

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung, 
Max-Born-Straße 2, 
D-12489 Berlin, Germany

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

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07/17 Job Opening: (Studentische Hilfskraft &) Masterarbeit 'Charakterisierung und Modellierung monokristalliner Germaniumkristalle mit der Lateral Photovoltage Scanning (LPS) - Methode'

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren.
Das IKZ wird rechtlich vertreten durch den  Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.

 

Für das Thema:

"Charakterisierung und Modellierung monokristalliner Germaniumkristalle
mit der Lateral Photovoltage Scanning (LPS) - Methode"


vergibt das Leibniz-Institut für Kristallzüchtung ab sofort eine

 

Masterarbeit

 

Die Arbeit umfasst:
die Simulation und Untersuchung der physikalischen Zusammenhänge zwischen dem LPS-Messsignal von Germaniumkristallen im Vergleich zu Siliciumkristallen und Probenparametern wie:
•    Probengeometrie und Probenmaße
•    Spezifischer elektrischer Widerstand.

 

Erforderlich sind:
•    ein abgeschlossenes Bachelorstudium der Physik, mit aktueller Spezialisierung: Festkörperphysik.
•    Grundkenntnisse auf dem Gebiet der Simulation von Messprozessen
•    Grundkenntnisse auf dem Gebiet der Charakterisierung von Halbleiterkristallen.

 

Kreative Mitarbeit in der Arbeitsgruppe, Fähigkeiten im Umgang mit moderner Computertechnik bei der Messwertauswertung sowie sehr gute englische Sprachkenntnisse und die Fähigkeit zur selbständigen Erarbeitung wissenschaftlicher Publikationen sind weitere Voraussetzungen.

 

Eine Kopplung mit einer Beschäftigung als studentische Hilfskraft bis zu 8 Wochenstunden a 11,24 € ist möglich.

 

Fachliche Auskünfte:
Stefan Kayser
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3126

 

Schwerbehinderte werden bei gleicher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.

 

Ihre Bewerbungsunterlagen senden Sie bitte bis zum 24.08.2017 an:

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

Please submit your application with reference to the job number K12/16 including the usual documents by January 10, 2017, to: 

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung, 
Max-Born-Straße 2, 
D-12489 Berlin, Germany

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

zurück zur Startseite

January/18 Job opening (K05/18): Research Scientist (m/f):
'Compound semiconductor research and development (R & D) for micro- / optoelectronic applications'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.

 

We are presently offering a

Research Scientist (m/f) Position


Topic:
Compound semiconductor research and development (R & D) for micro- / optoelectronic applications

 

IKZ is looking for an experienced senior doctoral scientists in the area of compound sem-iconductor research and development (R & D) for micro- / optoelectronic applications. R & D activities will focus on innovative compound semiconductor materials and substrates (e.g. AlN) to close the innovation gap between basic research activities and technology readiness in the area of crystals and substrates. The successful candidate is expected to actively collaborate a) with crystal growth and materials characterization teams to improve quality, size and reproducibility of crystals and b) with the crystal preparation laboratory to develop recipes in order to deliver well-defined substrates to partners in academia and industry for prototyping. A candidate with strong networking activities in academia and industry on national and international level for acquiring third party funds is highly wel-comed; experience in leadership in the area of crystal growth and substrate development in an industry environment is considered an advantage.

 

An University degree (MSc, diploma or comparable degree) in physics, chemistry or a related field of study as well as a successful doctorate study, demonstrated by scientific publications in international journals, is requested.

 

For academic questions please contact: 
Prof. Thomas Schröder
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3001

 

The employment will be limited to two years and paid according to the TVöD labour agreement. Among equally qualified applicants, preference will be given to disabled can-didates. The IKZ is an equal opportunity employer and actively supports reconciliation of work and family life.

 

We await your informative application with reference to the job number K05/18, including the usual documents,
by February 28, 2018.


Please send them to:
Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

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Januar/18 Stellenangebot (K06/18): Doktorandin/Doktorand:
'Wachstum und Optimierung von verspannten ferroelektrischen Kalium-Natrium-Niobat-Schichten''

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren. Das IKZ wird rechtlich vertreten durch den Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.


Wir suchen zum 01.04.2018 in der Arbeitsgruppe „Ferroelektrische Oxidschichten

 

eine/einen
Doktorandin/Doktorand


Zum Thema:
"Wachstum und Optimierung von verspannten ferroelektrischen
Kalium-Natrium-Niobat-Schichten"

 

Die Gruppe „Ferroelektrische Oxidschichten“ des IKZ beschäftigt sich mit der Abscheidung und Charakterisierung von bleifreien ferro- und piezoelektrischen Perowskitschichten. Innerhalb des Projektes „Barium stannate based heterostructures for electronic applications“ sollen verspannte, ferroelektrische Kalium-Natrium-Niobat-Schichten mit der gepulsten Laserdeposition (PLD) und der metallorganischen Gasphasendeposition (MOCVD) abgeschieden werden.

Das übergeordnete Ziel des Projektes besteht in der Erforschung von epitaktischen Heterostrukturen für die Anwendung als ferroelektrischer Feldeffekttransistor (FeFET). Das Teilprojekt beinhaltet die Abscheidung und Optimierung von Kalium-Natrium-Niobat-Schichten auf verschiedenen Oxidsubstraten und -schichten. Dabei soll eine Korrelation zwischen Wachstumsparameter, Gitterverspannung, Interface- und Domänenbildung sowie den ferroelektrischen Eigenschaften wie remanente Polarisation und Curie-Temperatur erarbeitet werden.

Außerdem soll der Einbau von aliovalenten Ionen in die Schichten zur Reduktion des Leckstromes untersucht werden. Neben der Abscheidung sollen von dem Bewerber auch Messungen mit Röntgendiffraktometrie, dem Rasterkraftmikroskop (AFM/CAFM/PFM) und einem ferroelektrischen Tester durchgeführt werden.

Die Arbeiten finden in enger Kooperation mit den anderen Projektgruppen statt.

 

Voraussetzungen sind ein abgeschlossenes Studium in Physik, Chemie, Materialwissenschaften oder verwandten Fachgebieten, gute englische Sprachkenntnisse, wissenschaftliche Selbstständigkeit sowie Bereitschaft zur Teamarbeit. Erfahrungen mit der Abscheidung von Oxidschichten und Kenntnisse auf dem Gebiet der Dünnschichtcharakterisierung sind notwendig.

 

Fachliche Auskünfte:
Dr. Jutta Schwarzkopf
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3053

 

Die Stelle ist für 3 Jahre befristet und wird nach dem öffentlichen Tarifrecht TVöD (75 %) vergütet. Schwerbehinderte werden bei gleicher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber/innen besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.


hre Bewerbungsunterlagen senden Sie bitte bis 23.02.2018 unter Angabe der Kennziffer 06/18 an:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


zurück zur Startseite

March/18 Job opening: studentische Hilfskraft: 'Modellierung von Kristallzüchtungsprozessen für Silizium'

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovol-taik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundle-gende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu indust-riell einsetzbaren Züchtungsverfahren. Das IKZ wird rechtlich vertreten durch den Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz Gemeinschft.


Wir suchen ab sofort
in der Arbeitsgruppe Silizium & Germanium eine

 

studentische Hilfskraft


für das Thema:
„Modellierung von Kristallzüchtungsprozessen für Silizium“

 

Aufgaben:
•    Untersuchungen des Wärme- und Stofftransports in Kristallzüchtungsprozessen
•    Durchführung und Auswertung von numerischen Simulationen
•    Entwicklung von Modellexperimenten zur Validierung der Simulation
•    Vorbereitung, Durchführung und Auswertung von Experimenten


Voraussetzungen:
•    Mindestens 4 abgeschlossene Studien-Semester in Natur- oder Ingenieurswissenschaften
•    Vertiefte Kenntnisse in den Bereichen Wärmetransport und Strömungsmechanik
•    Erfahrung mit Software für numerische Simulation (z.B. Comsol, ANSYS, OpenFOAM)
•    Erfahrung im Aufbau von Versuchsständen für naturwissenschaftliche Experimente
•    Basiswissen in Mess- und Regelungstechnik


Unser Angebot:
•    Zukunftsorientiertes und industrierelevantes Forschungsthema im High-Tech Bereich
•    Arbeit im interdisziplinären Projektteam sowohl im technischen als auch wissenschaftlichen Bereich
•    Bei Interesse: Möglichkeit für eine Bachelor-, Master- oder Praktikumsarbeit

 

Fachliche Auskünfte:
Dr. Kaspars Dadzis
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.: +49 30 6392-2830

 

Die Arbeitszeit beträgt ca. 10 Stunden pro Woche (nach Vereinbarung). Die Stelle ist zunächst auf 6 Monate befristet und wird mit 11,24 € pro Stunde vergütet. Schwerbehinderte werden bei glei-cher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber besteht Chancen-gleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.

 

Ihre Bewerbungsunterlagen senden Sie bitte bis zum 27.04.2018 an:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


zurück zur Startseite

April/18 Job opening: Ph.D. Student Position:
'physics on SiGe heterepitaxy materials science for future Silicon nanoelectronics'

Based on a collaboration between industry (Siltronic) and academia (IKZ & IHP), a Ph.D. position is opened for a young talented researcher in the area of advanced heteroepitaxy and state-of-the-art materials characterization for future Silicon nanoelectronics.

