Working Group Electron Microscopy - Summary

The electron microscopy group performs scientific service and basic research in the field of characterization of crystalline material by means of electron microscopy. The group is mainly focussing on investigating the relation between physical properties and structure of semiconductors and oxides. Important topics are structure and physical properties of defects and interfaces, elementary growth mechanisms of epitaxial layers, thermodynamics and kinetics of alloys, phase formation oxides as well as plastic and elastic processes during heteroepitaxial growth.

The applied methods cover a broad range of the most modern electron microscopy techniques. This range from scanning electron microscopy based techniques through transmission electron microscopy to scanning transmission electron microscopy with atomic resolution. Besides imaging and analytical techniques, in-situ techniques of transmission electron microscopy are applied.

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For data evaluation, experimental results are compared to computer simulations. Furthermore, we perform methodological work to improve electron optical imaging techniques and to adapt these techniques to specific problems at the institute. In many cases, experimental results are taken as a starting point for in-depth theoretical considerations that are performed at the institute or with external partners. 

The group is partnering with a number of collaborative national and international research projects.

Key Publications

S. Mohn, N. Stolyarchuk, T. Markurt, R. Kirste, M. P. Hoffmann, R. Collazo, A. Courville, R. Di Felice, Z. Sitar, P. Vennéguès, and M. Albrecht
Polarity Control in Group-III Nitrides beyond Pragmatism.
PHYS REV APPLIED 5 (2016) 054004

M. Albrecht, R. Schewski, K. Irmscher, Z. Galazka, T. Markurt, M. Naumann, T. Schulz, R. Uecker, R. Fornari, S. Meuret and M. Kociak
Coloration and Oxygen Vacancies in Wide Band Gap Oxide Semiconductors: Absorption at Metallic Nanoparticles Induced by Vacancy Clustering. A Case Study on Indium Oxide.
J APPL PHYS 115 (2014) 053504

M. Albrecht, L. Lymperakis and J. Neugebauer
Origin of the Unusually Strong Luminescence of A-Type Screw Dislocations in GaN. 
PHYS REV B90 (2014) 241201(R) 

T. Schulz, A. Duff, T. Remmele, T. Markurt, L. Lymperakis, J. Neugebauer, C. Cheze, C. Skierbiszewski and M. Albrecht
Separating Strain from Composition in Unit Cell Parameter Maps Obtained from Aberration Corrected High-Resolution Transmission Electron Microscopy Imaging.
J APPL PHYS 115 (2014) 033113

T. Markurt, L. Lymperakis, J. Neugebauer, P. Drechsel, P. Stauss, T. Schulz, T. Remmele, V. Grillo, E. Rotunno, and M. Albrecht
Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN.
PHYS REV LETT 110 (2013) 036103 

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