Leibniz-Institut für Kristallzüchtung

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Efficient spin transport across a disordered interface in a low damping magnetic insulator/heavy metal bilayer.Alaei, S. P.; Raj, R.; Channa, S.; Takana, L.; O'Mahoney, D.; Zheng, X. Y.; Fleck, E. E.; Chen, T. Y.; Galazka, Z.; Kent, A. D.; Mkhoyan, K. A.; Suzuki, Y.,Applied Physics Letters;(2025), 262403

Toward a Universal Czochralski Growth Model Leveraging Data-Driven Techniques.Dropka, N.; Petkovic, M.; Frank-Rotsch, C.; Linke, D.; Holena, M.,Advanced Theory and Simulations;(2025),

Unravelling the oxygen influence in cubic bixbyite In2O3 on Raman active phonon modes by isotope studies.Feldl, J.; Gillen, R.; Maultzsch, J.; Papadogianni, A.; Kler, J.; Galazka, Z.; Bierwagen, O.; Ramsteiner, M.,Journal of Materials Chemistry C;(2025), 23545-23553

Demonstration of Advanced Timing Schemes in Time-Resolved X-ray Diffraction Measurements.Schmidt, D.; von Stetten, D.; Agthe, M.; Hensel, D.; Pearson, A. R.; Beddard, G. S.; Yorke, B. A.; Tellkamp, F.; Gaal, P.,Acs Omega;(2025), 57703-57710

Erratum: "Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy" APL Mater. 13, 101117 (2025).Steele, J.; Chen, J.; Burrell, T.; Pieczulewski, N. A.; Bhattacharya, D.; Smith, K.; Gann, K.; Thompson, M. O.; Xing, H. G.; Jena, D.; Muller, D. A.; Williams, M. D.; Senevirathna, M. K. I.; Schlom, D. G.,Apl Materials;(2025), 129901

Al composition dependence of band alignment in NiO/(AlxGa1-x)2O3 heterojunctions.Wan, H. H.; Ren, F.; Chou, T. S.; Anooz, S. B.; Pearton, S. J.,Journal of Vacuum Science & Technology A;(2025), 063415

Single-crystalline BaTiO3-based ferroelectric capacitive memory via membrane transfer.Zhang, X. Y.; Lee, S. H.; Ryu, J. E.; Suh, J. M.; Kim, T. H.; Barone, M. R.; Parker, N. A.; Lee, G. H.; Kim, I. J.; Yeo, I. J. E.; Shin, J.; Lee, J. S.; Schlom, D. G.; Chang, C. S.; Seo, J. S.; Yu, S. M.; Song, M. K.; Kim, J.,Science Advances;(2025), eadz2553

Current Status of Bulk β-Ga2O3 and β-(AlxGa 1-x )2O3 Crystal Growth.Galazka, Z.,Ieee Transactions on Semiconductor Manufacturing;(2025), 796-802

Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga2O3 Schottky diodes.Hensling, F. V. E.; Parzyck, C. T.; Cromer, B.; Al Mamun, M. A.; Suyolcu, Y. E.; Kalaydjian, L.; Subedi, I.; Park, J.; Azizie, K.; Song, Q.; Van Aken, P. A.; Podraza, N. J.; Cho, K.; Jena, D.; Xing, H. G.; Shen, K. M.; Schlom, D. G.; Vogt, P.,Apl Materials;(2025), 111108

Broadband light emission from GaAsP and GaInP islands grown on silicon nanotip wafer via nanoheteroepitaxy.Kafi, N.; Rodrigues, A.; Häusler, I.; Ma, H. R.; Netzel, C.; Hammud, A.; Skibitzki, O.; Schmidbauer, M.; Hatami, F.,Applied Physics Letters;(2025), 191106

Leveraging Transfer Learning to Overcome Data Limitations in Czochralski Crystal Growth.Petkovic, M.; Dropka, N.; Tang, X.; Zittel, J.,Advanced Theory and Simulations;(2025),

Machine learning in crystal growth: A review of methods, data, and applications.Petkovic, M.; Vieira, L.; Dropka, N.,Progress in Crystal Growth and Characterization of Materials;(2025), 100689

Power-scaling of a 3 μm Er:Lu2O3 laser via amplification of injected 1.6 μm laser radiation.Xiao, L.; Song, Z. L.; Li, T.; Yin, Y. R.; Liang, Y. Y.; Kränkel, C.,Optics Express;(2025), 46764-46776

Controlling the p-type conductivity of α-SnO thin films by potassium doping.Chae, S.; Lee, S. M.; Park, A.; Senevirathna, M. K. I.; Feng, Y. F.; Kanneboina, V.; Ha, V. A.; Hu, Y. Q.; Du, C. J.; Barone, M.; Protasenko, V.; Li, Y. E.; Podraza, N.; Johnson, K.; Jena, D.; Xing, H. G.; Pan, X. Q.; Cho, K.; Giustino, F.; Williams, M. D.; Schlom, D. G.,Apl Materials;(2025), 101114

Comparative Study of Residual Stress and Defects in Single-Crystalline (0001) AlN Wafers by Scanning Infrared Depolarization and White-Beam X-ray Topography.Herms, M.; Kabukcuoglu, M. P.; Hartmann, C.; Stöhr, M.; Wagner, M.; Hamann, E.; Hänschke, D.; Richter, C.; Straubinger, T.,Physica Status Solidi a-Applications and Materials Science;(2025),

Hydrogen and lithium tracer diffusivities as a function of hydrogen concentration in Li(Nb,Ta)O3 single crystals.Kofahl, C.; Dörrer, L.; Ganschow, S.; Wulfmeier, H.; Fritze, H.; Schmidt, H.,Solid State Ionics;(2025), 116968

How does picosecond structural deformation of (Ba,Sr)TiO3 relate to the pyroelectric effect?Schmidt, D.; Wawra, J.; Hensel, D.; Brede, M.; Hühne, R.; Gaal, P.,Journal of Alloys and Compounds;(2025), 183792

Strained-Induced Morphological Reconstruction of RuO2(110) Thin-Film Electrocatalysts.Som, J.; Reese, A. J.; Mitrovic, L.; Kim, R. S.; McBride, S.; Nalawade, S. S.; Aravamudhan, S.; Hautier, G.; Yano, J.; Schlom, D. G.; Suntivich, J.,Journal of the American Chemical Society;(2025), 37115-37122

Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy.Steele, J.; Chen, J. L. N.; Burrell, T.; Pieczulewski, N. A.; Bhattacharya, D.; Smith, K.; Gann, K.; Thompson, M. O.; Xing, H. G.; Jena, D.; Muller, D. A.; Williams, M. D.; Senevirathna, M. K. I.; Schlom, D. G.,Apl Materials;(2025), 101117

In situ nanometer-resolution strain and orientation mapping for gas-solid reactions via precession-assisted four-dimensional scanning transmission electron microscopy.Sun, Y. W.; Han, Y.; Zhou, D.; Galanis, A. S.; Gomez-Perez, A.; Wang, K.; Nicolopoulos, S.; Pérez-Garza, H.; Yang, Y.,Nano Today;(2025), 102784

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