 

Science:
Due to their higher carrier mobility, SiGe or Ge based transistors are promising candidates for next-generation devices. Such transistors can be realized by SiGe heteroepitaxy on silicon substrates. A basic manufacturing process is available. However, one major obstacle for the introduction of the material class is the current defect level in the order of 1E5/cm2. These defects are threading dislocations (TDs) generated as a result of the lattice mismatch between a silicon substrate and SiGe epitaxial layer. The defect level is not only dependent on the deposition process but also on the Silicon substrate properties. It is the target of the thesis to gain understanding in the nucleation dynamics of the TDs and to reduce the TD density to a level suitable for sufficient device reliability.

 

International networking:
The thesis is planned to be incorporated into a funded pan-European 3-year project on next-generation lithography and device technology providing contract and collaboration with further international semiconductor partners and organizations.

 

Supervision & Organization:
The Ph.D. student will be enrolled at the Institute of Physics at the Humboldt University Berlin; the Ph.D. student will be hired by Siltronic and will mainly work at the company in Burghausen; research stays at IKZ Berlin and IHP Frankfurt (Oder) are carried out during the research work.

 

Your tasks:

  • Running epitaxial SiGe deposition tests with defined Germanium compositions
  • Analysis of the main impact parameter for the threading dislocation defect generation
  • Refinement and improvement of characterization methods on strain, composition and defect levels in cooperation with Siltronic metrology and supporting institutes

 

Your profile:

  • Master degree in physics or materials science
  • Experimental skills, most suitable first experience in epitaxial deposition
  • theoretical background on semiconductor materials and epitaxial processes
  • Strong motivation to look into defect formation and developing models on nucleation dynamics
  • Commitment to the project´s success and willingness to collaborate with an innovative R & D team.

 

Further information:

  • about supervision: Prof. Thomas Schroeder (Leibniz-Institut für Kristallzüchtung)
    This email address is being protected from spambots. You need JavaScript enabled to view it.
  • about project work: Dr. Georg (Siltronic AG)
    This email address is being protected from spambots. You need JavaScript enabled to view it.

 

We await your informative application  by May 15th, 2018
Please use the following link:
https://karriere.siltronic.com/jobposting/b4182d648811149e24621b7f1e7c969b19d8f627
for your application.

 

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Postdoctoral Position - Research Group: Ferroelectric Oxide Layers

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin and a member of the Leibniz Association. You may find more details at www.ikz-berlin.de.

 

Commencing as soon as possible there is a job opening in the field of Ferroelectric Oxides for a 

Postdoctoral Researcher

 

The group Ferroelectric Oxide Layers at IKZ deals with epitaxially strained, lead-free oxide films, which exhibit different functional properties like ferro- and piezoelectricity or resistive switching. Within the project “Physics and Control of Defects in Oxide Films for Adaptive Electronics“ niobium oxide and strontium titanate thin films shall be deposited by pulsed laser deposition (PLD) as well as metal-organic chemical vapor deposition (MOCVD). Aims of the project are amongst others the realization of single-crystalline thin films and controlling of incorporated defects by the choice of deposition parameters. Thus, a fundamental understanding of the growth process as well as the correlated resistive switching properties and defects shall be gained. Besides the film deposition, the applicant shall perform measurements with x-ray diffractometry and atomic force microscopy (AFM/CAFM). The work is embedded in a close cooperation with the groups Electron Microscopy and Physical Characterization.

Applicants should hold a PhD in physics, chemistry, materials science or a related discipline, good English language skills, the capability of working scientifically on an independent basis as well as the ability to carry out structured scientific work within a highly motivated team of researchers and technicians. Expertise in the field of growth of oxide films and knowledge regarding thin film characterization are necessary. 

 

The position is limited to three years. Payment is according to TVöD (Treaty for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants, preference will be given to disabled candidates.


For information about the project contact:

Dr. Jutta Schwarzkopf

Phone +49 30 6392 3053

This email address is being protected from spambots. You need JavaScript enabled to view it. 

 

Application:

Please submit your application (K 09/16) by December 5, 2016, to: 

Mrs. Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002 
Leibniz Insitute for Crystal Growth 
Max-Born-Straße 2 
12489 Berlin, Germany

PhD position: "Physics and control of defects in oxide films for adaptive electronics"

The Leibniz Institute for Crystal Growth (IKZ) performs basic and applied research in the fields of growth, characterization and processing of crystalline matter. It is part of Forschungsverbund Berlin e. V. and a member of the Leibniz Association. The IKZ is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and powerelectonics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development.

 

IKZ invites applicants for a PhD Position

 within the framework of the project

“Physics and control of defects in oxide films for adaptive electronics”

 

(three-year grant of the Leibniz Competition). Anticipated start of work is March 1, 2017.

In information and communication technology, memristors are currently a hot topic. They allow storing information at higher speeds and densities with lower energy consumption and smaller dimensions compared to silicon technology. Their electrical properties are closely linked to the atomic microstructure of the host material, but a detailed understanding of the storage mechanism is still not well established. The project aims at exploring the role defects in single crystalline oxides play in charge transport and storage under the influence of switching electric fields. Within the project epitaxial thin films of SrTiO3 and Nb2O5 will be grown by pulsed laser deposition and metal-organic chemical vapor deposition and characterized with respect to their atomic microstructure by transmission electron microscopy. We are looking for a candidate working in the third work package “Electrical properties”. It comprises the electrical characterization of the oxide films, the spectroscopic identification of electrically active point defects relevant for resistive switching, and the proof of resistive switching behavior using simple Schottky barrier structures. As experimental methods, Hall effect and capacitance-voltage measurements, deep level transient, Fourier-transform infrared, Raman and electron paramagnetic resonance spectroscopies will be used.

We are looking for a candidate with excellent knowledge of basic physics, in particular solid-state physics, with experimental background and expertise in electrical and optical characterization techniques. Applicants must hold a Diploma or an MSc degree in physics, crystallography, materials science or a related discipline. Furthermore, we expect good English language skills, scientific self-dependence, cooperativeness, and ability to work in a team.


For technical information please contact:

Dr. Klaus Irmscher
phone:  +49 30 6392 3047
email:   This email address is being protected from spambots. You need JavaScript enabled to view it.

 

The employment will be limited to three years, with the salary paid according to the TVöD labor agreement. Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equivalent opportunity employer and actively supports reconciliation of work and family life.


Please submit your application with reference to the job number K14/16 including the usual documents
by January 31, 2017, to:

 

Birgit Ruthenberg
email: This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

Please submit your application with reference to the job number K12/16 including the usual documents by January 10, 2017, to: 

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung, 
Max-Born-Straße 2, 
D-12489 Berlin, Germany

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

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November/17 Job opening: Technische/n Mitarbeiter/in -
Arbeitsgruppe Ferroelektrische Oxidschichten

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren.
Das IKZ wird rechtlich vertreten durch den Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.

 

Wir suchen ab sofort in der Arbeitsgruppe Ferroelektrische Oxidschichten eine/einen

 

Technische/n Mitarbeiter/in

 

Die Arbeitsaufgabe ist eingebettet in die Entwicklung und Optimierung von bleifreien ferroelektrischen Oxidschichten. Sie umfasst die Vorbereitung und Durchführung von Schichtabscheidungen mittels chemischer Gasphasendeposition, die Charakterisierung der Schichtenoberflächen mit Hilfe der Rasterkraftmikroskopie, die Präparation von Substratoberflächen sowie die Wartung der Züchtungsanlagen.

Voraussetzungen sind eine abgeschlossene Berufsausbildung als physikalisch technische/r Assistent/in, Verfahrenstechniker/in, Mikrotechnologe/in oder in verwandten Gebieten. Kenntnisse auf dem Gebiet der Schichtabscheidung bzw. Anlagen- und Vakuumtechnik sind wünschenswert. Eine ausgeprägte Bereitschaft zur Teamarbeit und Englischkenntnisse werden erwartet.

 

Fachliche Auskünfte:
Frau Dr. Jutta Schwarzkopf
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3053

 

Die Stelle ist vorerst auf 2 Jahre befristet und wird nach dem öffentlichen Tarifrecht TVöD vergütet. Schwerbehinderte werden bei gleicher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber/innen besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.

 

Ihre Bewerbungsunterlagen senden Sie bitte bis 27.11.2017 unter Angabe der Kennziffer 15/17 an:

Frau Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

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November/17 Job opening (K18/17): Ph.D. Student Position:
'Generation and evolution of structural defects during AlN bulk crystal growth, substrate preparation, and AlGaN/AlN epitaxy'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.


now available


Ph.D. Student Position


Topic:
"Generation and evolution of structural defects during AlN bulk crystal growth,
substrate preparation, and AlGaN/AlN epitaxy"

 

As the white LED became a popular light source, research currently focuses on the preparation of UV LEDs for disinfection applications. Such devices are made of AlGaN and AlN epitaxial layers, which can be deposited on aluminum nitride (AlN) single crystal substrates. In order to prepare epitaxial layers of highest structural perfection, the density of structural defects (dislocations) on the substrate surface should be as low as possible.

