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Determination of Gallium Concentration in Silicon from Low-Temperature Photoluminescence AnalysisT. O. A. Fattah, J. Jacobs, V. P. Markevich, N. V. Abrosimov, I. D. Hawkins, M. P. Halsall, I. F. Crowe and A. R. PeakerSolar Rrl(4), (2024)
Growth, characterization, and efficient laser operation of Czochralski- and micro-pulling-down-grown Yb3+:YScO3 mixed sesquioxidesS. Kalusniak, A. Uvarova, I. Arlt, L. Hülshoff, P. Eckhof, P. Wegener, M. Bruetzam, S. Ganschow, H. Guguschev, H. Tanaka and C. KränkelOptical Materials Express(2), (2024) 304-318
14.1 W continuous-wave dual-end diode-pumped Er:Lu2O3 laser at 2.85μmY. Y. Liang, T. Li, B. T. Zhang, J. L. He, S. Kalusniak, X. Zhao and C. KränkelChinese Optics Letters(1), (2024)
Advancing the precision of thermal Hall measurements for novel materials researchD. Kojda, I. Sigusch, B. Klemke, S. Gerischer, K. Kiefer, K. Fritsch, C. Guguschev and K. HabichtMaterials & Design(2024)
Comparative Raman spectroscopy of astrobiology relevant bio-samples and planetary surface analogs under UV-VIS-IR excitationF. Hanke, U. Böttger, A. Pohl, K. Irmscher and S. G. PavlovJournal of Raman Spectroscopy(1), (2024) 26-42
Electron Spin Resonance of Lithium Related Donor Centers in Bulk Si1-xGex Crystals Enriched in 28Si and 72Ge IsotopesE. A. Kalinina, D. V. Guseinov, A. V. Soukhorukov, A. A. Ezhevskii, D. G. Zverev, F. F. Murzakhanov and N. V. AbrosimovApplied Magnetic Resonance2024)
Geochemical behavior of heavy metals and radionuclides in a pit lake affected by acid mine drainage (AMD) in the Muskau Arch (Poland)I. Sekudewicz, M. Syczewski, J. Rohovec, S. Matousková, U. Kowalewska, R. Blukis, W. Geibert, I. Stimac and M. GasiorowskiScience of the Total Environment(2024)
Graphene binding on black phosphorus enables high on/off ratios and mobilityF. R. Lin, Z. H. Cao, F. P. Xiao, J. W. Liu, J. B. Qiao, M. M. Xue, Z. L. Hu, Y. Liu, H. Lu, Z. H. Zhang, J. Martin, Q. J. Tong, W. L. Guo and Y. P. LiuNational Science Review(2), (2024)
Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy (vol 11, 111113,2023)S. Raghuvansy, J. P. McCandless, M. Schowalter, A. Karg, M. Alonso-Orts, M. S. Williams, C. Tessarek, S. Figge, K. Nomoto, H. G. Xing, D. G. Schlom, A. Rosenauer, D. Jena, M. Eickhoff and P. VogtApl Materials(1), (2024)
Hydrogen Diffusion in Li(Nb,Ta)O3 Single Crystals Probed by Infrared Spectroscopy and Secondary Ion Mass SpectrometryC. Kofahl, L. Dörrer, H. Wulfmeier, H. Fritze, S. Ganschow and H. SchmidtChemistry of Materials(3), (2024) 1639-1647
Improved Single-Shot Qubit Readout Using Twin rf-SET Charge CorrelationsS. Serrano, M. K. Feng, W. H. Lim, A. E. Seedhouse, T. Tanttu, W. Gilbert, C. C. Escott, N. V. Abrosimov, H. J. Pohl, M. L. W. Thewalt, F. E. Hudson, A. Saraiva, A. S. Dzurak and A. LauchtPrx Quantum(1), (2024)
Lifting the fog in ferroelectric thin-film synthesisL. W. Martin, J. P. Maria and D. G. SchlomNature Materials2024)
Growth and martensitic transformation of ferromagnetic Co-Cr-Ga-Si epitaxial filmsY. R. Ge, K. Lünser, F. Ganss, P. Gaal, L. Fink and S. FählerScience and Technology of Advanced Materials(1), (2023)
High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and galliumT. O. A. Fattah, J. Jacobs, V. P. Markevich, N. Abrosimov, M. P. Halsall, I. F. Crowe and A. R. PeakerJournal of Science-Advanced Materials and Devices(4), (2023)
Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC MethodX. Tang, G. K. Chappa, L. Vieira, M. Holena and N. DropkaCrystals(12), (2023)
Electronic Synapses Enabled by an Epitaxial SrTiO3-δ / Hf0.5Zr0.5O2 Ferroelectric Field-Effect Memristor Integrated on SiliconN. Siannas, C. Zacharaki, P. Tsipas, D. J. Kim, W. Hamouda, C. Istrate, L. Pintilie, M. Schmidbauer, C. Dubourdieu and A. DimoulasAdvanced Functional Materials2023)
Enhanced TC in SrRuO3/DyScO3(110) thin films with high residual resistivity ratioN. J. Schreiber, L. Miao, H. P. Nair, J. P. Ruf, L. Bhatt, Y. A. Birkholzer, G. N. Kotsonis, L. F. Kourkoutis, K. M. Shen and D. G. SchlomApl Materials(11), (2023)
Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approachesT. S. Chou, J. Rehm, S. Bin Anooz, O. Ernst, A. Akhtar, Z. Galazka, W. Miller, M. Albrecht, P. Seyidov, A. Fiedler and A. PoppJournal of Applied Physics(19), (2023)
Growth of β-Ga2O3 and (sic)/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxyS. Raghuvansy, J. P. McCandless, M. Schowalter, A. Karg, M. Alonso-Orts, M. S. Williams, C. Tessarek, S. Figge, K. Nomoto, H. G. Xing, D. G. Schlom, A. Rosenauer, D. Jena, M. Eickhoff and P. VogtApl Materials(11), (2023)
Parametric numerical study of dislocation density distribution in Czochralski-grown germanium crystalsA. Sabanskis, K. Dadzis, K. P. Gradwohl, A. Wintzer, W. Miller, U. Juda, R. R. Sumathi and J. VirbulisJournal of Crystal Growth(2023)