Program
Lunch can be taken at various places in the campus
Wednesday, Sept. 7
13:00
Welcome address
M. Higashiwaki1 / M. Bickermann2
1 National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
2 Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
M. Higashiwaki1 / M. Bickermann2
1 National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
2 Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
13:15
Growth of bulk β-Ga2O3 single crystals by the Czochralski method
Zbigniew Galazka
Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
Zbigniew Galazka
Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
14:00
Electrical and optical characterization of β-Ga2O3 bulk crystals
Klaus Irmscher, A. Fiedler, T. Schulz, M. Pietsch, and Z. Galazka Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
Klaus Irmscher, A. Fiedler, T. Schulz, M. Pietsch, and Z. Galazka Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
14:45
Deep-UV photo detectors based on group-III sesquioxides
Holger von Wenckstern
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, D-04103 Leipzig
Holger von Wenckstern
Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstr. 5, D-04103 Leipzig
15:30
Break
16:15
Growth and characterization of β-Ga2O3 single crystals by vertical Bridgman method
Chihiro Miyagawa1 and Keigo Hoshikawa2
1 Fujikoshi Machinery Corp., Nagano, Japan;
2 Faculty of Engineering, Shinshu University, Nagano, Japan
Chihiro Miyagawa1 and Keigo Hoshikawa2
1 Fujikoshi Machinery Corp., Nagano, Japan;
2 Faculty of Engineering, Shinshu University, Nagano, Japan
17:00
EFG growth of single crystal β-Ga2O3 substrates
Akito Kuramata1,2, Kimiyoshi Koshi1,2, Shinya Watanabe1, Yu Yamaoka1,3, Takekazu Masui1,2, and Shigenobu Yamakoshi1,2
1 Tamura Corporation, 2-3-1, Hirosedai, Sayama, Saitama 350-1328, Japan;
2 Novel Crystal Technology, Inc., 2-3-1, Hirosedai, Sayama, Saitama 350-1328, Japan;
3 Koha Co., Ltd., 1-19-43, Higashioizumi, Nerima 178-8511, Tokyo
Akito Kuramata1,2, Kimiyoshi Koshi1,2, Shinya Watanabe1, Yu Yamaoka1,3, Takekazu Masui1,2, and Shigenobu Yamakoshi1,2
1 Tamura Corporation, 2-3-1, Hirosedai, Sayama, Saitama 350-1328, Japan;
2 Novel Crystal Technology, Inc., 2-3-1, Hirosedai, Sayama, Saitama 350-1328, Japan;
3 Koha Co., Ltd., 1-19-43, Higashioizumi, Nerima 178-8511, Tokyo
17:45
Thick and conductivity-controlled homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
Yoshinao Kumagai1, K. Goto1,2, R. Togashi1, H. Murakami1, M. H. Wong3, A. Kuramata2, S. Yamakoshi2, B. Monemar1,4, and M. Higashiwaki3
1 Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
2 Tamura Corporation, Sayama, Saitama 350-1328, Japan;
3 National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;
4 Linkӧping University, SE-581 83 Linkӧping, Sweden
Yoshinao Kumagai1, K. Goto1,2, R. Togashi1, H. Murakami1, M. H. Wong3, A. Kuramata2, S. Yamakoshi2, B. Monemar1,4, and M. Higashiwaki3
1 Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
2 Tamura Corporation, Sayama, Saitama 350-1328, Japan;
3 National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;
4 Linkӧping University, SE-581 83 Linkӧping, Sweden
18:30
> Poster session with snacks and beverages and lab tours at IKZ
21:00
End
Thursday, Sept. 8
09:00
PLD and MBE growth of Ga2O3 and (AlxGa1-x)2O3
Takayoshi Oshima
Department of Electrical and Electronic Engineering, Saga University, Japan
Takayoshi Oshima
Department of Electrical and Electronic Engineering, Saga University, Japan
09:45
Thermodynamics and suboxide kinetics governing the metal incorporation during molecular beam epitaxy of Ga2O3, In2O3, and their alloy
O. Bierwagen and P. Vogt
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
O. Bierwagen and P. Vogt
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
10:30
Break
11:15
Si- and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on different substrate orientations
Michele Baldini, M. Albrecht, F. Fiedler, Z. Galazka, K. Irmscher, R. Schewski, and G. Wagner
Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
Michele Baldini, M. Albrecht, F. Fiedler, Z. Galazka, K. Irmscher, R. Schewski, and G. Wagner
Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
12:00
Properties of α-Ga2O3 and related III-oxides grown by mist CVD
Shizuo Fujita
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan
Shizuo Fujita
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8520, Japan
12:45
Lunchtime
14:15
Progress report on Ga2O3 Materials and Devices
Debdeep Jena
Departments of ECE and MSE, Cornell University, Ithaca NY 14853, USA
Debdeep Jena
Departments of ECE and MSE, Cornell University, Ithaca NY 14853, USA
15:00
Prospects and challenges of power electronics
Hans-Joachim Würfl
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Hans-Joachim Würfl
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
15:45
GaN Power Devices from an Industrial Perspective
Thomas Detzel
Power Management & Multimarket, Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach, Austria
Thomas Detzel
Power Management & Multimarket, Infineon Technologies Austria AG, Siemensstrasse 2, 9500 Villach, Austria
16:30
Ga-based oxide crystals with wide transmission range in visible and IR spectrum for perspective photonics applications.