At the IKZ AlN single crystals are prepared from the gas phase (PVT method) and subsequently cut and polished into substrates; the neighboring research institute FBH provides epitaxy on these substrates.

Besides the participation in the growth of AlN bulk crystals, the task consists in exploring the structural properties of the crystals, substrates, and epitaxial layers. The defect structure is investigated by defect-selective wet chemical etching as well as by optical, X-ray, and electron microscopy analysis. The work is targeted on determination and characterization of the origins of defect formation, assessment of defect evolution along the process chain, and providing conception and evaluation of novel approaches in order to reduce the defect density during AlN crystal growth, substrate preparation, and epitaxy.

Applicants must hold a Diploma or an MSc degree in physics, materials science, chemistry or a related discipline. Furthermore, we expect good English language skills, scientific self-dependence, cooperativeness, and ability to work in a team.

 

 

For technical information contact:
Dr. Jürgen Wollweber
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-2843


The employment will be limited to three years and paid according to the TVöD labour agreement (75%). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equal opportunity employer and actively supports reconciliation of work and family life.


We await your informative application with reference to the job number K18/17, including the usual documents, by January 22, 2018. Please send them to:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


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January/18 Job opening (K03/18): Research Scientist (m/f):
'Research and education in the area of crystalline inorganic materials for micro-/optoelectronics applications'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.

 

We are presently offering a

Research Scientist (m/f) Position


Topic:
Research and education in the area of crystalline inorganic materials for micro-/op-toelectronics applications

 

The Leibniz Institute for Crystal Growth in Berlin Adlershof is seeking a talented scientist to establish in collaboration with the Physics Department at HU Berlin a Nanolithography Centre to explore and evaluate novel functional crystalline materials with respect to po-tential micro-/ optoelectronics applications. The successful candidate is an highly inde-pendently working personality with an excellent knowledge of materials processing to-wards device test structures, including detailed experience on materials characterization, surface science and solid state physics of crystalline materials. Proven capability to ac-quire third party funds from public sources (e.g. DFG, AvH etc.) and / or private sector (e.g. industry, foundations etc.) is of central importance. Furthermore, the candidate is active on lectures about the fundamentals of growth and properties of crystalline materials as well as their applications in modern societies; networking within Berlin-Brandenburg research and education area by collaborations with partners is particularly welcomed. 

 

For academic questions please contact: 
Prof. Thomas Schröder
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3001

 

The employment will be limited to two years and paid according to the TVöD labour agreement. Among equally qualified applicants, preference will be given to disabled can-didates. The IKZ is an equal opportunity employer and actively supports reconciliation of work and family life.

 

We await your informative application with reference to the job number K03/18, including the usual documents, by February 28, 2018.


Please send them to:
Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

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January/18 Job opening (K04/18): Ph.D. Student Position:
'MOCVD of perovskite oxide films'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.


Commencing as soon as possible there is an opening for a


Ph.D. Student Position


Topic:
"MOCVD of perovskite oxide films"

 

The group "Ferroelectric oxide layers" of the IKZ deals with epitaxial growth of complex oxide films, thereby SrTiO3 as a prototype of perovskite oxide is of particular interest. Despite many experimental and theoretical efforts, the fundamental understanding of growth process and related defects, oxygen vacancies and interface phenomena in SrTiO3 is still limited yet. Therefore, within the Leibniz ScienceCampus GraFox, SrTiO3 thin films shall be basically investigated in dependence of growth parameters and choice of the substrate (lattice strain). Epitaxial deposition will be focused on metal-organic chemical vapor deposition (MOCVD), which provides stoichiometric films with low defect density. Additionally, pulsed laser deposition will be used, thus a large range of deposition parameters is available. This offers systematic studies on point defects, electronic transport mechanisms, and interface formation.
Characterization of the thin films shall be performed by x-ray diffraction and electron microscopy as well as atomic force microscopy equipped with a conductive (CAFM) module.

 

Applicants should hold a Diploma or a MSc degree in physics, chemistry, materials science or a related discipline as well as good English language skills. Expertise in the field of oxides/perovskites, thin film growth or knowledge regarding thin film characterization is highly desirable. Capability of working scientifically on an independent basis and ability to carry out structured scientific work within a highly motivated team of researchers and technicians are further requirements.

 

The position is part of the Leibniz ScienceCampus “Growth and fundamentals of oxides for electronic applications (GraFox)”, which seizes to fuse the excellent individual activities and competences in Berlin on one of the most prospective material systems for future electronic and (renewable) energy applications. Through collaborative research and publications we aim to establish an internationally renowned key region in Berlin. The ScienceCampi of the Leibniz Association promote cooperation on an equal footing between Leibniz institutions and universities in the form of thematically-focused, complementary regional partnerships. These networks aim to strengthen the scientific environment for the relevant themes by conducting strategic research and encouraging interdisciplinarity in their topics, projects and methods.

 

The position is limited to three years. Payment is according to TVöD (Treaty for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants preference will be given to disabled candidates.

 

 

 

For information about the project contact:
Dr. Jutta Schwarzkopf
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3053


The position is limited to three years. Payment is according to TVöD (Treaty for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants preference will be given to disabled candidates.


We await your informative application with reference to the job number K04/18, including the usual documents, by February 12th, 2018. Please send them to:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


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March/18 Job opening (K08/18): Ph.D. Student Position:
'Transmission electron microscopy studies on Barium stanate based heterostructures for electronic applications'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and powerelectronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz Association. You may find more details at www.ikz-berlin.de.


Commencing May, 1st  there is an opening for a

Ph.D. Student (f/m)


for the topic:
"Transmission electron microscopy studies on Barium stanate based
heterostructures for electronic applications"

 

IKZ has excellent expertise and facilities for the characterization of low-dimensional semiconductors, among them an aberration-corrected TEM/STEM equipped with in-situ holders for in-situ measurements of the structure under electrical bias. A computer cluster for performing STEM and molecular dynamics simulations is available. Recently we are extending our activities into the field of heterostructures between semiconductors and ferroelectric layers for nonvolatile memory applications. Such heterostructures are promising candidates to overcome the speed gap between logical and memory devices in data communication and processing.


The objective of the thesis is to study the relation between physical and structural properties of such heterostructures study by means of atomic scale (scanning) transmission electron microscopy. This comprises the structural properties of the epitaxial grown ferroelectric layers, the structure and physics of the various interfaces as weel as in-situ studies of the ferroelectric layers under bias. The Ph.D. work is part of a joint project that is performed in close collaboration with groups at the Paul-Drude Institut and Leibniz-Institut für Kristallzüchtung, preforming growth of the structures, Humboldt-University, Berlin providing ab-initio calculations and the Technical University performing scanning tunneling microscopy.


The Ph.D. project is performed in the framework of the Leibniz Science Campus GraFox - Growth and fundamentals of oxides for electronic applications, which seizes to fuse the excellent individual activities and competencies in Berlin on one of the most prospective material systems for future electronic and (renewable) energy applications. Through collaborative research and publications, we aim to establish an internationally renowned key region in Berlin. Details can be found on http://grafox.pdi-berlin.de.


Applicants should hold a Diploma or an MSc degree in physics, crystallography, materials science or a related discipline with a strong experimental background. Excellent knowledge of basic physics and of solid state physics are necessary. Expertise in high-resolution transmission electron microscopy and image simulation are highly desirable. We are looking for a team player with a high level of communication skills and the assertiveness to work in a highly motivated team of researchers and technicians.

For information about the project contact:
Dr. Martin Albrecht
This email address is being protected from spambots. You need JavaScript enabled to view it.
Phone +49 30 6392 3094

The employment will be limited to three years and paid according to the TVöD labour agreement (75 %). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equal opportunity employer and actively supports reconciliation of work and family life.

We await your informative application with reference to the job number K08/18,
including the usual documents, by May 15th, 2018.
Please send them to:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


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PhD position - Research Group: Ferroelectric Oxide Layers

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin and a member of the Leibniz Association. You may find more details at www.ikz-berlin.de.

 

Commencing as soon as possible there is an opening for a PhD position 
for the topic: MOCVD of Perovskite Oxide Films


The group Ferroelectric Oxide Layers of the IKZ deals with epitaxially grown complex oxide films. SrTiO3 as a prototype of perovskite oxide is of particular interest. Despite many experimental and theoretical efforts, the fundamental understanding of growth process and related defects, oxygen vacancies, and interface phenomena is still limited yet. Therefore, within the Leibniz ScienceCampus GraFox, SrTiO3 thin films shall be basically investigated in dependence of growth parameters and choice of the substrate (lattice strain). Systematic studies on point defects, electronic transport mechanisms, the role of hydrogen and interface formation shall be performed. The method of choice for the epitaxial deposition is focused mainly on the metal organic chemical vapor deposition (MOCVD), which provides stoichiometric films with low defect density. Additionally, pulsed laser deposition will be used, where a large range of deposition parameters is available. Characterization of the thin films shall be performed by x-ray diffraction and electron microscopy as well as atomic force microscopy equipped with a conductive (CAFM) module.


Applicants should hold a Diploma or a MSc degree in physics, chemistry, materials science or a related discipline as well as good English language skills. Expertise in the field of oxides/perovskites, thin film growth or knowledge regarding thin film characterization is highly desirable. The capability of working scientifically on an independent basis and ability to carry out structured scientific work within a highly motivated team of researchers and technicians are further requirements.


