Publikationen

Filter
Veröffentlichungsjahr
—

Sortieren nach

Suche (Autor, Titel)

Löschen
Publikation
Quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulationsK.-P. Gradwohl, W. Miller, N. Dropka, R. R. SumathiComputational Materials Science 211(2022) 111537.
Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphireT. Chou, S. B. Anooz, R. Grüneberg, N. Dropka, W. Miller, T. T. V.Tran, J. Rehm, M. Albrecht, A. PoppJournal of Crystal Growth 592(2022) 126737
Exploiting the Nanostructural Anisotropy of β‑Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic ContactsM.-H. Lee, T.-S. Chou, S. B. Anooz, Z. Galazka, A. Popp, R. L. PetersonACS Nano 2022, 16, 8, 11988–11997
A robust high-performance electronic synapse based on epitaxial ferroelectric Hf0.5Zr0.5O2 films with uniform polarization and high Curie temperatureY. Wang, Q. Wang, J. Zhao, T. Niermann, Y. Liu, L. Dai, K. Zheng, Y. Sun, Y. Zhang, J. Schwarzkopf, T. Schroeder, Z. Jiang, W. Ren, G. NiuApplied Materials Today 29 (2022) 101587
Si Doping Mechanism in MOVPE-grown (100) β-Ga2O3 filmsT. Chou, S. B. Anooz, R. Grüneberg, N. Dropka, J. Rehm, T. T. V. Tran, K. Irmscher, P. Seyidov, W.Miller, Z.Galazka, M. Albrecht, A. PoppAppl. Phys. Lett. 121, 032103 (2022)
Visible solid-state lasers based on Pr3+ and Tb3+H. Tanaka, S. Kalusniak, M. Badtke, M. Demesh, N. V. Kuleshov, F. Kannari, C. Kränkel a,*Progress in Quantum Electronics 84 (2022) 100411
Few-ns, kW peak power Q-switched pulses from orange and red Pr:YLF lasersM. Badtke1, H. Tanaka, S. Kalusniak, M. Demesh, N. Kuleshov, C. KränkelApplied Physics Express 15 (2022) 082006
Determination of the phase diagram Tb2O3–SiO2 and crystal growth of the rare earth pyrosilicate Tb2Si2O7 by the optical floating-zone (OFZ) techniqueN. Wolff, D. KlimmJournal of Solid State Chemistry, 312, (2022), 123269
Stability of ZnSe-passivated laser facets cleaved in air and in ultra-high vacuumJ. E. Boschker, U. Spengler, P. Ressel, M. Schmidbauer, A. Mogilatenko and A. KniggeIEEE Photonics Journal 14, 1531606 (2022)
Ultrafast element- and depth-resolved magnetization dynamics probed by transverse magneto-optical Kerr effect spectroscopy in the soft x-ray rangeM. Hennecke, D. Schick, T.Sidiropoulos, F. Willems, A. Heilmann, M. Bock, L. Ehrentraut, D. Engel, P. Hessing, B. Pfau, M. Schmidbauer, A. Furchner, M. Schnuerer, C. von Korff Schmising, and S. EisebittPhys. Rev. Research 4, L022062 (2022)
Wüstite (Fe1-xO) – Thermodynamics and crystal growthM. Hamada, S. Ganschow, D. Klimm, G. Serghiou, H.-J. Reichmann and M. BickermannZeitschrift für Naturforschung B, 71, (2022)
Preparation of Single-Crystal Isotopically Enriched 70 Ge by a Hydride MethodV. A. Gavvaa, O. Yu. Troshin, S. A. Adamchik, A. Yu. Lashkov, N. V. Abrosimov, A. M. Gibin, P. A. Otopkova, A. Yu. Sozin, and A. D. BulanovInorganic Materials volume 58, pages246–251 (2022)
Adjustment of resistivity for phosphorus-doped n-type multicrystalline siliconI. Buchovska, K. Dadzis, N. Dropka, F. M. KiesslingSolar Energy Materials & Solar Cells 248 (2022) 111989
Modulation of Spin Dynamics in 2D Transition-Metal Dichalcogenide via Strain-Driven Symmetry BreakingT. Liu, D. Xiang, H. Kuan Ng, Z. Han, K. Hippalgaonkar, A. Suwardi, J. Martin, S. Garaj, and J. WuAdv. Sci, (2022), 2200816
FAIR data enabling new horizons for materials researchM. Scheffler, M. Aeschlimann, M.Albrecht, T. Bereau, H.-J. Bungartz, C. Felser, M. Greiner, A. Groß, C. Koch, K. Kremer, W. E. Nagel, M. Scheidgen, C. Wöll, and C. DraxlNature, 604, p. 635–642 (2022)
Metal-assisted chemically etched silicon nanopillars hosting telecom photon emittersM. Hollenbach, N. S. Jagtap, C. Fowley, et al.J. Appl. Phys. 132, 033101 (2022)
Rare-earth doped mixed sesquioxides for ultrafast lasersC. Kränkel, A. Uvanova, C. Guguschev, S. Kalusniak, L. Hülshoff, H. Tanaka, and D. KlimmOptical Materials Express, 12, (2022), 3
On Thermodynamic Aspects of Oxide Crystal GrowthD. Klimm, and N. WolffAppl. Sci., 12, (2022), 2774
Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defectsV. Emtsev, N. Abrosimov, V. Kozlovski, et al.J. Appl. Phys. 131, (2022), 125705
Leveraging dewetting models rather than nucleation models: current crystallographic challenges in interfacial and nanomaterials researchO.C. Ernst, Y. Liu and T. BoeckZ. Kristallogr. (2022)