Publication databases

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0000-0003-0888-849X

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Author ID: 24450150700

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B-6470-2015

• Books and book chapters

• Herstellung von semi-isolierenden Siliziumkarbid-Einkristallen (in German)
  Dissertation (PhD thesis) of Matthias Bickermann, University of Erlangen-Nuremberg
  Shaker-Verlag, Aachen, 2002; ISBN 978-3-8322-0174-6
  Title and table of contents
• Growth and Characterization of AlN bulk crystals
  Habilitation thesis (monograph) of Matthias Bickermann, University of Erlangen-Nuremberg
  2008, unpublished
  Title and table of contents
• Vapor Transport Growth of Wide Bandgap Materials
  M. Bickermann, T. Paskova
  in: Handbook of Crystal Growth, Second Edition, Vol 2A: Bulk Crystal Growth - Basic Technologies, P. Rudolph (ed.), Elsevier Science Ltd. 2015, ISBN: 978-0-44463-303-3, Chapter 16 (2015)
  view at publisher manuscript
• Growth and Properties of Bulk AlN Substrates
  M. Bickermann
  in: III-Nitride Ultraviolet Emitters - Technology and applications, M. Kneissl and J. Rass (eds.), Springer Series in Materials Science 227, Springer Verlag 2016, ISBN: 978-3-319-24098-5, Chapter 2 (2016)
  view at publisher manuscript

• Patents and patent applications

• Verfahren zur Sublimationszüchtung von Aluminiumnitrid-Einkristallen
  Patent von Matthias Bickermann, Boris Epelbaum, Albrecht Winnacker
  veröffentlicht z.B. als DE10248964B4
  Patent im Espacenet DE10248964B4
• AlN Bulk Single Crystal, Semiconductor Device, and Process for Producing AlN Single Crystal Bulk
  Patentanmeldung von Shunro Nagata, Albrecht Winnacker, Boris M. Epelbaum, Matthias Bickermann, Octavian Filip, Paul Heimann
  veröffentlicht z.B. als WO2009119896A1 (auf Japanisch), EP2264228A1 (auf Englisch), US2011081549A1 (auf Englisch)
  Patent im Espacenet WO2009119896A1 EP2264228A1 US2011081549A1
• Method for Cutting a Single Crystal
  Patentanmeldung von Octavian Filip, Boris Epelbaum, Matthias Bickermann, Albrecht Winnacker, Paul Heimann, Ulrich Seitz
  veröffentlicht z.B. als WO2013185952A1, EP2861393A1 (auf Englisch), US2015165647A1 (auf Englisch)
  Patent im Espacenet WO2013185952A1 EP2861393A1 US2015165647A1
• Method for Growing Beta Phase of Gallium Oxide (β-Ga₂O₃) Single Crystals from the Melt Contained Within a Metal Crucible [by Controlling the Partial Pressure of Oxygen]
  Patentanmeldung von Zbigniew Galazka, Reinhard Uecker, Detlef Klimm, Matthias Bickermann
  veröffentlicht z.B. als WO2016110385A1 (auf Englisch), EP3042986B1 (auf Englisch), US11028501B2 (auf Englisch)
  Patent im Espacenet WO2016110385A1 EP3042986B1 US11028501B2
• (Sc,Y):AIN Einkristalle für Gitter-angepasste AlGaN Systeme
  Patentanmeldung von Andrea Dittmar, Carsten Hartmann, Jürgen Wollweber, Matthias Bickermann
  veröffentlicht z.B. als WO2017050532A1, EP3353338A1, US20180258551A1 (auf Englisch)
  Patent im Espacenet WO2017050532A1 EP3353338A1 US20180258551A1
• Method and Apparatus for Producing Electrically Conducting Bulk β-Ga₂O₃ Single Crystals and Electrically Conducting Bulk β-Ga₂O₃ Single Crystal
  Patent application by Zbigniew Galazka, Matthias Bickermann, Steffen Ganschow, Thomas Schröder, Walter Häckl
  published e.g. as WO2023144000A1, EP4219803A1
  view at EPO WO2023144000A1 EP4219803A1

Publications in peer-reviewed journals (incl. book chapters)

Links to the details about the publications, including conference information and different sorting possibilities are available at the detailed publication list. For copy and paste purposes, the list is also available without DOI links.

1. Efficient Diameter Enlargement of Bulk AlN Single Crystals with High Structural Quality
   C. Hartmann, M. Pinar Kabukcuoglu, C. Richter, A. Klump, D. Schulz, U. Juda, M. Bickermann, D. Hänschke, T. Schröder, T. Straubinger
   Appl. Phys. Express 16 (2023) 075502
   DOI: 10.35848/1882-0786/ace60e manuscript
2. Fanout Periodic Poling of BaMgF₄ Crystals
   S.J. Herr, H. Tanaka, I. Breunig, M. Bickermann, F. Kühnemann
   Opt. Mater. Express 13 [8] (2023) 2158-2164
   DOI: 10.1364/OME.492170 manuscript
3. Solid Solutions of Lithium Niobate and Lithium Tantalate: Crystal Growth and the Ferroelectric Transition
   U. Bashir, K. Böttcher, D. Klimm, S. Ganschow, F. Bernhardt, S. Sanna, M. Bickermann
   Ferroelectrics 613 (2023) 250-262
   DOI: 10.1080/00150193.2023.2189842 manuscript
4. Bulk Single Crystals and Physical Properties of β-(Al_xGa_1-x)₂O₃ (x = 0 - 0.35) Grown by the Czochralski Method
   Z. Galazka, A. Fiedler, A. Popp, S. Ganschow, A. Kwasniewski, P. Seyidov, M. Pietsch, A. Dittmar, S. Bin Anooz, K. Irmscher, M. Suendermann, D. Klimm, T.-S. Chou, J. Rehm, T. Schroeder, M. Bickermann
   J. Appl. Phys. 133 (2023) 035702
   DOI: 10.1063/5.0131285 manuscript
5. Dislocation Climb in AlN Crystals Grown at Low Temperature Gradients Revealed by 3D X-Ray Imaging
   T. Straubinger, C. Hartmann, M.P. Kabukcuoglu, M. Albrecht, M. Bickermann, A. Klump, S. Bode, E. Hamann, S. Haaga, M. Hurst, T. Schröder, D. Hänschke, C. Richter
   Crystal Growth Des. 23 [3] (2023) 1538-1546
   DOI: 10.1021/acs.cgd.2c01131 manuscript
6. The Thermal Conductivity Tensor of β-Ga₂O₃ from 300 to 1275 K
   D. Klimm, B. Amgalan, S. Ganschow, A. Kwasniewski, Z. Galazka, M. Bickermann
   Cryst. Res. Technol. 58 (2023) 2200204
   DOI: 10.1002/crat.202200204 manuscript
7. Fingerprints of Carbon Defects in Vibrational Spectra of GaN Considering the Isotope Effect
   I. Gamov, J.L. Lyons, G. Gärtner, K. Irmscher, E. Richter, M. Weyers, M.R. Wagner, M. Bickermann
   Phys. Rev. B 106 (2022) 184110
   DOI: 10.1103/PhysRevB.106.184110 manuscript
8. Wüstite (Fe_1-xO) - Thermodynamics and Crystal Growth
   M. Hamada, S. Ganschow, D. Klimm, G. Serghiou, H. J. Reichmann, M. Bickermann
   Z. Naturforsch. B 77 [6] (2022) 463-468
   DOI: 10.1515/znb-2022-0071 manuscript
9. 2 Inch Diameter, Highly Conducting Bulk β-Ga₂O₃ Single Crystals Grown by the Czochralski Method for High Power Switching Devices
   Z. Galazka, S. Ganschow, K. Irmscher, P. Seyidov, M. Pietsch, T.-S. Chou, S. Bin Anooz, R. Grueneberg, A. Popp, A. Dittmar, A. Kwasniewski, M. Suendermann, D. Klimm, T. Straubinger, T. Schroeder, M. Bickermann
