Working Group Gallium Nitride - Summary

Gallium nitride (GaN) is a basic material for optoelectronic and high-frequency power electronics.
The lack of low-cost GaN bulk crystals as substrates for homo-epitaxy motivates the search for alternative growth methods to halide vapor phase epitaxy (HVPE) on sapphire or solution growth methods as sodium flux- or ammonothermal growth.
Sodium flux- or ammonothermal growth have the potential to meet the demands of a low-cost substrate production, but their development status is far away from industrial mass production. In contrast, HVPE substrates have a high defect level and the formation efficiency from source materials is low.
We focus on the growth of gallium nitride from the pseudo-halide vapor phase epitaxy (PHVPE). Therefore, we developed a new reactor, in which cyanide ions replace the chloride ions as a chemical transport agent.
In the DFG project QuarzGaN, we investigate the controlled C doping at the reaction of GaCN with ammonia to prepare semi-isolating GaN layers in cooperation with the Technical University Berlin.

Key Publications

K. Kachel, D. Siche, S. Golka, P. Sennikov, M. Bickermann
FTIR Exhaust Gas Analysis of GaN Pseudo-Halide Vapor Phase Growth.
MATER CHEM PHYS 177 (2016) 12  -18
doi:10.1016/j.matchemphys.2016.03.010

K. Jacobs, D. Siche, D. Klimm, H.-J. Rost, D. Gogova
Pseudohalide Vapour Growth of Thick GaN Layers.
J CRYST GROWTH 312 (2010) 750 - 755
doi:10.1016/j.jcrysgro.2009.12.055

R. Zwierz, S. Golka, K. Kachel, D. Siche, R. Fornari, P. Sennikov, A. Vodopyanov, A.V. Pipa
Plasma Enhanced Growth of GaN Single Crystalline Layers from Ga Vapour.
CRYST RES TECHNOL 48  (2013) 186 - 192
doi:10.1002/crat.20120048

K. Kachel, M. Korytov, D. Gogova, Z. Galazka, M. Albrecht, R. Zwierz, D. Siche, S. Golka, A. Kwasniewski, M. Schmidbauer, R. Fornari
A New Approach to Free-Standing GaN Using β-Ga2O3 as a Substrate.
CRYSTENGCOMM 14  (2012) 8536-8540
doi: 10.1039/C2CE25976A

Working Group Gallium Nitride - Methods

  • Numerical simulation of the growth process to optimize the thermal fields gas flows with VirtualReactor©
  • Catalyzed synthesis of HCN carrier gas from ammonia and methane (Degussa process) in a pre-reactor under consideration of safety requirements
  • in Ga source reaction to GaCN and vapor transport to the growth area
  • Reaction with NH3 to carbon doped GaN:C and deposition on different substrates at 1050°C
  • In-situ waste gas analysis by FTIR-spectroscopy to optimize the growth atmosphere
  • Layer analysis by microscopic, electron microscopic, optical and electrical methods

Working Group Gallium Nitride - Publications

K. Kachel, D. Siche, S. Golka, P. Sennikov, M. Bickermann
FTIR Exhaust Gas Analysis of GaN Pseudo-Halide Vapor Phase Growth.
MATER CHEM PHYS 177 (2016) 12  -18
doi:10.1016/j.matchemphys.2016.03.010

O.B. Gadzhiev, P.G. Sennikov, A.I. Petrov, D. Gogova, D. Siche
Gas-Phase Reactions regarding GaN Crystal Growth in Carbon Based Transport System. A Quantum Chemical Study.
CRYST GROWTH DES 13 (2013) 1445 - 1457
doi:10.1021/cg3014738

R. Zwierz, S. Golka, K. Kachel, D. Siche, R. Fornari, P. Sennikov, A. Vodopyanov, A.V. Pipa
Plasma Enhanced Growth of GaN Single Crystalline Layers from Ga Vapour.
CRYST RES TECHNOL 48  (2013) 186 - 192
doi:10.1002/crat.20120048

K. Kachel, M. Korytov, D. Gogova, Z. Galazka, M. Albrecht, R. Zwierz, D. Siche, S. Golka, A. Kwasniewski, M. Schmidbauer, R. Fornari
A New Approach to Free-Standing GaN Using β-Ga2O3 as a Substrate.
CRYSTENGCOMM 14  (2012) 8536-8540
doi: 10.1039/C2CE25976A

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