The position is part of the Leibniz ScienceCampus 'Growth and fundamentals of oxides for electronic applications (GraFox)', which seizes to fuse the excellent individual activities and competencies in Berlin on one of the most prospective material systems for future electronic and (renewable) energy applications. Through collaborative research and publications, we aim to establish an internationally renowned key region in Berlin. The ScienceCampi of the Leibniz Association promotes cooperation on an equal footing between Leibniz institutions and universities in the form of thematically-focused, complementary regional partnerships. These networks aim to strengthen the scientific environment for the relevant themes by conducting strategic research and encouraging interdisciplinarity in their topics, projects and methods.


The position is limited to three years. Payment is according to TVöD (Treaty for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants preference will be given to disabled candidates.


For information about the project contact: Dr. Jutta Schwarzkopf, This email address is being protected from spambots. You need JavaScript enabled to view it., Phone +49 30 6392 3053.

Please submit your application by October 31, 2016, to: 

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung, 
Max-Born-Straße 2, 
D-12489 Berlin, Germany

October/17 Job opening: PhD Position: 'Development of a crucible-free growth process for monocrystalline silicon'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.

 

We are presently offering a

PhD Position


Topic:
"Development of a crucible-free growth process for monocrystalline silicon"

 

 

The PhD work is a part of the research project: “Silizium Granulat Eigentiegelverfahren (SiGrEt)”, and funded by the Leibniz association. The goal of the project is the development of a novel crystal growth method for silicon, with crystal properties suitable for the solar- and semiconductor industry.

 

Job description

  • Experimental development of an inductively heated zone melting process
  • Evaluate different concepts for process improvement, with regard to physical, technical and economic feasibility
  • Analysis of grown material for defects and impurities
  • Presentation of results at international conferences and in scientific journals

 

Qualifications:

  • Applicants must have a master degree in physics or engineering in a related field with relevant experience. Prior knowledge in the field of growth- and characterization of semiconductor crystals is
  • Prior knowledge in the field of growth- and characterization of semiconductor crystals is beneficial but not mandatory
  • Good English language skills written and oral
  • Good experimental skills and interest in applied sciences

 

 

For academic questions please contact:
Dr. Robert Menzel
robert.menzel@ikz-berlin
+49 30 6392-3071

 

The employment will be limited to three years and paid according to the TVöD labour agreement (75%). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equal opportunity employer and actively supports reconciliation of work and family life.

 

We await your informative application with reference to the job number K13/17, including the usual documents, by November 20, 2017.

 

Please send them to:
Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

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November/17 Job opening: (Studentische Hilfskraft) & Masterarbeit
'Thermochemische Untersuchungen im Phasensystem KF–TbF3'

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren.
Das IKZ wird rechtlich vertreten durch den  Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.

 

Für das Thema:

"Thermochemische Untersuchungen im Phasensystem KF–TbF3"


vergibt das Leibniz-Institut für Kristallzüchtung in der Arbeitsgruppe „Chemische und Thermodynamische Analyse
ab dem 1. Januar 2018 eine


Masterarbeit

 

Am IKZ werden u.a. Oxide und Fluoride als Einkristalle für optische Anwendungen hergestellt. Eine aktuelle Aufgabe ist die Herstellung von Volumenkristallen aus Kalium-Terbium-Fluorid (KTb3F10). Grundvoraussetzung für eine erfolgreiche Züchtung von Einkristallen in optischer Qualität und ausreichender Größe ist die genaue Kenntnis des Phasendiagramms des entsprechenden Systems in der Umgebung der zu wachsenden Verbindung. Im Falle vom KTb3F10 sind die wenigen existierenden Berichte widersprüchlich.

Ziel der Masterarbeit ist eine sorgfältige Bestimmung des Phasendiagramms des Systems KF–TbF3 im Bereich der Zielverbindung bis hin zu den Nachbarphasen, ggfs. auch unter Berücksichtigung von Tb4+-haltigen Phasen und sauerstoffhaltigen Restverunreinigungen. Dazu steht ein exzellent ausgestattetes thermochemisches Labor mit Messinstrumenten zur Differential-Thermoanalyse (DTA), Kalorimetrie (DSC) und Thermogravimetrie (TG) zur Verfügung. Parallel wird die Modellierung des Phasensystems mit der Software FactSage durchgeführt. Die Ergebnisse werden mit Untersuchungen zum Phasenbestand der Proben und mit chemischen Analysen korreliert. Für eine fachliche Einarbeitung wird gesorgt.

Eine Kopplung mit einer Beschäftigung als studentische Hilfskraft am Institut ist möglich.

 

Fachliche Auskünfte:
Herr PD Dr. Detlef Klimm
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3018

 

Schwerbehinderte werden bei gleicher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.

 

Ihre Bewerbungsunterlagen senden Sie bitte an:

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

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November/17 Job opening (K17/17): Ph.D. Student Position:
'Investigation of ferroelectric domains in strained thin films by means of modern x-ray diffraction techniques'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.


now available


Ph.D. Student Position


Topic:
"Investigation of ferroelectric domains in strained thin films
by means of modern x-ray dif-fraction techniques"

 

At the Leibniz Institute for Crystal Growth ferroelectric oxide layers are epitaxially deposited. These shall be structurally investigated by means of modern x-ray diffraction techniques (including the use of highly brilliant synchrotron radiation). In ferroelectric thin films complex, periodic domain patterns are frequently observed with corresponding structure sizes in the nanometer regime. The main fo-cus of the present work are phase transitions which shall be tracked in-situ as a function of temper-ature. For a detailed interpretation of the experimental intensity distributions structural models have to be developed along with numerical simulations of the diffraction pattern.


Qualifications:

  • Applicants must hold a master degree either in physics, chemistry, materials science or related fields with relevant experienceSkills in at least two of the fields: materials science, x-ray diffraction, epitaxy, piezo-/ferroelectricity, and synchrotron radiation
  • Skills in at least two of the fields: materials science, x-ray diffraction, epitaxy, piezo-/ferroelectricity, and synchrotron radiationYou enjoy working in a motivated team
  • You enjoy working in a motivated teamGood English language skills
  • Good English language skills written and oral

 

For academic questions contact:
Dr. Martin Schmidbauer
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3079


The employment will be limited to three years and paid according to the TVöD labour agreement (75%). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equal opportunity employer and actively supports reconciliation of work and family life.


We await your informative application with reference to the job number K17/17, including the usual documents, by January 2th, 2018. Please e-mail to:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


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January/18 Job opening (K02/18): Post-doctoral researcher (m/f):
'Electron microscopic characterization of scintillating β-Ga2O3 crystals'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.

 

Commencing, March 2018 there is a job opening in the
electron microscopy at the IKZ


Post-doctoral researcher (m/f)


Topic:
"Electron microscopic characterization of scintillating β-Ga2O3 crystals"

 

Job description:
Leibniz-Institut für Kristallzüchtung has excellent expertise and facilities for the characterization of semiconductor materials. Among them is an aberration corrected TEM, an SEM equipped with a cathodoluminescence system and a computer cluster for performing TEM/STEM image - and molecular dynamical simulations. In the frame of a joint Polish-German project between Leibniz-Institut für Kristallzüchtung and Nikolaus-Kopernikus-University Torun, financed by DFG and NCN, scintillating single crystalline β-Ga2O3 activated with cerium will be grown and characterized. Nowadays, inorganic crystalline scintillators dominate in the field of high-energy radiation detectors, including nuclear medicine (Positron Emission Tomography), high energy physics, astrophysics. β-Ga2O3 is a wide bandgap semiconductor (4.85 eV) that combines transparency in the whole visible and deep UV spectral range with semiconducting properties. This may boost new concepts for scintillator devices having a higher level of integration. The main goal of the present study includes fundamental study of structural, electrical, optical, scintillating and thermoluminescent properties of semiconducting β-Ga2O3 activated with cerium, as the basis for future device development, utilizing this class of materials. Main tools will be high resolution transmission electron microscopy and cathodoluminescence.


Qualifications:
Applicants should hold a Diploma or an MSc degree in physics, crystallography, materials science or a related discipline with a strong experimental background. Excellent knowledge of basic physics and of solid state physics are necessary.
Expertise in aberration corrected high resolution transmission microscopy, scanning transmission electron microscopy, cathodoluminescence and image simulation as well as in β-Ga2O3 characterization are necessary for immediate start of the project. We are looking for a scientist with a high level of communication skills and the assertiveness to work in a highly motivated team of researchers and technicians.

 

 

For information about the project contact:
Dr. Zbigniew Galazka
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+49 30 6392-3020

 

The position is available from March 2018 and its duration is limited to 3 years. Payment is according to TVöD (collective labour agreement for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants, preference will be given to disabled candidates.

 

We await your informative application with reference to the job number 02/18, including the usual documents, by January 31th, 2018.

 

Please send them to:
Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

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PhD position - Research Group: Electron Microscopy

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin and a member of the Leibniz Association. You may find more details at www.ikz-berlin.de.

