Research interest
- Melt and flux growth of oxides and fluorides for optical, piezoelectric and laser crystals, and as substrates for novel electronic devices.
- Growth and characterization of wide-bandgap semiconductor bulk crystals. These crystals are used as substrate material in semiconductor technology.
- Growth and characterization technologies, correlation between preparation and properties of bulk single crystals in a general sense.


Member of the board since 2015


III-Nitride Ultraviolet Emitters, Springer Verlag 2016


Last changes on this homepage: November 23, 2024
Co-authored submissions and recent publications:
- Prediction of Impurity Concentrations by Absorption Spectra in AlN Single Crystals Using Random Forest Regression CrystEngComm 27 (2025) 184-190
- Bulk Single Crystals and Physical Properties of Rutile-GeO2 for High Power Electronics and DUV Optoelectronics Phys. Status Solidi B (2025) Early View, DOI: 10.1002/pssb.202400326
- Solid-Solution Limits and Thorough Characterization of Bulk β-(AlxGa1-x)2O3 Single Crystals Grown by the Czochralski Method Adv. Mater. Interfaces 12 (2025) 2400122
- Thermal Conductivity in Solid Solutions of Lithium Niobate Tantalate Single Crystals from 300K up to 1300K J. Alloys Compounds 1008 (2024) 176549
- Evaluation and Thermodynamic Optimization of Phase Diagram of Lithium Niobate Tantalate Solid Solutions J. Mater. Sci. 59 (2024) 12305-12316
- Efficient Diameter Enlargement of Bulk AlN Single Crystals with High Structural Quality Appl. Phys. Express 16 (2023) 075502
- Fanout Periodic Poling of BaMgF4 Crystals Opt. Mater. Express 13 [8] (2023) 2158-2164
- Solid Solutions of Lithium Niobate and Lithium Tantalate: Crystal Growth and the Ferroelectric Transition Ferroelectrics 613 (2023) 250-262
- Bulk Single Crystals and Physical Properties of β-(AlxGa1-x)2O3 (x = 0 - 0.35) Grown by the Czochralski Method J. Appl. Phys. 133 (2023) 035702
- Dislocation Climb in AlN Crystals Grown at Low Temperature Gradients Revealed by 3D X-Ray Imaging Crystal Growth Des. 23 (2023) 1538-1546
- The Thermal Conductivity Tensor of β-Ga2O3 from 300 to 1275 K Cryst. Res. Technol. 58 (2023) 2200204
Recent abstracts and presentations:
- Growth of Bulk Single Crystals of Novel Semiconductor Materials (AlN, Ga2O3, etc.) for Next Generation Efficient Power Electronics
Invited talk at the 2. International Conference on Materials for Energy & Environmental Engineering (ICM3E 2024)
Algiers, Algeria on Nov 26-28, 2024 - Bulk Crystals for Novel Semiconductors Prepared at IKZ: Gallium Oxide and Beyond
Presentation at the DGKK workshop on "Bulk Semiconductor Crystals"
Berlin-Adlershof on Oct 9-10, 2024 - Growth and Investigation of Hexagallate Substrate Crystals for Strain-engineered Functional Oxide layers
Poster at the 8. European Conference on Crystal Growth (ECCG-8)
Warsaw, Poland on Jul 21-25, 2024 - Co-doping Effects on Anti-Stokes Fluorescence Cooling in Yb:YLF
Poster at the Annual conference of the DGKK (DKT 2024)
Erlangen on Mar 6-8, 2024
and at the 8. European Conference on Crystal Growth (ECCG-8)
Warsaw, Poland on Jul 21-25, 2024 - AlN Substrates for UV and Power Applications
Lecture at the 5. IKZ Winter School (IKZ-School 2024)
IKZ Berlin on Feb 28-Mar 1, 2024
Conference organisation:
- Annual conference of the DGKK (DKT 2025), Mar 5-7, 2025 in Frankfurt
(Member of the Program Committee) - International Workshop on Nitride Semiconductors 2024 (IWN 2024), Nov 3-8, 2024 in Oahu, Hawaii, USA
(Member of the Topical Program Committee Bulk Growth Sessions) - DGKK workshop on "Bulk Semiconductor Crystals", Oct 9-10, 2024 in Berlin
(Conference chair and chief organizer) - 8. European Conference on Crystal Growth (ECCG-8), Jul 21-25, 2024 in Warsaw, Poland
(Member of the International Advisory Committee)