Vladimir Ouspenski1 and D. Havens2
1 Saint-Gobain Research, France;
2 Saint-Gobain Crystals, USA
Vladimir Ouspenski1 and D. Havens2
1 Saint-Gobain Research, France;
2 Saint-Gobain Crystals, USA
16:40
Physical and Electrical Characterization Assessment of β-Ga2O3 Capacitors with an Al2O3 Gate Dielectric
Chadwin D. Young
Materials Science and Engineering and Electrical Engineering, University of Texas at Dallas, 800 W. Campbell Rd., RL10, Richardson, TX 75080, USA
Chadwin D. Young
Materials Science and Engineering and Electrical Engineering, University of Texas at Dallas, 800 W. Campbell Rd., RL10, Richardson, TX 75080, USA
16:50
Dinner Excursion
21:00
End
Friday, Sept. 9
09:00
Homoepitaxial growth of Ga2O3 by Metal Organic Vapor Phase Epitaxy Studied by Transmission Electron Microscopy
R. Schewski, M. Baldini, T. Markurt, B. Neuschulz T. Remmele, T. Schulz, G. Wagner, and M. Albrecht
Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
R. Schewski, M. Baldini, T. Markurt, B. Neuschulz T. Remmele, T. Schulz, G. Wagner, and M. Albrecht
Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
09:45
Observation of exciton-LO-phonon interaction in β-Ga2O3 single crystals
Takeyoshi Onuma1,2, S. Saito2, K. Sasaki3,2, K. Goto3, T. Masui3, T. Yamaguchi1,
T. Honda1, A. Kuramata3, and M. Higashiwaki2
1 Department of Applied Physics, Kogakuin University, Tokyo, Japan;
2 National Institute of Information and Communications Technology, Tokyo, Japan;
3 Tamura Corporation, Saitama, Japan
Takeyoshi Onuma1,2, S. Saito2, K. Sasaki3,2, K. Goto3, T. Masui3, T. Yamaguchi1,
T. Honda1, A. Kuramata3, and M. Higashiwaki2
1 Department of Applied Physics, Kogakuin University, Tokyo, Japan;
2 National Institute of Information and Communications Technology, Tokyo, Japan;
3 Tamura Corporation, Saitama, Japan
10:30
Break
11:15
Progress in Ga2O3 transistor and diode technologies
Matasaka Higashiwaki1, M. H. Wong1, K. Konishi1, K. Sasaki2,1, K. Goto2,3, R. Togashi3, H. Murakami3,
Y. Kumagai3, B. Monemar3,4, A. Kuramata2, and S. Yamakoshi2
1 National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;
2 Tamura Corporation, Sayama, Saitama 350-1328, Japan;
3 Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
4 Department of Physics, Chemistry and Biology, Linkӧping University, S-581 83 Linkӧping, Sweden
Matasaka Higashiwaki1, M. H. Wong1, K. Konishi1, K. Sasaki2,1, K. Goto2,3, R. Togashi3, H. Murakami3,
Y. Kumagai3, B. Monemar3,4, A. Kuramata2, and S. Yamakoshi2
1 National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;
2 Tamura Corporation, Sayama, Saitama 350-1328, Japan;
3 Department of Applied Chemistry, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
4 Department of Physics, Chemistry and Biology, Linkӧping University, S-581 83 Linkӧping, Sweden
12:00
Electrical Characterization of β-Ga2O3 MOSFETs Grown by MOVPE and MBE on Native Substrates
Gregg Jessen1, A. Green2, N. Moser1, K. Chabak1, E. Heller1, R. Fitch1, S. Tetlak1, A. Crespo1, and K. Leedy1
1 Air Force Research Laboratory, WPAFB, Ohio, USA;
2 Wyle, Dayton, Ohio, USA
Gregg Jessen1, A. Green2, N. Moser1, K. Chabak1, E. Heller1, R. Fitch1, S. Tetlak1, A. Crespo1, and K. Leedy1
1 Air Force Research Laboratory, WPAFB, Ohio, USA;
2 Wyle, Dayton, Ohio, USA
12:45
Summary and closing remarks
M. Higashiwaki1 / M. Bickermann2
1 National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
2 Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
M. Higashiwaki1 / M. Bickermann2
1 National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
2 Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
13:15
End