Publications and presentations of Matthias Bickermann

Generation of Continuous-Wave Laser Light at 148.4 nm using Cavity-Enhanced Second Harmonic Generation in BaMgF₄

K. Subramanian, H. Tanaka, S. J. Herr, N. K. Sah, G. Jha, F. Zacherl, S. A. Pradeep, V. Andriushkov, K. Zhang, D. Fenner, Y. Wang, M. Hugenschmidt, F. Kühnemann, G. Bonetti, S. Ui, M. Bickermann, C. Ma, X. Zheng, M. Zopf, B. Lommel, J. C. Müller, S. Hannig, D. Budker, F. Schmidt-Kaler, L. von der Wense
arXiv:2606.25046 [physics.optics] Manuskript
Understanding Structure and Structural Formation in Mg & Zr-Substituted Sr(Ga, Al)₁₂O₁₉-Crystals. A Study Combining X-ray Diffraction and DFT-Modeling

C. Rhode, F. Bietz, T.M. Gesing, C.S. Reuter, P.M. Düring, M. Müller, R. Koc, D.G. Schlom, Y.E. Li, M. Bickermann, S. Sanna, C. Guguschev

Z. Kristallogr. - Cryst. Mater. 241 (2026) 259-267
DOI: 10.1515/zkri-2026-0009 Manuskript
Bulk Rutile-GeO₂ Single Crystals and Epi-ready Wafers

Z. Galazka, S. Bin Anooz, S. Ganschow, A. Kwasniewski, U. Juda, M. Imming-Friedland, T. Wurche, A. Fiedler, T. Schroeder, M. Bickermann

Cryst. Res. Technol. 61 [1] (2026) e70072
DOI: 10.1002/crat.70072 manuscript
Structural and Optical Characterization of Highly Homogeneous Lithium Niobate Tantalate Single-Crystal Solid Solutions

U. Bashir, S. Bin Anooz, M. Schmidbauer, L.M. Eng, M. Bickermann, S. Ganschow

J. Crystal Growth 676 (2026) 128422
DOI: 10.1016/j.jcrysgro.2025.128422 manuscript
Wide Bandgap Materials for Next-Generation Power Devices: Progress on AIN and beta-Ga₂O₃ Crystal Growth and Epitaxy at IKZ

M. Schröder, Z. Galazka, T.-S. Chou, C. Hartmann, T. Straubinger, A. Popp, A. Fiedler, M. Bickermann, K. Stoltze, T. Schröder

IEEE (2025) 12th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), Fayetteville, AR, USA, 2025

Presentation by M. Schröder at the 12. Annual IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2025) in Fayetteville, Arkansas, USA on Nov 10–12, 2025.
DOI: 10.1109/WiPDA63755.2025.11303403 manuscript
Incorporation of Divalent Transition-Metal Ions in Bulk In₂O₃ Single Crystals Grown From the Melt and Their Impact on Optical and Electrical Properties

Z. Galazka, A. Fiedler, M. Pietsch, A. Kwasniewski, A. Dittmar, R. Blukis, S. Ganschow, U. Juda, T. Schroeder, M. Bickermann

J. Appl. Phys. 138 (2025) 025104
DOI: 10.1063/5.0273999 manuscript
Prediction of Impurity Concentrations by Absorption Spectra in AlN Single Crystals Using Random Forest Regression

A. Klump, C. Hartmann, M. Bickermann, T. Straubinger

CrystEngComm 27 (2025) 184-190
DOI: 10.1039/d4ce00813h manuscript
Bulk Single Crystals and Physical Properties of Rutile-GeO₂ for High Power Electronics and DUV Optoelectronics

Z. Galazka, R. Blukis, A. Fiedler, S. Bin Anooz, J. Zhang, M. Albrecht, T. Remmele, T. Schulz, D. Klimm, M. Pietsch, A. Kwasniewski, A. Dittmar, S. Ganschow, U. Juda, K. Stolze, M. Suendermann, T. Schroeder, M. Bickermann

Phys. Status Solidi B 262 (2025) 2400326

Invited talk by Z. Galazka at the 5th International Workshop on Gallium Oxide and Related Materials (IWGO-5) in Berlin on May 27–31, 2024.
DOI: 10.1002/pssb.202400326 manuscript
Solid-Solution Limits and Thorough Characterization of Bulk β-(Al_xGa_1-x)₂O₃ Single Crystals Grown by the Czochralski Method

Z. Galazka, A. Fiedler, A. Popp, P. Seyidov, S. Bin Anooz, R. Blukis, J. Rehm, K. Tetzner, M. Pietsch, A. Dittmar, S. Ganschow, T.-S. Chou, A. Kwasniewski, M. Suendermann, T. Schroeder, M. Bickermann

Adv. Mater. Interfaces 12 (2025) 2400122
DOI: 10.1002/admi.202400122 manuscript
Thermal Conductivity in Solid Solutions of Lithium Niobate Tantalate Single Crystals from 300K up to 1300K

U. Bashir, M. Rüsing, B. Koppitz, L. Eng, M. Bickermann, S. Ganschow

J. Alloys Compounds 1008 (2024) 176549
DOI: 10.1016/j.jallcom.2024.176549 manuscript
Evaluation and Thermodynamic Optimization of Phase Diagram of Lithium Niobate Tantalate Solid Solutions

U. Bashir, D. Klimm, M. Rüsing, S. Ganschow, M. Bickermann

J. Mater. Sci. 59 (2024) 12305-12316
DOI: 10.1007/s10853-024-09932-7 manuscript
Efficient Diameter Enlargement of Bulk AlN Single Crystals with High Structural Quality

C. Hartmann, M. Pinar Kabukcuoglu, C. Richter, A. Klump, D. Schulz, U. Juda, M. Bickermann, D. Hänschke, T. Schröder, T. Straubinger

Appl. Phys. Express 16 (2023) 075502
DOI: 10.35848/1882-0786/ace60e manuscript
Fanout Periodic Poling of BaMgF₄ Crystals

S.J. Herr, H. Tanaka, I. Breunig, M. Bickermann, F. Kühnemann

Opt. Mater. Express 13 [8] (2023) 2158-2164
DOI: 10.1364/OME.492170 manuscript
Solid Solutions of Lithium Niobate and Lithium Tantalate: Crystal Growth and the Ferroelectric Transition

U. Bashir, K. Böttcher, D. Klimm, S. Ganschow, F. Bernhardt, S. Sanna, M. Bickermann

Ferroelectrics 613 (2023) 250-262
DOI: 10.1080/00150193.2023.2189842 manuscript
Bulk Single Crystals and Physical Properties of β-(Al_xGa_1-x)₂O₃ (x = 0 - 0.35) Grown by the Czochralski Method

Z. Galazka, A. Fiedler, A. Popp, S. Ganschow, A. Kwasniewski, P. Seyidov, M. Pietsch, A. Dittmar, S. Bin Anooz, K. Irmscher, M. Suendermann, D. Klimm, T.-S. Chou, J. Rehm, T. Schroeder, M. Bickermann

J. Appl. Phys. 133 (2023) 035702
DOI: 10.1063/5.0131285 manuscript
Dislocation Climb in AlN Crystals Grown at Low Temperature Gradients Revealed by 3D X-Ray Imaging

T. Straubinger, C. Hartmann, M.P. Kabukcuoglu, M. Albrecht, M. Bickermann, A. Klump, S. Bode, E. Hamann, S. Haaga, M. Hurst, T. Schröder, D. Hänschke, C. Richter

Crystal Growth Des. 23 [3] (2023) 1538-1546
DOI: 10.1021/acs.cgd.2c01131 manuscript
The Thermal Conductivity Tensor of β-Ga₂O₃ from 300 to 1275 K

D. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. Bickermann

Cryst. Res. Technol. 58 [2] (2023) 2200204
DOI: 10.1002/crat.202200204 manuscript
Fingerprints of Carbon Defects in Vibrational Spectra of GaN Considering the Isotope Effect

