Working Group Semiconducting Oxide Layers - Summary

Metal oxides like Ga2O3, In2O3, ZnO, and SnO2 are used in large scale as transparent conductive oxide (TCO). This kind of materials have a big industrial relevance and there are used as front contacts at solar cells, liquid crystal displays and as a chemical sensor. Lately, the interest in these materials is concentrated on applications as transparent semiconducting oxide (TSO). Ga2O3 (4.8 eV) and In2O3 (2.9 eV ) have very different band gaps. By growing a ternary Ga1-xInx)2O3 material it will be possible to tune the band gap of the layers and also the electronic properties in relation to the desired application. This opens the possibility to create a new class of semiconductors with applications in power electronic, deep-UV detection and for chemical sensors.
At the IKZ we have the unique advantage that we can combine the growth of β-Ga2O3 single crystal with high crystalline perfection, the preparation of single-crystalline substrates and the growth of epitaxial layers with tuned electrical properties. The IKZ has a pioneering role in the homoepitaxial growth of Ga2O3 by using the MOVPE technology in the world. A commercial vertically MOVPE system is used for the homoepitaxial growth of the layers.
By using triethylgallium and oxygen as precursors the growth of single crystalline, semiconducting n-type β-Ga2O3 layers was demonstrated. The analysis of the crystalline perfection has shown that planar defects and twin boundaries are the main defects which are responsible for the compensation of free carriers in the layers. The use of off-oriented (100) and (010) oriented substrates for the layer deposition has demonstrated the opportunity to decrease significantly the defect density in the layers. As a result of the reduction of the defect density in the layers also the electrical properties were strong improved. Now the electrical performance of the layers is equal to that of the single crystals or better.

Key Publications

G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm, R. Fornari,
Homoepitaxial Growth of β-Ga2O3 Layers by Metal-Organic Vapor Phase Epitaxy.
PHYS Status Solidi A 211 (2014) 27 - 31
doi:10.1002/pssa.20133009

M. Baldini, D. Gogova, K. Irmscher, M. Schmidbauer, G. Wagner, R. Fornari,
Heteroepitaxy of Ga2(1-X)In2xO3 Layers by MOVPE with Two Different Oxygen Sources.
CRYST RES TECHNOL 49 (2014) 552 - 557
doi:10.1002/crat.201300410

M. Baldini, G. Wagner, M. Albrecht, D. Gogova, R. Schewski
Effect of Indium as a Surfactant in (Ga1-XInx)2O3 Epitaxial Growth on β-Ga2O3 by Metal Organic Vapour Phase Epitaxy.
Semicond. Sci.and Technol. 30 (2015) 024013
doi:10.1088/0268-1242/30/2/024013

R. Schewski, G. Wagner, M. Baldini, D. Gogova, Z. Galazka, T. Schulz, T. Remmele, T. Markurt, H. von Wenckstern, M. Grundmann, O. Bierwagen, P.  Vogt, M. Albrecht
Epitaxial Stabilization of Pseudomorphic α-Ga2O3 on Sapphire (0001).
Applied Physics Express 8 (2015) 011101
doi:10.7567/APEX.8.011101 

M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, D. Klimm, R. Schewski and G. Wagner
Semiconducting Sn-Doped β-Ga2O3 Homoepitaxial Layers Grown by Metal-Organic Vapor-Phase Epitaxy.
J. MATER SCI 51 (2016) 3650 - 3656
doi:10.1007/s10853-015-9693-6

Working Group Semiconducting Oxide Layers - Methods

Growth Methods

  • Metal-Organic Vapour Phase Epitaxy (MO-VPE)

 

Characterization Methods

  • Atomic Force Microscopy (AFM)

  • Scanning Electron Microscopy (SEM)

    Spectral Ellipsometry (SE)

Working Group Semiconducting Oxide Layers - Publications

K. D. Chabak,. N. Moser, A. J. Green, D. E. Walker, Jr.,S. E. Tetlak, E. Heller, A. Crespo, R. Fitch, J. P. Mc Candless, K. Leedy,  M. Baldini, G. Wagner, Z. Galazka, X. Li, G. Jessen
Enhancement-Mode Ga2O3 Wrap-Gate Fin Field-Effect Transistors on Native (100) β-Ga2O3 Substrate with High Breakdown Voltage
APPL PHYS LETT 109 (2016) 213501
doi: org/10.1063/1.4967931

