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Efficient Diameter Enlargement of Bulk AlN Single Crystals with High Structural Quality
C. Hartmann, M. Pinar Kabukcuoglu, C. Richter, A. Klump, D. Schulz, U. Juda, M. Bickermann, D. Hänschke, T. Schröder, T. Straubinger
Appl. Phys. Express (2023) 16 (2023) 075502
DOI: 10.35848/1882-0786/ace60e
manuscript
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Fanout Periodic Poling of BaMgF4 Crystals
S.J. Herr, H. Tanaka, I. Breunig, M. Bickermann, F. Kühnemann
Opt. Mater. Express 13 [8] (2023) 2158-2164
DOI: 10.1364/OME.492170
manuscript
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Solid Solutions of Lithium Niobate and Lithium Tantalate: Crystal Growth and the Ferroelectric Transition
U. Bashir, K. Böttcher, D. Klimm, S. Ganschow, F. Bernhardt, S. Sanna, M. Bickermann
Ferroelectrics 613 (2023) 250-262
DOI: 10.1080/00150193.2023.2189842
manuscript
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Bulk Single Crystals and Physical Properties of ß-(AlxGa1-x)2O3 (x = 0- 0.35) Grown by the Czochralski Method
Z. Galazka, A. Fiedler, A. Popp, S. Ganschow, A. Kwasniewski, P. Seyidov, M. Pietsch, A. Dittmar, S. Bin Anooz, K. Irmscher, M. Suendermann, D. Klimm, T.-S. Chou, J. Rehm, T. Schroeder, M. Bickermann
J. Appl. Phys. 133 (2023) 035702
DOI: 10.1063/5.0131285
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Dislocation Climb in AlN Crystals Grown at Low Temperature Gradients Revealed by 3D X-Ray Imaging
T. Straubinger, C. Hartmann, M.P. Kabukcuoglu, M. Albrecht, M. Bickermann, A. Klump, S. Bode, E. Hamann, S. Haaga, M. Hurst, T. Schröder, D. Hänschke, C. Richter
Crystal Growth Des. 23 (2023) 1538-1546
DOI: 10.1021/acs.cgd.2c01131
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The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 K
D. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. Bickermann
Cryst. Res. Technol. 58 (2023) 2200204
DOI: 10.1002/crat.202200204
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Fingerprints of Carbon Defects in Vibrational Spectra of GaN Considering the Isotope Effect
I. Gamov, J.L. Lyons, G. Gärtner, K. Irmscher, E. Richter, M. Weyers, M.R. Wagner, M. Bickermann
Phys. Rev. B 106 (2022) 184110
DOI: 10.1103/PhysRevB.106.184110
manuscript
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Wüstite (Fe1-xO) - Thermodynamics and Crystal Growth
M. Hamada, S. Ganschow, D. Klimm, G. Serghiou, H. J. Reichmann, M. Bickermann
Z. Naturforsch. B 77 [6] (2022) 463-468
DOI: 10.1515/znb-2022-0071
manuscript
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2 Inch Diameter, Highly Conducting Bulk β-Ga2O3 Single Crystals Grown by the Czochralski Method for High Power Switching Devices
Z. Galazka, S. Ganschow, K. Irmscher, P. Seyidov, M. Pietsch, T.-S. Chou, S. Bin Anooz, R. Grueneberg, A. Popp, A. Dittmar, A. Kwasniewski, M. Suendermann, D. Klimm, T. Straubinger, T. Schroeder, M. Bickermann
Appl. Phys. Lett. 120 (2022) 152101
DOI: 10.1063/5.0086996
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Molten Ba(OH)2 + 10%MgO as Defect Selective Drop Etchant for Dislocation Analysis on AlN Layers
L. Matiwe, C. Hartmann, L. Cancellara, M. Bickermann, A. Klump, J. Wollweber, S. Hagedorn, M. Weyers, T. Straubinger
Phys. Status Solidi A 219 (2022) 2100707
DOI: 10.1002/pssa.202100707
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Phase Diagram Studies for the Growth of (Mg,Zr):SrGa12O19 Crystals
D. Klimm, B. Szczefanowicz, N. Wolff, M. Bickermann
J. Therm. Anal. Calorim. 147 (2022) 7133-7139
DOI: 10.1007/s10973-021-11050-4
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Experimental Hall Electron Mobility of Bulk Single Crystals of Transparent Semiconducting Oxides
Z. Galazka, K. Irmscher, M. Pietsch, S. Ganschow, D. Schulz, D. Klimm, I.M. Hanke, T. Schroeder, M. Bickermann
J. Mater. Res. 36 (2021) 4746-4755
DOI: 10.1557/s43578-021-00353-9
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Melt Growth and Physical Properties of Bulk LaInO3 Single Crystals
Z. Galazka, K. Irmscher, S. Ganschow, M. Zupancic, W. Aggoune, C. Draxl, M. Albrecht, D. Klimm, A. Kwasniewski, T. Schulz, M. Pietsch, A. Dittmar, R. Grueneberg, U. Juda, R. Schewski, K. Char, H. Cho, T. Schroeder, M. Bickermann
Phys. Status Solidi A 218 (2021) 2100016
DOI: 10.1002/pssa.202100016
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Photochromism and Influence of Point Defect Charge States on Optical Absorption in Aluminum Nitride (AlN)
I. Gamov, C. Hartmann, T. Straubinger, M. Bickermann
J. Appl. Phys. 129 (2021) 113103
DOI: 10.1063/5.0044519
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Bulk Single Crystals of β-Ga2O3 and Ga-Based Spinels as Ultra-Wide Bandgap Transparent Semiconducting Oxides
Z. Galazka, S. Ganschow, K. Irmscher, D. Klimm, M. Albrecht, R. Schewski, M. Pietsch, T. Schulz, A. Dittmar, A. Kwasniewski, R. Grueneberg, S. Bin Anooz, A. Popp, U. Juda, I.M. Hanke, T. Schroeder, M. Bickermann
Prog. Cryst. Growth Charact. Mater. 67 (2021) 100511
DOI: 10.1016/j.pcrysgrow.2020.100511
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TiSr Antisite: An Abundant Point Defect in SrTiO3
A. Karjalainen, V. Prozheeva, I. Makkonen, C. Guguschev, T. Markurt, M. Bickermann, F. Tuomisto
J. Appl. Phys. 127 (2020) 245702
DOI: 10.1063/5.0010304
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Favourable Growth Conditions for the Preparation of Bulk AlN Single Crystals by PVT
C. Hartmann, L. Matiwe, J. Wollweber, I. Gamov, K. Irmscher, M. Bickermann, T. Straubinger
CrystEngComm 22 (2020) 1762-1768
DOI: 10.1039/c9ce01952a
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Overgrowth of Nano-Pillar-Patterned Sapphire With Different Offcut Angle by Metalorganic Vapor Phase Epitaxy
S. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R. W. Martin, P. A. Shields, M. Kneissl, M. Weyers
J. Crystal Growth 531 (2020) 125343
DOI: 10.1016/j.jcrysgro.2019.125343
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Czochralski-Grown Bulk β-Ga2O3 Single Crystals Doped with Mono-, Di-, Tri-, and Tetravalent Ions
Z. Galazka, K. Irmscher, R. Schewski, I.M. Hanke, M. Pietsch, S. Ganschow, D. Klimm, A. Dittmar, A. Fiedler, T. Schröder, M. Bickermann
J. Crystal Growth 529 (2020) 125297
DOI: 10.1016/j.jcrysgro.2019.125297
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Bulk β-Ga2O3 Single Crystals Doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for Detection of Nuclear Radiation
Z. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M.E. Witkowski, M. Makowski, A.J. Wojtowicz, I.M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, T. Schröder, M. Bickermann
J. Alloys Compounds 818 (2020) 152842
DOI: 10.1016/j.jallcom.2019.152842
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REScO3 Substrates: Purveyors of Strain Engineering
D. Klimm, C. Guguschev, S. Ganschow, M. Bickermann, D.G. Schlom
Cryst. Res. Technol. 55 [2] (2020) 1900111
DOI: 10.1002/crat.201900111
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Carbon Pair Defects in Aluminum Nitride
I. Gamov, C. Hartmann, J. Wollweber, A. Dittmar, T. Straubinger, M. Bickermann, I. Kogut, H. Fritze, K. Irmscher
J. Appl. Phys. 126 (2019) 215102
DOI: 10.1063/1.5123049
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Electromechanical Losses in Carbon- and Oxygen-Containing Bulk AlN Single Crystals
I. Kogut, C. Hartmann, I. Gamov, Y. Suhak, M. Schulz, S. Schröder, J. Wollweber, A. Dittmar, K. Irmscher, T. Straubinger, M. Bickermann, H. Fritze
Solid State Ionics 343 (2019) 115072
DOI: 10.1016/j.ssi.2019.115072
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Ultra-Wide Bandgap, Conductive and High Mobility Melt-Grown Truly Bulk ZnGa2O4 Single Crystals
Z. Galazka, S. Ganschow, R. Schewski, K. Irmscher, D. Klimm, A. Kwasniewski, M. Pietsch, A. Fiedler, I. Schulze-Jonack, M. Albrecht, M. Bickermann, T. Schröder
APL Materials 7 (2019) 022512
DOI: 10.1063/1.5053867
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Crystal Defect Analysis in AlN Layers Grown by MOVPE on Bulk AlN
A. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. Bickermann
J. Crystal Growth 505 (2018) 69-73
DOI: 10.1016/j.jcrysgro.2018.10.021
manuscript
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Physical Vapor Transport Growth of bulk Al1-xScxN Single Crystals
A. Dittmar, C. Hartmann, D. Klimm, M. Schmidbauer, J. Wollweber, M. Bickermann
J. Crystal Growth 500 (2018) 74-79
DOI: 10.1016/j.jcrysgro.2018.07.022
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The Thermal Conductivity of Single Crystalline AlN
R. Rounds, B. Sarkar, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar, R. Collazo
Appl. Phys. Express 11 (2018) 71001
DOI: 10.7567/APEX.11.071001
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The Influence of Point Defects on the Thermal Conductivity of AlN Crystals
R. Rounds, B. Sarkar, D. Alden, Q. Guo, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar, R. Collazo
J. Appl. Phys. 123 (2018) 185107
DOI: 10.1063/1.5028141
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Doping of Czochralski-Grown Bulk β-Ga2O3 Single Crystals with Cr, Ce and Al
Z. Galazka, S. Ganschow, A. Fiedler, R. Bertram, D. Klimm, K. Irmscher, R. Schewski, M. Pietsch, M. Albrecht, M. Bickermann
J. Crystal Growth 486 (2018) 82-90
DOI: 10.1016/j.jcrysgro.2018.01.022
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Preface: AlN and AlGaN Materials and Devices
M. Bickermann, R. Collazo, E. Monroy, P. Perlin
Phys. Status Solidi A 214 (2017) 1770155
Proceedings preface, European Materials Research Society Fall Meeting 2016 (Symposium F) (EMRS Fall 2016).
DOI: 10.1002/pssa.201770155
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Crystal Growth and Characterization of the Pyrochlore Tb2Ti2O7
D. Klimm, C. Guguschev, D. J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, Maciej Neumann, A. Kwasniewski, D. G. Schlom, M. Bickermann
CrystEngComm 19 (2017) 3908-3914
DOI: 10.1039/C7CE00942A
manuscript
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Czochralski Growth and Characterization of Cerium Doped Calcium Scandate
C. Guguschev, J. Philippen, D. J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram, M. Bickermann
CrystEngComm 19 (2017) 2553-2560
DOI: 10.1039/C7CE00445A
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Carbon Doped GaN Layers Grown by Pseudo-Halide Vapour Phase Epitaxy
D. Siche, R. Zwierz, K. Kachel, N. Jankowski, C. Nenstiel, G. Callsen, M. Bickermann, A. Hoffmann
Cryst. Res. Technol. 52 (2017) 1600364
DOI: 10.1002/crat.201600364
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Melt Growth and Properties of Bulk BaSnO3 Single Crystals
Z. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. Bickermann
J. Phys.: Condens. Matter 29 (2017) 075701
DOI: 10.1088/1361-648X/aa50e2
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Scaling-up of Bulk β-Ga2O3 Single Crystals by the Czochralski Method
Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. Bickermann
ECS J. Solid State Sci. Technol. 6 (2017) Q3007-Q3011
DOI: 10.1149/2.0021702jss
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Top-seeded Solution Growth of SrTiO3 Single Crystals Virtually Free of Mosaicity
C. Guguschev, D. J. Kok, U. Juda, R. Uecker, S. Sintonen, Z. Galazka, M. Bickermann
J. Crystal Growth 468 (2017) 305-310
Invited talk at the 18. International Conference on Crystal Growth and Epitaxy (ICCGE-18) by C. Guguschev, Nagoya, Japan on Aug 7-12, 2016.
