Publications - Working Group Silicon & Germanium

2019

V. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, and H.-W. Hübers
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission
Semiconductors, 2019, Vol. 53, No. 9, pp. 1234–1237
https://doi.org/10.1134/S1063782619090197

N. Yarykin, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. Weber
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals
Semiconductors, 2019, Vol. 53, No. 6, pp. 789–794
10.1134/S1063782619060290

S. G. Pavlov, N. V. Abrosimov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Y. A. Astrov, R. Kh. Zhukavin, V. N. Shastin, K. Irmscher, A. Pohl, H.-W. Hübers
Even-Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in Silicon
Phys. Status Solidi B 2019, 256, 1800514
DOI: 10.1002/pssb.201800514

Lyudmila Khirunenko, Mikhail Sosnin, Andrei Duvanskii, Nikolay Abrosimov, Helge Riemann
Features of the Formation of the BiBs Defect in Si
Phys. Status Solidi A 2019, 216, 1900291
https://doi.org/10.1002/pssa.201900291

M. Beck, N. V. Abrosimov, J. Hübner, M. Oestreich
Impact of optically induced carriers on the spin relaxation of localized electron spins in isotopically enriched silicon
PHYSICAL REVIEW B 99, 245201 (2019)
10.1103/PhysRevB.99.245201

R. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. Thewalt
Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in silicon
PHYSICAL REVIEW B 99, 195207 (2019)
10.1103/PhysRevB.99.195207

Adam DeAbreu, Camille Bowness, Rohan J.S. Abraham, Alzbeta Medvedova,1 Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L.W. Thewalt, Stephanie Simmons
Characterization of the Si:Se+ Spin-Photon Interface
PHYSICAL REVIEW APPLIED
https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.11.044036

P.G. Sennikov, R.A. Kornev, N. V. Abrosimov, A.D. Bulanov, V.A. Gavva, A. M. Potapov
Feasibility study of the production of bulk stable Ge isotopes by the hydrogen plasma chemical reduction of fluorides
Materials Science and Engineering: B Volume 244, May 2019, Pages 1-5
https://doi.org/10.1016/j.mseb.2019.04.019

V. B. Shuman, A. N. Lodygin, L. M. Portsel, A. A. Yakovleva, N. V. Abrosimov, Yu. A. Astrov
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon
Semiconductors, 2019, Vol. 53, pp. 296–297
https://link.springer.com/article/10.1134%2FS1063782619030175

M. Wienold, S. G. Pavlov, N. V. Abrosimov, and H.-W. Hübers
High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source
Appl. Phys. Lett. 114, 092103 (2019)
https://www.researchgate.net/publication/331626218_High-resolution_background-free_spectroscopy_of_shallow-impurity_transitions_in_semiconductors_with_a_terahertz_photomixer_source

2018

V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, and G. A. Oganesyan
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge
SEMICONDUCTORS Vol. 52 No. 13 2018
https://www.researchgate.net/publication/329891224_Interaction_Rates_of_Group-III_and_Group-V_Impurities_with_Intrinsic_Point_Defects_in_Irradiated_Si_and_Ge

C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt
Highly enriched 28Si reveals remarkable optical linewidt
PHYSICAL REVIEW B 98, 195201 (2018)
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.98.195201

R. J. S. Abraham, A. DeAbreu, K. J. Morse, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, and M. L. W. Thewalt
Mg-pair isoelectronic bound exciton identified by its isotopic fingerprint in 28 Si
PHYSICAL REVIEW B 98, 205203 (2018)
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.98.205203

S. G. Pavlov, N. Deßmann, B. Redlich, A. F. G. van der Meer, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, and H.-W. Hübers
Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon
PHYSICAL REVIEW X 8, 041003 (2018)
https://journals.aps.org/prx/abstract/10.1103/PhysRevX.8.041003

H.-J. Rost, R. Menzel, D. Siche, U. Juda, S. Kayser, F.M. Kießling, L. Sylla, T. Richter
Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method
Journal of Crystal Growth 500 (2018) 5–10
https://www.sciencedirect.com/science/article/pii/S002202481830352X?via%3Dihub

C. Ehlers, S. Kayser, D. Uebel, R. Bansen, T. Markurt, Th. Teubner, K. Hinrichs, O. Ernst, T. Boeck
In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth
CrystEngComm 20 (2018) 7170 - 7177
https://pubs.rsc.org/en/content/articlelanding/2018/ce/c8ce01170b#!divAbstract

Juerong Li, Nguyen H. Le, K. L. Litvinenko, S. K. Clowes, H. Engelkamp, S. G. Pavlov, H.-W. Hübers, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, C. R. Pidgeon, A. Fisher, Zaiping Zeng, Y.-M. Niquet, and B. N. Murdin
Radii of Rydberg states of isolated silicon donors
PHYSICAL REVIEW B 98, 085423 (2018)
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.98.085423

R. J. S. Abraham, A. DeAbreu, K. J. Morse, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons and M. L. W. Thewalt
Further investigations of the deep double donor magnesium in silicon
Phys. Rev. B 98, 045202
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.98.045202

