Department Volume Crystals


The department aims to prepare and provide single crystal materials with tailored properties and high yield for use as substrates or components in novel and energy-efficient electronic, optoelectronic, optical/laser, and piezo-/ferroelectric applications. For anticipated industrial application we are fulfilling purity and structural quality constraints while working on reproducibility and yield. We also use our competence to provide unique crystals as a service for materials research.

Research activities

Our materials portfolio ranges from elementary (Si, Ge) and compound semiconductors (GaAs, InP) to the novel oxide semiconductors (e.g. β-Ga2O3), oxide substrates for films with novel functionalities (e.g. strained ferroelectrics), and bulk optical, laser (including fluorides), and piezoelectric crystals. We specialize in high temperature melt growth techniques such as Czochralski, Floating Zone, Bridgman/VGF and EFG. Tailored materials, growth conditions, and numerical modeling are employed to optimize the growth process.

Head of Department

Prof. Dr.-Ing. Matthias Bickermann

Ph. +49 30 6392 3047


Deputy head of department

PD Dr. R. Radhakrishnan Sumathi

Ph. +49 30 6392 3127