DOI: 10.1016/j.jcrysgro.2016.10.048
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Growth and Properties of Bulk AlN Substrates
M. Bickermann
in: III-Nitride Ultraviolet Emitters - Technology and applications, M. Kneissl and J. Rass (eds.), Springer Series in Materials Science 227, Springer Verlag 2016,
ISBN: 978-3-319-24098-5, Chapter 2 (2016)
DOI: 10.1007/978-3-319-24100-5_2
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Preparation of Deep UV Transparent AlN Substrates with High Structural Perfection for Optoelectronic Devices
C. Hartmann, J. Wollweber, S. Sintonen, A. Dittmar, L. Kirste, S. Kollowa, K. Irmscher, M. Bickermann
CrystEngComm 18 (2016) 3488-3497
DOI: 10.1039/C6CE00622A
manuscript
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FTIR Exhaust Gas Analysis of GaN Pseudo-Halide Vapour Phase Growth
K. Kachel, D. Siche, S. Golka, P. Sennikov, M. Bickermann
Mater. Chem. Phys. 177 (2016) 12-18
DOI: 10.1016/j.matchemphys.2016.03.010
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Precipitates Originating from Tungsten Crucible Parts in AlN Bulk Crystals Grown by the PVT Method
F. Langhans, S. Kiefer, C. Hartmann, T. Markurt, T. Schulz, C. Guguschev, M. Naumann, S. Kollowa, A. Dittmar, J. Wollweber, M. Bickermann
Cryst. Res. Technol. 51 (2016) 129-136
DOI: 10.1002/crat.201500201
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Vapor Transport Growth of Wide Bandgap Materials
M. Bickermann, T. Paskova
in: Handbook of Crystal Growth, Second Edition, Vol 2A: Bulk Crystal Growth - Basic Technologies, P. Rudolph (ed.), Elsevier Science Ltd. 2015,
ISBN: 978-0-44463-303-3, Chapter 16 (2015)
DOI: 10.1016/B978-0-444-63303-3.00016-X
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MgGa2O4 as a New Wide Bandgap Transparent Semiconducting Oxide - Growth and Properties of Bulk Single Crystals
Z. Galazka, D. Klimm, K. Irmscher, R. Uecker, M. Pietsch, R. Bertram, M. Naumann, A. Kwasniewski, R. Schewski, M. Bickermann
Phys. Status Solidi A 212 (2015) 1455-1460
DOI: 10.1002/pssa.201431835
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Influence of Oxygen Partial Pressure on SrTiO3 Bulk Crystal Growth from Non-stoichiometric Melts
C. Guguschev, D. J. Kok, Z. Galazka, D. Klimm, R. Uecker, R. Bertram, M. Naumann, U. Juda, A. Kwasniewski, M. Bickermann
CrystEngComm 17 (2015) 3224-3234
DOI: 10.1039/C5CE00095E
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Temperature Dependent Dielectric Function and Reflectivity Spectra of Nonpolar Wurtzite AlN
M. Feneberg, M. F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, R. Goldhahn
Thin Solid Films 571 (2014) 502-505
Presentation at the 6. International Conference on Spectroscopic Ellipsometry (ICSE-VI) by M. Feneberg, Kyoto, Japan on May 26-31, 2013.
DOI: 10.1016/j.tsf.2013.10.092
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Growth, Characterization, and Properties of Bulk SnO2 Single Crystals
Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Pietsch, R. Schewski, M. Albrecht, A. Kwasniewski, S. Ganschow, D. Schulz, C. Guguschev, R. Bertram, M. Bickermann, R. Fornari
Phys. Status Solidi A 211 (2014) 66-73
DOI: 10.1002/pssa.201330020
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On the Bulk β-Ga2O3 Single Crystals Grown by the Czochralski Method
Z. Galazka, K. Irmscher, R. Uecker, R. Bertram, M. Pietsch, A. Kwasniewski, M. Naumann, T. Schulz, R. Schewski, D. Klimm, M. Bickermann
J. Crystal Growth 404 (2014) 184-191
DOI: 10.1016/j.jcrysgro.2014.07.021
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A Study of the Step-flow Growth of the PVT-grown AlN Crystals by Multi-scale Modeling Method
W. Guo, J. Kundin, M. Bickermann, H. Emmerich
CrystEngComm 16 [29] (2014) 6564-6577
DOI: 10.1039/C4CE00175C
manuscript
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Bulk AlN Growth by Physical Vapor Transport
C. Hartmann, A. Dittmar, J. Wollweber, M. Bickermann
Semicond. Sci. Technol. 29 (2014) 084002
DOI: 10.1088/0268-1242/29/8/084002
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Performance Characteristics of UV-C AlGaN Quantum Well Lasers Grown on Sapphire and Bulk AlN Substrates
M. Martens, F. Mehnke, C. Kuhn, C. Reich, V. Kueller, A. Knauer, C. Netzel, C. Hartmann, J. Wollweber, J. Rass, T. Wernicke, M. Bickermann, M. Weyers, M. Kneissl
IEEE Photonics Lett. 26 [4] (2014) 342-345
DOI: 10.1109/LPT.2013.2293611
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Negative Spin-Exchange Splitting in the Exciton Fine Structure of AlN
M. Feneberg, M. F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, R. Goldhahn
Appl. Phys. Lett. 102 (2013) 052112
DOI: 10.1063/1.4790645
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Anisotropic Absorption and Emission of Bulk (1-100) AlN
M. Feneberg, M. F. Romero, M. Röppischer, C. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, R. Goldhahn
Phys. Rev. B 87 (2013) 235209
DOI: 10.1103/PhysRevB.87.235209
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Perpetuating Structural Perfection of Bulk AlN Single Crystals Using PVT Growth on AlN Seeds Cut from Freestanding Crystals
C. Hartmann, J. Wollweber, A. Dittmar, K. Irmscher, A. Kwasniewski, F. Langhans, T. Neugut, M. Bickermann
Jpn. J. Appl. Phys. 52 (2013) 08JA06
Presentation at the International Workshop on Nitride Semiconductors 2012 (IWN 2012) by C. Hartmann, Sapporo, Japan on Oct 15-19, 2012.
DOI: 10.7567/JJAP.52.08JA06
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Identification of a Tri-carbon Defect and its Relation to the Ultraviolet Absorption in Aluminum Nitride
K. Irmscher, C. Hartmann, C. Guguschev, M. Pietsch, J. Wollweber, M. Bickermann
J. Appl. Phys. 114 (2013) 123505
DOI: 10.1063/1.4821848
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Faceting in AlN Bulk Crystal Growth and its Impact on Optical Properties of the Crystals
M. Bickermann, B. M. Epelbaum, O. Filip, B. Tautz, P. Heimann, A. Winnacker
Phys. Status Solidi C 9 [3-4] (2012) 449-452
Presentation at the 9. International Conference on Nitride Semiconductors (ICNS-9).
DOI: 10.1002/pssc.201100345
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slides
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Ohmic and Rectifying Contacts on Bulk AlN for Radiation Detector Applications
T. Erlbacher, M. Bickermann, B. Kallinger, E. Meissner, A. J. Bauer, L. Frey
Phys. Status Solidi C 9 [3-4] (2012) 968-971
Poster at the 9. International Conference on Nitride Semiconductors (ICNS-9) by T. Erlbacher, Glasgow, Great Britain on July 10-15, 2011.