   Appl. Phys. Lett. 120 (2022) 152101
   DOI: 10.1063/5.0086996 manuscript
10. Molten Ba(OH)₂ + 10%MgO as Defect Selective Drop Etchant for Dislocation Analysis on AlN Layers
    L. Matiwe, C. Hartmann, L. Cancellara, M. Bickermann, A. Klump, J. Wollweber, S. Hagedorn, M. Weyers, T. Straubinger
    Phys. Status Solidi A 219 (2022) 2100707
    DOI: 10.1002/pssa.202100707 manuscript
11. Phase Diagram Studies for the Growth of (Mg,Zr):SrGa₁₂O₁₉ Crystals
    D. Klimm, B. Szczefanowicz, N. Wolff, M. Bickermann
    J. Therm. Anal. Calorim. 147 (2022) 7133-7139
    DOI: 10.1007/s10973-021-11050-4 manuscript
12. Experimental Hall Electron Mobility of Bulk Single Crystals of Transparent Semiconducting Oxides
    Z. Galazka, K. Irmscher, M. Pietsch, S. Ganschow, D. Schulz, D. Klimm, I.M. Hanke, T. Schroeder, M. Bickermann
    J. Mater. Res. 36 (2021) 4746-4755
    DOI: 10.1557/s43578-021-00353-9 manuscript
13. Melt Growth and Physical Properties of Bulk LaInO₃ Single Crystals
    Z. Galazka, K. Irmscher, S. Ganschow, M. Zupancic, W. Aggoune, C. Draxl, M. Albrecht, D. Klimm, A. Kwasniewski, T. Schulz, M. Pietsch, A. Dittmar, R. Grueneberg, U. Juda, R. Schewski, K. Char, H. Cho, T. Schroeder, M. Bickermann
    Phys. Status Solidi A 218 (2021) 2100016
    DOI: 10.1002/pssa.202100016 manuscript
14. Photochromism and Influence of Point Defect Charge States on Optical Absorption in Aluminum Nitride (AlN)
    I. Gamov, C. Hartmann, T. Straubinger, M. Bickermann
    J. Appl. Phys. 129 (2021) 113103
    DOI: 10.1063/5.0044519 manuscript
15. Bulk Single Crystals of β-Ga₂O₃ and Ga-Based Spinels as Ultra-Wide Bandgap Transparent Semiconducting Oxides
    Z. Galazka, S. Ganschow, K. Irmscher, D. Klimm, M. Albrecht, R. Schewski, M. Pietsch, T. Schulz, A. Dittmar, A. Kwasniewski, R. Grueneberg, S. Bin Anooz, A. Popp, U. Juda, I.M. Hanke, T. Schroeder, M. Bickermann
    Prog. Cryst. Growth Charact. Mater. 67 (2021) 100511
    DOI: 10.1016/j.pcrysgrow.2020.100511 manuscript
16. Ti_Sr Antisite: An Abundant Point Defect in SrTiO₃
    A. Karjalainen, V. Prozheeva, I. Makkonen, C. Guguschev, T. Markurt, M. Bickermann, F. Tuomisto
    J. Appl. Phys. 127 (2020) 245702
    DOI: 10.1063/5.0010304 manuscript
17. Favourable Growth Conditions for the Preparation of Bulk AlN Single Crystals by PVT
    C. Hartmann, L. Matiwe, J. Wollweber, I. Gamov, K. Irmscher, M. Bickermann, T. Straubinger
    CrystEngComm 22 (2020) 1762-1768
    DOI: 10.1039/c9ce01952a manuscript
18. Overgrowth of Nano-Pillar-Patterned Sapphire With Different Offcut Angle by Metalorganic Vapor Phase Epitaxy
    S. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R. W. Martin, P. A. Shields, M. Kneissl, M. Weyers
    J. Crystal Growth 531 (2020) 125343
    DOI: 10.1016/j.jcrysgro.2019.125343 manuscript
19. Czochralski-Grown Bulk β-Ga₂O₃ Single Crystals Doped with Mono-, Di-, Tri-, and Tetravalent Ions
    Z. Galazka, K. Irmscher, R. Schewski, I.M. Hanke, M. Pietsch, S. Ganschow, D. Klimm, A. Dittmar, A. Fiedler, T. Schröder, M. Bickermann
    J. Crystal Growth 529 (2020) 125297
    DOI: 10.1016/j.jcrysgro.2019.125297 manuscript
20. Bulk β-Ga₂O₃ Single Crystals Doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for Detection of Nuclear Radiation
    Z. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M.E. Witkowski, M. Makowski, A.J. Wojtowicz, I.M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, T. Schröder, M. Bickermann
    J. Alloys Compounds 818 (2020) 152842
    DOI: 10.1016/j.jallcom.2019.152842 manuscript
21. REScO₃ Substrates: Purveyors of Strain Engineering
    D. Klimm, C. Guguschev, S. Ganschow, M. Bickermann, D.G. Schlom
    Cryst. Res. Technol. 55 [2] (2020) 1900111
    DOI: 10.1002/crat.201900111 manuscript
22. Carbon Pair Defects in Aluminum Nitride
    I. Gamov, C. Hartmann, J. Wollweber, A. Dittmar, T. Straubinger, M. Bickermann, I. Kogut, H. Fritze, K. Irmscher
    J. Appl. Phys. 126 (2019) 215102
    DOI: 10.1063/1.5123049 manuscript
23. Electromechanical Losses in Carbon- and Oxygen-Containing Bulk AlN Single Crystals
    I. Kogut, C. Hartmann, I. Gamov, Y. Suhak, M. Schulz, S. Schröder, J. Wollweber, A. Dittmar, K. Irmscher, T. Straubinger, M. Bickermann, H. Fritze
    Solid State Ionics 343 (2019) 115072
    DOI: 10.1016/j.ssi.2019.115072 manuscript
24. Ultra-Wide Bandgap, Conductive and High Mobility Melt-Grown Truly Bulk ZnGa₂O₄ Single Crystals
    Z. Galazka, S. Ganschow, R. Schewski, K. Irmscher, D. Klimm, A. Kwasniewski, M. Pietsch, A. Fiedler, I. Schulze-Jonack, M. Albrecht, M. Bickermann, T. Schröder
    APL Materials 7 (2019) 022512
    DOI: 10.1063/1.5053867 manuscript
25. Crystal Defect Analysis in AlN Layers Grown by MOVPE on Bulk AlN
    A. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. Bickermann
    J. Crystal Growth 505 (2018) 69-73
    DOI: 10.1016/j.jcrysgro.2018.10.021 manuscript
26. Physical Vapor Transport Growth of bulk Al_1-xSc_xN Single Crystals
    A. Dittmar, C. Hartmann, D. Klimm, M. Schmidbauer, J. Wollweber, M. Bickermann
    J. Crystal Growth 500 (2018) 74-79
    DOI: 10.1016/j.jcrysgro.2018.07.022 manuscript
27. The Thermal Conductivity of Single Crystalline AlN
    R. Rounds, B. Sarkar, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar, R. Collazo
    Appl. Phys. Express 11 (2018) 71001
    DOI: 10.7567/APEX.11.071001 manuscript
28. The Influence of Point Defects on the Thermal Conductivity of AlN Crystals
    R. Rounds, B. Sarkar, D. Alden, Q. Guo, A. Klump, C. Hartmann, T. Nagashima, R. Kirste, A. Franke, M. Bickermann, Y. Kumagai, Z. Sitar, R. Collazo
    J. Appl. Phys. 123 (2018) 185107
    DOI: 10.1063/1.5028141 manuscript
29. Doping of Czochralski-Grown Bulk β-Ga₂O₃ Single Crystals with Cr, Ce and Al
    Z. Galazka, S. Ganschow, A. Fiedler, R. Bertram, D. Klimm, K. Irmscher, R. Schewski, M. Pietsch, M. Albrecht, M. Bickermann
    J. Crystal Growth 486 (2018) 82-90
    DOI: 10.1016/j.jcrysgro.2018.01.022 manuscript
30. Preface: AlN and AlGaN Materials and Devices
    M. Bickermann, R. Collazo, E. Monroy, P. Perlin
    Phys. Status Solidi A 214 (2017) 1770155
    Proceedings preface, European Materials Research Society Fall Meeting 2016 (Symposium F) (EMRS Fall 2016).
