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Toward Model-Based Control of the Vertical Gradient Freeze Crystal Growth ProcessS. Ecklebe, F. Woittennek, C. Frank-Rotsch, N. Dropka, and J. WinklerIEEE Transactions on Control Systems Technology, 30, (2021), 384 - 391
Three-Dimensional Interfacing of Cells with Hierarchical Silicon Nano/Microstructures for Midinfrared Interrogation of In Situ Captured ProteinsJ. Flesch, M. Bettenhausen, M. Kazmierczak, W. M. Klesse, O. Skibitzki, O. E. Psathaki, R. Kurre, G. Capellini, S. Guha, T. Schroeder, B. Witzigmann, Ch. You, and J. PiehlerACS Appl. Mater. Interfaces, 13, (2021), 8049–8059
Self-diffusion in high-purity α-Al2O3: Comparison of Ti-doped, Mg-doped and undoped single crystalsSteffen Ganschow, Klemens Kelm, and Günter BorchardtJournal of the European Ceramic Society, 41, (2021), 663–668
Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum WellsJ. Smalc-Koziorowska, E. Grzanka, A. Lachowski, R. Hrytsak, M. Grabowski, S. Grzanka, S. Kret, R. Czernecki, H. Turski, L. Marona, T. Markurt, T. Schulz, M. Albrecht, and M. LeszczynskiACS Appl. Mater. Interfaces, 13, (2021), 7476–7484
Reciprocal space slicing: A time-efficient approach to femtosecond x-ray diffractionS.P. Zeuschner, M. Mattern, J.-E. Pudell, A. von Reppert, M. Rössle, W. Leitenberger, J. Schwarzkopf, J.E. Boschker, M. Herzog, M. BargheerStructural Dynamics, 8, (2021), 014302
A new concept for temporal gating of synchrotron X-ray pulsesD. Schmidt, R. Bauer, S. Chung, D. Novikov, M. Sander, J.-E. Pudell, M. Herzog, D. Pfuetzenreuter, J. Schwarzkopf, R. Chernikov and P. GaalJ. Synchrotron Rad., 28, (2021), 375-382
Kerr-lens mode-locked Tm solid state laser with spectral broadening effectM. Tokurakawa,A. Suzuki, and C. KränkelRev. Las. Eng. 49, (2021), 385-389
Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone methodH. J. Rost, I.Buchovska, K.Dadzis, U.Juda, M.Renner, R.MenzelJournal of Crystal Growth 552 (2020) 125842
Thermoelastic anisotropy in NdScO3 and NdGaO3 perovskitesC. Hirschle, J. Schreuer, S. Ganschow, L. PetersMaterials Chemistry and Physics 254 (2020) 123528
UV-pumped visible Tb3+-lasersS. Kalusniak, H. Tanaka, E. Castellano-Hernandez, AND C. KrankelOptics Letters 45 (22) (2020) 6170-6173
Temperature Dependence of Three-Dimensional Domain Wall Arrangement in Ferroelectric K0.9Na0.1NbO3 Epitaxial Thin FilmsM. Schmidbauer, L. Bogula, B. Wang, M. Hanke, L. von Helden, A. Ladera, J.-J. Wang, L.-Q. Chen, and J. SchwarzkopfJ. Appl. Phys. 128, (2020), 184101
Ferroelectric phase transitions in multi-domain K0.9Na0.1NbO3 epitaxial thin filmsL. Bogula, Leonard von Helden, Carsten Richter, Michael Hanke, Jutta Schwarzkopf and Martin SchmidbauerNano Futures 4 (2020) 035005
Numerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single CrystalsK. Böttcher, Wolfram Miller, Steffen GanschowCryst. Res. Technol. 56 (2020) 2000106
Raman scattering in heavily donor doped β- Ga2O3A. Fiedler, M. Ramsteiner, Z. Galazka, and K. IrmscherAppl. Phys. Lett. 117 (2020) 152107
In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substratesF. Lange, Owen Ernst, Thomas Teubner, Carsten Richter, Martin Schmidbauer, Ociler Skibitzki, Thomas Schroeder, Peer Schmidt, and Torsten BoeckNano Futures 4 (2020) 035006
Higher-order Zeeman effect of Mg-related donor complexes in siliconS. G. Pavlov, D. L. Kamenskyi, Yu. A. Astrov, V. B. Shuman, L. М. Portsel, A. N. Lodygin, N. V. Abrosimov, H. Engelkamp, A. Marchese, and H.-W. HübersPHYSICAL REVIEW B 102 (2020) 115205
Characterization of Mono-Crystalline and Multi-Crystalline Silicon by the Extended Lateral Photovoltage Scanning and Scanning PhotoluminescenceI. Buchovska, Anke Lüdge, Wolfgang Lüdge, and Frank M. KiesslingECS Journal of Solid State Science and Technology 9 (2020) 086001
Extraction of Classification Rules from Sequences of Crystal Growth DataR. Busa, Y. Dauxais, S. Ecklebe, N. Dropka, M. HolenaProceedings of the 20th Conference Information Technologies - Applications and Theory - ITAT 2020, Oravská Lesná, Slovakia,18-22 sept 2020, p.99-105
Behavior of Phosphorus Donors in Bulk Single-Crystal Monoisotopic 28Si1-x72Gex AlloysA. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, and N. V. AbrosimovSemiconductors, 54 (9) (2020) 1123–1126