M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, G. Wagner
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates
ECS J SOLID STAT SCI TECHN 6 (2016) Q1-Q5             
doi: org/10.1149/2.0081702jss

A.J. Green, K.D. Chabak, E.R. Heller, R.C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G. Wagner, Z. Galazka,
S.E. Tetlak, A. Crespo, K. Leedy, G. H. Jessen
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs
IEEE ELECTR DEVICE L 37 (2016) 902 - 905
doi: 10.1109/LED.2016.2568139

M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, D. Klimm, R. Schewski, G. Wagner
Semiconducting Sn-Doped β-Ga2O3 Homoepitaxial Layers Grown by Metal Organic Vapour-Phase Epitaxy.
J Mater Sci 51 (2016) 3650 – 3656
doi: 10.1007/s10853-015-9693-6

E. Korhonen, F. Tuomisto, D. Gogova, G. Wagner, M. Baldini, Z. Galazka, R. Schewski, M. Albrecht
Electrical Compensation by Ga Vacancies in Ga2O3 Thin Films.
APPL PHYS LETT 106 (2015) 242103
dx.doi.org/10.1063/1.4922814

R. Schewski, G. Wagner, M. Baldini, D. Gogova, Z. Galazka, T. Schulz, T. Remmele, T. Markurt, H. von Wenckstern, M. Grundmann, O. Bierwagen, P.  Vogt, M. Albrecht
Epitaxial Stabilization of Pseudomorphic α-Ga2O3 on Sapphire (0001).
APPL PHYS EXPRESS 8 (2015) 011101
doi:10.7567/APEX.8.011101

M. Baldini, M. Albrecht, D. Gogova, R. Schewski
Effect of Indium as a Surfactant in (Ga1-XInx)2O3 Epitaxial Growth on β-Ga2O3 by Metal Organic Vapour Phase Epitaxy.
SEMICOND SCI TECH 30 (2015) 024013
doi:10.1088/0268-1242/30/2/024013

G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm, R. Fornari
Homoepitaxial Growth of β-Ga2O3 Layers by Metal-Organic Vapor Phase Epitaxy.
PHYS STATUS SOLIDI A 211 (2014) 27 - 31
doi:10.1002/pssa.20133009

D. Gogova, G. Wagner, M. Baldini, M. Schmidbauer, K. Irmscher, R. Schewski, Z. Galazka, M. Albrecht, R. Fornari
Structural Properties of Si-Doped β-Ga2O3 Layers Grown by MOVPE.
J CRYST GROWTH 401 (2014) 665 - 669
doi:10.1016/j.jcrysgro.2013.11.056

M. Baldini, D. Gogova, K. Irmscher, M. Schmidbauer, G. Wagner, R. Fornari
Heteroepitaxy of Ga2(1-X)In2xO3 Layers by MOVPE with Two Different Oxygen Sources.
CRYST RES TECHNOL 49 (2014) 552 - 557
doi:10.1002/crat.201300410

G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm, R. Fornari
Homoepitaxial Growth of β-Ga2O3 Layers by Metal-Organic Vapor Phase Epitaxy.
PHYS STATUS SOLIDI A 211 (2014) 27 - 31
doi:10.1002/pssa.20133009

D. Gogova, G. Wagner, M. Baldini, M. Schmidbauer, K. Irmscher, R. Schewski, Z. Galazka, M. Albrecht, R. Fornari
Structural Properties of Si-Doped β-Ga2O3 Layers Grown by MOVPE.
J CRYST GROWTH 401 (2014) 665 - 669
doi:10.1016/j.jcrysgro.2013.11.056

M. Baldini, D. Gogova, K. Irmscher, M. Schmidbauer, G. Wagner, R. Fornari
Heteroepitaxy of Ga2(1-X)In2xO3 Layers by MOVPE with Two Different Oxygen Sources.
CRYST RES TECHNOL 49 (2014) 552 - 557
doi:10.1002/crat.201300410

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