    DOI: 10.1002/pssa.201770155 manuscript
31. Crystal Growth and Characterization of the Pyrochlore Tb₂Ti₂O₇
    D. Klimm, C. Guguschev, D. J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, Maciej Neumann, A. Kwasniewski, D. G. Schlom, M. Bickermann
    CrystEngComm 19 (2017) 3908-3914
    DOI: 10.1039/C7CE00942A manuscript
32. Czochralski Growth and Characterization of Cerium Doped Calcium Scandate
    C. Guguschev, J. Philippen, D. J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram, M. Bickermann
    CrystEngComm 19 (2017) 2553-2560
    DOI: 10.1039/C7CE00445A manuscript
33. Carbon Doped GaN Layers Grown by Pseudo-Halide Vapour Phase Epitaxy
    D. Siche, R. Zwierz, K. Kachel, N. Jankowski, C. Nenstiel, G. Callsen, M. Bickermann, A. Hoffmann
    Cryst. Res. Technol. 52 (2017) 1600364
    DOI: 10.1002/crat.201600364 manuscript
34. Melt Growth and Properties of Bulk BaSnO₃ Single Crystals
    Z. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. Bickermann
    J. Phys.: Condens. Matter 29 (2017) 075701
    DOI: 10.1088/1361-648X/aa50e2 manuscript
35. Scaling-up of Bulk β-Ga₂O₃ Single Crystals by the Czochralski Method
    Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. Bickermann
    ECS J. Solid State Sci. Technol. 6 (2017) Q3007-Q3011
    DOI: 10.1149/2.0021702jss manuscript
36. Top-seeded Solution Growth of SrTiO₃ Single Crystals Virtually Free of Mosaicity
    C. Guguschev, D. J. Kok, U. Juda, R. Uecker, S. Sintonen, Z. Galazka, M. Bickermann
    J. Crystal Growth 468 (2017) 305-310
    Invited talk at the 18. International Conference on Crystal Growth and Epitaxy (ICCGE-18) by C. Guguschev, Nagoya, Japan on Aug 7-12, 2016.
    DOI: 10.1016/j.jcrysgro.2016.10.048 manuscript
37. Growth and Properties of Bulk AlN Substrates
    M. Bickermann
    in: III-Nitride Ultraviolet Emitters - Technology and applications, M. Kneissl and J. Rass (eds.), Springer Series in Materials Science 227, Springer Verlag 2016, ISBN: 978-3-319-24098-5, Chapter 2 (2016)
    DOI: 10.1007/978-3-319-24100-5_2 manuscript
38. Preparation of Deep UV Transparent AlN Substrates with High Structural Perfection for Optoelectronic Devices
    C. Hartmann, J. Wollweber, S. Sintonen, A. Dittmar, L. Kirste, S. Kollowa, K. Irmscher, M. Bickermann
    CrystEngComm 18 (2016) 3488-3497
    DOI: 10.1039/C6CE00622A manuscript
39. FTIR Exhaust Gas Analysis of GaN Pseudo-Halide Vapour Phase Growth
    K. Kachel, D. Siche, S. Golka, P. Sennikov, M. Bickermann
    Mater. Chem. Phys. 177 (2016) 12-18
    DOI: 10.1016/j.matchemphys.2016.03.010 manuscript
40. Precipitates Originating from Tungsten Crucible Parts in AlN Bulk Crystals Grown by the PVT Method
    F. Langhans, S. Kiefer, C. Hartmann, T. Markurt, T. Schulz, C. Guguschev, M. Naumann, S. Kollowa, A. Dittmar, J. Wollweber, M. Bickermann
    Cryst. Res. Technol. 51 (2016) 129-136
    DOI: 10.1002/crat.201500201 manuscript
41. Vapor Transport Growth of Wide Bandgap Materials
    M. Bickermann, T. Paskova
    in: Handbook of Crystal Growth, Second Edition, Vol 2A: Bulk Crystal Growth - Basic Technologies, P. Rudolph (ed.), Elsevier Science Ltd. 2015, ISBN: 978-0-44463-303-3, Chapter 16 (2015)
    DOI: 10.1016/B978-0-444-63303-3.00016-X manuscript
42. MgGa₂O₄ as a New Wide Bandgap Transparent Semiconducting Oxide - Growth and Properties of Bulk Single Crystals
    Z. Galazka, D. Klimm, K. Irmscher, R. Uecker, M. Pietsch, R. Bertram, M. Naumann, A. Kwasniewski, R. Schewski, M. Bickermann
    Phys. Status Solidi A 212 (2015) 1455-1460
    DOI: 10.1002/pssa.201431835 manuscript
43. Influence of Oxygen Partial Pressure on SrTiO₃ Bulk Crystal Growth from Non-stoichiometric Melts
    C. Guguschev, D. J. Kok, Z. Galazka, D. Klimm, R. Uecker, R. Bertram, M. Naumann, U. Juda, A. Kwasniewski, M. Bickermann
    CrystEngComm 17 (2015) 3224-3234
    DOI: 10.1039/C5CE00095E manuscript
44. Temperature Dependent Dielectric Function and Reflectivity Spectra of Nonpolar Wurtzite AlN
    M. Feneberg, M. F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, R. Goldhahn
    Thin Solid Films 571 (2014) 502-505
    Presentation at the 6. International Conference on Spectroscopic Ellipsometry (ICSE-VI) by M. Feneberg, Kyoto, Japan on May 26-31, 2013.