DOI: 10.1002/pssc.201100341
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Growth of Bulk AlN Single Crystals with Low Oxygen Content Taking into Account Thermal and Kinetic Effects of Oxygen-related Gaseous Species
C. Guguschev, A. Dittmar, E. Moukhina, C. Hartmann, S. Golka, J. Wollweber, M. Bickermann, R.Fornari
J. Crystal Growth 360 (2012) 185-188
DOI: 10.1016/j.jcrysgro.2012.02.019
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Growth of AlN Bulk Crystals on SiC Seeds: Chemical Analysis and Crystal Properties
M. Bickermann, O. Filip, B.M. Epelbaum, P. Heimann, M. Feneberg, B. Neuschl, K. Thonke, E. Wedler, A. Winnacker
J. Crystal Growth 339 (2012) 13-21
DOI: 10.1016/j.jcrysgro.2011.11.043
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Structural Defects in Aluminum Nitride Bulk Crystals Visualized by Cathodoluminescence Maps
M. Bickermann, S. Schimmel, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
Phys. Status Solidi C 8 [7-8] (2011) 2235-2238
Presentation at the International Workshop on Nitride Seminconductors 2010 (IWN 2010).
DOI: 10.1002/pssc.201000864
manuscript
slides
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Thermally Stimulated Luminescence in Aluminium Nitride Crystals
M. Bickermann, S. Schuster, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
Phys. Status Solidi C 8 [7-8] (2011) 2104-2106
Poster at the International Workshop on Nitride Seminconductors 2010 (IWN 2010).
DOI: 10.1002/pssc.201000863
manuscript
poster
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Silicon in AlN: Shallow Donor and DX Behaviors
N. T. Son, M. Bickermann, E. Janzén
Phys. Status Solidi C 8 [7-8] (2011) 2167-2169
Presentation at the International Workshop on Nitride Seminconductors 2010 (IWN 2010) by N. T. Son, Tampa, Florida, USA on Sep 19-24, 2010.
DOI: 10.1002/pssc.201001030
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Effects of Growth Direction and Polarity on Bulk Aluminum Nitride Crystal Properties
O. Filip, B. M. Epelbaum, M. Bickermann, P. Heimann, A. Winnacker
J. Crystal Growth 318 (2011) 427-431
Presentation at the 16. International Conference on Crystal Growth (ICCG-16) by O. Filip, Beijing, China on Aug 16-21, 2010.
DOI: 10.1016/j.jcrysgro.2010.10.198
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Defects at Nitrogen Site in Electron-irradiated AlN
N. T. Son, A. Gali, Á. Szabó, M. Bickermann, T. Ohshima, J. Isoya, E. Janzén
Appl. Phys. Lett. 98 (2011) 242116
DOI: 10.1063/1.3600638
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Shallow Donor and DX States of Si in AlN
N. T. Son, M. Bickermann, E. Janzén
Appl. Phys. Lett. 98 (2011) 092104
DOI: 10.1063/1.3559914
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Deep-UV Transparent Bulk Single-crystalline AlN Substrates
M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, M. Feneberg, S. Nagata, A. Winnacker
Phys. Status Solidi C 7 [7-8] (2010) 1743-1745
Presentation at the 8. International Conference about Nitride Semiconductors (ICNS-8).
DOI: 10.1002/pssc.200983422
manuscript
slides
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Sublimation Growth of Bulk Crystals of AlN-Rich (AlN)x(SiC)1–x Solid Solutions
M. Bickermann, O. Filip, B. M. Epelbaum, P. Heimann, A. Winnacker
Phys. Status Solidi C 7 [7-8] (2010) 1746-1748
Poster at the 8. International Conference about Nitride Semiconductors (ICNS-8).
DOI: 10.1002/pssc.200983423
manuscript
poster
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UV Transparent Single-Crystalline Bulk AlN Substrates
M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
Phys. Status Solidi C 7 [1] (2010) 21-24
Presentation at the European Materials Research Society Spring Meeting 2009 (Symposium J) (EMRS Spring 2009).
DOI: 10.1002/pssc.200982601
manuscript
slides
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Crystal Growth of Mixed AlN-SiC Bulk Crystals
O. Filip, M. Bickermann, B. M. Epelbaum, P. Heimann, A. Winnacker
J. Crystal Growth 312 [18] (2010) 2522-2526
Presentation at the 6. International Workshop on Bulk Nitride Semiconductors (IWBNS-VI) by O. Filip, Galindia, Poland on Aug 23-28, 2009.
DOI: 10.1016/j.jcrysgro.2010.04.006
manuscript
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High-excitation and High-resolution Photoluminescence Spectra of Bulk AlN
M. Feneberg, R.A.R. Leute, B. Neuschl, K. Thonke, M. Bickermann
Phys. Rev. B 82 (2010) 075208
DOI: 10.1103/PhysRevB.82.075208
manuscript
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Point Defect Content and Optical Transitions in Bulk Aluminum Nitride Crystals
M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
Phys. Status Solidi B 246 (2009) 1181-1183
Presentation at the International Workshop on Nitride Seminconductors 2008 (IWN 2008).
DOI: 10.1002/pssb.200880753
manuscript
slides
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Seeded Growth of AlN on (0001)-plane 6H-SiC Substrates
O. Filip, B. M. Epelbaum, M. Bickermann, P. Heimann, S. Nagata, A. Winnacker
Mater. Sci. Forum 615-617 (2009) 983-986
Presentation at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2008) by O. Filip, Barcelona, Spain on Sep 8-12, 2008.
DOI: 10.4028/www.scientific.net/MSF.615-617.983
manuscript
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Defects in AlN: High-frequency EPR and ENDOR Studies
S. B. Orlinskii, P. G. Baranov, A. P. Bundakova, M. Bickermann, J. Schmidt
Physica B 404 (2009) 4873-4876
DOI: 10.1016/j.physb.2009.08.239
manuscript
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Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
O. Filip, B. Epelbaum, J. Li, M. Bickermann, X. Xu, A. Winnacker
Mater. Sci. Forum 600-603 (2009) 23-26
Presentation at the 12. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2007) by O. Filip, Otsu, Kyoto, Japan on Oct 13-19, 2007.
DOI: 10.4028/www.scientific.net/MSF.600-603.23
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Structural Properties of Aluminum Nitride Bulk Single Crystals Grown by PVT
M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
Phys. Status Solidi C 5 [6] (2008) 1502-1504
Poster at the 7. International Conference on Nitride Semiconductors (ICNS-7).
DOI: 10.1002/pssc.200778422
manuscript
poster
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Characterization of Bulk AlN Crystals With Positron Annihilation Spectroscopy
F. Tuomisto, J.-M. Mäki, T. Yu. Chemekova, Yu. N. Makarov, O. V. Avdeev, E. N. Mokhov, A.S. Segal, M. G. Ramm, S. Davis, G. Huminic, H. Helava, M. Bickermann, B. M. Epelbaum
J. Crystal Growth 310 (2008) 3998-4001
Presentation at the 5. International Workshop on Bulk Nitride Semiconductors (IWBNS-V) by F. Tuomisto, Salvador, Bahia, Brazil on Sep 24-28, 2007.
