Leibniz-Institut für Kristallzüchtung

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Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defectsI. Gamov, E. Richter, M. Weyers, G. Gärtner, and K. IrmscherJ. Appl. Phys. 127 (2020) 205701

Thin film transistors based on ultra-wide bandgap spinel ZnGa₂O₄Y. Jang, Seongyun Hong, Jihoon Seo, Hyeongmin Cho, Kookrin Char , and Zbigniew GalazkaAppl. Phys. Lett. 116 (2020) 202104

Imprinting Ferromagnetism and Superconductivity in Single Atomic Layers of Molecular SuperlatticesZ. Li, Xiuying Zhang, Xiaoxu Zhao, Jing Li, Tun Seng Herng, Haomin Xu, Fanrong Lin, Pin Lyu, Xinnan Peng, Wei Yu, Xiao Hai, Cheng Chen, Huimin Yang, Jens Martin, Jing Lu, Xin Luo, A. H. Castro Neto, Stephen J. Pennycook, Jun Ding, Yuanping Feng, and Jiong LuAdvanced Materials 32 (2020) 1907645

Approaching the high intrinsic electrical resistivity of NbO₂ in epitaxially grown filmsJ. Stoever, Jos E. Boschker , Saud Bin Anooz , Martin Schmidbauer , Peter Petrik , Jutta Schwarzkopf , Martin Albrecht , and Klaus IrmscherAppl. Phys. Lett. 116 (2020) 182103

Low-frequency spin qubit energy splitting noise in highly purified ²⁸Si/SiGeT. Struck, Arne Hollmann, Floyd Schauer, Olexiy Fedorets , Andreas Schmidbauer, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Łukasz Cywiński , Dominique Bougeard Lars R. Schreiber npj Quantum Information 6, (2020) 40

MHz-repetition rate fs-laser-inscribed crystalline waveguide lasers inscribed at 100 mm/sK. Hasse, Christian Kränkel Optics Express 28(8) (2020) 12011

Strain-Engineered Ferroelastic Structures in PbTiO₃ Films and Their Control by Electric FieldsE. Langenberg, Hanjong Paik, Eva H. Smith, Hari P. Nair, Isabelle Hanke, Steffen Ganschow, Gustau Catalan, Neus Domingo, and Darrell G. SchlomACS Appl. Mater. Interfaces 12 (2020) 20691–20703

Investigation of the Magnesium Impurity in SiliconL. M. Portsel, V. B. Shuman, A. A. Lavrent’ev, A. N. Lodygin, N. V. Abrosimov, and Yu. A. AstrovSemiconductors 4 (2020)

Growth of heavily-doped Germanium single crystals for mid-Infrared applicationsR. Sumathi, Nikolay Abrosimov, Kevin-P. Gradwohl, Matthias Czupalla, Jörg FischerJournal of Crystal Growth 535 (2020) 125490

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphireN. Susilo, E.Ziffer, S.Hagedorn, L. Cancellara, C. Netzel, N. Lobo Ploch, S. Wu, J. Rass, S. Walde, L. Sulmoni, M. Guttmann, T. Wernicke, M. Albrecht, M. Weyers, M. KneisslPhotonics Research 8 (2020) 589-594

High quality-factor Kerr-lens mode-locked Tm:Sc₂O₃ single crystal laser with anomalous spectral broadeningA. Suzuki, Christian Kränkel, and Masaki TokurakawaAppl. Phys. Express 13 (2020) 052007

Gate controlled valley polarizer in bilayer grapheneH. Chen, Pinjia Zhou, Jiawei Liu, Jiabin Qiao, Barbaros Oezyilmaz, Jens MartinNature Communications 11 (2020) 1202

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing StudiesV. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, G. A. Oganesyan, D. S. PoloskinSemiconductors 54 (2020)4 6–54

The natural critical current density limit for Li₇La₃Zr₂O₁₂ garnetsF. Flatscher, Martin Philipp, Steffen Ganschow, H. Martin R. Wilkening and Daniel RettenwanderJ. Mater. Chem. A 8 (2020) 15782-15788

Bulk β-Ga₂O₃ single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiationZ. Galazka, R. Schewski, K. Irmscher, W. Drozdowski, M. E. Witkowski, M. Makowski, A. J. Wojtowicz, I. M. Hanke, M. Pietsch, T. Schulz, D. Klimm, S. Ganschow, A. Dittmar, A. Fiedler, T. Schroeder, M. BickermannJournal of Alloys and Compounds 818 (2020) 152842

Charge disproportionate molecular redox for discrete memristive and memcapacitive switchingS. Goswami, Santi P. Rath, Damien Thompson, Svante Hedström, Meenakshi Annamalai, Rajib Pramanick, B. Robert Ilic, Soumya Sarkar, Sonu Hooda, Christian A. Nijhuis, Jens Martin, R. Stanley Williams, Sreebrata Goswami & T. Venkatesan Nature Nanotechnology 15 (2020)380–389

Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/S_xGe_1-x Quantum DotA. Hollmann, Tom Struck, Veit Langrock, Andreas Schmidbauer, Floyd Schauer, Tim Leonhardt, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Dominique Bougeard, Lars R. SchreiberPhys. Rev. Applied 13 (2020) 034068

Technology development of high purity germanium crystals for radiation detectorsN. Abrosimov, M. Czupalla, N. Dropka, J. Fischer, A. Gybin, K. Irmscher, J. Janicskó-Csáthy, U. Juda, S. Kayser, W. Miller, M. Pietsch, F. M. KießlingJournal of Crystal Growth 532, (2020) 125396

Favourable growth conditions for the preparation of bulk AlN single crystals by PVTC. Hartmann, L. Matiwe, J. Wollweber, I. Gamov, K. Irmscher, M. Bickermann, T. StraubingerCrystEngComm. 22 (2020) 1762-1768

Elastic properties of single crystal Bi₁₂SiO₂₀ as a function of pressure and temperature and acoustic attenuation effects in Bi₁₂MO₂₀ (M = Si, Ge and Ti)E. Haussühl, Hans Josef Reichmann, Jürgen Schreuer, Alexandra Friedrich, Christian Hirschle , Lkhamsuren Bayarjargal, Björn Winkler, Igor Alencar, Leonore Wiehl, Steffen GanschowMater. Res. Express 7 (2020) 025701

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