    DOI: 10.1016/j.tsf.2013.10.092 manuscript
45. Growth, Characterization, and Properties of Bulk SnO₂ Single Crystals
    Z. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Pietsch, R. Schewski, M. Albrecht, A. Kwasniewski, S. Ganschow, D. Schulz, C. Guguschev, R. Bertram, M. Bickermann, R. Fornari
    Phys. Status Solidi A 211 (2014) 66-73
    DOI: 10.1002/pssa.201330020 manuscript
46. On the Bulk β-Ga₂O₃ Single Crystals Grown by the Czochralski Method
    Z. Galazka, K. Irmscher, R. Uecker, R. Bertram, M. Pietsch, A. Kwasniewski, M. Naumann, T. Schulz, R. Schewski, D. Klimm, M. Bickermann
    J. Crystal Growth 404 (2014) 184-191
    DOI: 10.1016/j.jcrysgro.2014.07.021 manuscript
47. A Study of the Step-flow Growth of the PVT-grown AlN Crystals by Multi-scale Modeling Method
    W. Guo, J. Kundin, M. Bickermann, H. Emmerich
    CrystEngComm 16 [29] (2014) 6564-6577
    DOI: 10.1039/C4CE00175C manuscript
48. Bulk AlN Growth by Physical Vapor Transport
    C. Hartmann, A. Dittmar, J. Wollweber, M. Bickermann
    Semicond. Sci. Technol. 29 (2014) 084002
    DOI: 10.1088/0268-1242/29/8/084002 manuscript
49. Performance Characteristics of UV-C AlGaN Quantum Well Lasers Grown on Sapphire and Bulk AlN Substrates
    M. Martens, F. Mehnke, C. Kuhn, C. Reich, V. Kueller, A. Knauer, C. Netzel, C. Hartmann, J. Wollweber, J. Rass, T. Wernicke, M. Bickermann, M. Weyers, M. Kneissl
    IEEE Photonics Lett. 26 [4] (2014) 342-345
    DOI: 10.1109/LPT.2013.2293611 manuscript
50. Negative Spin-Exchange Splitting in the Exciton Fine Structure of AlN
    M. Feneberg, M. F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, R. Goldhahn
    Appl. Phys. Lett. 102 (2013) 052112
    DOI: 10.1063/1.4790645 manuscript
51. Anisotropic Absorption and Emission of Bulk (1-100) AlN
    M. Feneberg, M. F. Romero, M. Röppischer, C. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, R. Goldhahn
    Phys. Rev. B 87 (2013) 235209
    DOI: 10.1103/PhysRevB.87.235209 manuscript
52. Perpetuating Structural Perfection of Bulk AlN Single Crystals Using PVT Growth on AlN Seeds Cut from Freestanding Crystals
    C. Hartmann, J. Wollweber, A. Dittmar, K. Irmscher, A. Kwasniewski, F. Langhans, T. Neugut, M. Bickermann
    Jpn. J. Appl. Phys. 52 (2013) 08JA06
    Presentation at the International Workshop on Nitride Semiconductors 2012 (IWN 2012) by C. Hartmann, Sapporo, Japan on Oct 15-19, 2012.
    DOI: 10.7567/JJAP.52.08JA06 manuscript
53. Identification of a Tri-carbon Defect and its Relation to the Ultraviolet Absorption in Aluminum Nitride
    K. Irmscher, C. Hartmann, C. Guguschev, M. Pietsch, J. Wollweber, M. Bickermann
    J. Appl. Phys. 114 (2013) 123505
    DOI: 10.1063/1.4821848 manuscript
54. Faceting in AlN Bulk Crystal Growth and its Impact on Optical Properties of the Crystals
    M. Bickermann, B. M. Epelbaum, O. Filip, B. Tautz, P. Heimann, A. Winnacker
    Phys. Status Solidi C 9 [3-4] (2012) 449-452
    Presentation at the 9. International Conference on Nitride Semiconductors (ICNS-9).
    DOI: 10.1002/pssc.201100345 manuscript slides
55. Ohmic and Rectifying Contacts on Bulk AlN for Radiation Detector Applications
    T. Erlbacher, M. Bickermann, B. Kallinger, E. Meissner, A. J. Bauer, L. Frey
    Phys. Status Solidi C 9 [3-4] (2012) 968-971
    Poster at the 9. International Conference on Nitride Semiconductors (ICNS-9) by T. Erlbacher, Glasgow, Great Britain on July 10-15, 2011.
    DOI: 10.1002/pssc.201100341 manuscript
56. Growth of Bulk AlN Single Crystals with Low Oxygen Content Taking into Account Thermal and Kinetic Effects of Oxygen-related Gaseous Species
    C. Guguschev, A. Dittmar, E. Moukhina, C. Hartmann, S. Golka, J. Wollweber, M. Bickermann, R.Fornari
    J. Crystal Growth 360 (2012) 185-188
    DOI: 10.1016/j.jcrysgro.2012.02.019 manuscript
57. Growth of AlN Bulk Crystals on SiC Seeds: Chemical Analysis and Crystal Properties
    M. Bickermann, O. Filip, B.M. Epelbaum, P. Heimann, M. Feneberg, B. Neuschl, K. Thonke, E. Wedler, A. Winnacker
    J. Crystal Growth 339 (2012) 13-21
    DOI: 10.1016/j.jcrysgro.2011.11.043 manuscript
58. Structural Defects in Aluminum Nitride Bulk Crystals Visualized by Cathodoluminescence Maps
    M. Bickermann, S. Schimmel, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
    Phys. Status Solidi C 8 [7-8] (2011) 2235-2238
    Presentation at the International Workshop on Nitride Seminconductors 2010 (IWN 2010).
    DOI: 10.1002/pssc.201000864 manuscript slides
59. Thermally Stimulated Luminescence in Aluminium Nitride Crystals
    M. Bickermann, S. Schuster, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
    Phys. Status Solidi C 8 [7-8] (2011) 2104-2106
    Poster at the International Workshop on Nitride Seminconductors 2010 (IWN 2010).
    DOI: 10.1002/pssc.201000863 manuscript poster
60. Silicon in AlN: Shallow Donor and DX Behaviors
    N. T. Son, M. Bickermann, E. Janzén
    Phys. Status Solidi C 8 [7-8] (2011) 2167-2169
    Presentation at the International Workshop on Nitride Seminconductors 2010 (IWN 2010) by N. T. Son, Tampa, Florida, USA on Sep 19-24, 2010.
    DOI: 10.1002/pssc.201001030 manuscript
61. Effects of Growth Direction and Polarity on Bulk Aluminum Nitride Crystal Properties
    O. Filip, B. M. Epelbaum, M. Bickermann, P. Heimann, A. Winnacker
    J. Crystal Growth 318 (2011) 427-431
    Presentation at the 16. International Conference on Crystal Growth (ICCG-16) by O. Filip, Beijing, China on Aug 16-21, 2010.
    DOI: 10.1016/j.jcrysgro.2010.10.198 manuscript
62. Defects at Nitrogen Site in Electron-irradiated AlN
    N. T. Son, A. Gali, Á. Szabó, M. Bickermann, T. Ohshima, J. Isoya, E. Janzén
    Appl. Phys. Lett. 98 (2011) 242116
    DOI: 10.1063/1.3600638 manuscript
63. Shallow Donor and DX States of Si in AlN
    N. T. Son, M. Bickermann, E. Janzén
    Appl. Phys. Lett. 98 (2011) 092104
    DOI: 10.1063/1.3559914 manuscript
64. Deep-UV Transparent Bulk Single-crystalline AlN Substrates
    M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, M. Feneberg, S. Nagata, A. Winnacker
    Phys. Status Solidi C 7 [7-8] (2010) 1743-1745
    Presentation at the 8. International Conference about Nitride Semiconductors (ICNS-8).
