Publications - Working Group Physical Characterization

2019

M. MAKOWSKI, W. DROZDOWSKI, M. E. WITKOWSKI, A. J. WOJTOWICZ, K. IRMSCHER, R. SCHEWSKI, Z. GALAZKA
Tailoring the scintillation properties of -Ga2O3 by doping with Ce and codoping with Si
Optical Materials Express, Vol. 9, No. 9
https://doi.org/10.1364/OME.9.003738

L. von Helden, L. Bogula, P.-E. Janolin, M. Hanke, T. Breuer, M. Schmidbauer, S. Ganschow, J. Schwarzkopf
Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric KxNa1−xNbO3 thin films
Appl. Phys. Lett. 114, 232905 (2019)
https://aip.scitation.org/doi/10.1063/1.5094405

S. Kowarik, L. Bogula, S. Boitano, F. Carlà, H. Pithan, P. Schäfer, H. Wilming, A. Zykov, and L. Pithan4
A novel 3D printed radial collimator for x-ray diffraction
Review of Scientific Instruments 90, 035102 (2019)
https://aip.scitation.org/doi/10.1063/1.5063520

A. Fiedler, R. Schewski, Z. Galazka, and K. Irmscher
Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)
ECS Journal of Solid State Science and Technology, 8 (7) Q3083-Q3085 (2019)
http://jss.ecsdl.org/content/8/7/Q3083

A. Fiedler, R. Schewski, Z. Galazka, K. Irmscher
Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)
ECS Journal of Solid State Science and Technology, 8 (7) Q3083-Q3085 (2019)
http://jss.ecsdl.org/content/8/7/Q3007.full

Winicjusz Drozdowski, Michał Makowski, Marcin E. Witkowski, Andrzej J. Wojtowicz, Zbigniew Galazka, Klaus Irmscher, Robert Schewski
β-Ga2O3:Ce as a fast scintillator: An unclear role of cerium
Radiation Measurements 121 (2019) 49–53
https://www.sciencedirect.com/science/article/pii/S1350448718306358?via%3Dihub

W. Drozdowski, M. Makowski, M. E. Witkowski, A. J. Wojtowicz, Z. Galazka, K. Irmscher, R. Schewski
β-Ga2O3:Ce as a fast scintillator: An unclear role of cerium
Radiation Measurements 121 (2019) 49–53

Tamino Hirsch, Detlef Klimm, Christo Guguschev, Albert Kwasniewski, Steffen Ganschow
Investigation of the Nd 2 O 3 –Lu 2 O 3 –Sc 2 O 3 phase diagram for the preparation of perovskite-type mixed crystals NdLu 1-x Sc x O 3
Journal of Crystal Growth 505 (2019) 38–43
https://www.sciencedirect.com/science/article/pii/S0022024818304895?via%3Dihub

R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. Albrecht
Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting
APL Materials 7, 022515 (2019)
https://aip.scitation.org/doi/10.1063/1.5054943

Zbigniew Galazka, Steffen Ganschow, Robert Schewski, Klaus Irmscher, Detlef Klimm Albert Kwasniewski, Mike Pietsch, Andreas Fiedler, Isabelle Schulze-Jonack, Martin Albrecht,Thomas Schröder, and Matthias Bickermann
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
APL Mater. 7, 022512 (2019)
https://aip.scitation.org/doi/10.1063/1.5053867

2018

M Gunes, M O Ukelge, O Donmez, A Erol, C Gumus, H Alghamdi, H V A Galeti, M Henini, M Schmidbauer, J Hilska, J Puustinen and M Guina
Optical properties of GaAs1-xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates
Semicond. Sci. Technol. 33 124015 (2018)
https://iopscience.iop.org/article/10.1088/1361-6641/aaea2e/meta

Andrea Dittmar, Jürgen Wollweber, Martin Schmidbauer, Detlef Klimm, Carsten Hartmann, Matthias Bickermann
Physical vapor transport growth of bulk Al1-xScxN single crystals
Journal of Crystal Growth 500 (2018) 74–79
https://www.sciencedirect.com/science/article/pii/S0022024818303300?via%3Dihub

Giuliano Duva, Linus Pithan, Clemens Zeiser, Berthold Reisz, Johannes Dieterle, Bernd Hofferberth, Paul Beyer, Laura Bogula, Andreas Opitz, Stefan Kowarik, Alexander Hinderhofer, Alexander Gerlach and Frank Schreiber
Thin-Film Texture and Optical Properties of Donor/Acceptor Complexes. Diindenoperylene/F6TCNNQ vs Alpha-Sexithiophene/ F6TCNNQ
J. Phys. Chem. C 2018, 122, 18705−18714
https://pubs.acs.org/doi/abs/10.1021/acs.jpcc.8b03744?journalCode=jpccck

Zbigniew Galazka, Steffen Ganschow, Andreas Fiedler, Rainer Bertram, Detlef Klimm, Klaus Irmscher, Robert Schewski, Mike Pietsch, Martin Albrecht, Matthias Bickermann
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
Journal of Crystal Growth 486 (2018) 82–90
https://doi.org/10.1016/j.jcrysgro.2018.01.022

