Publications - Working Group Semiconducting Oxide Layers

2018

Michele Baldini, Zbigniew Galazka, Günter Wagner
Recent progress in the growth of β-Ga2O3 for power electronics applications
Materials Science in Semiconductor Processing 78 (2018) 132–146
https://www.sciencedirect.com/science/article/pii/S1369800117313471

2017

A. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, and K. Irmscher
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
Journal of Applied Physics 122, 165701 (2017)
https://aip.scitation.org/doi/10.1063/1.4993748

Andrew Joseph Green, Kelson D. Chabak, Michele Baldini, Neil Moser, Ryan Gilbert, Robert C. Fitch, Günter Wagner, Zbigniew Galazka, Jonathan McCandless, Antonio Crespo, Kevin Leedy, and Gregg H. Jessen
β-Ga2O3 MOSFETs for Radio Frequency Operation
IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 6
https://ieeexplore.ieee.org/document/7904635/

Michele Baldini, Martin Albrecht, Andreas Fiedler, Klaus Irmscher, Robert Schewski, and G¨unter Wagner
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
ECS Journal of Solid State Science and Technology, 6 (2) Q3040-Q3044 (2017)
http://jss.ecsdl.org/content/6/2/Q3040.abstract

2016

K. D. Chabak,. N. Moser, A. J. Green, D. E. Walker, Jr.,S. E. Tetlak, E. Heller, A. Crespo, R. Fitch, J. P. Mc Candless, K. Leedy, M. Baldini, G. Wagner, Z. Galazka, X. Li, G. Jessen
Enhancement-Mode Ga2O3 Wrap-Gate Fin Field-Effect Transistors on Native (100) β-Ga2O3 Substrate with High Breakdown Voltage
J. Appl. Phys. LETT 109 (2016) 213501
http://aip.scitation.org/doi/full/10.1063/1.4967931

R. Schewski, M. Baldini, K. Irmscher, A. Fiedler, T. Markurt, B. Neuschulz, T. Remmele, T. Schulz, G. Wagner, Z. Galazka, and M. Albrecht
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
Journal of Applied Physics 120, 225308 (2016)
http://dx.doi.org/10.1063/1.4971957

A.J. Green, K.D. Chabak, E.R. Heller, R.C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G. Wagner, Z. Galazka, S.E. Tetlak, A. Crespo, K. Leedy, G. H. Jessen
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs
IEEE ELECTR DEVICE L 37 (2016) 902 - 905
http://ieeexplore.ieee.org/document/7470552/?section=abstract

M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, D. Klimm, R. Schewski, G. Wagner
Semiconducting Sn-Doped β-Ga2O3 Homoepitaxial Layers Grown by Metal Organic Vapour-Phase Epitaxy.
J. Mater. Sci. 51 (2016) 3650 – 3656
http://link.springer.com/article/10.1007/s10853-015-9693-6

M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, G. Wagner
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
ECS J SOLID STAT SCI TECHN 6 (2016) Q1-Q5
http://jss.ecsdl.org/content/6/2/Q3040.full

2015

M. Baldini, M. Albrecht, D. Gogova, R. Schewski
Effect of Indium as a Surfactant in (Ga1-XInx)2O3 Epitaxial Growth on β-Ga2O3 by Metal Organic Vapour Phase Epitaxy.
Semicond. Sci. Technol. 30 (2015) 024013
http://dx.doi.org/10.1088/0268-1242/30/2/024013

E. Korhonen, F. Tuomisto, D. Gogova, G. Wagner, M. Baldini, Z. Galazka, R. Schewski, M. Albrecht
Electrical Compensation by Ga Vacancies in Ga2O3 Thin Films.
J. Appl. Phys. LETT 106 (2015) 242103
http://dx.doi.org/10.1063/1.4922814

R. Schewski, G. Wagner, M. Baldini, D. Gogova , Z. Glazaka, R. Uecker, T. Schulz, T. Remmele, T. Markurt, H. von Wenckstern, M. Grundmann, O. Bierwagen, P. Vogt, M. Albrecht
Epitaxial Stabilization of Pseudomorphic α-Ga2O3 on Sapphire (0001).
J. Appl. Phys. EXPRESS 8 (2015) 011101
http://iopscience.iop.org/article/10.7567/APEX.8.011101/meta

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