    DOI: 10.1002/pssc.200983422 manuscript slides
65. Sublimation Growth of Bulk Crystals of AlN-Rich (AlN)_x(SiC)_1-x Solid Solutions
    M. Bickermann, O. Filip, B. M. Epelbaum, P. Heimann, A. Winnacker
    Phys. Status Solidi C 7 [7-8] (2010) 1746-1748
    Poster at the 8. International Conference about Nitride Semiconductors (ICNS-8).
    DOI: 10.1002/pssc.200983423 manuscript poster
66. UV Transparent Single-Crystalline Bulk AlN Substrates
    M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
    Phys. Status Solidi C 7 [1] (2010) 21-24
    Presentation at the European Materials Research Society Spring Meeting 2009 (Symposium J) (EMRS Spring 2009).
    DOI: 10.1002/pssc.200982601 manuscript slides
67. Crystal Growth of Mixed AlN-SiC Bulk Crystals
    O. Filip, M. Bickermann, B. M. Epelbaum, P. Heimann, A. Winnacker
    J. Crystal Growth 312 [18] (2010) 2522-2526
    Presentation at the 6. International Workshop on Bulk Nitride Semiconductors (IWBNS-VI) by O. Filip, Galindia, Poland on Aug 23-28, 2009.
    DOI: 10.1016/j.jcrysgro.2010.04.006 manuscript
68. High-excitation and High-resolution Photoluminescence Spectra of Bulk AlN
    M. Feneberg, R.A.R. Leute, B. Neuschl, K. Thonke, M. Bickermann
    Phys. Rev. B 82 (2010) 075208
    DOI: 10.1103/PhysRevB.82.075208 manuscript
69. Point Defect Content and Optical Transitions in Bulk Aluminum Nitride Crystals
    M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
    Phys. Status Solidi B 246 (2009) 1181-1183
    Presentation at the International Workshop on Nitride Seminconductors 2008 (IWN 2008).
    DOI: 10.1002/pssb.200880753 manuscript slides
70. Seeded Growth of AlN on (0001)-plane 6H-SiC Substrates
    O. Filip, B. M. Epelbaum, M. Bickermann, P. Heimann, S. Nagata, A. Winnacker
    Mater. Sci. Forum 615-617 (2009) 983-986
    Presentation at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2008) by O. Filip, Barcelona, Spain on Sep 8-12, 2008.
    DOI: 10.4028/www.scientific.net/MSF.615-617.983 manuscript
71. Defects in AlN: High-frequency EPR and ENDOR Studies
    S. B. Orlinskii, P. G. Baranov, A. P. Bundakova, M. Bickermann, J. Schmidt
    Physica B 404 (2009) 4873-4876
    DOI: 10.1016/j.physb.2009.08.239 manuscript
72. Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
    O. Filip, B. Epelbaum, J. Li, M. Bickermann, X. Xu, A. Winnacker
    Mater. Sci. Forum 600-603 (2009) 23-26
    Presentation at the 12. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2007) by O. Filip, Otsu, Kyoto, Japan on Oct 13-19, 2007.
    DOI: 10.4028/www.scientific.net/MSF.600-603.23 manuscript
73. Structural Properties of Aluminum Nitride Bulk Single Crystals Grown by PVT
    M. Bickermann, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
    Phys. Status Solidi C 5 [6] (2008) 1502-1504
    Poster at the 7. International Conference on Nitride Semiconductors (ICNS-7).
    DOI: 10.1002/pssc.200778422 manuscript poster
74. Characterization of Bulk AlN Crystals With Positron Annihilation Spectroscopy
    F. Tuomisto, J.-M. Mäki, T. Yu. Chemekova, Yu. N. Makarov, O. V. Avdeev, E. N. Mokhov, A.S. Segal, M. G. Ramm, S. Davis, G. Huminic, H. Helava, M. Bickermann, B. M. Epelbaum
    J. Crystal Growth 310 (2008) 3998-4001
    Presentation at the 5. International Workshop on Bulk Nitride Semiconductors (IWBNS-V) by F. Tuomisto, Salvador, Bahia, Brazil on Sep 24-28, 2007.
    DOI: 10.1016/j.jcrysgro.2008.06.013 manuscript
75. Polarization-Dependent Below Band-Gap Optical Absorption of Aluminum Nitride Bulk Crystals
    M. Bickermann, A. Münch, B. M. Epelbaum, O. Filip, P. Heimann, S. Nagata, A. Winnacker
    J. Appl. Phys. 103 (2008) 073522
    DOI: 10.1063/1.2903139 manuscript
76. Observation of the Triplet Meta-stable State of Shallow Donor Pairs in AlN Crystals with a Negative U Behavior: A High-frequency EPR/ENDOR Study
    S. B. Orlinskii, J. Schmidt, P. G. Baranov, M. Bickermann, B. M. Epelbaum, A. Winnacker
    Phys. Rev. Lett. 100 (2008) 256404
    DOI: 10.1103/PhysRevLett.100.256404 manuscript
77. Defect-Selective Etching of Aluminum Nitride Single Crystals
    M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata, A. Winnacker
    Phys. Status Solidi C 4 [7] (2007) 2609-2612
    Poster at the International Workshop on Nitride Seminconductors 2006 (IWN 2006).
    DOI: 10.1002/pssc.200674724 manuscript poster
78. Development of Natural Habit of Large Free-Nucleated AlN Single Crystals
    B. M. Epelbaum, S. Nagata, M. Bickermann, P. Heimann, A. Winnacker
    Phys. Status Solidi B 244 [6] (2007) 1780-1783
    Presentation at the International Workshop on Nitride Seminconductors 2006 (IWN 2006) by B. M. Epelbaum, Kyoto, Japan on Oct 22-27, 2006.
    DOI: 10.1002/pssb.200674835 manuscript
79. Initial Growth Stage in PVT Growth of AlN on SiC Substrates: Influence of Al₂O₃
    P. Heimann, C. Pfeiffer, M. Bickermann, B. M. Epelbaum, S. Nagata, A. Winnacker
    Phys. Status Solidi C 4 [7] (2007) 2223-2226
    Poster at the International Workshop on Nitride Seminconductors 2006 (IWN 2006) by P. Heimann, Kyoto, Japan on Oct 22-27, 2006.
    DOI: 10.1002/pssc.200674723 manuscript
80. Growth of 4H-SiC on Rhombohedral (01-14) Plane Seeds
    J. Li, O. Filip, B. M. Epelbaum, X. Xu, M. Bickermann, A. Winnacker
    J. Crystal Growth 308 (2007) 41-49
    DOI: 10.1016/j.jcrysgro.2007.07.039 manuscript
81. Similarities and Differences in Sublimation Growth of SiC and AlN
    B. M. Epelbaum, M. Bickermann, S. Nagata, P. Heimann, O. Filip, A. Winnacker
    J. Crystal Growth 305 (2007) 317-325
    Presentation at the 5. International Workshop on Bulk Nitride Semiconductors (IWBNS-IV) by B. M. Epelbaum, Makino, Shiga, Japan on Oct 16-21, 2006.
    DOI: 10.1016/j.jcrysgro.2007.04.008 manuscript
82. Wet KOH Etching of Freestanding AlN Single Crystals
    M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata, A. Winnacker
    J. Crystal Growth 300 (2007) 299-307
    DOI: 10.1016/j.jcrysgro.2006.12.037 manuscript
83. Growth and Characterization of High-quality 6H-SiC (01-15) Bulk Crystals
    O. Filip, B. M. Epelbaum, M. Bickermann, A. Winnacker
    Mater. Sci. Forum 556-557 (2007) 17-20
    Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2006) by O. Filip, Newcastle upon Tyne, Great Britain on Sep 3-7, 2006.