I. Gamov, J.L. Lyons, G. Gärtner, K. Irmscher, E. Richter, M. Weyers, M.R. Wagner, M. Bickermann

Phys. Rev. B 106 (2022) 184110
DOI: 10.1103/PhysRevB.106.184110 manuscript
Wüstite (Fe_1-xO) - Thermodynamics and Crystal Growth

M. Hamada, S. Ganschow, D. Klimm, G. Serghiou, H. J. Reichmann, M. Bickermann

Z. Naturforsch. B 77 [6] (2022) 463-468
DOI: 10.1515/znb-2022-0071 manuscript
2 Inch Diameter, Highly Conducting Bulk β-Ga₂O₃ Single Crystals Grown by the Czochralski Method for High Power Switching Devices

Z. Galazka, S. Ganschow, K. Irmscher, P. Seyidov, M. Pietsch, T.-S. Chou, S. Bin Anooz, R. Grueneberg, A. Popp, A. Dittmar, A. Kwasniewski, M. Suendermann, D. Klimm, T. Straubinger, T. Schroeder, M. Bickermann

Appl. Phys. Lett. 120 (2022) 152101
DOI: 10.1063/5.0086996 manuscript
Molten Ba(OH)₂ + 10%MgO as Defect Selective Drop Etchant for Dislocation Analysis on AlN Layers

L. Matiwe, C. Hartmann, L. Cancellara, M. Bickermann, A. Klump, J. Wollweber, S. Hagedorn, M. Weyers, T. Straubinger

Phys. Status Solidi A 219 (2022) 2100707
DOI: 10.1002/pssa.202100707 manuscript
Phase Diagram Studies for the Growth of (Mg,Zr):SrGa₁₂O₁₉ Crystals

D. Klimm, B. Szczefanowicz, N. Wolff, M. Bickermann

J. Therm. Anal. Calorim. 147 (2022) 7133-7139
DOI: 10.1007/s10973-021-11050-4 manuscript
Experimental Hall Electron Mobility of Bulk Single Crystals of Transparent Semiconducting Oxides

Z. Galazka, K. Irmscher, M. Pietsch, S. Ganschow, D. Schulz, D. Klimm, I.M. Hanke, T. Schroeder, M. Bickermann

J. Mater. Res. 36 (2021) 4746-4755
DOI: 10.1557/s43578-021-00353-9 manuscript
Melt Growth and Physical Properties of Bulk LaInO₃ Single Crystals

Z. Galazka, K. Irmscher, S. Ganschow, M. Zupancic, W. Aggoune, C. Draxl, M. Albrecht, D. Klimm, A. Kwasniewski, T. Schulz, M. Pietsch, A. Dittmar, R. Grueneberg, U. Juda, R. Schewski, K. Char, H. Cho, T. Schroeder, M. Bickermann

Phys. Status Solidi A 218 (2021) 2100016
DOI: 10.1002/pssa.202100016 manuscript
Photochromism and Influence of Point Defect Charge States on Optical Absorption in Aluminum Nitride (AlN)

I. Gamov, C. Hartmann, T. Straubinger, M. Bickermann

J. Appl. Phys. 129 (2021) 113103
DOI: 10.1063/5.0044519 manuscript
Bulk Single Crystals of β-Ga₂O₃ and Ga-Based Spinels as Ultra-Wide Bandgap Transparent Semiconducting Oxides

Z. Galazka, S. Ganschow, K. Irmscher, D. Klimm, M. Albrecht, R. Schewski, M. Pietsch, T. Schulz, A. Dittmar, A. Kwasniewski, R. Grueneberg, S. Bin Anooz, A. Popp, U. Juda, I.M. Hanke, T. Schroeder, M. Bickermann

Prog. Cryst. Growth Charact. Mater. 67 (2021) 100511
DOI: 10.1016/j.pcrysgrow.2020.100511 manuscript
Ti_Sr Antisite: An Abundant Point Defect in SrTiO₃

A. Karjalainen, V. Prozheeva, I. Makkonen, C. Guguschev, T. Markurt, M. Bickermann, F. Tuomisto

J. Appl. Phys. 127 (2020) 245702
DOI: 10.1063/5.0010304 manuscript
Favourable Growth Conditions for the Preparation of Bulk AlN Single Crystals by PVT

C. Hartmann, L. Matiwe, J. Wollweber, I. Gamov, K. Irmscher, M. Bickermann, T. Straubinger

CrystEngComm 22 (2020) 1762-1768
DOI: 10.1039/c9ce01952a manuscript
Overgrowth of Nano-Pillar-Patterned Sapphire With Different Offcut Angle by Metalorganic Vapor Phase Epitaxy

S. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R. W. Martin, P. A. Shields, M. Kneissl, M. Weyers

J. Crystal Growth 531 (2020) 125343
DOI: 10.1016/j.jcrysgro.2019.125343 manuscript
Czochralski-Grown Bulk β-Ga₂O₃ Single Crystals Doped with Mono-, Di-, Tri-, and Tetravalent Ions

Z. Galazka, K. Irmscher, R. Schewski, I.M. Hanke, M. Pietsch, S. Ganschow, D. Klimm, A. Dittmar, A. Fiedler, T. Schröder, M. Bickermann

J. Crystal Growth 529 (2020) 125297
DOI: 10.1016/j.jcrysgro.2019.125297 manuscript
Bulk β-Ga₂O₃ Single Crystals Doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for Detection of Nuclear Radiation

Z. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M.E. Witkowski, M. Makowski, A.J. Wojtowicz, I.M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, T. Schröder, M. Bickermann

J. Alloys Compounds 818 (2020) 152842
DOI: 10.1016/j.jallcom.2019.152842 manuscript
REScO₃ Substrates: Purveyors of Strain Engineering

D. Klimm, C. Guguschev, S. Ganschow, M. Bickermann, D.G. Schlom

Cryst. Res. Technol. 55 [2] (2020) 1900111
DOI: 10.1002/crat.201900111 manuscript
Carbon Pair Defects in Aluminum Nitride

I. Gamov, C. Hartmann, J. Wollweber, A. Dittmar, T. Straubinger, M. Bickermann, I. Kogut, H. Fritze, K. Irmscher

J. Appl. Phys. 126 (2019) 215102
DOI: 10.1063/1.5123049 manuscript
Electromechanical Losses in Carbon- and Oxygen-Containing Bulk AlN Single Crystals

I. Kogut, C. Hartmann, I. Gamov, Y. Suhak, M. Schulz, S. Schröder, J. Wollweber, A. Dittmar, K. Irmscher, T. Straubinger, M. Bickermann, H. Fritze

Solid State Ionics 343 (2019) 115072
DOI: 10.1016/j.ssi.2019.115072 manuscript
Ultra-Wide Bandgap, Conductive and High Mobility Melt-Grown Truly Bulk ZnGa₂O₄ Single Crystals

Z. Galazka, S. Ganschow, R. Schewski, K. Irmscher, D. Klimm, A. Kwasniewski, M. Pietsch, A. Fiedler, I. Schulze-Jonack, M. Albrecht, M. Bickermann, T. Schröder

APL Materials 7 (2019) 022512
DOI: 10.1063/1.5053867 manuscript
Crystal Defect Analysis in AlN Layers Grown by MOVPE on Bulk AlN

A. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. Bickermann

J. Crystal Growth 505 (2018) 69-73
DOI: 10.1016/j.jcrysgro.2018.10.021 manuscript
Physical Vapor Transport Growth of bulk Al_1-xSc_xN Single Crystals

A. Dittmar, C. Hartmann, D. Klimm, M. Schmidbauer, J. Wollweber, M. Bickermann

J. Crystal Growth 500 (2018) 74-79
DOI: 10.1016/j.jcrysgro.2018.07.022 manuscript
The Thermal Conductivity of Single Crystalline AlN

R. Rounds, B. Sarkar, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar, R. Collazo

Appl. Phys. Express 11 (2018) 71001
DOI: 10.7567/APEX.11.071001 manuscript
The Influence of Point Defects on the Thermal Conductivity of AlN Crystals