K. Saeedi, N. Stavrias, B. Redlich, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, B. N. Murdin
Short lifetime components in the relaxation of boron acceptors in silicon
Phys. Rev. B 97, 125205
https://doi.org/10.1103/PhysRevB.97.125205

K. J. Morse, P. Dluhy, J. Huber, J. Z. Salvail, K. Saeedi, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, M. L. W. Thewalt
Zero-feld optical magnetic resonance study of phosphorus donors in 28-silicon
Phys. Rev. B 97, 115205
https://doi.org/10.1103/PhysRevB.97.115205

A. V. Inyushkin, A. N. Taldenkov, J. W. Ager, E. E. Haller, H.Riemann, N. V. Abrosimov, H.-J. Pohl, P. Becker
Ultrahigh thermal conductivity of isotopically enriched silicon
Journal of Applied Physics 123, 095112 (2018)
https://doi.org/10.1063/1.5017778

L. I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann
Divacancy-tin related defects in irradiated germanium
Journal of Applied Physics 123, 161595 (2018)
https://doi.org/10.1063/1.5010422

2017

N. V. Abrosimov, D. G. Aref’ev, P. Becker, H. Bettin, A. D. Bulanov, M. F. Churbanov, S. V. Filimonov, V. A. Gavva, O. N. Godisov, A. V. Gusev, T. V. Kotereva, D. Nietzold, M. Peters, A. M. Potapov, H.-J. Pohl, A. Pramann, H. Riemann, P.-T. Scheel, R. Stosch, S. Wundrack, S. Zakel
A new generation of 99.999% enriched 28Si single crystals for the determination of Avogadro’s constant
METROLOGIA 54 (2017) 599 – 609&
http://iopscience.iop.org/article/10.1088/1681-7575/aa7a62

B. C. Rose, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, S. A. Lyon
Coherent Rabi Dynamics of a Superradiant Spin Ensemble in a Microwave Cavity
Phys. Rev. X 7 (2017) 031002
https://journals.aps.org/prx/abstract/10.1103/PhysRevX.7.031002

R. Menzel, K. Dadzis, N.V. Abrosimov, H. Riemann
Crystal diameter stabilization during growth of Si from agranulate crucible
in: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 215 - 220
https://www.researchgate.net/publication/317578515_Crystal_diameter_stabilization_during_growth_of_Si_from_a_granulate_crucible

N. Arutyunov, V. Emtsev, M. Elsayed, R. Krause-Rehberg, N. Abrosimov, G. Oganesyan, V. Kozlovski
Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons
Phys. Status Solidi C 14 (2017) 1700120
https://doi.org/10.1002/pssc.201700120

R. Stübner, V. Kolkovsky, J. Weber, N. V. Abrosimov
Carbon-hydrogen related defects in SiGe observed after dc H plasma treatment
Phys. Status Solidi A 214 (2017) 1700329
https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.201700329

T. Mchedlidze, J. Weber, N. V. Abrosimov, H. Riemann
Deep carrier traps in as grown isotopically pure 28Si FZ crystal
Phys. Status Solidi A 214 (2017) 1700238&
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201700238

Y. A. Astrov, V. B. Shuman, L. М. Portsel, А. N. Lodygin, S. G. Pavlov, N. V. Abrosimov, V. N. Shastin, H.-W. Hübers
Diffusion doping of silicon with magnesium
Phys. Status Solidi A 214 (2017) 1700192
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201700192

L. I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann
Electronic absorption of interstitial boron-related defects in silicon
Phys. Status Solidi A 214 (2017) 1700245
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201700245

M. F. Churbanov, V. A. Gavva, A. D. Bulanov, N. V. Abrosimov, E. A. Kozyrev, I. A. Andryushchenko, V. A. Lipskii, S. A. Adamchik, O. Yu. Troshin, A. Yu. Lashkov, A. V. Gusev
Production of germanium stable isotopes single crystals
Cryst. Res. Technol. 52 (2017) 1700026
https://doi.org/10.1002/crat.201700026

K. Lauer, Ch. Möller, Ch. Teßmann, D. Schulze, N. V. Abrosimov
Activation energies of the InSi-Si, defect transitions obtained by carrier lifetime measurements
Phys. Status Solidi C 14 (2017) 1600033
https://doi.org/10.1002/pssc.201600033

N. Deßmann, S. G. Pavlov, V. V. Tsyplenkov, E. E. Orlova, A. Pohl, V. N. Shastin, R. Kh. Zhukavin, S. Winner, M. Mittendorff, J. M. Klopf, N. V. Abrosimov, H. Schneider, H.-W. Hübers
Dynamics of non-equilibrium charge carriers in p-germanium doped by gallium
Phys. Status Solidi B 254 (2017) 1600803
https://doi.org/10.1002/pssb.201600803