    DOI: 10.4028/www.scientific.net/MSF.556-557.17 manuscript
84. Photoluminescence, Cathodoluminescence, and Reflectance Study of AlN Layers and AlN Single Crystals
    G. M. Prinz, A. Ladenburger, M. Feneberg, M. Schirra, S. B. Thapa, M. Bickermann, B. Epelbaum, F. Scholz, K. Thonke, R. Sauer
    Superlatt. Microstruct. 40 (2006) 513-518
    Poster at the European Materials Research Society Spring Meeting 2006 (Symposium S) (EMRS Spring 2006) by G. M. Prinz, Nice, France on May 28-Jun 2, 2006.
    DOI: 10.1016/j.spmi.2006.10.001 manuscript
85. Orientation-Dependent Properties of Aluminum Nitride Single Crystals
    M. Bickermann, P. Heimann, B. M. Epelbaum
    Phys. Status Solidi C 3 [6] (2006) 1902-1906
    Poster at the 6. International Conference on Nitride Semiconductors (ICNS-6).
    DOI: 10.1002/pssc.200565255 manuscript poster
86. The Initial Growth Stage in PVT Growth of Aluminum Nitride
    P. Heimann, B. M. Epelbaum, M. Bickermann, S. Nagata, A. Winnacker
    Phys. Status Solidi C 3 [6] (2006) 1575-1578
    Poster at the 6. International Conference on Nitride Semiconductors (ICNS-6) by P. Heimann, Bremen on Aug 28-Sep 2, 2005.
    DOI: 10.1002/pssc.200565260 manuscript
87. Structural Properties of AlN Crystals Grown by Physical Vapor Transport
    M. Bickermann, B. M. Epelbaum, A. Winnacker
    Phys. Status Solidi C 2 [7] (2005) 2044-2048
    Poster at the International Workshop on Nitride Seminconductors 2004 (IWN 2004).
    DOI: 10.1002/pssc.200461422 manuscript poster
88. Comparative Study of Initial Growth Stage in PVT Growth of AlN on SiC and on Native AlN Single-Crystalline Substrates
    B. M. Epelbaum, P. Heimann, M. Bickermann, A. Winnacker
    Phys. Status Solidi C 2 [7] (2005) 2070-2073
    Presentation at the International Workshop on Nitride Seminconductors 2004 (IWN 2004).
    DOI: 10.1002/pssc.200461472 manuscript slides
89. Growth and Characterization of Bulk AlN Substrates Grown by PVT
    M. Bickermann, B. M. Epelbaum, M. Kazan, Z. Herro, P. Masri, A. Winnacker
    Phys. Status Solidi A 202 (2005) 531-535
    Presentation at the 7. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2004).
    DOI: 10.1002/pssa.200460416 manuscript slides
90. Investigation of (0001) Lattice Plane Bending in Large SiC Crystals Using High Energy X-ray Technique
    B. M. Epelbaum, Z. G. Herro, M. Bickermann, C. Seitz, A. Magerl, P. Masri, A. Winnacker
    Phys. Status Solidi C 2 [4] (2005) 1288-1291
    Poster at the 7. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2004) by B. M. Epelbaum, Montpellier, France on Jun 2-5, 2004.
    DOI: 10.1002/pssc.200460428 manuscript
91. Orientation-Dependent Phonon Observation in Single-Crystalline Aluminum Nitride
    M. Bickermann, B. M. Epelbaum, P. Heimann, Z. G. Herro, A. Winnacker
    Appl. Phys. Lett. 86 (2005) 131904
    DOI: 10.1063/1.1894610 manuscript
92. LPE of Silicon Carbide Using Diluted Si-Ge Flux
    O. Filip, B. Epelbaum, M. Bickermann, A. Winnacker
    Mater. Sci. Forum 483-485 (2005) 133-136
    Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2004) by O. Filip, Bologna, Italy on Aug 31-Sep 4, 2004.
    DOI: 10.4028/www.scientific.net/MSF.483-485.133 manuscript
93. Liquid Phase Homoepitaxial Growth of 6H-SiC on (01-15) Oriented Substrates
    O. Filip, B. Epelbaum, Z. G. Herro, M. Bickermann, A. Winnacker
    J. Crystal Growth 282 (2005) 286-289
    DOI: 10.1016/j.jcrysgro.2005.05.013 manuscript
94. Growth of 6H-SiC Crystals Along the [01-15] Direction
    Z. G. Herro, B. M. Epelbaum, M. Bickermann, C. Seitz, A. Magerl, A. Winnacker
    J. Crystal Growth 275 (2005) 496-503
    DOI: 10.1016/j.jcrysgro.2004.12.024 manuscript
95. Approaches to Seeded PVT Growth of AlN Crystals
    B. M. Epelbaum, M. Bickermann, A. Winnacker
    J. Crystal Growth 275 (2005) e479-e484
    Presentation at the 14. International Conference on Crystal Growth (ICCG-14) by B. M. Epelbaum, Grenoble, France on Aug 9-13, 2004.
    DOI: 10.1016/j.jcrysgro.2004.11.113 manuscript
96. Micropipe Healing in SiC Wafers by Liquid-Phase Epitaxy in Si-Ge Melts
    O. Filip, B. Epelbaum, M. Bickermann, A. Winnacker
    J. Crystal Growth 271 (2004) 142-150
    DOI: 10.1016/j.jcrysgro.2004.07.040 manuscript
97. Characterization of Bulk AlN with Low Oxygen Content
    M. Bickermann, B. M. Epelbaum, A. Winnacker
    J. Crystal Growth 269 (2004) 432-442
    DOI: 10.1016/j.jcrysgro.2004.05.071 manuscript
98. Natural Growth Habit of Bulk AlN Crystals
    B. M. Epelbaum, C. Seitz, A. Magerl, M. Bickermann, A. Winnacker
    J. Crystal Growth 265 (2004) 577-581
    DOI: 10.1016/j.jcrysgro.2004.02.100 manuscript
99. Effective Increase of Single-Crystalline Yield During PVT Growth of SiC by Tailoring of Radial Temperature Gradient
    Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, A. Winnacker
    J. Crystal Growth 262 (2004) 105-112
    DOI: 10.1016/j.jcrysgro.2003.10.060 manuscript
100. Structural, Optical, and Electrical Properties of Bulk AlN Crystals Grown by PVT
     M. Bickermann, B. M. Epelbaum, A. Winnacker
     Mater. Sci. Forum 457-460 (2004) 1541-1544
     Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003).
     DOI: 10.4028/www.scientific.net/MSF.457-460.1541 manuscript poster
101. Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
     M. Bickermann, K. Irmscher, R. Weingärtner, A. Winnacker
     Mater. Sci. Forum 457-460 (2004) 787-790
     Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003).
     DOI: 10.4028/www.scientific.net/MSF.457-460.787 manuscript poster
102. Sublimation Growth of Bulk AlN crystals: Process Temperature and Growth Rate
     B. M. Epelbaum, M. Bickermann, A. Winnacker
     Mater. Sci. Forum 457-460 (2004) 1537-1540
     Presentation at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by B. M. Epelbaum, Lyon, France on Oct 5-10, 2003.