R. Rounds, B. Sarkar, D. Alden, Q. Guo, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar, R. Collazo

J. Appl. Phys. 123 (2018) 185107
DOI: 10.1063/1.5028141 manuscript
Doping of Czochralski-Grown Bulk β-Ga₂O₃ Single Crystals with Cr, Ce and Al

Z. Galazka, S. Ganschow, A. Fiedler, R. Bertram, D. Klimm, K. Irmscher, R. Schewski, M. Pietsch, M. Albrecht, M. Bickermann

J. Crystal Growth 486 (2018) 82-90
DOI: 10.1016/j.jcrysgro.2018.01.022 manuscript
Preface: AlN and AlGaN Materials and Devices

M. Bickermann, R. Collazo, E. Monroy, P. Perlin

Phys. Status Solidi A 214 (2017) 1770155

Proceedings preface at the European Materials Research Society Fall Meeting 2016 (Symposium F) (EMRS Fall 2016) in Warsaw, Poland on Sep 19-22, 2016.
DOI: 10.1002/pssa.201770155 manuscript
Crystal Growth and Characterization of the Pyrochlore Tb₂Ti₂O₇

D. Klimm, C. Guguschev, D. J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, Maciej Neumann, A. Kwasniewski, D. G. Schlom, M. Bickermann

CrystEngComm 19 (2017) 3908-3914
DOI: 10.1039/C7CE00942A manuscript
Czochralski Growth and Characterization of Cerium Doped Calcium Scandate

C. Guguschev, J. Philippen, D. J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram, M. Bickermann

CrystEngComm 19 (2017) 2553-2560
DOI: 10.1039/C7CE00445A manuscript
Carbon Doped GaN Layers Grown by Pseudo-Halide Vapour Phase Epitaxy

D. Siche, R. Zwierz, K. Kachel, N. Jankowski, C. Nenstiel, G. Callsen, M. Bickermann, A. Hoffmann

Cryst. Res. Technol. 52 (2017) 1600364
DOI: 10.1002/crat.201600364 manuscript
Melt Growth and Properties of Bulk BaSnO₃ Single Crystals

Z. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. Bickermann

J. Phys.: Condens. Matter 29 (2017) 075701
DOI: 10.1088/1361-648X/aa50e2 manuscript
Scaling-up of Bulk β-Ga₂O₃ Single Crystals by the Czochralski Method

Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. Bickermann

ECS J. Solid State Sci. Technol. 6 (2017) Q3007-Q3011
DOI: 10.1149/2.0021702jss manuscript
Top-seeded Solution Growth of SrTiO₃ Single Crystals Virtually Free of Mosaicity

C. Guguschev, D. J. Kok, U. Juda, R. Uecker, S. Sintonen, Z. Galazka, M. Bickermann

J. Crystal Growth 468 (2017) 305-310

Invited talk by C. Guguschev at the 18. International Conference on Crystal Growth and Epitaxy (ICCGE-18) in Nagoya, Japan on Aug 7-12, 2016.
DOI: 10.1016/j.jcrysgro.2016.10.048 manuscript
Growth and Properties of Bulk AlN Substrates

M. Bickermann

in: III-Nitride Ultraviolet Emitters - Technology and applications, M. Kneissl and J. Rass (eds.), Springer Series in Materials Science 227, Springer Verlag 2016, ISBN: 978-3-319-24098-5, Chapter 2 (2016)
DOI: 10.1007/978-3-319-24100-5_2 manuscript
Preparation of Deep UV Transparent AlN Substrates with High Structural Perfection for Optoelectronic Devices

C. Hartmann, J. Wollweber, S. Sintonen, A. Dittmar, L. Kirste, S. Kollowa, K. Irmscher, M. Bickermann

CrystEngComm 18 (2016) 3488-3497
DOI: 10.1039/C6CE00622A manuscript
FTIR Exhaust Gas Analysis of GaN Pseudo-Halide Vapour Phase Growth

K. Kachel, D. Siche, S. Golka, P. Sennikov, M. Bickermann

Mater. Chem. Phys. 177 (2016) 12-18
DOI: 10.1016/j.matchemphys.2016.03.010 manuscript
Precipitates Originating from Tungsten Crucible Parts in AlN Bulk Crystals Grown by the PVT Method

F. Langhans, S. Kiefer, C. Hartmann, T. Markurt, T. Schulz, C. Guguschev, M. Naumann, S. Kollowa, A. Dittmar, J. Wollweber, M. Bickermann

Cryst. Res. Technol. 51 (2016) 129-136
DOI: 10.1002/crat.201500201 manuscript
Vapor Transport Growth of Wide Bandgap Materials

M. Bickermann, T. Paskova

in: Handbook of Crystal Growth, Second Edition, Vol 2A: Bulk Crystal Growth - Basic Technologies, P. Rudolph (ed.), Elsevier Science Ltd. 2015, ISBN: 978-0-44463-303-3, Chapter 16 (2015)
DOI: 10.1016/B978-0-444-63303-3.00016-X manuscript
MgGa₂O₄ as a New Wide Bandgap Transparent Semiconducting Oxide - Growth and Properties of Bulk Single Crystals

Z. Galazka, D. Klimm, K. Irmscher, R. Uecker, M. Pietsch, R. Bertram, M. Naumann, A. Kwasniewski, R. Schewski, M. Bickermann

Phys. Status Solidi A 212 (2015) 1455-1460
DOI: 10.1002/pssa.201431835 manuscript
Influence of Oxygen Partial Pressure on SrTiO₃ Bulk Crystal Growth from Non-stoichiometric Melts

C. Guguschev, D. J. Kok, Z. Galazka, D. Klimm, R. Uecker, R. Bertram, M. Naumann, U. Juda, A. Kwasniewski, M. Bickermann

CrystEngComm 17 (2015) 3224-3234
DOI: 10.1039/C5CE00095E manuscript
Temperature Dependent Dielectric Function and Reflectivity Spectra of Nonpolar Wurtzite AlN

M. Feneberg, M. F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, R. Goldhahn

Thin Solid Films 571 (2014) 502-505

Presentation by M. Feneberg at the 6. International Conference on Spectroscopic Ellipsometry (ICSE-VI) in Kyoto, Japan on May 26-31, 2013.
DOI: 10.1016/j.tsf.2013.10.092 manuscript
Growth, Characterization, and Properties of Bulk SnO₂ Single Crystals

Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Pietsch, R. Schewski, M. Albrecht, A. Kwasniewski, S. Ganschow, D. Schulz, C. Guguschev, R. Bertram, M. Bickermann, R. Fornari

Phys. Status Solidi A 211 (2014) 66-73
DOI: 10.1002/pssa.201330020 manuscript
On the Bulk β-Ga₂O₃ Single Crystals Grown by the Czochralski Method

Z. Galazka, K. Irmscher, R. Uecker, R. Bertram, M. Pietsch, A. Kwasniewski, M. Naumann, T. Schulz, R. Schewski, D. Klimm, M. Bickermann

J. Crystal Growth 404 (2014) 184-191
DOI: 10.1016/j.jcrysgro.2014.07.021 manuscript
A Study of the Step-flow Growth of the PVT-grown AlN Crystals by Multi-scale Modeling Method

W. Guo, J. Kundin, M. Bickermann, H. Emmerich

CrystEngComm 16 [29] (2014) 6564-6577
DOI: 10.1039/C4CE00175C manuscript
Bulk AlN Growth by Physical Vapor Transport

C. Hartmann, A. Dittmar, J. Wollweber, M. Bickermann

Semicond. Sci. Technol. 29 (2014) 084002
DOI: 10.1088/0268-1242/29/8/084002 manuscript
Performance Characteristics of UV-C AlGaN Quantum Well Lasers Grown on Sapphire and Bulk AlN Substrates

M. Martens, F. Mehnke, C. Kuhn, C. Reich, V. Kueller, A. Knauer, C. Netzel, C. Hartmann, J. Wollweber, J. Rass, T. Wernicke, M. Bickermann, M. Weyers, M. Kneissl