DOI: 10.1016/j.jcrysgro.2008.06.013
manuscript
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Polarization-Dependent Below Band-Gap Optical Absorption of Aluminum Nitride Bulk Crystals
M. Bickermann, A. Münch, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
J. Appl. Phys. 103 (2008) 073522
DOI: 10.1063/1.2903139
manuscript
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Observation of the Triplet Meta-stable State of Shallow Donor Pairs in AlN Crystals with a Negative U Behavior: A High-frequency EPR/ENDOR Study
S. B. Orlinskii, J. Schmidt, P. G. Baranov, M. Bickermann, B. M. Epelbaum, A. Winnacker
Phys. Rev. Lett. 100 (2008) 256404
DOI: 10.1103/PhysRevLett.100.256404
manuscript
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Defect-Selective Etching of Aluminum Nitride Single Crystals
M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata, A. Winnacker
Phys. Status Solidi C 4 [7] (2007) 2609-2612
Poster at the International Workshop on Nitride Seminconductors 2006 (IWN 2006).
DOI: 10.1002/pssc.200674724
manuscript
poster
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Development of Natural Habit of Large Free-Nucleated AlN Single Crystals
B. M. Epelbaum, S. Nagata, M. Bickermann, P. Heimann, A. Winnacker
Phys. Status Solidi B 244 [6] (2007) 1780-1783
Presentation at the International Workshop on Nitride Seminconductors 2006 (IWN 2006) by B. M. Epelbaum, Kyoto, Japan on Oct 22-27, 2006.
DOI: 10.1002/pssb.200674835
manuscript
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Initial Growth Stage in PVT Growth of AlN on SiC Substrates: Influence of Al2O3
P. Heimann, C. Pfeiffer, M. Bickermann, B. M. Epelbaum, S. Nagata, A. Winnacker
Phys. Status Solidi C 4 [7] (2007) 2223-2226
Poster at the International Workshop on Nitride Seminconductors 2006 (IWN 2006) by P. Heimann, Kyoto, Japan on Oct 22-27, 2006.
DOI: 10.1002/pssc.200674723
manuscript
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Growth of 4H-SiC on Rhombohedral (01-14) Plane Seeds
J. Li, O. Filip, B. M. Epelbaum, X. Xu, M. Bickermann, A. Winnacker
J. Crystal Growth 308 (2007) 41-49
DOI: 10.1016/j.jcrysgro.2007.07.039
manuscript
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Similarities and Differences in Sublimation Growth of SiC and AlN
B. M. Epelbaum, M. Bickermann, S. Nagata, P. Heimann, O. Filip, A. Winnacker
J. Crystal Growth 305 (2007) 317-325
Presentation at the 5. International Workshop on Bulk Nitride Semiconductors (IWBNS-IV) by B. M. Epelbaum, Makino, Shiga, Japan on Oct 16-21, 2006.
DOI: 10.1016/j.jcrysgro.2007.04.008
manuscript
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Wet KOH Etching of Freestanding AlN Single Crystals
M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata, A. Winnacker
J. Crystal Growth 300 (2007) 299-307
DOI: 10.1016/j.jcrysgro.2006.12.037
manuscript
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Growth and Characterization of High-quality 6H-SiC (01-15) Bulk Crystals
O. Filip, B. M. Epelbaum, M. Bickermann, A. Winnacker
Mater. Sci. Forum 556-557 (2007) 17-20
Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2006) by O. Filip, Newcastle upon Tyne, Great Britain on Sep 3-7, 2006.
DOI: 10.4028/www.scientific.net/MSF.556-557.17
manuscript
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Photoluminescence, Cathodoluminescence, and Reflectance Study of AlN Layers and AlN Single Crystals
G. M. Prinz, A. Ladenburger, M. Feneberg, M. Schirra, S. B. Thapa, M. Bickermann, B. Epelbaum, F. Scholz, K. Thonke, R. Sauer
Superlatt. Microstruct. 40 (2006) 513-518
Poster at the European Materials Research Society Spring Meeting 2006 (Symposium S) (EMRS Spring 2006) by G. M. Prinz, Nice, France on May 28-Jun 2, 2006.
DOI: 10.1016/j.spmi.2006.10.001
manuscript
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Orientation-Dependent Properties of Aluminum Nitride Single Crystals
M. Bickermann, P. Heimann, B. M. Epelbaum
Phys. Status Solidi C 3 [6] (2006) 1902-1906
Poster at the 6. International Conference on Nitride Semiconductors (ICNS-6).
DOI: 10.1002/pssc.200565255
manuscript
poster
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The Initial Growth Stage in PVT Growth of Aluminum Nitride
P. Heimann, B. M. Epelbaum, M. Bickermann, S. Nagata, A. Winnacker
Phys. Status Solidi C 3 [6] (2006) 1575-1578
Poster at the 6. International Conference on Nitride Semiconductors (ICNS-6) by P. Heimann, Bremen on Aug 28-Sep 2, 2005.
DOI: 10.1002/pssc.200565260
manuscript
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Structural Properties of AlN Crystals Grown by Physical Vapor Transport
M. Bickermann, B. M. Epelbaum, A. Winnacker
Phys. Status Solidi C 2 [7] (2005) 2044-2048
Poster at the International Workshop on Nitride Seminconductors 2004 (IWN 2004).
DOI: 10.1002/pssc.200461422
manuscript
poster
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Comparative Study of Initial Growth Stage in PVT Growth of AlN on SiC and on Native AlN Single-Crystalline Substrates
B. M. Epelbaum, P. Heimann, M. Bickermann, A. Winnacker
Phys. Status Solidi C 2 [7] (2005) 2070-2073
Presentation at the International Workshop on Nitride Seminconductors 2004 (IWN 2004).
DOI: 10.1002/pssc.200461472
manuscript
slides
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Growth and Characterization of Bulk AlN Substrates Grown by PVT
M. Bickermann, B. M. Epelbaum, M. Kazan, Z. Herro, P. Masri, A. Winnacker
Phys. Status Solidi A 202 (2005) 531-535
Presentation at the 7. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2004).
DOI: 10.1002/pssa.200460416
manuscript
slides
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Investigation of (0001) Lattice Plane Bending in Large SiC Crystals Using High Energy X-ray Technique
B. M. Epelbaum, Z. G. Herro, M. Bickermann, C. Seitz, A. Magerl, P. Masri, A. Winnacker
Phys. Status Solidi C 2 [4] (2005) 1288-1291
Poster at the 7. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2004) by B. M. Epelbaum, Montpellier, France on Jun 2-5, 2004.