2016

D. Borisova, N. V. Abrosimov, K. Shcherbachev, V. Klemm, G. Schreiber, D. Heger, U. Juda, V. Bublik, H. Oettel
Evolution of Real Structure in Ge-Si Mosaic Crystals &
Cryst. Res. Technol. 51 (2016) 742 – 751
http://onlinelibrary.wiley.com/doi/10.1002/crat.201600248/abstract

A. V. Andrianov, A. O. Zakhar’in, R. Kh. Zhukavin, V. N. Shastin, D. V. Shengurov, N. V. Abrosimov
Terahertz Emission at Impurity Electrical Breakdown in Si(Li)
TECH PHYS LETT 42 (2016) 1031 - 1033
http://link.springer.com/article/10.1134/S1063785016100163

D. P. Franke, M. Szech, F. M. Hrubesch, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, M. L.W. Thewalt, M. S. Brandt
Electron Nuclear Double Resonance with Donor-Bound Excitons in Silicon
Phys. Rev. B 94 (2016) 235201
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.235201

N. Arutyunov, N. Bennett, N. Wight, R. Krause-Rehberg, V. Emtsev, N. Abrosimov, V. Kozlovski
Positron Probing of Disordered Regions in Neutron-Irradiated Silicon
Phys. Status Solidi B 253 (2016) 2175 - 2179
http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600644/abstract

V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan, and D. S. Poloskin
Some Challenging Points in the Identification of Defects in Floating-Zone n-Type Silicon Irradiated with 8 and 15 MeV Protons
SEMICONDUCT 50 (2016) 1291 – 1298 &
https://link.springer.com/article/10.1134/S1063782616100122

S. G. Pavlov, N. Deßmann, A. Pohl, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov,S. Winnerl, H. Schneider, N. Stavrias, A. F. G. van der Meer, V. V. Tsyplenkov, K. A. Kovalevsky, R. Kh. Zhukavin, V. N. Shastin, N. V. Abrosimov, H.-W. Hübers
Dynamics of Nonequilibrium Electrons on Neutral Center States of Interstitial Magnesium Donorsin Silicon.
Phys. Rev. B, 94 (2016) 075208-1
ttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.075208

Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, N. V. Abrosimov, A. S. Kamyshan, A. V. Giro, K. A. Solyanikova
Formation of Donors in Germanium–Silicon Alloys Implanted with Hydrogen Ions with Different Energies
SEMICONDUCT 50 (2016) 1122 – 1124
http://link.springer.com/article/10.1134/S1063782616080182

A.P. Detochenko, S.A. Denisov, M.N. Drozdov, A.I. Mashin, V.A. Gavva, A.D. Bulanov, A.V. Nezhdanov, A.A. Ezhevskii, M.V. Stepikhova, V.Yu. Chalkov, V.N. Trushin, D.V. Shengurov, V.G. Shengurov, N.V. Abrosimov, H. Riemann
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties.
SEMICONDUCT 50 (2016) 345 - 348
http://link.springer.com/article/10.1134/S1063782616030064

K.J. Morse, R.J.S. Abraham, D.P. Franke, N.V. Abrosimov, M.L.W. Thewalt
Even-Parity Excited States of the Acceptor Boron in Silicon Revisited.
Phys. Rev. B 93 (2016) 125207
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.125207

K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin
Polarization of the Induced THz Emission of Donors in Silicon
SEMICONDUCT 50 (2016) 1673 - 1677
http://link.springer.com/article/10.1134/S1063782616120101

L. Khirunenko, M. Sosnin, A. Duvanskii, N. Abrosimov, H. Riemann
Boron-Related Defects in Low Temperature Irradiated Silicon.
SOLID STATE PHENOM 242 (2016) 285-289
https://www.scientific.net/SSP.242.285

R. Stübner, Vl. Kolkovsky, J. Weber, N. Abrosimov
Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy.
SOLID STATE PHENOM 242 (2016) 184 - 189
http://www.scientific.net/SSP.242.184

L. I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann
Defects Involving Interstitial Boron in Low-Temperature Irradiated Silicon
Phys. Rev. B 94 (2016) 235210
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.235210

V.V. Emtsev, N.V. Abrosimov, V.V. Kozlovskii, G.A. Oganesyan
Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons.
SOLID STATE PHENOM 242 (2016) 316-321
https://www.scientific.net/SSP.242.316

A.A. Ezhevskii, A.P. Detochenko, S.A. Popkov, A.A. Konakov, A.V. Soukhorukov, D.V. Guseinov, D.G. Zverev, G.V. Mamin, N.V. Abrosimov, H. Riemann
Spin Relaxation Times of Donor Centers Associated with Lithium in Monoisotopic 28 Si
SOLID STATE PHENOM 242 (2016) 322 - 326 &
https://www.scientific.net/SSP.242.322

A. V. Soukhorukov, D.V. Guseinov, A.V. Kudrin, S. A. Popkov, A. P. Detochenko, A. V. Koroleva, A. A. Ezhevskii, A. A. Konakov, N. V. Abrosimov, H. Riemann &
The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon.
SOLID STATE PHENOM 242 (2016) 327 - 331
http://www.scientific.net/SSP.242.327

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