IEEE Photonics Lett. 26 [4] (2014) 342-345
DOI: 10.1109/LPT.2013.2293611 manuscript
Negative Spin-Exchange Splitting in the Exciton Fine Structure of AlN

M. Feneberg, M. F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, R. Goldhahn

Appl. Phys. Lett. 102 (2013) 052112
DOI: 10.1063/1.4790645 manuscript
Anisotropic Absorption and Emission of Bulk (1-100) AlN

M. Feneberg, M. F. Romero, M. Röppischer, C. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, R. Goldhahn

Phys. Rev. B 87 (2013) 235209
DOI: 10.1103/PhysRevB.87.235209 manuscript
Perpetuating Structural Perfection of Bulk AlN Single Crystals Using PVT Growth on AlN Seeds Cut from Freestanding Crystals

C. Hartmann, J. Wollweber, A. Dittmar, K. Irmscher, A. Kwasniewski, F. Langhans, T. Neugut, M. Bickermann

Jpn. J. Appl. Phys. 52 (2013) 08JA06

Presentation by C. Hartmann at the International Workshop on Nitride Semiconductors 2012 (IWN 2012) in Sapporo, Japan on Oct 15-19, 2012.
DOI: 10.7567/JJAP.52.08JA06 manuscript
Identification of a Tri-carbon Defect and its Relation to the Ultraviolet Absorption in Aluminum Nitride

K. Irmscher, C. Hartmann, C. Guguschev, M. Pietsch, J. Wollweber, M. Bickermann

J. Appl. Phys. 114 (2013) 123505
DOI: 10.1063/1.4821848 manuscript
Faceting in AlN Bulk Crystal Growth and its Impact on Optical Properties of the Crystals

M. Bickermann, B. M. Epelbaum, O. Filip, B. Tautz, P. Heimann, A. Winnacker

Phys. Status Solidi C 9 [3-4] (2012) 449-452

Presentation at the 9. International Conference on Nitride Semiconductors (ICNS-9) in Glasgow, Great Britain on July 10-15, 2011.
DOI: 10.1002/pssc.201100345 manuscript slides
Ohmic and Rectifying Contacts on Bulk AlN for Radiation Detector Applications

T. Erlbacher, M. Bickermann, B. Kallinger, E. Meissner, A. J. Bauer, L. Frey

Phys. Status Solidi C 9 [3-4] (2012) 968-971

Poster by T. Erlbacher at the 9. International Conference on Nitride Semiconductors (ICNS-9) in Glasgow, Great Britain on July 10-15, 2011.
DOI: 10.1002/pssc.201100341 manuscript
Growth of Bulk AlN Single Crystals with Low Oxygen Content Taking into Account Thermal and Kinetic Effects of Oxygen-related Gaseous Species

C. Guguschev, A. Dittmar, E. Moukhina, C. Hartmann, S. Golka, J. Wollweber, M. Bickermann, R.Fornari

J. Crystal Growth 360 (2012) 185-188
DOI: 10.1016/j.jcrysgro.2012.02.019 manuscript
Growth of AlN Bulk Crystals on SiC Seeds: Chemical Analysis and Crystal Properties

M. Bickermann, O. Filip, B.M. Epelbaum, P. Heimann, M. Feneberg, B. Neuschl, K. Thonke, E. Wedler, A. Winnacker

J. Crystal Growth 339 (2012) 13-21
DOI: 10.1016/j.jcrysgro.2011.11.043 manuscript
Structural Defects in Aluminum Nitride Bulk Crystals Visualized by Cathodoluminescence Maps

M. Bickermann, S. Schimmel, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker

Phys. Status Solidi C 8 [7-8] (2011) 2235-2238

Presentation at the International Workshop on Nitride Seminconductors 2010 (IWN 2010) in Tampa, Florida, USA on Sep 19-24, 2010.
DOI: 10.1002/pssc.201000864 manuscript slides
Thermally Stimulated Luminescence in Aluminium Nitride Crystals

M. Bickermann, S. Schuster, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker

Phys. Status Solidi C 8 [7-8] (2011) 2104-2106

Poster at the International Workshop on Nitride Seminconductors 2010 (IWN 2010) in Tampa, Florida, USA on Sep 19-24, 2010.
DOI: 10.1002/pssc.201000863 manuscript poster
Silicon in AlN: Shallow Donor and DX Behaviors

N. T. Son, M. Bickermann, E. Janzén

Phys. Status Solidi C 8 [7-8] (2011) 2167-2169

Presentation by N. T. Son at the International Workshop on Nitride Seminconductors 2010 (IWN 2010) in Tampa, Florida, USA on Sep 19-24, 2010.
DOI: 10.1002/pssc.201001030 manuscript
Effects of Growth Direction and Polarity on Bulk Aluminum Nitride Crystal Properties

O. Filip, B. M. Epelbaum, M. Bickermann, P. Heimann, A. Winnacker

J. Crystal Growth 318 (2011) 427-431

Presentation by O. Filip at the 16. International Conference on Crystal Growth (ICCG-16) in Beijing, China on Aug 16-21, 2010.
DOI: 10.1016/j.jcrysgro.2010.10.198 manuscript
Defects at Nitrogen Site in Electron-irradiated AlN

N. T. Son, A. Gali, Á. Szabó, M. Bickermann, T. Ohshima, J. Isoya, E. Janzén

Appl. Phys. Lett. 98 (2011) 242116
DOI: 10.1063/1.3600638 manuscript
Shallow Donor and DX States of Si in AlN

N. T. Son, M. Bickermann, E. Janzén

Appl. Phys. Lett. 98 (2011) 092104
DOI: 10.1063/1.3559914 manuscript
Deep-UV Transparent Bulk Single-crystalline AlN Substrates

M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, M. Feneberg, S. Nagata, A. Winnacker

Phys. Status Solidi C 7 [7-8] (2010) 1743-1745

Presentation at the 8. International Conference about Nitride Semiconductors (ICNS-8) in Jeju, Korea on Oct 18-23, 2009.
DOI: 10.1002/pssc.200983422 manuscript slides
Sublimation Growth of Bulk Crystals of AlN-Rich (AlN)_x(SiC)_1-x Solid Solutions

M. Bickermann, O. Filip, B. M. Epelbaum, P. Heimann, A. Winnacker

Phys. Status Solidi C 7 [7-8] (2010) 1746-1748

Poster at the 8. International Conference about Nitride Semiconductors (ICNS-8) in Jeju, Korea on Oct 18-23, 2009.
DOI: 10.1002/pssc.200983423 manuscript poster
UV Transparent Single-Crystalline Bulk AlN Substrates

M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker

Phys. Status Solidi C 7 [1] (2010) 21-24

Presentation at the European Materials Research Society Spring Meeting 2009 (Symposium J) (EMRS Spring 2009) in Strasbourg, France on Jun 8-12, 2009.
DOI: 10.1002/pssc.200982601 manuscript slides
Crystal Growth of Mixed AlN-SiC Bulk Crystals

O. Filip, M. Bickermann, B. M. Epelbaum, P. Heimann, A. Winnacker

J. Crystal Growth 312 [18] (2010) 2522-2526

Presentation by O. Filip at the 6. International Workshop on Bulk Nitride Semiconductors (IWBNS-VI) in Galindia, Poland on Aug 23-28, 2009.
DOI: 10.1016/j.jcrysgro.2010.04.006 manuscript
High-excitation and High-resolution Photoluminescence Spectra of Bulk AlN

M. Feneberg, R.A.R. Leute, B. Neuschl, K. Thonke, M. Bickermann

Phys. Rev. B 82 (2010) 075208
DOI: 10.1103/PhysRevB.82.075208 manuscript
Point Defect Content and Optical Transitions in Bulk Aluminum Nitride Crystals

M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker

Phys. Status Solidi B 246 (2009) 1181-1183

Presentation at the International Workshop on Nitride Seminconductors 2008 (IWN 2008) in Montreux, Switzerland on Oct 5-10, 2008.
DOI: 10.1002/pssb.200880753 manuscript slides
Seeded Growth of AlN on (0001)-plane 6H-SiC Substrates