DOI: 10.1002/pssc.200460428
manuscript
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Orientation-Dependent Phonon Observation in Single-Crystalline Aluminum Nitride
M. Bickermann, B. M. Epelbaum, P. Heimann, Z. G. Herro, A. Winnacker
Appl. Phys. Lett. 86 (2005) 131904
DOI: 10.1063/1.1894610
manuscript
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LPE of Silicon Carbide Using Diluted Si-Ge Flux
O. Filip, B. Epelbaum, M. Bickermann, A. Winnacker
Mater. Sci. Forum 483-485 (2005) 133-136
Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2004) by O. Filip, Bologna, Italy on Aug 31-Sep 4, 2004.
DOI: 10.4028/www.scientific.net/MSF.483-485.133
manuscript
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Liquid Phase Homoepitaxial Growth of 6H-SiC on (01-15) Oriented Substrates
O. Filip, B. Epelbaum, Z. G. Herro, M. Bickermann, A. Winnacker
J. Crystal Growth 282 (2005) 286-289
DOI: 10.1016/j.jcrysgro.2005.05.013
manuscript
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Growth of 6H-SiC Crystals Along the [01-15] Direction
Z. G. Herro, B. M. Epelbaum, M. Bickermann, C. Seitz, A. Magerl, A. Winnacker
J. Crystal Growth 275 (2005) 496-503
DOI: 10.1016/j.jcrysgro.2004.12.024
manuscript
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Approaches to Seeded PVT Growth of AlN Crystals
B. M. Epelbaum, M. Bickermann, A. Winnacker
J. Crystal Growth 275 (2005) e479-e484
Presentation at the 14. International Conference on Crystal Growth (ICCG-14) by B. M. Epelbaum, Grenoble, France on Aug 9-13, 2004.
DOI: 10.1016/j.jcrysgro.2004.11.113
manuscript
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Micropipe Healing in SiC Wafers by Liquid-Phase Epitaxy in Si-Ge Melts
O. Filip, B. Epelbaum, M. Bickermann, A. Winnacker
J. Crystal Growth 271 (2004) 142-150
DOI: 10.1016/j.jcrysgro.2004.07.040
manuscript
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Characterization of Bulk AlN with Low Oxygen Content
M. Bickermann, B. M. Epelbaum, A. Winnacker
J. Crystal Growth 269 (2004) 432-442
DOI: 10.1016/j.jcrysgro.2004.05.071
manuscript
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Natural Growth Habit of Bulk AlN Crystals
B. M. Epelbaum, C. Seitz, A. Magerl, M. Bickermann, A. Winnacker
J. Crystal Growth 265 (2004) 577-581
DOI: 10.1016/j.jcrysgro.2004.02.100
manuscript
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Effective Increase of Single-Crystalline Yield During PVT Growth of SiC by Tailoring of Radial Temperature Gradient
Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, A. Winnacker
J. Crystal Growth 262 (2004) 105-112
DOI: 10.1016/j.jcrysgro.2003.10.060
manuscript
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Structural, Optical, and Electrical Properties of Bulk AlN Crystals Grown by PVT
M. Bickermann, B. M. Epelbaum, A. Winnacker
Mater. Sci. Forum 457-460 (2004) 1541-1544
Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003).
DOI: 10.4028/www.scientific.net/MSF.457-460.1541
manuscript
poster
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Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
M. Bickermann, K. Irmscher, R. Weingärtner, A. Winnacker
Mater. Sci. Forum 457-460 (2004) 787-790
Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003).
DOI: 10.4028/www.scientific.net/MSF.457-460.787
manuscript
poster
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Sublimation Growth of Bulk AlN crystals: Process Temperature and Growth Rate
B. M. Epelbaum, M. Bickermann, A. Winnacker
Mater. Sci. Forum 457-460 (2004) 1537-1540
Presentation at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by B. M. Epelbaum, Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.1537
manuscript
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Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C
B. M. Epelbaum, P. A. Gurzhiyants, Z. Herro, M. Bickermann, A. Winnacker
Mater. Sci. Forum 457-460 (2004) 119-122
Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by B. M. Epelbaum, Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.119
manuscript
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Uniform Axial Charge Carrier Concentration in PVT-grown p-type 6H-SiC by Non-uniform Distribution of Boron in the Powder Source
Z. G. Herro, M. Bickermann, B. M. Epelbaum, R. Weingärtner, U. Künecke, A. Winnacker
Mater. Sci. Forum 457-460 (2004) 719-722
Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by Z. G. Herro, Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.719
manuscript
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Effect of Thermal Field on Interface Step Structures during PVT Growth of Si-face 6H-SiC
Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, A. Winnacker
Mater. Sci. Forum 457-460 (2004) 95-98
Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by Z. G. Herro, Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.95
manuscript
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Natural Crystal Habit and Preferential Growth Directions in PVT of Silicon Carbide
Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, C. Seitz, A. Magerl, A. Winnacker
Mater. Sci. Forum 457-460 (2004) 111-114
Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by Z. G. Herro, Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.111
manuscript
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AFM Investigation of Interface Step Structures On PVT-Grown of (0001)Si 6H-SiC crystals
Z. G. Herro, B. M. Epelbaum, R. Weingärtner, M. Bickermann, P. Masri, A. Winnacker
J. Crystal Growth 270 (2004) 113-120
DOI: 10.1016/j.jcrysgro.2004.05.107
manuscript
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On the Preparation of Vanadium Doped PVT Grown SiC Boules with High Semi-Insulating Yield
M. Bickermann, R. Weingärtner, A. Winnacker
J. Crystal Growth 254 (2003) 390-399
DOI: 10.1016/S0022-0248(03)01179-5
manuscript
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PVT Growth of Bulk AlN Crystals with Low Oxygen Contamination
M. Bickermann, B. M. Epelbaum, A. Winnacker
Phys. Status Solidi C 0 [7] (2003) 1993-1996
Presentation at the 5. International Conference on Nitride Semiconductors (ICNS-5).
DOI: 10.1002/pssc.200303280
manuscript
slides
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Electrical and Optical Characterization of p-Type Boron Doped 6H-SiC Bulk Crystals
M. Bickermann, R. Weingärtner, Z. Herro, D. Hofmann, U. Künecke, P. J. Wellmann, A. Winnacker
Mater. Sci. Forum 433-436 (2003) 337-340
Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002).
DOI: 10.4028/www.scientific.net/MSF.433-436.337
manuscript
poster
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Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping During PVT Bulk Crystal Growth
M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker
Mater. Sci. Forum 433-436 (2003) 51-54
Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002).