Commencing as soon as possible there is an opening for a PhD position

for the topic: Transmission Electron Microscopy Studies on Phase Formation in Group III- Sesquioxides

IKZ has excellent expertise and facilities for the characterization of low-dimensional semiconductors, among them an aberration corrected TEM/STEM and a computer cluster for performing STEM and molecular dynamics simulations. Recently we are extending our activities in the field of Group III-Sesquioxides.  Group III sesquioxides oxides are distinguished by the fact that they can be efficiently n-doped despite a wide band gap that ranges from 2.7 eV for In2O3 over 4.8 eV for Ga2O3 to 8.9 eV for Al2O3. Possible fields of applications include unipolar devices like field effect devices, switching memories, and UV photodetectors. Full exploitation of these properties requires band gap engineering of these binary compounds through a formation of solid solutions of these oxides.

The main objective of the thesis to contribute by transmission electron microscopy investigations to a fundamental understanding of phase formation in this materials system. This comprises methodological developments to characterize parameters like coordination numbers and bond distortions as well as experimental studies on phase diagrams. The project on phase formation is performed in close collaboration with groups at Paul-Drude Institut and IKZ, who are preforming growth and the Fritz-Haber-Institut providing ab-initio calculations.

The PhD project is performed in the framework of the Leibniz Science Campus GraFox - Growth and fundamentals of oxides for electronic applications, which seizes to fuse the excellent individual activities and competencies in Berlin on one of the most prospective material systems for future electronic and (renewable) energy applications. Through collaborative research and publications, we aim to establish an internationally renowned key region in Berlin. Details can be found on http://grafox.pdi-berlin.de.

Applicants should hold a Diploma or an MSc degree in physics, crystallography, materials science or a related discipline with a strong experimental background. Excellent knowledge of basic physics and of solid state physics are necessary. Expertise in high-resolution transmission electron microscopy and image simulation are highly desirable. We are looking for a team player with a high level of communication skills and the assertiveness to work in a highly motivated team of researchers and technicians.

The position is available by September 2016 and its duration is limited to three years. Payment is according to TVöD (Treaty for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants preference will be given to disabled candidates.

Please submit your application by August 1st, 2016, to: 
 
Dr. Martin Albrecht:
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3094 
Leibniz-Institut für Kristallzüchtung, 
Max-Born-Straße 2, 
D-12489 Berlin, Germany

August/17 Job opening: Post-doctoral researcher (m/f): Preparation and characterization of
semiconducting, epitaxial oxide films'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.


Commencing, November 2017 there is a job opening
in the field of Layers and Nanostructures, Semiconducting oxide layers


Post-doctoral researcher (m/f)


Topic:
"Preparation and characterization of semiconducting, epitaxial oxide films"

 

Job description:
The work is part of a project on Transparent Semiconducting Oxides (TSO) as a basic material for a new generation of electronic devices with application in power electronics and short wavelength photonics devices. The experimental activity will focused on the development of semiconducting oxide thin film by using metalorganic vapor phase epitaxy (MO-VPE) and the characterization of structural and electrical properties. The work tasks are embedded in a close collaboration with academic partners.
The aim of the project is to gain a fundamental understanding of the correlation between on the one-side substrate properties and deposition conditions for MO-VPE and on the other side structural, optical and electronic properties of homo- and heteroepitaxial layers. The obtained results will be used for the realization of novel microelectronic demonstrator devices.


Qualifications:

  • Ph.D. in physics, preferred in solid state physics or physics of semiconductors, material science, chemical or process engineering or a similar disciplineExperience in the field of growth of epitaxial layers, preferable
  • Experience in the field of growth of epitaxial layers, preferable MO-VPE or MBE methods, and practical knowledge egarding structural and electrical thin film characterization.Good knowledge of English language.
  • Good knowledge of English language.
  • Hands-on mentality and goal-oriented, collaborative work style in a team of researchers and technicians.

 

For information about the project contact:
Dr. Günter Wagner
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+49 30 6392-2846


The position is available in November 2017 and its duration is limited to three years. Payment is according to TVöD (collective labour agreement for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants, preference will be given to disabled candidates.


Please sent your informative application with reference to the job number K08/17, including the usual documents,
by October 6th, 2017 to:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


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December/17 Job opening (K14/17): Ph.D. Position:
'Development of Crystal Growth process for high-purity Germanium crystals for radiation detectors'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.

 

We are presently offering a

Ph.D. Position


Topic:
"Development of Crystal Growth process for high-purity Germanium crystals for radiation detectors"

 

 

The position is part of a project for development of high-purity Germanium detectors for the purpose of neutrino-less double beta decay search. The role of IKZ is to optimize the crystal growth process for detector grade high purity germanium.  

 

Job description

  • The successful candidate is expected to work on the development of zone refinement and Czochralski crystal growth process of germanium with the existing apparatus. Analyses germanium crystals for crystal defects and impurities
  • Analyses germanium crystals for crystal defects and impurities
  • Based on the results makes proposal for the optimization of the growth process and 
  • Based on the results makes proposal for the optimization of the growth process and  improvement of the apparatus
  • Studies the growth parameters using simulation tools
  • Presents the results at international conferences and in scientific journals

 

Requirements

  • Applicants must have a master degree in physics or engineering in a related field with relevant experience.
  • Basic knowledge in the field of growth- and characterization of semiconductor crystals
  • Good English language skills written and oral
  • Good experimental skills and interest in applied sciences

 

For academic questions please contact:
Dr. Frank M. Kießling
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3033

 

The employment will be limited to three years and paid according to the TVöD labour agreement (75%). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equal opportunity employer and actively supports reconciliation of work and family life.

 

We await your informative application with reference to the job number K14/17, including the usual documents, by January 22, 2018.

 

Please send them to:
Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

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Dezember/17 Job Opening (K20/17): Fachinformatiker/in für Systemintegration

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren.
Das IKZ wird rechtlich vertreten durch den  Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.

 

Zur Verstärkung des IT-Teams suchen wir ab sofort eine/n

Fachinformatiker/in für Systemintegration

 

 

Das Arbeitsgebiet der IT-Gruppe umfasst alle Aspekte des Betriebs einer modernen IT-Infrastruktur auf der Basis von MS Active Directory Services, MS Exchange 2013 und VMware vSphere von der Beschaffung und Bereitstellung von Internet-, Netzwerk- und Serverdiensten bis hin zur Hard- und Software für Büro- und Anlagenrechner und den Betrieb von Compute Server für Modellierungsaufgaben.


Ihre Aufgaben:

  • Hardware- und Software-Support (1st level Support)
  • Betreuung und Beratung unserer Mitarbeiter/innen hinsichtlich aller IT-Fragen
  • Implementation und Konfiguration von IT-Systemen
  • Unterstützen und Betreiben der IT-Infrastruktur / LAN


Fachliche Kenntnisse:

  • Kenntnisse im Netzwerkbereich (z.B. HP Procurve, Palo Alto Networks, Infoblox, Macmon)
  • Erfahrung im Bereich der Clientsysteme MS Windows 10 und MS Windows 7
  • Linux-Kenntnisse (RHEL / CentOS)
  • Von Vorteil sind außerdem Erfahrungen im Umgang mit NAS-Systemen (NetApp) in der Server-Virtualisierung mit VMware vSphere, mit Microsoft Server-Produkten (MS Windows 2012R2, MS SQL-Server, MS Exchange 2013), mit MS AD und/oder erste Erfahrungen im Systemmonitoring auf der Basis von Nagios.


Einstellungsvoraussetzungen:

  • abgeschlossene Berufsausbildung als Fachinformatiker/-in, staatlich geprüfte/-r Techniker/-in oder entsprechende, langjährige Berufserfahrung
  • Analytische Fähigkeiten bei der Erfassung komplexer Zusammenhänge
  • Bereitschaft, sich selbständig und aktiv in neue Soft- und Hardwareumgebungen einzuarbeiten
  • Bereitschaft zur nutzerorientierten Lösung von Problemstellungen sowie zur Kommunikation der dazu notwendigen Schritte an Mitarbeiterinnen/Mitarbeiter.

Eine ausgeprägte Bereitschaft zur Teamarbeit wird vorausgesetzt.

 

 

Fachliche Auskünfte:
Herr Rehse
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3070

 

Diese Stelle wird nach dem öffentlichen Tarifrecht (TVöD) vergütet. Die Besetzung erfolgt zunächst für 2 Jahre mit einer Probezeit von 6 Monaten und der Option der anschließenden Umwandlung in ein unbefristetes Arbeitsverhältnis. Schwerbehinderte werden bei gleicher Eignung bevorzugt be-rücksichtigt. Für weibliche und männliche Bewerber besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.

Ihre vollständigen und aussagefähigen Bewerbungsunterlagen senden Sie bitte bis zum 22.01.2018 unter Angabe der Kennziffer 20/17 an:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

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December/17 Job opening (K01/18): Post-doctoral researcher (m/f):
'Growth and characterization of oxide laser materials'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.

 

Commencing, May 2018 there is a job opening in the
Center for Laser-Materials (ZLM) at the IKZ


Post-doctoral researcher (m/f)


Topic:
"Growth and characterization of oxide laser materials"

 

 

Job description:
The main tasks are the growth of rare-earth doped oxide laser materials by the Czochralski- and the optical floating zone method as well as the optical characterization of these crystalline materials.
This characterization includes spectroscopic analyses as well as the investigations on the laser characteristics of the grown materials. The labs of the Center for Laser Materials are currently set up, therefore we also expect participation in setting up new and improving existing growth and characterization facilities. Furthermore, the candidate will be involved in project acquisition.
The aim of the research performed in this position is the development of new and the optimization of the structural and optical quality of known laser materials for applications in novel laser systems in industry and research.