O. Filip, B. M. Epelbaum, M. Bickermann, P. Heimann, S. Nagata, A. Winnacker

Mater. Sci. Forum 615-617 (2009) 983-986

Presentation by O. Filip at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2008) in Barcelona, Spain on Sep 8-12, 2008.
DOI: 10.4028/www.scientific.net/MSF.615-617.983 manuscript
Defects in AlN: High-frequency EPR and ENDOR Studies

S. B. Orlinskii, P. G. Baranov, A. P. Bundakova, M. Bickermann, J. Schmidt

Physica B 404 (2009) 4873-4876
DOI: 10.1016/j.physb.2009.08.239 manuscript
Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals

O. Filip, B. Epelbaum, J. Li, M. Bickermann, X. Xu, A. Winnacker

Mater. Sci. Forum 600-603 (2009) 23-26

Presentation by O. Filip at the 12. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2007) in Otsu, Kyoto, Japan on Oct 13-19, 2007.
DOI: 10.4028/www.scientific.net/MSF.600-603.23 manuscript
Structural Properties of Aluminum Nitride Bulk Single Crystals Grown by PVT

M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker

Phys. Status Solidi C 5 [6] (2008) 1502-1504

Poster at the 7. International Conference on Nitride Semiconductors (ICNS-7) in Las Vegas, Nevada, USA on Sep 16-21, 2007.
DOI: 10.1002/pssc.200778422 manuscript poster
Characterization of Bulk AlN Crystals With Positron Annihilation Spectroscopy

F. Tuomisto, J.-M. Mäki, T. Yu. Chemekova, Yu. N. Makarov, O. V. Avdeev, E. N. Mokhov, A.S. Segal, M. G. Ramm, S. Davis, G. Huminic, H. Helava, M. Bickermann, B. M. Epelbaum

J. Crystal Growth 310 (2008) 3998-4001

Presentation by F. Tuomisto at the 5. International Workshop on Bulk Nitride Semiconductors (IWBNS-V) in Salvador, Bahia, Brazil on Sep 24-28, 2007.
DOI: 10.1016/j.jcrysgro.2008.06.013 manuscript
Polarization-Dependent Below Band-Gap Optical Absorption of Aluminum Nitride Bulk Crystals

M. Bickermann, A. Münch, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker

J. Appl. Phys. 103 (2008) 073522
DOI: 10.1063/1.2903139 manuscript
Observation of the Triplet Meta-stable State of Shallow Donor Pairs in AlN Crystals with a Negative U Behavior: A High-frequency EPR/ENDOR Study

S. B. Orlinskii, J. Schmidt, P. G. Baranov, M. Bickermann, B. M. Epelbaum, A. Winnacker

Phys. Rev. Lett. 100 (2008) 256404
DOI: 10.1103/PhysRevLett.100.256404 manuscript
Defect-Selective Etching of Aluminum Nitride Single Crystals

M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata, A. Winnacker

Phys. Status Solidi C 4 [7] (2007) 2609-2612

Poster at the International Workshop on Nitride Seminconductors 2006 (IWN 2006) in Kyoto, Japan on Oct 22-27, 2006.
DOI: 10.1002/pssc.200674724 manuscript poster
Development of Natural Habit of Large Free-Nucleated AlN Single Crystals

B. M. Epelbaum, S. Nagata, M. Bickermann, P. Heimann, A. Winnacker

Phys. Status Solidi B 244 [6] (2007) 1780-1783

Presentation by B. M. Epelbaum at the International Workshop on Nitride Seminconductors 2006 (IWN 2006) in Kyoto, Japan on Oct 22-27, 2006.
DOI: 10.1002/pssb.200674835 manuscript
Initial Growth Stage in PVT Growth of AlN on SiC Substrates: Influence of Al₂O₃

P. Heimann, C. Pfeiffer, M. Bickermann, B. M. Epelbaum, S. Nagata, A. Winnacker

Phys. Status Solidi C 4 [7] (2007) 2223-2226

Poster by P. Heimann at the International Workshop on Nitride Seminconductors 2006 (IWN 2006) in Kyoto, Japan on Oct 22-27, 2006.
DOI: 10.1002/pssc.200674723 manuscript
Growth of 4H-SiC on Rhombohedral (01-14) Plane Seeds

J. Li, O. Filip, B. M. Epelbaum, X. Xu, M. Bickermann, A. Winnacker

J. Crystal Growth 308 (2007) 41-49
DOI: 10.1016/j.jcrysgro.2007.07.039 manuscript
Similarities and Differences in Sublimation Growth of SiC and AlN

B. M. Epelbaum, M. Bickermann, S. Nagata, P. Heimann, O. Filip, A. Winnacker

J. Crystal Growth 305 (2007) 317-325

Presentation by B. M. Epelbaum at the 5. International Workshop on Bulk Nitride Semiconductors (IWBNS-IV) in Makino, Shiga, Japan on Oct 16-21, 2006.
DOI: 10.1016/j.jcrysgro.2007.04.008 manuscript
Wet KOH Etching of Freestanding AlN Single Crystals

M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata, A. Winnacker

J. Crystal Growth 300 (2007) 299-307
DOI: 10.1016/j.jcrysgro.2006.12.037 manuscript
Growth and Characterization of High-quality 6H-SiC (01-15) Bulk Crystals

O. Filip, B. M. Epelbaum, M. Bickermann, A. Winnacker

Mater. Sci. Forum 556-557 (2007) 17-20

Poster by O. Filip at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2006) in Newcastle upon Tyne, Great Britain on Sep 3-7, 2006.
DOI: 10.4028/www.scientific.net/MSF.556-557.17 manuscript
Photoluminescence, Cathodoluminescence, and Reflectance Study of AlN Layers and AlN Single Crystals

G. M. Prinz, A. Ladenburger, M. Feneberg, M. Schirra, S. B. Thapa, M. Bickermann, B. Epelbaum, F. Scholz, K. Thonke, R. Sauer

Superlatt. Microstruct. 40 (2006) 513-518

Poster by G. M. Prinz at the European Materials Research Society Spring Meeting 2006 (Symposium S) (EMRS Spring 2006) in Nice, France on May 28-Jun 2, 2006.
DOI: 10.1016/j.spmi.2006.10.001 manuscript
Orientation-Dependent Properties of Aluminum Nitride Single Crystals

M. Bickermann, P. Heimann, B. M. Epelbaum

Phys. Status Solidi C 3 [6] (2006) 1902-1906

Poster at the 6. International Conference on Nitride Semiconductors (ICNS-6) in Bremen on Aug 28-Sep 2, 2005.
DOI: 10.1002/pssc.200565255 manuscript poster
The Initial Growth Stage in PVT Growth of Aluminum Nitride

P. Heimann, B. M. Epelbaum, M. Bickermann, S. Nagata, A. Winnacker

Phys. Status Solidi C 3 [6] (2006) 1575-1578

Poster by P. Heimann at the 6. International Conference on Nitride Semiconductors (ICNS-6) in Bremen on Aug 28-Sep 2, 2005.
DOI: 10.1002/pssc.200565260 manuscript
Structural Properties of AlN Crystals Grown by Physical Vapor Transport

M. Bickermann, B. M. Epelbaum, A. Winnacker

Phys. Status Solidi C 2 [7] (2005) 2044-2048

Poster at the International Workshop on Nitride Seminconductors 2004 (IWN 2004) in Pittsburgh, Pennsylvania, USA on Jul 19-23, 2004.
DOI: 10.1002/pssc.200461422 manuscript poster
Comparative Study of Initial Growth Stage in PVT Growth of AlN on SiC and on Native AlN Single-Crystalline Substrates

B. M. Epelbaum, P. Heimann, M. Bickermann, A. Winnacker

Phys. Status Solidi C 2 [7] (2005) 2070-2073

Presentation at the International Workshop on Nitride Seminconductors 2004 (IWN 2004) in Pittsburgh, Pennsylvania, USA on Jul 19-23, 2004.
DOI: 10.1002/pssc.200461472 manuscript slides
Growth and Characterization of Bulk AlN Substrates Grown by PVT