Dorothee Braun , Martin Schmidbauer, Michael Hanke and Jutta Schwarzkopf
Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films
Nanotechnology 29 (2018) 015701 (8pp)
https://doi.org/10.1088/1361-6528/aa98a4

2017

A. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, and K. Irmscher
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
Journal of Applied Physics 122, 165701 (2017)
https://aip.scitation.org/doi/10.1063/1.4993748

Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. Bickermann
Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
ECS J SOLID STATE SCI TECHN 6 (2017) Q3007 - Q3011
http://jss.ecsdl.org/content/6/2/Q3007.abstract

Yu. I. Mazur, V. G. Dorogan, L. Dias, D. Fan, M. Schmidbauer, M. E. Ware, Z. Ya. Zhuchenko, S. S. Kurlov, G. G. Tarasov, S.–Q. Yu, G. E. Marques, G. J. Salamo
Luminescent properties of GaAsBi /GaAs double quantum well heterostructures
J. Lumin. 188 (2017) 209 - 216
https://www.sciencedirect.com/science/article/pii/S0022231316315836?via%3Dihub

J. Schwarzkopf, D. Braun, M. Hanke, R. Uecker, M. Schmidbauer
Strain Engineering of Ferrolectric Domains in KxNa1-xNbO3 Epitaxial Layers
FRONTIERS IN MATERIALS 4 (2017) Art. 26
http://journal.frontiersin.org/article/10.3389/fmats.2017.00026/full

D. Szalkai, Z. Galazka, K. Irmscher, P. Tüttó, A. Klix, D. Gehre
β-Ga2O3 Solid-State Devices for Fast Neutron Detection
IEEE TRANS NUCL SCI 64 (2017) 1574 - 1579
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7913728

D. Klimm, C. Guguschev, D. J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M. D. Neumann, A. Kwasniewski, D. G. Schlom, M. Bickermann
Crystal growth and characterization of the pyrochlore Tb2Ti2O7
CrystEngComm 19 (2017) 3908 - 3914
http://pubs.rsc.org/en/content/articlelanding/2017/ce/c7ce00942a/unauth#!divAbstract

Christo Guguschev, Dirk J. Kok, Uta Juda, Reinhard Uecker, Sakari Sintonen, Zbigniew Galazka, Matthias Bickermann
Top-seeded solution growth of SrTiO3 single crystals virtually free of mosaicity
Journal of Crystal Growth 468 (2017) 305–310
https://doi.org/10.1016/j.jcrysgro.2016.10.048

D. Braun, M. Schmidbauer, M. Hanke, A. Kwasniewski, J. Schwarzkopf
Tunable ferroelectric domain wall alignment in strained monoclinic KxNa1-xNbO3 epitaxial films
J. Appl. Phys. LETT 110 (2017) 232903
https://aip.scitation.org/doi/abs/10.1063/1.4985191

C. Guguschev, J. Philippen, D. J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram and M. Bickermann
Czochralski growth and characterization of cerium doped calcium scandate
CrystEngComm, 2017, 19, 2553
http://pubs.rsc.org/en/Content/ArticleLanding/2017/CE/C7CE00445A#!divAbstract

M. Schmidbauer, D. Braun, T. Markurt, M. Hanke, J. Schwarzkopf
Strain Engineering of Monoclinic Domains in KxNa1-xNbO3 Epitaxial Layers: A Pathway to Enhanced Piezoelectric Properties
NANOTECHNOLOGY 28 (2017) 24LT02
http://iopscience.iop.org/article/10.1088/1361-6528/aa715a/meta

M. Schmidbauer, M. Hanke, A. Kwasniewski, D. Braun, L. von Helden, C. Feldt, S. J. Leake, J. Schwarzkopf
Scanning X-Ray Nanodiffraction from Ferroelectric Domains in Strained K0.75Na0.25NbO3 Epitaxial Films Grown on (110) TbScO3
J. Appl. Crystallogr. 50 (2017) 519 - 525
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377345/

R. Uecker, R. Bertram, M. Brützam, Z. Galazka, T. M. Gesing, C. Guguschev, D. Klimm, M. Klupsch, A. Kwasniewski, D. G. Schlom
Large-Lattice-Parameter Perovskite Single-Crystal Substrates
J. Cryst. Growth 457 (2017) 137 - 142
https://www.sciencedirect.com/science/article/pii/S0022024816300860?via%3Dihub

Z. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht,S. Ganschow, T. Markurt, C. Guguschev, M. Bickermann
Melt Growth and Properties of Bulk BaSnO3 Single Crystals
J. Phys.-CONDENS MAT 29 (2017) 075701
http://iopscience.iop.org/article/10.1088/1361-648X/aa50e2/meta

Michele Baldini, Martin Albrecht, Andreas Fiedler, Klaus Irmscher, Robert Schewski, and G¨unter Wagner
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
ECS Journal of Solid State Science and Technology, 6 (2) Q3040-Q3044 (2017)
http://jss.ecsdl.org/content/6/2/Q3040.abstract

