Publikationen

PublikationVeröffentlichungDatum
Mid-Infrared spectroscopic characterization of Pr3+:Lu2O3A. Toncelli, Xu, Jihua; Tredicucci, Alessandro; Heuer, Alexander M.; Kraenkel, ChristianOptical Materials Express, Vol. 9, Issue11, pp. 4464-447311-2019
Influence of 2s Bloch wave state excitations on quantitative HAADF STEM imagingC. Wouters, Markurt, T.; Albrecht, M.; Rotunno, E.; Grillo, V.Physical Review B, Vol. 100, Iss. 18, 201911-2019
Semiconductor Crystal Growth under the Influence of Magnetic FieldsCh. Frank-Rotsch, Natasha Dropka, Frank-Michael Kießling, and Peter RudolphCryst. Res. Technol.10-2019
Thermoelastic properties of rare-earth scandates SmScO3, TbScO3 and DyScO3C. Hirschle, J. Schreuer,  S. Ganschow, and I. Schulze-JonackJournal of Applied Physics 126, 165103 (2019)10-2019
Ferroelectric Domain Walls in PbTiO3 Are Effective Regulators of Heat Flow at Room TemperatureE. Langenberg, Saha, Dipanjan; Holtz, Megan E.; Wang, Jian-Jun; Bugallo, David; Ferreiro-Vila, Elias; Paik, Hanjong; Hanke, Isabelle; Ganschow, Steffen; Muller, David A.; Chen, Long-Qing; Catalan, Gustau; Domingo, Neus; Malen, Jonathan; Schlom, Darrell G.; Rivadulla, FranciscoNano Lett. 2019, 19, 11, 7901–790710-2019
Thin channel ß -Ga2O3 MOSFETs with self-aligned refractory metal gatesK. J. Liddy, Green, Andrew J.; Hendricks, Nolan S.; Heller, Eric R.; Moser, Neil A.; Leedy, Kevin D.; Popp, Andreas; Lindquist, Miles T.; Tetlak, Stephen E.; Wagner, Guenter; Chabak, Kelson D.; Jessen, Gregg H.Applied Physics Express, Volume 12, Number 1210-2019
Growth and Properties of Intentionally Carbon-Doped GaN LayersE. Richter, Franziska C. Beyer, Friederike Zimmermann, Günter Gärtner, Klaus Irmscher, Ivan Gamov, Johannes Heitmann, Markus Weyers, and Günther TränkleCryst. Res. Technol. 2020, 55, 190012910-2019
Transport Properties and Finite Size Effects in ß-Ga203 thin filmsJohannes Boy, Martin Handwerg, Olivio Chiatti, Rüdiger Mitdank, Günter Wagner, Zbigniew Galazka, Saskia F. FischerScientific Reports volume 9, Article number: 13149 (2019)09-2019
Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline siliconL.-Ch. Chuang, Maeda,Kensaku; Morito, Haruhiko; Shiga, Keiji; Miller, Wolfram; Fujiwara, KozoMaterialia, Volume 7, September 2019, 10035709-2019
Fast forecasting of VGF crystal growth process by dynamic neural networksN. Dropka, Martin Holena, Stefan Ecklebe, Christiane Frank-Rotsch, Jan WinklerJournal of Crystal Growth09-2019
Deep-level noise characterization of MOVPE-grown ß-Ga2O3Ch. Golz, Galazka, Zbigniew; Popp, Andreas; Bin Anooz, Saud; Wagner, Guenter; Hatami, Fariba; Masselink, W. TedAppl. Phys. Lett. 115, 133504 (2019)09-2019
Selective etching of fs-laser inscribed high aspect ratio microstructures in YAGK. Hasse, G. Huber, and C. KränkelOptical Materials Express Vol. 9, Issue 9, pp. 3627-3637 (2019)09-2019
REScO3 Substrates-Purveyors of Strain EngineeringD. Klimm, Guguschev, Christo; Ganschow, Steffen; Bickermann, Matthias; Schlom, Darrell G.Crystal Research and Technology, Volume55, Issue2 Special Issue: The 50th Anniversary of the German Association for Crystal Growth (Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung, DGKK), February 2020, 190011109-2019
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated EmissionV. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, and H.-W. HübersSemiconductors, 2019, Vol. 53, No. 9, pp. 1234–123709-2019
Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBEM. Siekacz, Wolny, Pawel; Ernst, Torsten; Grzanka, Ewa; Staszczak, Grzegorz; Suski, Tadeusz; Feduniewicz-Zmuda, Anna; Sawicka, Marta; Moneta, Joanna; Anikeeva, Mariia; Schulz, Tobias; Albrecht, Martin; Skierbiszewski, CzeslawSuperlattices and Microstructures Volume 133, September 2019, 10620909-2019
Lateral 1.8 kV β -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of MeritK. Tretzner, Eldad Bahat Treidel, Oliver Hilt, Andreas Popp, Saud Bin Anooz, Günter Wagner, Andreas Thies, Karina Ickert, Hassan Gargouri, Joachim WürflIEEE Electron Device Letters ( Volume: 40, Issue: 9, Sept. 2019) 09-2019
Directional solidification of gallium under time-dependent magnetic fields with in situ measurements of the melt flow and the solid-liquid interfaceN. Thieme, M. Keil,D. Meier, P. Boenisch, K. Dadzis, O. Paetzold, M. Stelter, L. Buettner, J. CzarskeJournal of Crystal Growth, Volume 522, p. 221-229.09-2019
Polarity Tunable Trionic Electroluminescence in Monolayer WSe2J. Wang, Lin, Fanrong; Verzhbitskiy, Ivan; Watanabe, Kenji; Taniguchi, Takashi; Martin, Jens; Eda, GoldNano Lett. 2019, 19, 10, 7470–747509-2019
Role of interface quality for the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic propertiesM. Althammer, Singh, Amit Vikram; Wimmer, Tobias; Galazka, Zbigniew; Huebl, Hans; Opel, Matthias; Gross, Rudolf; Gupta, ArunavaAppl. Phys. Lett. 115, 092403 (2019)08-2019
Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrateT. Kamikawa, Gandrothula, Srinivas; Araki, Masahiro; Li, Hongjian; Oliva, Valeria Bonito; Wu, Feng; Cohen, Daniel; Speck, James S.; Denbaars, Steven P.; Nakamura, ShujiOptic Express ,Vol. 27, Issue 17, pp. 24717-24723 (201908-2019