M. Bickermann, B. M. Epelbaum, M. Kazan, Z. Herro, P. Masri, A. Winnacker

Phys. Status Solidi A 202 (2005) 531-535

Presentation at the 7. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2004) in Montpellier, France on Jun 2-5, 2004.
DOI: 10.1002/pssa.200460416 manuscript slides
Investigation of (0001) Lattice Plane Bending in Large SiC Crystals Using High Energy X-ray Technique

B. M. Epelbaum, Z. G. Herro, M. Bickermann, C. Seitz, A. Magerl, P. Masri, A. Winnacker

Phys. Status Solidi C 2 [4] (2005) 1288-1291

Poster by B. M. Epelbaum at the 7. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2004) in Montpellier, France on Jun 2-5, 2004.
DOI: 10.1002/pssc.200460428 manuscript
Orientation-Dependent Phonon Observation in Single-Crystalline Aluminum Nitride

M. Bickermann, B. M. Epelbaum, P. Heimann, Z. G. Herro, A. Winnacker

Appl. Phys. Lett. 86 (2005) 131904
DOI: 10.1063/1.1894610 manuscript
LPE of Silicon Carbide Using Diluted Si-Ge Flux

O. Filip, B. Epelbaum, M. Bickermann, A. Winnacker

Mater. Sci. Forum 483-485 (2005) 133-136

Poster by O. Filip at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2004) in Bologna, Italy on Aug 31-Sep 4, 2004.
DOI: 10.4028/www.scientific.net/MSF.483-485.133 manuscript
Liquid Phase Homoepitaxial Growth of 6H-SiC on (01-15) Oriented Substrates

O. Filip, B. Epelbaum, Z. G. Herro, M. Bickermann, A. Winnacker

J. Crystal Growth 282 (2005) 286-289
DOI: 10.1016/j.jcrysgro.2005.05.013 manuscript
Growth of 6H-SiC Crystals Along the [01-15] Direction

Z. G. Herro, B. M. Epelbaum, M. Bickermann, C. Seitz, A. Magerl, A. Winnacker

J. Crystal Growth 275 (2005) 496-503
DOI: 10.1016/j.jcrysgro.2004.12.024 manuscript
Approaches to Seeded PVT Growth of AlN Crystals

B. M. Epelbaum, M. Bickermann, A. Winnacker

J. Crystal Growth 275 (2005) e479-e484

Presentation by B. M. Epelbaum at the 14. International Conference on Crystal Growth (ICCG-14) in Grenoble, France on Aug 9-13, 2004.
DOI: 10.1016/j.jcrysgro.2004.11.113 manuscript
Micropipe Healing in SiC Wafers by Liquid-Phase Epitaxy in Si-Ge Melts

O. Filip, B. Epelbaum, M. Bickermann, A. Winnacker

J. Crystal Growth 271 (2004) 142-150
DOI: 10.1016/j.jcrysgro.2004.07.040 manuscript
Characterization of Bulk AlN with Low Oxygen Content

M. Bickermann, B. M. Epelbaum, A. Winnacker

J. Crystal Growth 269 (2004) 432-442
DOI: 10.1016/j.jcrysgro.2004.05.071 manuscript
Natural Growth Habit of Bulk AlN Crystals

B. M. Epelbaum, C. Seitz, A. Magerl, M. Bickermann, A. Winnacker

J. Crystal Growth 265 (2004) 577-581
DOI: 10.1016/j.jcrysgro.2004.02.100 manuscript
Effective Increase of Single-Crystalline Yield During PVT Growth of SiC by Tailoring of Radial Temperature Gradient

Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, A. Winnacker

J. Crystal Growth 262 (2004) 105-112
DOI: 10.1016/j.jcrysgro.2003.10.060 manuscript
Structural, Optical, and Electrical Properties of Bulk AlN Crystals Grown by PVT

M. Bickermann, B. M. Epelbaum, A. Winnacker

Mater. Sci. Forum 457-460 (2004) 1541-1544

Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) in Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.1541 manuscript poster
Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance

M. Bickermann, K. Irmscher, R. Weingärtner, A. Winnacker

Mater. Sci. Forum 457-460 (2004) 787-790

Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) in Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.787 manuscript poster
Sublimation Growth of Bulk AlN crystals: Process Temperature and Growth Rate

B. M. Epelbaum, M. Bickermann, A. Winnacker

Mater. Sci. Forum 457-460 (2004) 1537-1540

Presentation by B. M. Epelbaum at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) in Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.1537 manuscript
Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C

B. M. Epelbaum, P. A. Gurzhiyants, Z. Herro, M. Bickermann, A. Winnacker

Mater. Sci. Forum 457-460 (2004) 119-122

Poster by B. M. Epelbaum at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) in Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.119 manuscript
Uniform Axial Charge Carrier Concentration in PVT-grown p-type 6H-SiC by Non-uniform Distribution of Boron in the Powder Source

Z. G. Herro, M. Bickermann, B. M. Epelbaum, R. Weingärtner, U. Künecke, A. Winnacker

Mater. Sci. Forum 457-460 (2004) 719-722

Poster by Z. G. Herro at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) in Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.719 manuscript
Effect of Thermal Field on Interface Step Structures during PVT Growth of Si-face 6H-SiC

Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, A. Winnacker

Mater. Sci. Forum 457-460 (2004) 95-98

Poster by Z. G. Herro at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) in Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.95 manuscript
Natural Crystal Habit and Preferential Growth Directions in PVT of Silicon Carbide

Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, C. Seitz, A. Magerl, A. Winnacker

Mater. Sci. Forum 457-460 (2004) 111-114

Poster by Z. G. Herro at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) in Lyon, France on Oct 5-10, 2003.
DOI: 10.4028/www.scientific.net/MSF.457-460.111 manuscript
AFM Investigation of Interface Step Structures On PVT-Grown of (0001)Si 6H-SiC crystals

Z. G. Herro, B. M. Epelbaum, R. Weingärtner, M. Bickermann, P. Masri, A. Winnacker

J. Crystal Growth 270 (2004) 113-120
DOI: 10.1016/j.jcrysgro.2004.05.107 manuscript
On the Preparation of Vanadium Doped PVT Grown SiC Boules with High Semi-Insulating Yield

M. Bickermann, R. Weingärtner, A. Winnacker

J. Crystal Growth 254 (2003) 390-399
DOI: 10.1016/S0022-0248(03)01179-5 manuscript
PVT Growth of Bulk AlN Crystals with Low Oxygen Contamination

M. Bickermann, B. M. Epelbaum, A. Winnacker

Phys. Status Solidi C 0 [7] (2003) 1993-1996

Presentation at the 5. International Conference on Nitride Semiconductors (ICNS-5) in Nara, Japan on May 25-30, 2003.
DOI: 10.1002/pssc.200303280 manuscript slides
Electrical and Optical Characterization of p-Type Boron Doped 6H-SiC Bulk Crystals

M. Bickermann, R. Weingärtner, Z. Herro, D. Hofmann, U. Künecke, P. J. Wellmann, A. Winnacker

Mater. Sci. Forum 433-436 (2003) 337-340

Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) in Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.337 manuscript poster
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping During PVT Bulk Crystal Growth

M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker

Mater. Sci. Forum 433-436 (2003) 51-54

Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) in Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.51 manuscript poster
Seeded PVT Growth of Aluminum Nitride on Silicon Carbide

B. M. Epelbaum, M. Bickermann, A. Winnacker

Mater. Sci. Forum 433-436 (2003) 983-986

Poster by B. M. Epelbaum at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) in Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.983 manuscript
Effective Increase of Single-Crystalline Yield During PVT Growth of SiC by Tailoring of Radial Temperature Gradient

Z. Herro, M. Bickermann, B. M. Epelbaum, P. Masri, A. Winnacker

Mater. Sci. Forum 433-436 (2003) 67-70

Poster by Z. Herro at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) in Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.67 manuscript
PVT Growth of Co-Doped Semi-Insulating 2 inch 6H-SiC Crystals

