Patents & Licenses

Our mission is to identify and secure potential innovations together with our scientists, research partners and industrial collaborators, and to stimulate and accompany their commercial exploitation.

The Leibniz-Institut für Kristallzüchtung possesses an extensive patent portfolio, which is being continuously expanded. The portfolio encompasses all of the institute's key research areas and can be licensed to companies if they are interested.

Licenses entitle you to use our comprehensive, proprietary, technical know-how, which is constantly expanding and can lead to new products and innovative processes. The type and scope of the licenses are varying, as well as their form that can be agreed upon individually.

For further information please contact us.


Crystal growth in the magnetic field: Semiconductor group III-V, IV 


Ch. Frank-Rotsch, P. Rudolph, O. Klein, B. Nacke, R.-P. Lange
Device and method for producing crystals from electrically conductive melts
DE102007028548B4; EP2162571B1 (08784553.3) (DK, ES, FR, NO) KRISTMAG®


R.-P. Lange, D. Jockel, B. Nacke, H. Kasjanow, M. Ziem, P. Rudolph, F. Kießling, Ch. Frank-Rotsch, M. Czupalla
Device for producing crystals from electroconductive melts
DE102007028547B4; EP 2162570B1 (08784554.1) (DK, ES, FR, NO) KRISTMAG®


Ch. Frank-Rotsch, P. Rudolph, R.-P. Lange, D. Jockel
Vorrichtung und Verfahren zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen
(Device and method for producing crystals from electrically conductive melts)
DE102007046409B4 KRISTMAG®


M. Ziem, P. Rudolph, R.-P. Lange
Device for the manufacture of crystals from electrically conductive melts
DE102007020239B4 KRISTMAG®


R.-P. Lange, P. Rudolph, M. Ziem
Vorrichtung zur Herstellung von Kristallen aus elektrisch leitenden Schmelzen
(Device for producing crystals from electroconductive melts)
DE102008035439B4


F. Büllesfeld, N. Dropka, W. Miller, U. Rehse, U. Sahr, P. Rudolph
Method for freezing a nonmetal melt
EP 2370617B1 (09749132.8) (DE, ES, IT, NO, FR, GB)


N. Dropka, P. Rudolph, U. Rehse
Verfahren zur Herstellung von Kristallblöcken hoher Reinheit
(Method for the preparation of crystalline blocks of high purity)
DE102010028173B4


N. Dropka, Ch. Frank-Rotsch, P. Lange, M. Ziem
Verfahren und Vorrichtung zur gerichteten Kristallisation von Kristallen aus elektrisch leitenden Schmelzen
(Method and device for the manufacture of crystals by directed solidification from electrically conducting melts)
DE102012204313B3


N. Dropka, Ch. Frank-Rotsch, P. Rudolph, R.-P. Lange, U. Rehse
Crystallization system and crystallization process for producing a block from a material with an electrically conductive molten mass
DE102010041061B4


M. Czupalla, B. Lux, F. Kießling, O. Klein, P. Rudolph, W. Miller, M. Ziem, F. Kirscht, R.-P. Lange
Verfahren zur Züchtung von Kristallen aus elektrisch leitenden Schmelzen, die in der Diamant- oder Zinkblendestruktur kristallisieren
(Method for growing crystals that crystallize in diamond or zinc blende structure from electrically conductive melts)
DE102009027436B4


F. Kießling, , P. Rudolph, Ch. Frank-Rotsch, N. Dropka
Verfahren zur gerichteten Kristallisation von Ingots
(Method for the directed solidification of ingots)
DE102011076860B4


N. Dropka, Ch. Frank-Rotsch, P. Lange, P. Krause
Crystallisation system and crystallisation method for crystallisation from electrically conductive melts, and ingots that can be obtained by means of the method
DE102013211769A1  


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KRISTMAG® 

  

 

Group IV Semiconductors: Float Zone, self crucible process


M. Wünscher, H. Riemann
Apparatus for continuous zone-melting a crystalline rod
DE102012022965B4, EP 2920342B1 (DE, DK, LV)


N. Abrosimov, J. Fischer, H. Riemann, M. Renner
Process and apparatus for producing semiconductor single crystals
EP2504470B1 (NO, ES, NL, FR, DK, GB, BE, IT), DE102010052522B4, JP 5484589B2, US 9422636

 

 

Oxides


Z. Galazka, R. Uecker, D. Klimm, M. Bickermann
Method for growing beta phase of gallium oxide (ß-Ga2O3) single crystals from the melt contained within a metal crucible
EP3242965B1 (AT, BE, CH, DE, CZ, ES, FR, GB, IT, NL, PL), KR101979130B1, US20170362738A1


Z. Galazka, R. Uecker, R. Fornari
Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal
EP2841630B1 (DE, BE, FR, GB, IT), JP 6134379B2, US10208399

 

 

Aluminium nitride


A. Dittmar, C. Hartmann, J. Wollweber, M. Bickermann
(Sc,Y):AlN single crystals for lattice-matched AlGaN systems
DE102015116068A1, KR1020180048926A

 

A. Dittmar, C. Hartmann, J. Wollweber, U. Degenhardt, F. Stegner
Keimhalter einer Einkristallzüchtungsvorrichtung, Einkristallzüchtungsvorrichtung und Kompositwerkstoff
(Seed holder of a single crystal growth device, single crystal growth device and composite material)
DE102014017021A1  

 

 

Semiconducting layers

T. Boeck, R. Heimburger, G. Schadow, H.-P. Schramm, J. Schmidtbauer, T. Teubner, R. Fornari
Kristallisationsverfahren zur Erzeugung kristalliner Halbleiterschichten
(Crystallization method for producing crystalline semiconducting layers)
DE102010044014A1

Dr. Maike Schröder
Tel.: +49 30 6392 3008
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