Qualifications:

  • Studies of physics, photonics, chemistry or a related topic and a PhD in this field
  • Experience in the field of crystal growth, optical spectroscopy and laser characterization
  • Good knowledge of English language, basic knowledge of German language
  • Practical experience in hard- and software (Labview) required for electronic data acquisition
  • Hands-on mentality and goal-oriented, collaborative work style in a team of researchers and technicians.

 

 

For information about the project contact:
Dr. Christian Kränkel
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3019

 

The position is available from Mai 2017 and its duration is initially limited to two years. Payment is according to TVöD (collective labour agreement for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants, preference will be given to disabled candidates.

 

We await your informative application with reference to the job number 01/18, including the usual documents, by March 1th, 2018

 

Please send them to:
Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

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PhD position - Research Group: Ferroelectric Oxide Layers

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin and a member of the Leibniz Association. You may find more details at www.ikz-berlin.de.

Commencing as soon as possible there is an opening for a PhD position 
for the topic: MOCVD of Perovskite Oxide Films


The group Ferroelectric Oxide Layers of the IKZ deals with epitaxially grown complex oxide films. SrTiO3 as a prototype of perovskite oxide is of particular interest. Despite many experimental and theoretical efforts, the fundamental understanding of growth process and related defects, oxygen vacancies, and interface phenomena is still limited yet. In the framework of this PhD study, SrTiO3 thin films shall be basically investigated in dependence of growth parameters and choice of the substrate (lattice strain). Systematic studies on point defects, electronic transport mechanisms, the role of hydrogen and interface formation will be performed. The method of choice for the epitaxial deposition is focused mainly on the metal organic chemical vapor deposition (MOCVD), which provides stoichiometric films with low defect density. Additionally, pulsed laser deposition will be used, whereby a large range of deposition conditions is available. Characterization of the thin films will be performed by x-ray diffraction and electron microscopy as well as atomic force microscopy equipped with a conductive (CAFM) module. 

Applicants should hold a Diploma or a MSc degree in physics, chemistry, materials science or a related discipline as well as good English language skills. Expertise in the field of oxides, thin film growth or knowledge regarding thin film characterization is highly desirable. The capability of working scientifically on an independent basis and ability to carry out structured scientific work within a highly motivated team of researchers and technicians are further requirements. 

The position is part of the Leibniz ScienceCampus 'Growth and Fundamentals of Oxides for Electronic Applications' (GraFox), which seizes to fuse the excellent individual activities and competencies in Berlin on one of the most prospective material systems for future electronic and (renewable) energy applications. Through collaborative research and publications, we aim to establish an internationally renowned key region in Berlin. The ScienceCampi of the Leibniz Association promote cooperation on an equal footing between Leibniz institutions and universities in the form of thematically-focused, complementary regional partnerships. These networks aim to strengthen the scientific environment for the relevant themes by conducting strategic research and encouraging interdisciplinarity in their topics, projects and methods. 

The position is available by September 2016 and its duration is limited to three years. Payment is according to TVöD (Treaty for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants preference will be given to disabled candidates.

Please submit your application by August 12st, 2016 , to: 

Dr. Jutta Schwarzkopf:
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3053 
Leibniz-Institut für Kristallzüchtung, 
Max-Born-Straße 2, 
D-12489 Berlin, Germany

September/17 Job opening: PhD Position  (part-time): 'Growth and laser characterization of
Er3+-doped sesquioxide crystals'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.


available from January 1, 2018


PhD Position
(part-time)


Topic:
"Growth and laser characterization of Er3+-doped sesquioxide crystals"

 

Cubic rare-earth sesquioxides such as Lu2O3, Y2O3, and Sc2O3 are excellent host materials for lasers in the near and mid infrared spectral range. In particular when doped with Er3+ operated at the 3 µm transition, these materials allowed for higher efficiencies and output power than any oth-er laser material. However, due to their high melting points the growth by crucible-based tech-niques is difficult and expensive.


In this thesis, sesquioxide crystals shall be grown by the crucible-free optical floating zone tech-nique (OFZ). The growth experiments will be carried out using a new growth facility acquired for this purpose. Moreover, the grown materials will be spectroscopically characterized with respect to their application as laser crystals in the new labs of the Center for Laser Materials at the IKZ. The most promising samples will be utilized for laser experiments in the wavelength range around 3 µm.


Qualifications:
As a minimum qualification, we expect a master degree in physics, optical sciences, laser engi-neering or related studies. Practical experiences in the fields of crystal growth or laser engineering are desirable. The ability to work in a team and very good English skills are required, basic knowledge in German language is desirable.

 

For scientific questions contact:
Dr. Christian Kränkel
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3019


The employment will be limited and paid according to the TVöD labor agreement. Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equivalent op-portunity employer and actively supports reconciliation of work and family life.


We await your informative application with reference to the job number K10/17, including the usual documents,
by Novenber 1, 2017. Please send them to:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


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November/17 Job Opening (K19/17): Studentische Hilfskraft - IT-Team

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren.
Das IKZ wird rechtlich vertreten durch den  Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.

 

Zur Verstärkung des IT-Teams suchen wir ab sofort eine

 

Studentische Hilfskraft (m/w)

 

Das Arbeitsgebiet der IT-Gruppe umfasst alle Aspekte des Betriebs einer modernen IT-Infrastruktur auf der Basis von MS Active Directory Services, MS Exchange 2013 und VMware vSphere von der Beschaffung und Bereitstellung von Internet-, Netzwerk- und Serverdiensten bis hin zur Hard- und Software für Büro- und Anlagenrechner und den Betrieb von Compute Server für Modellierungsaufgaben.
Zu den aktuellen Projekten in der IT gehört die Erweiterung des Nagios-basierten Monitoringsystems Centreon mit dem Ziel, die Ergebnisse der technischen Systemüberwachung auch anderen Fachgruppen im Institut zugänglich zu machen.

Aufgaben:

Aus diesem Projekt leiten sich die Arbeitsaufgaben ab:

  • Update des bestehenden Monitoringsystems
  • Integration verschiedenster neuer SNMP-fähiger Systeme in die Überwachung
  • Wartung des zugrundeliegenden Linux-Servers sowie anderer im Institut eingesetzte Linux-Systeme

Darüber hinaus wird die Bereitschaft zur Unterstützung des Teams beim Endnutzersupport vorausgesetzt.

Voraussetzungen: 

Die Bearbeitung der geplanten Aufgaben erfordern:

  • Erfahrungen im Systemmonitoring mit Nagios oder einem vergleichbaren Tool
  • sichere Linux-Kenntnisse (RHES / CentOS)
  • sicheren Umgang mit Windows 7 und Windows 10
  • anwendungsbereite PC-Hardwarekenntnisse.

 

Fachliche Auskünfte:
Herr Uwe Rehse
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3070

 

Schwerbehinderte werden bei gleicher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.

 

Ihre vollständigen und aussagefähigen Bewerbungsunterlagen (pdf-Format) senden Sie bitte bis zum 22.01.2018 unter Angabe der Kennziffer 19/17 an:

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

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Dezember/17 Job opening (K13/17): Ph.D. Position:
"Development of a crucible-free growth process for monocrystalline silicon"

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.

 

We are presently offering a

Ph.D. Position


Topic:
"Development of a crucible-free growth process for monocrystalline silicon"

 

 

The Ph.D. work is a part of the research project: “Silizium Granulat Eigentiegelverfahren (SiGrEt)”, and funded by the Leibniz Association. The goal of the project is the development of a novel crystal growth method for silicon, with crystal properties suitable for the solar- and semiconductor industry.

 

Job description

  • Experimental development of an inductively heated zone melting process
  • Evaluate different concepts for process improvement, with regard to physical, technical and economic feasibility
  • Analysis of grown material for defects and impurities
  • Presentation of results at international conferences and in scientific journals

 

Qualifications:

  • Applicants must have a master degree in physics or engineering in a related field with relevant experience. Prior knowledge in the field of growth- and characterization of semiconductor crystals is
  • Prior knowledge in the field of growth- and characterization of semiconductor crystals is beneficial but not mandatory
  • Good English language skills written and oral
  • Good experimental skills and interest in applied sciences

 

For academic questions please contact:
Dr. Robert Menzel
robert.menzel@ikz-berlin
+49 30 6392-3071

 

The employment will be limited to three years and paid according to the TVöD labour agreement (75%). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equal opportunity employer and actively supports reconciliation of work and family life.

 

We await your informative application with reference to the job number K13/17, including the usual documents, by January 22, 2018.

 

Please send them to:
Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

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PhD position - Research Group: Ferroelectric Oxide Layer

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin and a member of the Leibniz Association. You may find more details at www.ikz-berlin.de.