M. Rasp, Th. L. Straubinger, E. Schmitt, M. Bickermann, S. Reshanov, H. Sadowski

Mater. Sci. Forum 433-436 (2003) 55-58

Poster by M. Rasp at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) in Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.55 manuscript
Impact of Compensation on Optical Absorption Bands in the Below Band Gap Region in n-type (N) 6H-SiC

R. Weingärtner, M. Bickermann, Z. Herro, U. Künecke, S. A. Sakwe, P. J. Wellmann, A. Winnacker

Mater. Sci. Forum 433-436 (2003) 333-336

Poster by R. Weingärtner at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) in Linköping, Sweden on Sep 1-5, 2002.
DOI: 10.4028/www.scientific.net/MSF.433-436.333 manuscript
Aluminum p-type Doping of Silicon Carbide Crystals Using a Modified Physical Vapor Transport Growth Method

T. L. Straubinger, M. Bickermann, R. Weingärtner, P. J. Wellmann, A. Winnacker

J. Crystal Growth 240 (2002) 117-123
DOI: 10.1016/S0022-0248(02)00917-X manuscript
On the Preparation of Vanadium-Doped Semi-insulating SiC Bulk Crystals

M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker

Mater. Sci. Forum 389-393 (2002) 139-142

Presentation at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001) in Tsukuba, Japan on Oct 28-Nov 2, 2001.
DOI: 10.4028/www.scientific.net/MSF.389-393.139 manuscript slides
Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth

M. Bickermann, R. Weingärtner, D. Hofmann, T. L. Straubinger, A. Winnacker

Mater. Sci. Forum 389-393 (2002) 127-130

Poster at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001) in Tsukuba, Japan on Oct 28-Nov 2, 2001.
DOI: 10.4028/www.scientific.net/MSF.389-393.127 manuscript poster
Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality

B. M. Epelbaum, D. Hofmann, M. Bickermann, A. Winnacker

Mater. Sci. Forum 389-393 (2002) 1445-1448

Presentation at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001) in Tsukuba, Japan on Oct 28-Nov 2, 2001.
DOI: 10.4028/www.scientific.net/MSF.389-393.1445 manuscript slides
Aluminum Doping of 6H and 4H SiC with a Modified PVT Growth Method

T. L. Straubinger, M. Bickermann, M. Rasp, R. Weingärtner, P. J. Wellmann, A. Winnacker

Mater. Sci. Forum 389-393 (2002) 131-134

Poster by T. L. Straubinger at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001) in Tsukuba, Japan on Oct 28-Nov 2, 2001.
DOI: 10.4028/www.scientific.net/MSF.389-393.131 manuscript
Determination of Charge Carrier Concentration in n- and p-Doped SiC Based on Optical Absorption Measurements

R. Weingärtner, P. J. Wellmann, M. Bickermann, D. Hofmann, T. L. Straubinger, A. Winnacker

Appl. Phys. Lett. 80 (2002) 70-72
DOI: 10.1063/1.1430262 manuscript
Optical Quantitative Determination of Doping Levels and their Distribution in SiC

P. J. Wellmann, R. Weingärtner, M. Bickermann, T. L. Straubinger, A. Winnacker

Mater. Sci. Eng. B 91-92 (2002) 75-78

Presentation by P. J. Wellmann at the 9. Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-9) in Rimini, Italy on Sep 25-28, 2001.
DOI: 10.1016/S0921-5107(01)00976-X manuscript
Incorporation of Boron and Vanadium during PVT Growth of 6H-SiC Crystals

M. Bickermann, B. M. Epelbaum, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker

J. Crystal Growth 233 (2001) 211-218
DOI: 10.1016/S0022-0248(01)01579-2 manuscript
On the Preparation of Semi-Insulating SiC Bulk Crystals by the PVT Technique

M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, P. J. Wellmann, A. Winnacker

Appl. Surf. Sci. 184 (2001) 84-89

Poster at the European Materials Research Society Spring Meeting 2001 (Symposium F) (EMRS Spring 2001) in Strasbourg, France on Jun 5-8, 2001.
DOI: 10.1016/S0169-4332(01)00481-0 manuscript poster
SiC Crystal Growth from the Vapor and Liquid Phase

D. Hofmann, M. Bickermann, D. Ebling, B. Epelbaum, L. Kadinski, M. Selder, T. Straubinger, R. Weingaertner, P. Wellmann, A. Winnacker

Mater. Res. Soc. Symp. Proc. 640 (2001) H1.1

Invited talk by D. Hofmann at the Materials Research Society Fall Meeting 2000 (Symposium H) (MRS Fall 2000) in Boston, Massachusetts, USA on Nov 27-29, 2000.
DOI: 10.1557/PROC-640-H1.1 manuscript
Study of Boron Incorporation during PVT growth of p-type SiC Crystals

M. Bickermann, D. Hofmann, M. Rasp, T. L. Straubinger, R. Weingärtner, P. J. Wellmann, A. Winnacker

Mater. Sci. Forum 353-356 (2001) 49-52

Poster at the European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000) in Kloster Banz on Sep 3-7, 2000.
DOI: 10.4028/www.scientific.net/MSF.353-356.49 manuscript poster
Stability Criteria for 4H-SiC Bulk Growth

T. L. Straubinger, M. Bickermann, D. Hofmann, R. Weingärtner, P. J. Wellmann, A. Winnacker

Mater. Sci. Forum 353-356 (2001) 25-28

Poster by T. L. Straubinger at the European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000) in Kloster Banz on Sep 3-7, 2000.
DOI: 10.4028/www.scientific.net/MSF.353-356.25 manuscript
Absorption Measurements and Doping Level Evaluation in n-type and p-type 4H-SiC and 6H-SiC

R. Weingärtner, M. Bickermann, D. Hofmann, M. Rasp, T. L. Straubinger, P. J. Wellmann, A. Winnacker

Mater. Sci. Forum 353-356 (2001) 397-400

Poster by R. Weingärtner at the European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000) in Kloster Banz on Sep 3-7, 2000.
DOI: 10.4028/www.scientific.net/MSF.353-356.397 manuscript
Absorption Mapping of Doping Level Distribution in n-type and p-type 4H-SiC and 6H-SiC

R. Weingärtner, M. Bickermann, S. Bushevoy, D. Hofmann, M. Rasp, T. L. Straubinger, P. J. Wellmann, A. Winnacker

Mater. Sci. Eng. B 80 (2001) 357-361

Poster by R. Weingärtner at the 5. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2000) in Heraklion, Crete, Greece on May 21-24, 2000.
DOI: 10.1016/S0921-5107(00)00599-7 manuscript
Analysis on the Formation of Filamentory and Planar Voids in Silicon Carbide Bulk Crystals

D. Hofmann, M. Bickermann, W. Hartung, A. Winnacker

Mater. Sci. Forum 338-342 (2000) 445-448

Presentation by D. Hofmann at the 8. International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM 1999) in Durham, North Carolina, USA on Oct 10-15, 1999.
DOI: 10.4028/www.scientific.net/MSF.338-342.445 manuscript
Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non Stationary Process Conditions

T. L. Straubinger, M. Bickermann, M. Grau, D. Hofmann, L. Kadinski, S. G. Müller, M. Selder, P. J. Wellmann, A. Winnacker

Mater. Sci. Forum 338-342 (2000) 39-42

Presentation by T. L. Straubinger at the 8. International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM 1999) in Durham, North Carolina, USA on Oct 10-15, 1999.
DOI: 10.4028/www.scientific.net/MSF.338-342.39 manuscript
Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation

P. J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T. Straubinger, A. Winnacker

Mater. Sci. Forum 338-342 (2000) 71-74

Presentation by P. J. Wellmann at the 8. International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM 1999) in Durham, North Carolina, USA on Oct 10-15, 1999.
DOI: 10.4028/www.scientific.net/MSF.338-342.71 manuscript
In-Situ Visualization and Analysis of Silicon Carbide Physical Vapor Transport Growth Using Digital X-Ray Imaging

