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Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growthO.C. Ernst, F. Lange, Th. Teubner, T. BoeckBeilstein J. Nantechnol. 09-2020
Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystalsK.-P. Gradwohl, A.N. Danilewsky, M. Roder, M Schmidbauer, J. Janicsko-Csathy, A. Gybin, N. Abrosimov, R.R. SumathiJ. Appl. Cryst. 08-2020
Suitability of binary oxides for molecularbeam epitaxy source materials: A comprehensive thermodynamic analysisKate M. Adkison, Shun-Li Shang, Brandon J. Bocklund, Detlef Klimm, Darrel C. Schlom, and Zi-Kui LiuAPL Mater. 08-2020
In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substratesFelix Lange, Owen Ernst, Thomas Teubner, Carsten Richter, Martin Schmidbauer, Ociler Skibitzki, Thomas Schroeder, Peer Schmidt, and Torsten BoeckNano Futures 08-2020
Ferroelectric phase transitions in multi-domain K0.9Na0.1NbO3 epitaxial thin filmsLaura Bogula, Leonard von Helden, Carsten Richter, Michael Hanke, Jutta Schwarzkopf and Martin SchmidbauerNano Futures 08-2020
Transition-metal-doped saturable absorbers for passive Q-switching of visible lasersHiroki Tanaka, Christian Kränkel, and Fumihiko KannariOptical Materials Express 08-2020
Influence of impurities from SiC and TiC crucible cover on directionally solidified siliconNatasha Dropka, Iryna Buchovska, Ulrich Degenhardt, Frank M.KiesslingJournal of Crystal Growth 07-2020
Thermoelastic anisotropy in NdScO3 and NdGaO3 perovskitesC. Hirschle, J. Schreuer, S. Ganschow, L. PetersMaterials Chemistry and Physics 254 (2020) 123528 07-2020
Kinetic Monte Carlo model for homoepitaxial growth of Ga2O3Wolfram Miller, Dennis Meiling, Robert Schewski, Andreas Popp, Saud Bin Anooz, and Martin AlbrechtPhysical Review Research 07-2020
Output characteristics of Pr:YAlO3 and Pr:YAG lasers pumped by high-power GaN laser diodesShogo Fujita, Hiroki Tanaka, AND Fumihiko KannariApplied Optics 06-2020
The Electronic Conductivity of Single Crystalline Ga-Stabilized Cubic Li7La3Zr2O12: A Technologically Relevant Parameter for All-Solid-State BatteriesMartin Philipp, Bernhard Gadermaier, Patrick Posch, Ilie Hanzu, Steffen Ganschow, Martin Meven, Daniel Rettenwander, Günther J. Redhammer, and H. Martin R. WilkeningAdv. Mater. Interfaces 06-2020
TiSr antisite: An abundant point defect in SrTiO3Antti Karjalainen, Vera Prozheeva, Ilja Makkonen , Christo Guguschev, Toni Markurt, Matthias Bickermann , and Filip TuomistoJ. Appl. Phys. 06-2020
Approaching the high intrinsic electrical resistivity of NbO2 in epitaxially grown filmsJulian Stoever, Jos E. Boschker , Saud Bin Anooz , Martin Schmidbauer , Peter Petrik , Jutta Schwarzkopf , Martin Albrecht , and Klaus IrmscherApplied Physics Letters 05-2020
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPES. Bin Anooz, R. Grüneberg, C. Wouters , R. Schewski , M. Albrecht , A. Fiedler , K. Irmscher , Z. Galazka , W. Miller , G. Wagner, J. Schwarzkopf , and A. PoppApplied Physics Letters 05-2020
Imprinting Ferromagnetism and Superconductivity in Single Atomic Layers of Molecular SuperlatticesZejun Li, Xiuying Zhang, Xiaoxu Zhao, Jing Li, Tun Seng Herng, Haomin Xu, Fanrong Lin, Pin Lyu, Xinnan Peng, Wei Yu, Xiao Hai, Cheng Chen, Huimin Yang, Jens Martin, Jing Lu, Xin Luo, A. H. Castro Neto, Stephen J. Pennycook, Jun Ding, Yuanping Feng, and Jiong LuAdvanced Materials 05-2020
Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystalsJohannes Boy, Martin Handwerg, Rüdiger Mitdank, Zbigniew Galazka , and Saskia F. FischerAIP Advances 05-2020
Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4Yeaju Jang, Seongyun Hong, Jihoon Seo, Hyeongmin Cho, Kookrin Char , and Zbigniew GalazkaAppl. Phys. Lett. 05-2020
Aluminium self-diffusion in high-purity a-Al2O3: Comparison of Ti-doped and undoped single crystalsPeter Fielitz, Steffen Ganschow, Klemens Kelm, G€unter BorchardtActa Materialia 05-2020