Commencing as soon as possible there is an opening for a PhD position 
for the topic: MOCVD of Perovskite Oxide Films


The group Ferroelectric Oxide Layers of the IKZ deals with epitaxially grown complex oxide films. SrTiO3 as a prototype of perovskite oxide is of particular interest. Despite many experimental and theoretical efforts, the fundamental understanding of growth process and related defects, oxygen vacancies, and interface phenomena is still limited yet. In the framework of this PhD study, SrTiO3 thin films shall be basically investigated in dependence of growth parameters and choice of the substrate (lattice strain). Systematic studies on point defects, electronic transport mechanisms, the role of hydrogen and interface formation will be performed. The method of choice for the epitaxial deposition is focused mainly on the metal organic chemical vapor deposition (MOCVD), which provides stoichiometric films with low defect density. Additionally, pulsed laser deposition will be used, whereby a large range of deposition conditions is available. Characterization of the thin films will be performed by x-ray diffraction and electron microscopy as well as atomic force microscopy equipped with a conductive (CAFM) module. 

Applicants should hold a Diploma or a MSc degree in physics, chemistry, materials science or a related discipline as well as good English language skills. Expertise in the field of oxides, thin film growth or knowledge regarding thin film characterization is highly desirable. The capability of working scientifically on an independent basis and ability to carry out structured scientific work within a highly motivated team of researchers and technicians are further requirements. 

The position is part of the Leibniz ScienceCampus 'Growth and Fundamentals of Oxides for Electronic Applications' (GraFox), which seizes to fuse the excellent individual activities and competencies in Berlin on one of the most prospective material systems for future electronic and (renewable) energy applications. Through collaborative research and publications, we aim to establish an internationally renowned key region in Berlin. The ScienceCampi of the Leibniz Association promote cooperation on an equal footing between Leibniz institutions and universities in the form of thematically-focused, complementary regional partnerships. These networks aim to strengthen the scientific environment for the relevant themes by conducting strategic research and encouraging interdisciplinarity in their topics, projects and methods. 

The position is available by September 2016 and its duration is limited to three years. Payment is according to TVöD (Treaty for German public service). IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants preference will be given to disabled candidates.

Please submit your application by August 12st, 2016 , to: 

Dr. Jutta Schwarzkopf:
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3053 
Leibniz-Institut für Kristallzüchtung, 
Max-Born-Straße 2, 
D-12489 Berlin, Germany

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PhD position - Research Group: Ferroelectric Oxide Layer

The working group Ferroelectric Oxide Layers is offering a 3 year Ph.D. position in the field of MOCVD of Perovskite Oxide Films. The closing date for applications is October 31, 2016. Please find further information on the position here:

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October//17 Job opening: studentische Hilfskraft: 'Züchtung von Nioboxid-Kristallen'

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren.
Das IKZ wird rechtlich vertreten durch den  Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.

 

Für das Thema:

"Züchtung von Nioboxid-Kristallen"


Suchen wir ab sofort in der Arbeitsgruppe Oxide & Fluoride eine

 

studentische Hilfskraft

 

Innerhalb des Leibniz-Projektes „Physics and control of defects in oxide films for adaptive electronics“ sollen einkristalline Nioboxidschichten homoepitaktisch abgeschieden werden. Für diese Arbeiten sind Nioboxid-Substratkristalle erforderlich, welche mit dem tiegelfreien Zonenschmelzverfahren gezüchtet werden sollen. Zur Aufgabenstellung gehören präparative Arbeiten (Nähr- und Keimbarrenherstellung) sowie die Durchführung der Züchtungsexperimente.

 

Notwendige Voraussetzungen sind ein ausgeprägtes experimentelles Geschick, ein hohes Interesse an Kristallzüchtung und ein materialwissenschaftlich orientiertes Master- oder Bachelor-Studium (Chemie, Physik, Mineralogie, Werkstoffwissenschaften oder verwandte Studiengänge). Die Fähigkeit und Bereitschaft zur Teamarbeit sowie hinreichende Deutsch- und Englischkenntnisse werden erwartet.

 

 

Fachliche Auskünfte:
Dr. Christo Guguschev
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3124

 

Die Arbeitszeit beträgt ca. 10 Stunden pro Woche (nach Vereinbarung). Die Stelle ist zunächst auf 12 Monate befristet und wird mit 11,24 € pro Stunde vergütet.
Schwerbehinderte werden bei gleicher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.

 

Ihre Bewerbungsunterlagen senden Sie bitte bis zum 31.10.2017 an:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

Please submit your application with reference to the job number K12/16 including the usual documents by January 10, 2017, to: 

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung, 
Max-Born-Straße 2, 
D-12489 Berlin, Germany

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

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November/17 Job opening (K16/17): Member of the Technical Staff (m/f) - Working group Oxides & Fluorides

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and powerelec-tronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development.
It is part of Forschungsverbund Berlin and a member of the Leibniz Association.
You may find more details at www.ikz-berlin.de

 

IKZ invites applicants for a

 

Member of the Technical Staff (m/f)

 

The task is to carry out technical / scientific laboratory tests, i.e. growth of oxide and fluo-ride single crystals on modern melt growth facilities, preparation of crystalline samples, preparation of materials and processes, post-processing, documentation and further laboratory work.

A prerequisite for the job is a completed training, for example, as a laboratory assistant or technical assistant in one of the related fields. Experimental skills, self-directed goal-oriented work and the willingness to work in teams are required. A relevant professional experience as well as basic knowledge in the German language are desirable.

 

For scientific questions:
Dr. Steffen Ganschow
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+49 30 6392-3024

 

The position is initially limited to 2 years. The employment will be paid according to the TVöD labor agreement. Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equivalent opportunity employer and actively supports reconciliation of work and family life.

 

We await your informative application with reference to the job number K16/17, including the usual documents, by January 2th, 2018. Please e-mail to Mrs. Ruthenberg:

Frau Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

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October/17 Job opening: PhD Position: 'Development of Crystal Growth process for high-purity Germanium crystals for radiation detectors'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.

 

We are presently offering a

PhD Position


Topic:
"Development of Crystal Growth process for high-purity Germanium crystals for radiation detectors"

 

 

The position is part of a project for development of high-purity Germanium detectors for the purpose of neutrino-less double beta decay search. The role of IKZ is to optimize the crystal growth process for detector grade high purity germanium.  

 

Job description

  • The successful candidate is expected to work on the development of zone refinement and Czochralski crystal growth process of germanium with the existing apparatus. Analyses germanium crystals for crystal defects and impurities
  • Analyses germanium crystals for crystal defects and impurities
  • Based on the results makes proposal for the optimization of the growth process and 
  • Based on the results makes proposal for the optimization of the growth process and  improvement of the apparatus
  • Studies the growth parameters using simulation tools
  • Presents the results at international conferences and in scientific journals

 

Requirements

  • Applicants must have a master degree in physics or engineering in a related field with relevant experience.
  • Basic knowledge in the field of growth- and characterization of semiconductor crystals
  • Good English language skills written and oral
  • Good experimental skills and interest in applied sciences

 

For academic questions please contact:
Dr. Frank M. Kießling
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3033

 

The employment will be limited to three years and paid according to the TVöD labour agreement (75%). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equal opportunity employer and actively supports reconciliation of work and family life.

 

We await your informative application with reference to the job number K14/17, including the usual documents, by November 20, 2017.

 

Please send them to:
Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

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September/17 Job opening: PhD Position  (part-time): 'Generation and evolution of structural defects during AlN bulk crystal growth, substrate preparation, and AlGaN/AlN epitaxy'

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin e.V. and a member of the Leibniz-Association.


available from December 1, 2017


PhD Position
(part-time)


Topic:
"Generation and evolution of structural defects during AlN bulk crystal growth,
substrate preparation, and AlGaN/AlN epitaxy"

 

As the white LED became a popular light source, research currently focuses on the preparation of UV LEDs for disinfection applications. Such devices are made of AlGaN and AlN epitaxial layers, which can be deposited on aluminium nitride (AlN) single crystal substrates. In order to prepare epitaxial layers of highest structural perfection, the density of structural defects (dislocations) on the substrate surface should be as low as possible.

At the IKZ AlN single crystals are prepared from the gas phase (PVT method) and subsequently cut and polished into substrates; the neighbouring research institute FBH provides epitaxy on these substrates.

Besides the participation in the growth of AlN bulk crystals, the task consists in exploring the structural properties of the crystals, substrates, and epitaxial layers. The defect structure is investigated by defect-selective wet chemical etching as well as by optical, X-ray, and electron microscopy analysis. The work is targeted on determination and characterization of the origins of defect formation, assessment of defect evolution along the process chain, and providing conception and evaluation of novel approaches in order to reduce the defect density during AlN crystal growth, substrate preparation, and epitaxy.


Qualifications:
Applicants must hold a Diploma or an MSc degree in physics, materials science, chemistry or a related discipline. Furthermore, we expect good English language skills, scientific self-dependence, cooperativeness, and ability to work in a team.

 

For technical information contact:
Dr. Jürgen Wollweber
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-2843


The employment is limited and  payment is according to TVöD (Treaty for German public service). Among equally qualified applicants, preference will be given to disabled candidates. The IKZ is an equivalent opportunity employer and actively supports reconciliation of work and family life.


We await your informative application with reference to the job number K09/17, including the usual documents,
by October 15, 2017. Please send them to:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


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August/17 Job opening: studentische Hilfskraft: 'Visualisierung und Auswertung von Prozessdaten bei der AlN-Züchtung'

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren.
Das IKZ wird rechtlich vertreten durch den  Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.