P. J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T. Straubinger, A. Winnacker

J. Crystal Growth 216 (2000) 263-272
DOI: 10.1016/S0022-0248(00)00372-9 manuscript
Sublimation Growth of SiC Bulk Crystals: Experimental and Theoretical Studies on Defect Formation and Growth Rate Augmentation

D. Hofmann, M. Bickermann, R. Eckstein, M. Kölbl, St. G. Müller, E. Schmitt, A. Weber, A. Winnacker

J. Crystal Growth 198/199 (1999) 1005-1010
DOI: 10.1016/S0022-0248(98)01212-3 manuscript
Analysis on Defect Generation During the SiC Bulk Growth Process

D. Hofmann, E. Schmitt, M. Bickermann, M. Kölbl, P. J. Wellmann, A. Winnacker

Mater. Sci. Eng. B 61-62 (1999) 48-53

Presentation by D. Hofmann at the European Conference on Silicon Carbide and Related Materials 1998 (ECSCRM 1998) in Montpellier, France on Sep 2-4, 1998.
DOI: 10.1016/S0921-5107(98)00443-7 manuscript
Online Monitoring of PVT SiC Bulk Crystal Growth Using Digital X-Ray Imaging

P. J. Wellmann, M. Bickermann, M. Grau, D. Hofmann, T. Straubinger, A. Winnacker

Mater. Res. Soc. Symp. Proc. 572 (1999) 259-264

Presentation by P. J. Wellmann at the Materials Research Society Spring Meeting 1999 (Symposium Y) (MRS Spring 1999) in San Francisco, California, USA on Apr 5-9, 1999.
DOI: 10.1557/PROC-572-259 manuscript
Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth

M. Müller, M. Bickermann, D. Hofmann, A.-D. Weber, A. Winnacker

Mater. Sci. Forum 264-268 (1998) 69-72

Poster by M. Müller at the 7. International Conference on Silicon Carbide and Group III Nitrides 1997 (ICSCIII-N 1997) in Stockholm, Sweden on Aug 31-Sep 5, 1997.
DOI: 10.4028/www.scientific.net/MSF.264-268.69 manuscript
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Matthias Bickermann
Umar Bashir Ganie (Berlin)
Andrea Dittmar (Berlin)
Boris M. Epelbaum (Erlangen)
Tobias Erlbacher (Erlangen)
Martin Feneberg (Ulm/Magdeburg)
Octavian Filip (Erlangen)
Zbigniew Galazka (Berlin)
Ivan Gamov (Berlin)
Christo Guguschev (Berlin)
Wei Guo (Bayreuth)
Maki Hamada (Berlin/Kanazawa)
Carsten Hartmann (Berlin)
Paul Heimann (Erlangen)
Ziad G. Herro (Erlangen)
Simon J. Herr (Freiburg)
Dieter Hofmann (Erlangen)
Klaus Irmscher (Berlin)
Krzysztof Kachel (Berlin)
Antti Karjalainen (Helsinki)
Detlef Klimm (Berlin)
Andrew Klump (Berlin)
Iurii Kogut (Goslar)
Frank Langhans (Berlin)
Juan Li (Erlangen/China)
Martin Martens (Berlin)
Lucinda Matiwe (Berlin)
Anna Mogilatenko (Berlin)
Matthias Müller (Erlangen)
Sergei B. Orlinskii (Kazan)
Günther M. Prinz (Ulm)
Michael Rasp (Erlangen)
Christian Rhode (Berlin)
Robert Rounds (Raleigh)
Maike Schröder (Berlin)
Dietmar Siche (Erlangen)
Nguyen T. Son (Linköping)
Thomas L. Straubinger (Erlangen/Berlin)
Keerthan Subramanian (Mainz)
Filip Tuomisto (Espoo/Helsinki)
Sebastian Walde (Berlin)
Roland Weingärtner (Erlangen)
Peter J. Wellmann (Erlangen)
Overview: Growth of AlN bulk single crystals
Growth and characterization of AlN-based solid solutions
Optical Characterisation and point defects in AlN single crystals
Growth and structural quality of AlN single crystals
Growth of AlN on SiC substrates
Epitaxy and devices
GaN and other nitrides
Transparent semiconducting oxide bulk crystals
Oxide crystals for substrate use
Laser, optical, and other bulk crystals
Growth of SiC bulk single crystals by physical vapor transport
Growth and characterization of p-type and semi-insulating SiC
SiC growth on alternate facets
Flux growth of silicon carbide
Electrical and optical characterization of silicon carbide
Book chapters
Advanced Materials Interfaces
Applied Physics Express
Applied Physics Letters
APL Materials
Applied Surface Science
Crystal Growth and Design
Crystal Research and Technology
CrystEngComm
Ferroelectrics
ECS Journal of Solid State Science and Technology
IEEE Xplore
IEEE Photonics Letters
Journal of Alloys and Compounds
Journal of Applied Physics
Journal of Crystal Growth
Journal of Materials Research
Journal of Materials Science
Journal of Physics: Condensed Matter
Journal of Thermal Analysis and Calorimetry
Japanese Journal of Applied Physics
Materials Chemistry and Physics
Materials Research Society Symposium Proceedings
Materials Science & Engineering B
Materials Science Forum
arXiv preprint
Optical Materials Express
Progress in Crystal Growth and Characterization of Materials
Physica B
Physical Review B
Physical Review Letters
Physica Status Solidi A
Physica Status Solidi B
Physica Status Solidi C
Solid State Ionics
Semiconductor Science and Technology
Superlattices and Microstructures
Thin Solid Films
Zeitschrift für Kristallographie - Crystalline Materials
Zeitschrift für Naturforschung B

2026

2025

2024

2023

2022

2021

2020

2019

2018

2017

2016

2015

2014

2013

2012

2011

2010

2009

2008

2007

2006

2005

2004

2003

2002

2001

2000

1999

1998

Matthias Bickermann

Umar Bashir Ganie (Berlin)

Andrea Dittmar (Berlin)

Boris M. Epelbaum (Erlangen)

Tobias Erlbacher (Erlangen)

Martin Feneberg (Ulm/Magdeburg)

Octavian Filip (Erlangen)

Zbigniew Galazka (Berlin)

Ivan Gamov (Berlin)

Christo Guguschev (Berlin)

Wei Guo (Bayreuth)

Maki Hamada (Berlin/Kanazawa)

Carsten Hartmann (Berlin)

Paul Heimann (Erlangen)

Ziad G. Herro (Erlangen)

Simon J. Herr (Freiburg)

Dieter Hofmann (Erlangen)

Klaus Irmscher (Berlin)

Krzysztof Kachel (Berlin)

Antti Karjalainen (Helsinki)

Detlef Klimm (Berlin)

Andrew Klump (Berlin)

Iurii Kogut (Goslar)

Frank Langhans (Berlin)

Juan Li (Erlangen/China)

Martin Martens (Berlin)

Lucinda Matiwe (Berlin)

Anna Mogilatenko (Berlin)

Matthias Müller (Erlangen)

Sergei B. Orlinskii (Kazan)

Günther M. Prinz (Ulm)

Michael Rasp (Erlangen)

Christian Rhode (Berlin)

Robert Rounds (Raleigh)

Maike Schröder (Berlin)

Dietmar Siche (Erlangen)

Nguyen T. Son (Linköping)

Thomas L. Straubinger (Erlangen/Berlin)

Keerthan Subramanian (Mainz)

Filip Tuomisto (Espoo/Helsinki)

Sebastian Walde (Berlin)

Roland Weingärtner (Erlangen)

Peter J. Wellmann (Erlangen)

Overview: Growth of AlN bulk single crystals

Growth and characterization of AlN-based solid solutions

Optical Characterisation and point defects in AlN single crystals

Growth and structural quality of AlN single crystals

Growth of AlN on SiC substrates

Epitaxy and devices

GaN and other nitrides

Transparent semiconducting oxide bulk crystals