2016

R. Schewski, M. Baldini, K. Irmscher, A. Fiedler, T. Markurt, B. Neuschulz, T. Remmele, T. Schulz, G. Wagner, Z. Galazka, and M. Albrecht
Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
Journal of Applied Physics 120, 225308 (2016)
http://dx.doi.org/10.1063/1.4971957

S. Ganschow, A. Kwasniewski, D. Klimm
Conditions for the Growth of Fe1-xO Crystals Using the Micro-Pulling-Down Technique.
J. Cryst. Growth 450 (2016) 203-206
https://www.sciencedirect.com/science/article/pii/S0022024816303232?via%3Dihub

S. Sintonen, S. Wahl , S. Richter, S. Meyer, S. Suihkonen, T. Schulz, K. Irmscher, A. N. Danilewsky, T. O. Tuomi, R. Stankiewicz, M. Albrecht
Evolution of Impurity Incorporation During Ammonothermal Growth of GaN
J. Cryst. Growth 456 (2016) 51 - 57
https://www.sciencedirect.com/science/article/pii/S0022024816304572?via%3Dihub

J. A. Steele, R. A. Lewis, J. Horvat, M. J. B. Nancarrow, M. Henini, D. Fan, Y. I. Mazur, M. Schmidbauer, M. E. Ware, S.-Q. Yu, G. J. Salamo
Surface Effects of Vapour-Liquid-Solid Driven Bi Surface Droplets Fromed During Molecular-Beam-Epitaxy of GaAsBi.
SCI REPORTS 6 (2016) 28860
https://www.nature.com/articles/srep28860

B. Cai, J. Schwarzkopf, E. Hollmann, D. Braun, M. Schmidbauer, T. Grellmann,R. Wördenweber
Characterization of Polar Nanoregions in Relaxor-Type Ferroelectric NaNbO3 Films.
Phys. Rev. B 93 (2016) 224107
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.224107

B. Cai, J. Schwarzkopf, E. Hollmann, D. Braun, M. Schmidbauer, T. Grellmann,R. Wördenweber
Electronic Characterization of Polar Nanoregions in Relaxor-Type Ferroelectric NaNbO3 Films.
Phys. Rev. B 93 (2016) 224107
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.224107

A.J. Green, K.D. Chabak, E.R. Heller, R.C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G. Wagner, Z. Galazka, S.E. Tetlak, A. Crespo, K. Leedy, G. H. Jessen
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs
IEEE ELECTR DEVICE L 37 (2016) 902 - 905
http://ieeexplore.ieee.org/document/7470552/?section=abstract

D.J. Kok, C. Guguschev, T. Markurt, M. Niu, R. Bertram, M. Albrecht, K. Irmscher
Origin of Brown Coloration in Top-Seeded Solution Grown SrTiO3 Crystals.
CrystEngComm 18 (2016) 4580 - 4586
http://pubs.rsc.org/en/content/articlelanding/2016/ce/c6ce00247a

C. Hartmann, J. Wollweber, S. Sintonen, A. Dittmar, L. Kirste, S. Kollowa, K. Irmscher, M. Bickermann
Preparation of Deep UV Transparent AlN Substrates with High Structural Perfection for Optoelectronic Devices.
CrystEngComm 18 (2016) 3488 - 3497
http://pubs.rsc.org/en/content/articlelanding/2016/ce/c6ce00622a#!divAbstract

M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, D. Klimm, R. Schewski, G. Wagner
Semiconducting Sn-Doped β-Ga2O3 Homoepitaxial Layers Grown by Metal Organic Vapour-Phase Epitaxy.
J. Mater. Sci. 51 (2016) 3650 – 3656
http://link.springer.com/article/10.1007/s10853-015-9693-6

S. Höfer, R. Uecker, A. Kwasniewski, J. Popp, Th. G. Mayerhöfer
Complete Dispersion Analysis of Single Crystal Yttrium Orthosilicate.
VIB SPECTROSC 83 (2016) 151 – 158
https://www.sciencedirect.com/science/article/pii/S0924203116300042?via%3Dihub

R.A. Kornev, P.G. Sennikov, D.A. Konychev, A.M. Potapov, D.Yu. Chuvilin, P.A. Yunin, S. A. Gusev, M. Naumann
Hydrogen Reduction of 98MoF6 in RF Discharge
J Radioanal Nucl Chem 309 (2016) 833-840
http://link.springer.com/article/10.1007/s10967-015-4687-z

J. Schwarzkopf, D. Braun, M. Hanke, A. Kwasniewski, J. Sellmann, M. Schmidbauer
Monoclinic MA Domains in Anisotropically Strained Ferroelectric K0.75Na0.25NbO3 Films on (110) TbScO3 Grown by MOCVD.
J. Appl. Crystallogr. 49 (2016) 375 - 384
http://dx.doi.org/10.1107/S1600576716000182

M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, G. Wagner
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
ECS J SOLID STAT SCI TECHN 6 (2016) Q1-Q5
http://jss.ecsdl.org/content/6/2/Q3040.full

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