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Laser performance of high optical quality 4 at.% Pr3+: Sr0.7La0.3Mg0.3Al11.7O19 (Pr:ASL) single crystalsF. Cassouret, M. Badtke, P. Loiseau, and G. AkaOptics Express 31 (8), 12497-12507 (2023)
Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (100) beta-Ga2O3 thin films using in-situ reflectance spectroscopyT. S. Chou, S. Bin Anooz, R. Gruneberg, T. V. T. Tran, J. Rehm, Z. Galazka, and A. PoppJournal of Crystal Growth 603 (2023)
Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown beta-Ga2O3 films for vertical device applicationT. S. Chou, P. Seyidov, S. Bin Anooz, R. Grueneberg, M. Pietsch, J. Rehm, T. T. V. Tran, K. Tetzner, Z. Galazka, M. Albrecht, K. Irmscher, A. Fiedler, and A. PoppApplied Physics Letters 122 (5) (2023)
High-mobility 4 μm MOVPE-grown (100) beta-Ga2O3 film by parasitic particles suppressionT. S. Chou, P. Seyidov, S. Bin Anooz, R. Grueneberg, J. Rehm, T. T. V. Tran, A. Fiedler, K. Tetzner, Z. Galazka, M. Albrecht, and A. PoppJapanese Journal of Applied Physics 62 (SF) (2023)
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit DeviceC. Corley-Wiciak, C. Richter, M. H. Zoellner, I. Zaitsev, C. L. Manganelli, E. Zatterin, T. U. Schulli, A. A. Corley-Wiciak, J. Katzer, F. Reichmann, W. M. Klesse, N. W. Hendrickx, A. Sammak, M. Veldhorst, G. Scappucci, M. Virgilio, and G. CapelliniAcs Applied Materials & Interfaces 15 (2), 3119-3130 (2023)
Goethite Mineral Dissolution to Probe the Chemistry of Radiolytic Water in Liquid-Phase Transmission Electron MicroscopyT. Couasnon, B. Fritsch, M. P. M. Jank, R. Blukis, A. Hutzler, and L. G. BenningAdvanced Science (2023)
Waveguide-integrated silicon T centresA. DeAbreu, C. Bowness, A. Alizadeh, C. Chartrand, N. A. Brunelle, E. R. MacQuarrie, N. R. Lee-Hone, M. Ruether, M. Kazemi, A. T. K. Kurkjian, S. Roorda, N. V. Abrosimov, H. J. Pohl, M. L. W. Thewalt, D. B. Higginbottom, and S. SimmonsOptics Express 31 (9), 15045-15057 (2023)
A Guideline to Mitigate Interfacial Degradation Processes in Solid-State Batteries Caused by Cross DiffusionM. M. U. Din, L. Ladenstein, J. Ring, D. Knez, S. Smetaczek, M. Kubicek, M. Sadeqi-Moqadam, S. Ganschow, E. Salagre, E. G. Michel, S. Lode, G. Kothleitner, I. Dugulan, J. G. Smith, A. Limbeck, J. Fleig, D. J. Siegel, G. J. Redhammer, and D. RettenwanderAdvanced Functional Materials (2023)
Shallow donor impurity of bismuth in silicon: Peculiar electrical properties of bismuth-related defects produced by electron irradiationV. Emtsev, N. Abrosimov, V. Kozlovski, G. Oganesyan, and D. PoloskinJournal of Applied Physics 134 (2) (2023)
Interactions of hydrogen atoms with boron and gallium in silicon crystals co-doped with phosphorus and acceptorsT. O. A. Fattah, V. P. Markevich, D. Gomes, J. Coutinho, N. V. Abrosimov, I. D. Hawkins, M. P. Halsall, and A. R. PeakerSolar Energy Materials and Solar Cells 259 (2023)
Self-stabilization of the equilibrium state in ferroelectric thin filmsP. Gaal, D. Schmidt, M. Khosla, C. Richter, P. Boesecke, D. Novikov, M. Schmidbauer, and J. SchwarzkopfApplied Surface Science 613 (2023)
Bulk single crystals and physical properties of beta-(AlxGa1-x)2O3 (x=0-0.35) grown by the Czochralski methodZ. Galazka, A. Fiedler, A. Popp, S. Ganschow, A. Kwasniewski, P. Seyidov, M. Pietsch, A. Dittmar, S. B. Anooz, K. Irmscher, M. Suendermann, D. Klimm, T. S. Chou, J. Rehm, T. Schroeder, and M. BickermannJournal of Applied Physics 133 (3) (2023)
On-demand electrical control of spin qubitsW. Gilbert, T. Tanttu, W. H. Lim, M. K. Feng, J. Huang, J. D. Cifuentes, S. Serrano, P. Mai, R. C. C. Leon, C. C. Escott, K. M. Itoh, N. V. Abrosimov, H. J. Pohl, M. L. W. Thewalt, F. E. Hudson, A. Morello, A. Laucht, C. H. Yang, A. Saraiva, and A. S. DzurakNature Nanotechnology 18 (2), 131-+ (2023)
Strain Relaxation of Si/SiGe Heterostructures by a Geometric Monte Carlo ApproachK. P. Gradwohl, C. H. Lu, Y. J. Liu, C. Richter, T. Boeck, J. Martin, and M. AlbrechtPhysica Status Solidi-Rapid Research Letters 17 (6) (2023)
Efficient diameter enlargement of bulk AlN single crystals with high structural qualityC. Hartmann, M. P. Kabukcuoglu, C. Richter, A. Klump, D. Schulz, U. Juda, M. Bickermann, D. Hanschke, T. Schroder, and T. StraubingerApplied Physics Express 16 (7) (2023)
Fanout periodic poling of BaMgF4 crystalsS. J. Herr, H. Tanaka, I. Breunig, M. Bickermann, and F. KuhnemannOptical Materials Express 13 (8), 2158-2164 (2023)
Electrical properties and temperature stability of Li-deficient and near stoichiometric Li(Nb,Ta)O3 solid solutions up to 900°CS. Hurskyy, U. Yakhnevych, C. Kofahl, E. Tichy-Racs, H. Schmidt, S. Ganschow, H. Fritze, and Y. SuhakSolid State Ionics 399 (2023)
Thermally activated increase of the average grain size as the origin of resistivity enhancement in NbO2 films grown by pulsed-laser depositionN. Jaber, J. Feldl, J. Stoever, K. Irmscher, M. Albrecht, M. Ramsteiner, and J. SchwarzkopfPhysical Review Materials 7 (1) (2023)
Topological phases in polar oxide nanostructuresJ. Junquera, Y. Nahas, S. Prokhorenko, L. Bellaiche, J. Iniguez, D. G. Schlom, L. Q. Chen, S. Salahuddin, D. A. Muller, L. W. Martin, and R. RameshReviews of Modern Physics 95 (2) (2023)