DOI: 10.4028/www.scientific.net/MSF.433-436.51
manuscript
poster
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Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
B. M. Epelbaum, M. Bickermann, A. Winnacker
Mater. Sci. Forum 433-436 (2003) 983-986
Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) by B. M. Epelbaum, Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.983
manuscript
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Effective Increase of Single-Crystalline Yield During PVT Growth of SiC by Tailoring of Radial Temperature Gradient
Z. Herro, M. Bickermann, B. M. Epelbaum, P. Masri, A. Winnacker
Mater. Sci. Forum 433-436 (2003) 67-70
Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) by Z. Herro, Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.67
manuscript
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PVT Growth of Co-Doped Semi-Insulating 2 inch 6H-SiC Crystals
M. Rasp, Th. L. Straubinger, E. Schmitt, M. Bickermann, S. Reshanov, H. Sadowski
Mater. Sci. Forum 433-436 (2003) 55-58
Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) by M. Rasp, Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.55
manuscript
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Impact of Compensation on Optical Absorption Bands in the Below Band Gap Region in n-type (N) 6H-SiC
R. Weingärtner, M. Bickermann, Z. Herro, U. Künecke, S. A. Sakwe, P. J. Wellmann, A. Winnacker
Mater. Sci. Forum 433-436 (2003) 333-336
Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) by R. Weingärtner, Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.333
manuscript
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Aluminum p-type Doping of Silicon Carbide Crystals Using a Modified Physical Vapor Transport Growth Method
T. L. Straubinger, M. Bickermann, R. Weingärtner, P. J. Wellmann, A. Winnacker
J. Crystal Growth 240 (2002) 117-123
DOI: 10.1016/S0022-0248(02)00917-X
manuscript
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On the Preparation of Vanadium-Doped Semi-insulating SiC Bulk Crystals
M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker
Mater. Sci. Forum 389-393 (2002) 139-142
Presentation at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001).
DOI: 10.4028/www.scientific.net/MSF.389-393.139
manuscript
slides
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Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
M. Bickermann, R. Weingärtner, D. Hofmann, T. L. Straubinger, A. Winnacker
Mater. Sci. Forum 389-393 (2002) 127-130
Poster at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001).
DOI: 10.4028/www.scientific.net/MSF.389-393.127
manuscript
poster
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Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
B. M. Epelbaum, D. Hofmann, M. Bickermann, A. Winnacker
Mater. Sci. Forum 389-393 (2002) 1445-1448
Presentation at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001).
DOI: 10.4028/www.scientific.net/MSF.389-393.1445
manuscript
slides
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Aluminum Doping of 6H and 4H SiC with a Modified PVT Growth Method
T. L. Straubinger, M. Bickermann, M. Rasp, R. Weingärtner, P. J. Wellmann, A. Winnacker
Mater. Sci. Forum 389-393 (2002) 131-134
Poster at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001) by T. L. Straubinger, Tsukuba, Japan on Oct 28-Nov 2, 2001.
DOI: 10.4028/www.scientific.net/MSF.389-393.131
manuscript
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Determination of Charge Carrier Concentration in n- and p-Doped SiC Based on Optical Absorption Measurements
R. Weingärtner, P. J. Wellmann, M. Bickermann, D. Hofmann, T. L. Straubinger, A. Winnacker
Appl. Phys. Lett. 80 (2002) 70-72
DOI: 10.1063/1.1430262
manuscript
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Optical Quantitative Determination of Doping Levels and their Distribution in SiC
P. J. Wellmann, R. Weingärtner, M. Bickermann, T. L. Straubinger, A. Winnacker
Mater. Sci. Eng. B 91-92 (2002) 75-78
Presentation at the 9. Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-9) by P. J. Wellmann, Rimini, Italy on Sep 25-28, 2001.
DOI: 10.1016/S0921-5107(01)00976-X
manuscript
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Incorporation of Boron and Vanadium during PVT Growth of 6H-SiC Crystals
M. Bickermann, B. M. Epelbaum, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker
J. Crystal Growth 233 (2001) 211-218
DOI: 10.1016/S0022-0248(01)01579-2
manuscript
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On the Preparation of Semi-Insulating SiC Bulk Crystals by the PVT Technique
M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, P. J. Wellmann, A. Winnacker
Appl. Surf. Sci. 184 (2001) 84-89
Poster at the European Materials Research Society Spring Meeting 2001 (Symposium F) (EMRS Spring 2001).
DOI: 10.1016/S0169-4332(01)00481-0
manuscript
poster
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SiC Crystal Growth from the Vapor and Liquid Phase
D. Hofmann, M. Bickermann, D. Ebling, B. Epelbaum, L. Kadinski, M. Selder, T. Straubinger, R. Weingaertner, P. Wellmann, A. Winnacker
Mater. Res. Soc. Symp. Proc. 640 (2001) H1.1
Invited talk at the Materials Research Society Fall Meeting 2000 (Symposium H) (MRS Fall 2000) by D. Hofmann, Boston, Massachusetts, USA on Nov 27-29, 2000.
DOI: 10.1557/PROC-640-H1.1
manuscript
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Study of Boron Incorporation during PVT growth of p-type SiC Crystals
M. Bickermann, D. Hofmann, M. Rasp, T. L. Straubinger, R. Weingärtner, P. J. Wellmann, A. Winnacker
Mater. Sci. Forum 353-356 (2001) 49-52
Poster at the European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000).
DOI: 10.4028/www.scientific.net/MSF.353-356.49
manuscript
poster
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Stability Criteria for 4H-SiC Bulk Growth
T. L. Straubinger, M. Bickermann, D. Hofmann, R. Weingärtner, P. J. Wellmann, A. Winnacker
Mater. Sci. Forum 353-356 (2001) 25-28
Poster at the European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000) by T. L. Straubinger, Kloster Banz on Sep 3-7, 2000.
DOI: 10.4028/www.scientific.net/MSF.353-356.25
manuscript
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Absorption Measurements and Doping Level Evaluation in n-type and p-type 4H-SiC and 6H-SiC
R. Weingärtner, M. Bickermann, D. Hofmann, M. Rasp, T. L. Straubinger, P. J. Wellmann, A. Winnacker
Mater. Sci. Forum 353-356 (2001) 397-400
Poster at the European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000) by R. Weingärtner, Kloster Banz on Sep 3-7, 2000.
DOI: 10.4028/www.scientific.net/MSF.353-356.397
manuscript
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Absorption Mapping of Doping Level Distribution in n-type and p-type 4H-SiC and 6H-SiC
R. Weingärtner, M. Bickermann, S. Bushevoy, D. Hofmann, M. Rasp, T. L. Straubinger, P. J. Wellmann, A. Winnacker
Mater. Sci. Eng. B 80 (2001) 357-361
Poster at the 5. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2000) by R. Weingärtner, Heraklion, Crete, Greece on May 21-24, 2000.
DOI: 10.1016/S0921-5107(00)00599-7
manuscript
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Analysis on the Formation of Filamentory and Planar Voids in Silicon Carbide Bulk Crystals
D. Hofmann, M. Bickermann, W. Hartung, A. Winnacker
Mater. Sci. Forum 338-342 (2000) 445-448
Presentation at the 8. International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM 1999) by D. Hofmann, Durham, North Carolina, USA on Oct 10-15, 1999.