     DOI: 10.4028/www.scientific.net/MSF.457-460.1537 manuscript
103. Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C
     B. M. Epelbaum, P. A. Gurzhiyants, Z. Herro, M. Bickermann, A. Winnacker
     Mater. Sci. Forum 457-460 (2004) 119-122
     Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by B. M. Epelbaum, Lyon, France on Oct 5-10, 2003.
     DOI: 10.4028/www.scientific.net/MSF.457-460.119 manuscript
104. Uniform Axial Charge Carrier Concentration in PVT-grown p-type 6H-SiC by Non-uniform Distribution of Boron in the Powder Source
     Z. G. Herro, M. Bickermann, B. M. Epelbaum, R. Weingärtner, U. Künecke, A. Winnacker
     Mater. Sci. Forum 457-460 (2004) 719-722
     Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by Z. G. Herro, Lyon, France on Oct 5-10, 2003.
     DOI: 10.4028/www.scientific.net/MSF.457-460.719 manuscript
105. Effect of Thermal Field on Interface Step Structures during PVT Growth of Si-face 6H-SiC
     Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, A. Winnacker
     Mater. Sci. Forum 457-460 (2004) 95-98
     Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by Z. G. Herro, Lyon, France on Oct 5-10, 2003.
     DOI: 10.4028/www.scientific.net/MSF.457-460.95 manuscript
106. Natural Crystal Habit and Preferential Growth Directions in PVT of Silicon Carbide
     Z. G. Herro, B. M. Epelbaum, M. Bickermann, P. Masri, C. Seitz, A. Magerl, A. Winnacker
     Mater. Sci. Forum 457-460 (2004) 111-114
     Poster at the 10. International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003) by Z. G. Herro, Lyon, France on Oct 5-10, 2003.
     DOI: 10.4028/www.scientific.net/MSF.457-460.111 manuscript
107. AFM Investigation of Interface Step Structures On PVT-Grown of (0001)Si 6H-SiC crystals
     Z. G. Herro, B. M. Epelbaum, R. Weingärtner, M. Bickermann, P. Masri, A. Winnacker
     J. Crystal Growth 270 (2004) 113-120
     DOI: 10.1016/j.jcrysgro.2004.05.107 manuscript
108. On the Preparation of Vanadium Doped PVT Grown SiC Boules with High Semi-Insulating Yield
     M. Bickermann, R. Weingärtner, A. Winnacker
     J. Crystal Growth 254 (2003) 390-399
     DOI: 10.1016/S0022-0248(03)01179-5 manuscript
109. PVT Growth of Bulk AlN Crystals with Low Oxygen Contamination
     M. Bickermann, B. M. Epelbaum, A. Winnacker
     Phys. Status Solidi C 0 [7] (2003) 1993-1996
     Presentation at the 5. International Conference on Nitride Semiconductors (ICNS-5).
     DOI: 10.1002/pssc.200303280 manuscript slides
110. Electrical and Optical Characterization of p-Type Boron Doped 6H-SiC Bulk Crystals
     M. Bickermann, R. Weingärtner, Z. Herro, D. Hofmann, U. Künecke, P. J. Wellmann, A. Winnacker
     Mater. Sci. Forum 433-436 (2003) 337-340
     Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002).
     DOI: 10.4028/www.scientific.net/MSF.433-436.337 manuscript poster
111. Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping During PVT Bulk Crystal Growth
     M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker
     Mater. Sci. Forum 433-436 (2003) 51-54
     Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002).
     DOI: 10.4028/www.scientific.net/MSF.433-436.51 manuscript poster
112. Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
     B. M. Epelbaum, M. Bickermann, A. Winnacker
     Mater. Sci. Forum 433-436 (2003) 983-986
     Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) by B. M. Epelbaum, Linköping, Sweden on Sep 1-5, 2002.
     DOI: 10.4028/www.scientific.net/MSF.433-436.983 manuscript
113. Effective Increase of Single-Crystalline Yield During PVT Growth of SiC by Tailoring of Radial Temperature Gradient
     Z. Herro, M. Bickermann, B. M. Epelbaum, P. Masri, A. Winnacker
     Mater. Sci. Forum 433-436 (2003) 67-70
     Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) by Z. Herro, Linköping, Sweden on Sep 1-5, 2002.
     DOI: 10.4028/www.scientific.net/MSF.433-436.67 manuscript
114. PVT Growth of Co-Doped Semi-Insulating 2 inch 6H-SiC Crystals
     M. Rasp, Th. L. Straubinger, E. Schmitt, M. Bickermann, S. Reshanov, H. Sadowski
     Mater. Sci. Forum 433-436 (2003) 55-58
     Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) by M. Rasp, Linköping, Sweden on Sep 1-5, 2002.
     DOI: 10.4028/www.scientific.net/MSF.433-436.55 manuscript
115. Impact of Compensation on Optical Absorption Bands in the Below Band Gap Region in n-type (N) 6H-SiC
     R. Weingärtner, M. Bickermann, Z. Herro, U. Künecke, S. A. Sakwe, P. J. Wellmann, A. Winnacker
     Mater. Sci. Forum 433-436 (2003) 333-336
     Poster at the European Conference on Silicon Carbide and Related Materials 2002 (ECSCRM 2002) by R. Weingärtner, Linköping, Sweden on Sep 1-5, 2002.
     DOI: 10.4028/www.scientific.net/MSF.433-436.333 manuscript
116. Aluminum p-type Doping of Silicon Carbide Crystals Using a Modified Physical Vapor Transport Growth Method
     T. L. Straubinger, M. Bickermann, R. Weingärtner, P. J. Wellmann, A. Winnacker
     J. Crystal Growth 240 (2002) 117-123
     DOI: 10.1016/S0022-0248(02)00917-X manuscript
117. On the Preparation of Vanadium-Doped Semi-insulating SiC Bulk Crystals
     M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker
     Mater. Sci. Forum 389-393 (2002) 139-142
     Presentation at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001).
     DOI: 10.4028/www.scientific.net/MSF.389-393.139 manuscript slides
118. Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
     M. Bickermann, R. Weingärtner, D. Hofmann, T. L. Straubinger, A. Winnacker
     Mater. Sci. Forum 389-393 (2002) 127-130
     Poster at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001).
     DOI: 10.4028/www.scientific.net/MSF.389-393.127 manuscript poster
119. Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
     B. M. Epelbaum, D. Hofmann, M. Bickermann, A. Winnacker
     Mater. Sci. Forum 389-393 (2002) 1445-1448
     Presentation at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001).
     DOI: 10.4028/www.scientific.net/MSF.389-393.1445 manuscript slides
120. Aluminum Doping of 6H and 4H SiC with a Modified PVT Growth Method
     T. L. Straubinger, M. Bickermann, M. Rasp, R. Weingärtner, P. J. Wellmann, A. Winnacker
     Mater. Sci. Forum 389-393 (2002) 131-134
     Poster at the 9. International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM 2001) by T. L. Straubinger, Tsukuba, Japan on Oct 28-Nov 2, 2001.
     DOI: 10.4028/www.scientific.net/MSF.389-393.131 manuscript
121. Determination of Charge Carrier Concentration in n- and p-Doped SiC Based on Optical Absorption Measurements
     R. Weingärtner, P. J. Wellmann, M. Bickermann, D. Hofmann, T. L. Straubinger, A. Winnacker
     Appl. Phys. Lett. 80 (2002) 70-72
     DOI: 10.1063/1.1430262 manuscript
122. Optical Quantitative Determination of Doping Levels and their Distribution in SiC
     P. J. Wellmann, R. Weingärtner, M. Bickermann, T. L. Straubinger, A. Winnacker
     Mater. Sci. Eng. B 91-92 (2002) 75-78
     Presentation at the 9. Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-9) by P. J. Wellmann, Rimini, Italy on Sep 25-28, 2001.