Für das Thema:

"Visualisierung und Auswertung von Prozessdaten bei der AlN-Züchtung"


Suchen wir ab sofort in der Arbeitsgruppe Aluminiumnitride eine

studentische Hilfskraft

 

Die Arbeitsgruppe züchtet Aluminiumnitride-Einkristalle durch Sublimati-on/Rekondensation bei zirka 2100°C in einer Stickstoff-Atmosphäre. Während des Pro-zesses fallen eine Vielzahl von charakteristischen Daten an, deren komplexe Zusam-menhänge durch eine flexible Visualisierung ausgewertet dargestellt werden sollen.

Zur Aufgabenstellung gehören die Definition einer Schnittstelle zur Anlagen-SPS, die Erarbeitung eines Programmkonzepts und die Programmierung der Datenvisualisierung auf Basis von MS Visual Basic oder OriginPro (LabTalk, Origin C oder Python).

Voraussetzungen sind ein Studium der Informatik, Industrie-Informatik, Mathematik oder Vergleichbares. Kenntnisse in der SPS-Programmierung sind förderlich.


Fachliche Auskünfte:

Dr. Wollweber
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-2843


Die Arbeitszeit beträgt ca. 10 Stunden pro Wochen (nach Vereinbarung). Die Stelle ist zunächst bis 31.01.2018 befristet und wird mit 11,24 € pro Stunde vergütet. Schwerbehinderte werden bei gleicher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.


Ihre Bewerbungsunterlagen senden Sie bitte an:


Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany


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July/17 Job opening: (Studentische Hilfskraft &) Masterarbeit 'Charakterisierung der Defektverteilung in epitaktisch gewachsenen AlN- und AlGaN-Schichten'

Das Leibniz-Institut für Kristallzüchtung (IKZ) ist eine der führenden Einrichtungen auf dem Gebiet des Wachstums und der Züchtung von kristallinen Festkörpern. Diese spielen u.a. in der Photovoltaik, der Mikro-, Opto- und Leistungselektronik, der Sensorik, Optik und Lasertechnik eine grundlegende Rolle. Die Forschungsthemen reichen dabei von der Grundlagenforschung bis hin zu industriell einsetzbaren Züchtungsverfahren.
Das IKZ wird rechtlich vertreten durch den  Forschungsverbund Berlin e.V. und ist Mitglied der Leibniz-Gemeinschaft.

 

Für das Thema:

"Charakterisierung der Defektverteilung in epitaktisch gewachsenen AlN- und AlGaN-Schichten"


vergibt das Leibniz-Institut für Kristallzüchtung ab sofort eine

 

Masterarbeit.

 

Epitaktisch gewachsene AlN- bzw. AlGaN-Schichten mit hoher kristalliner Perfektion sind die Grundlage für Leuchtdioden (LEDs), die im tiefen ultravioletten Spektralbereich (210-280 nm) Licht emittieren. Die Effizienz dieser UVC-LEDs wird stark durch Kristalldefekte (Versetzungen, Korngrenzen, …) beeinträchtigt, die durch Elektronenmikroskopie sowie durch defekt-selektives Ätzen der AlN/AlGaN-Schichten mit basischen Schmelzlösungen charakterisiert werden können. Die gewonnenen Ergebnisse bilden die Grundlage zur Optimierung der Züchtungsbedingungen mit dem Ziel der Defektreduzierung.

 

Im Rahmen der Masterarbeit sollen:
die Ätzbedingungen (Zeit, Temperatur,…) für verschiedene AlN/AlGaN-Schichten optimiert und das wissenschaftliche Verständnis vertieft werden. Die Auswertungen der einzelnen Ätzversuche soll mittels Rasterkraftmikroskop (AFM) und Rasterelektronenmikroskop (SEM) erfolgen.
Weitere Schwerpunkte der Arbeit können je nach Vorkenntnissen und Interesse angepasst werden. Möglichkeiten sind:

 

  • die Optimierung der Ätzzusammensetzung inklusive Bestimmung von Phasendiagrammen durch die Software FactSage und durch Differenz-Thermoanalyse (DTA)
  • der Vergleich der Defektdichte zwischen defekt-selektiven Ätzen und der Analyse mittels Transmissionselektronenmikroskopie (TEM)
  • die Zuordnung unterschiedlicher Versetzungstypen zu den verschiedenen Ätzpitgeometrien

 

Die hohe fachliche Expertise und die hervorragende Ausstattung des IKZ mit Charakterisierungsanlagen (AFM, SEM, DTA, TEM,…) sind exzellente Vorrausetzungen für die Durchführung wissenschaftlicher Abschlussarbeiten.

 

Erforderlich sind:

  • ein erfolgreich abgeschlossenes Bachelorstudium der Chemie, Materialwissenschaften oder Physik

 

Eine Kopplung mit einer Beschäftigung als studentische Hilfskraft bis zu 8 Wochenstunden a 11,24 € ist möglich.

 

Fachliche Auskünfte:
Dr. Carsten Hartmann
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-2848

 

Schwerbehinderte werden bei gleicher Eignung bevorzugt berücksichtigt. Für weibliche und männliche Bewerber besteht Chancengleichheit. Das Leibniz-Institut für Kristallzüchtung unterstützt aktiv die Vereinbarkeit von Beruf und Familie.

 

Ihre Bewerbungsunterlagen senden Sie bitte an:

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002
Leibniz-Institut für Kristallzüchtung,
Max-Born-Straße 2,
D-12489 Berlin, Germany

 

Please submit your application with reference to the job number K12/16 including the usual documents by January 10, 2017, to: 

Birgit Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung, 
Max-Born-Straße 2, 
D-12489 Berlin, Germany

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

Bewerbungsunterlagen:
Bitte bis zum 02.01.2017 unter Angabe der Kennziffer 10/16 an:

Frau Ruthenberg
This email address is being protected from spambots. You need JavaScript enabled to view it.
Tel.:+49 30 6392-3002 
Leibniz-Institut für Kristallzüchtung 
Max-Born-Straße 2 
12489 Berlin

zurück zur Startseite

Postdoc - Research Group: Silizium & Germanium

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin and a member of the Leibniz Association. You may find more details at www.ikz-berlin.de.

 

 

There is a job opening in the field of Classical Semiconductors, Research Group: Silicon & Germanium for a

 

Postdoctoral Researcher


commencing on July 1, 2016

 

Job description:

You will work in a team of researchers in an industry-oriented modern laboratory environment on the development of a novel process for the growth of high-quality Si crystals for solar cell and semiconductor applications. Our group has long-term experience in the growth of large-diameter Si crystals with ultra-high purity using the Float-Zone method.

Your duties include design and acquisition of laboratory equipment, planning, realization and evaluation of experiments as well as the publication of the results in international journals and on conferences.

 

Qualifications:

  • D. in physics, material science, chemical and process engineering or similar discipline

  • Experience in the field of Si crystal growth, preferable FZ or Cz method

  • Computer skills in numerical modelling of crystal growth processes or measurement and control software are an advantage

  • Strong scientific writing competence in English

  • Hands-on mentality and goal-oriented, collaborative work style

 

The position is available by July 1, 2016, and its duration is limited to three years, with the possibility of extension. IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants, preference will be given to disabled candidates.

 

For further information on the project please contact:

Dr. Robert Menzel, This email address is being protected from spambots. You need JavaScript enabled to view it., +49 30 6392 3071

Please submit your application via email by May 23, 2016, to:

This email address is being protected from spambots. You need JavaScript enabled to view it.

Postdoc - Research Group: Silicon & Germanium

The Leibniz Institute for Crystal Growth (IKZ) is a leading research institution in the area of crystal growth of technologically important materials for micro-, opto- and power electronics, sensors, optics and laser technology. This ranges from explorative fundamental research to pre-industrial development. It is part of Forschungsverbund Berlin and a member of the Leibniz Association. You may find more details at www.ikz-berlin.de.

 

 

There is a job opening in the field of Classical Semiconductors, Research Group: Silicon & Germanium for a

 

Postdoctoral Researcher


commencing on July 1, 2016

 

Job description:

You will work in a team of researchers in an industry-oriented modern laboratory environment on the development of a novel process for the growth of high-quality Si crystals for solar cell and semiconductor applications. Our group has long-term experience in the growth of large-diameter Si crystals with ultra-high purity using the Float-Zone method.

Your duties include design and acquisition of laboratory equipment, planning, realization and evaluation of experiments as well as the publication of the results in international journals and on conferences.

 

Qualifications:

  • D. in physics, material science, chemical and process engineering or similar discipline

  • Experience in the field of Si crystal growth, preferable FZ or Cz method

  • Computer skills in numerical modelling of crystal growth processes or measurement and control software are an advantage

  • Strong scientific writing competence in English

  • Hands-on mentality and goal-oriented, collaborative work style

 

The position is available by July 1, 2016, and its duration is limited to three years, with the possibility of extension. IKZ is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants, preference will be given to disabled candidates.

 

For further information on the project please contact:

Dr. Robert Menzel, This email address is being protected from spambots. You need JavaScript enabled to view it., +49 30 6392 3071

Please submit your application via email by May 23, 2016, to:

This email address is being protected from spambots. You need JavaScript enabled to view it.

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