DOI: 10.4028/www.scientific.net/MSF.338-342.445
manuscript
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Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non Stationary Process Conditions
T. L. Straubinger, M. Bickermann, M. Grau, D. Hofmann, L. Kadinski, S. G. Müller, M. Selder, P. J. Wellmann, A. Winnacker
Mater. Sci. Forum 338-342 (2000) 39-42
Presentation at the 8. International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM 1999) by T. L. Straubinger, Durham, North Carolina, USA on Oct 10-15, 1999.
DOI: 10.4028/www.scientific.net/MSF.338-342.39
manuscript
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Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
P. J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T. Straubinger, A. Winnacker
Mater. Sci. Forum 338-342 (2000) 71-74
Presentation at the 8. International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM 1999) by P. J. Wellmann, Durham, North Carolina, USA on Oct 10-15, 1999.
DOI: 10.4028/www.scientific.net/MSF.338-342.71
manuscript
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In-Situ Visualization and Analysis of Silicon Carbide Physical Vapor Transport Growth Using Digital X-Ray Imaging
P. J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T. Straubinger, A. Winnacker
J. Crystal Growth 216 (2000) 263-272
DOI: 10.1016/S0022-0248(00)00372-9
manuscript
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Sublimation Growth of SiC Bulk Crystals: Experimental and Theoretical Studies on Defect Formation and Growth Rate Augmentation
D. Hofmann, M. Bickermann, R. Eckstein, M. Kölbl, St. G. Müller, E. Schmitt, A. Weber, A. Winnacker
J. Crystal Growth 198/199 (1999) 1005-1010
DOI: 10.1016/S0022-0248(98)01212-3
manuscript
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Analysis on Defect Generation During the SiC Bulk Growth Process
D. Hofmann, E. Schmitt, M. Bickermann, M. Kölbl, P. J. Wellmann, A. Winnacker
Mater. Sci. Eng. B 61-62 (1999) 48-53
Presentation at the European Conference on Silicon Carbide and Related Materials 1998 (ECSCRM 1998) by D. Hofmann, Montpellier, France on Sep 2-4, 1998.
DOI: 10.1016/S0921-5107(98)00443-7
manuscript
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Online Monitoring of PVT SiC Bulk Crystal Growth Using Digital X-Ray Imaging
P. J. Wellmann, M. Bickermann, M. Grau, D. Hofmann, T. Straubinger, A. Winnacker
Mater. Res. Soc. Symp. Proc. 572 (1999) 259-264
Presentation at the Materials Research Society Spring Meeting 1999 (Symposium Y) (MRS Spring 1999) by P. J. Wellmann, San Francisco, California, USA on Apr 5-9, 1999.
DOI: 10.1557/PROC-572-259
manuscript
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Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
M. Müller, M. Bickermann, D. Hofmann, A.-D. Weber, A. Winnacker
Mater. Sci. Forum 264-268 (1998) 69-72
Poster at the 7. International Conference on Silicon Carbide and Group III Nitrides 1997 (ICSCIII-N 1997) by M. Müller, Stockholm, Sweden on Aug 31-Sep 5, 1997.
DOI: 10.4028/www.scientific.net/MSF.264-268.69
manuscript
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2023
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2022
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2021
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2020
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2019
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2018
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2017
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2016
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2015
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2014
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2013
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2012
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2011
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2010
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2009
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2008
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2007
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2006
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2005
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2004
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2003
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2002
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2001
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2000
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1999
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1998
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Matthias Bickermann
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Umar Bashir Ganie (Berlin)
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Andrea Dittmar (Berlin)
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Boris M. Epelbaum (Erlangen)
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Tobias Erlbacher (Erlangen)
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Martin Feneberg (Ulm/Magdeburg)
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Octavian Filip (Erlangen)
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Zbigniew Galazka (Berlin)
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Ivan Gamov (Berlin)
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Christo Guguschev (Berlin)
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Wei Guo (Bayreuth)
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Maki Hamada (Berlin/Kanazawa)
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Carsten Hartmann (Berlin)
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Paul Heimann (Erlangen)
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Simon J. Herr (Freiburg)
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Ziad G. Herro (Erlangen)
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Dieter Hofmann (Erlangen)
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Klaus Irmscher (Berlin)
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Krzysztof Kachel (Berlin)
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Antti Karjalainen (Helsinki)
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Detlef Klimm (Berlin)
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Iurii Kogut (Goslar)
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Frank Langhans (Berlin)
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Juan Li (Erlangen/China)
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Martin Martens (Berlin)
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Lucinda Matiwe (Berlin)
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Anna Mogilatenko (Berlin)
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Matthias Müller (Erlangen)
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Sergei B. Orlinskii (Kazan)
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Günther M. Prinz (Ulm)
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Michael Rasp (Erlangen)
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Robert Rounds (Raleigh)
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Dietmar Siche (Erlangen)
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Nguyen T. Son (Linköping)
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Thomas L. Straubinger (Erlangen/Berlin)
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Filip Tuomisto (Espoo/Helsinki)
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Sebastian Walde (Berlin)
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Roland Weingärtner (Erlangen)
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Peter J. Wellmann (Erlangen)
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Overview: Growth of AlN bulk single crystals
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Growth and characterization of AlN-based solid solutions
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Optical Characterisation and point defects in AlN single crystals
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Growth and structural quality of AlN single crystals
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Growth of AlN on SiC substrates
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Epitaxy and devices
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GaN and other nitrides
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Transparent semiconducting oxide bulk crystals
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Oxide crystals for substrate use
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Laser, optical, and other bulk crystals
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Growth of SiC bulk single crystals by physical vapor transport
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Growth and characterization of p-type and semi-insulating SiC
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SiC growth on alternate facets
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Flux growth of silicon carbide
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Electrical and optical characterization of silicon carbide
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Book chapters
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Applied Physics Express
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Applied Physics Letters
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APL Materials
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Applied Surface Science
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Crystal Growth and Design
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Crystal Research and Technology
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CrystEngComm
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ECS Journal of Solid State Science and Technology
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IEEE Photonics Letters
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Journal of Alloys and Compounds
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Journal of Applied Physics
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Journal of Crystal Growth
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Journal of Materials Research
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Journal of Physics: Condensed Matter
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Journal of Thermal Analysis and Calorimetry
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Japanese Journal of Applied Physics
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Materials Chemistry and Physics
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Materials Science & Engineering B
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Materials Science Forum
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Optical Materials Express
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Progress in Crystal Growth and Characterization of Materials
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Physica B
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Physical Review B
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Physical Review Letters
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Physica Status Solidi A
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Physica Status Solidi B
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Physica Status Solidi C
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Solid State Ionics
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Semiconductor Science and Technology
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Superlattices and Microstructures
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Thin Solid Films
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Zeitschrift für Naturforschung B