     DOI: 10.1016/S0921-5107(01)00976-X manuscript
123. Incorporation of Boron and Vanadium during PVT Growth of 6H-SiC Crystals
     M. Bickermann, B. M. Epelbaum, D. Hofmann, T. L. Straubinger, R. Weingärtner, A. Winnacker
     J. Crystal Growth 233 (2001) 211-218
     DOI: 10.1016/S0022-0248(01)01579-2 manuscript
124. On the Preparation of Semi-Insulating SiC Bulk Crystals by the PVT Technique
     M. Bickermann, D. Hofmann, T. L. Straubinger, R. Weingärtner, P. J. Wellmann, A. Winnacker
     Appl. Surf. Sci. 184 (2001) 84-89
     Poster at the European Materials Research Society Spring Meeting 2001 (Symposium F) (EMRS Spring 2001).
     DOI: 10.1016/S0169-4332(01)00481-0 manuscript poster
125. SiC Crystal Growth from the Vapor and Liquid Phase
     D. Hofmann, M. Bickermann, D. Ebling, B. Epelbaum, L. Kadinski, M. Selder, T. Straubinger, R. Weingaertner, P. Wellmann, A. Winnacker
     Mater. Res. Soc. Symp. Proc. 640 (2001) H1.1
     Invited talk at the Materials Research Society Fall Meeting 2000 (Symposium H) (MRS Fall 2000) by D. Hofmann, Boston, Massachusetts, USA on Nov 27-29, 2000.
     DOI: 10.1557/PROC-640-H1.1 manuscript
126. Study of Boron Incorporation during PVT growth of p-type SiC Crystals
     M. Bickermann, D. Hofmann, M. Rasp, T. L. Straubinger, R. Weingärtner, P. J. Wellmann, A. Winnacker
     Mater. Sci. Forum 353-356 (2001) 49-52
     Poster at the European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000).
     DOI: 10.4028/www.scientific.net/MSF.353-356.49 manuscript poster
127. Stability Criteria for 4H-SiC Bulk Growth
     T. L. Straubinger, M. Bickermann, D. Hofmann, R. Weingärtner, P. J. Wellmann, A. Winnacker
     Mater. Sci. Forum 353-356 (2001) 25-28
     Poster at the European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000) by T. L. Straubinger, Kloster Banz on Sep 3-7, 2000.
     DOI: 10.4028/www.scientific.net/MSF.353-356.25 manuscript
128. Absorption Measurements and Doping Level Evaluation in n-type and p-type 4H-SiC and 6H-SiC
     R. Weingärtner, M. Bickermann, D. Hofmann, M. Rasp, T. L. Straubinger, P. J. Wellmann, A. Winnacker
     Mater. Sci. Forum 353-356 (2001) 397-400
     Poster at the European Conference on Silicon Carbide and Related Materials 2000 (ECSCRM 2000) by R. Weingärtner, Kloster Banz on Sep 3-7, 2000.
     DOI: 10.4028/www.scientific.net/MSF.353-356.397 manuscript
129. Absorption Mapping of Doping Level Distribution in n-type and p-type 4H-SiC and 6H-SiC
     R. Weingärtner, M. Bickermann, S. Bushevoy, D. Hofmann, M. Rasp, T. L. Straubinger, P. J. Wellmann, A. Winnacker
     Mater. Sci. Eng. B 80 (2001) 357-361
     Poster at the 5. Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2000) by R. Weingärtner, Heraklion, Crete, Greece on May 21-24, 2000.
     DOI: 10.1016/S0921-5107(00)00599-7 manuscript
130. Analysis on the Formation of Filamentory and Planar Voids in Silicon Carbide Bulk Crystals
     D. Hofmann, M. Bickermann, W. Hartung, A. Winnacker
     Mater. Sci. Forum 338-342 (2000) 445-448
     Presentation at the 8. International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM 1999) by D. Hofmann, Durham, North Carolina, USA on Oct 10-15, 1999.
     DOI: 10.4028/www.scientific.net/MSF.338-342.445 manuscript
131. Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non Stationary Process Conditions
     T. L. Straubinger, M. Bickermann, M. Grau, D. Hofmann, L. Kadinski, S. G. Müller, M. Selder, P. J. Wellmann, A. Winnacker
     Mater. Sci. Forum 338-342 (2000) 39-42
     Presentation at the 8. International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM 1999) by T. L. Straubinger, Durham, North Carolina, USA on Oct 10-15, 1999.
     DOI: 10.4028/www.scientific.net/MSF.338-342.39 manuscript
132. Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
     P. J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T. Straubinger, A. Winnacker
     Mater. Sci. Forum 338-342 (2000) 71-74
     Presentation at the 8. International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM 1999) by P. J. Wellmann, Durham, North Carolina, USA on Oct 10-15, 1999.
     DOI: 10.4028/www.scientific.net/MSF.338-342.71 manuscript
133. In-Situ Visualization and Analysis of Silicon Carbide Physical Vapor Transport Growth Using Digital X-Ray Imaging
     P. J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T. Straubinger, A. Winnacker
     J. Crystal Growth 216 (2000) 263-272
     DOI: 10.1016/S0022-0248(00)00372-9 manuscript
134. Sublimation Growth of SiC Bulk Crystals: Experimental and Theoretical Studies on Defect Formation and Growth Rate Augmentation
     D. Hofmann, M. Bickermann, R. Eckstein, M. Kölbl, St. G. Müller, E. Schmitt, A. Weber, A. Winnacker
     J. Crystal Growth 198/199 (1999) 1005-1010
     DOI: 10.1016/S0022-0248(98)01212-3 manuscript
135. Analysis on Defect Generation During the SiC Bulk Growth Process
     D. Hofmann, E. Schmitt, M. Bickermann, M. Kölbl, P. J. Wellmann, A. Winnacker
     Mater. Sci. Eng. B 61-62 (1999) 48-53
     Presentation at the European Conference on Silicon Carbide and Related Materials 1998 (ECSCRM 1998) by D. Hofmann, Montpellier, France on Sep 2-4, 1998.
     DOI: 10.1016/S0921-5107(98)00443-7 manuscript
136. Online Monitoring of PVT SiC Bulk Crystal Growth Using Digital X-Ray Imaging
     P. J. Wellmann, M. Bickermann, M. Grau, D. Hofmann, T. Straubinger, A. Winnacker
     Mater. Res. Soc. Symp. Proc. 572 (1999) 259-264
     Presentation at the Materials Research Society Spring Meeting 1999 (Symposium Y) (MRS Spring 1999) by P. J. Wellmann, San Francisco, California, USA on Apr 5-9, 1999.
     DOI: 10.1557/PROC-572-259 manuscript
137. Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
     M. Müller, M. Bickermann, D. Hofmann, A.-D. Weber, A. Winnacker
     Mater. Sci. Forum 264-268 (1998) 69-72
     Poster at the 7. International Conference on Silicon Carbide and Group III Nitrides 1997 (ICSCIII-N 1997) by M. Müller, Stockholm, Sweden on Aug 31-Sep 5, 1997.
     DOI: 10.4028/www.scientific.net/MSF.264-268.69 manuscript