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23.5% Efficiency GaAs Solar Cells Fabricated with Low-cost, Non-vacuum ProcessingP. R. Jahelka, H. A. Atwater, A. Ptak, C. Frank-Rotsch, F. Kiessling, C. Went, M. Kelzenberg,2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)
Wüstite (Fe1-xO) – Thermodynamics and crystal growthM. Hamada, S. Ganschow, D. Klimm, G. Serghiou, H.-J. Reichmann and M. BickermannZeitschrift für Naturforschung B, 71, (2022)
Preparation of Single-Crystal Isotopically Enriched 70 Ge by a Hydride MethodV. A. Gavvaa, O. Yu. Troshin, S. A. Adamchik, A. Yu. Lashkov, N. V. Abrosimov, A. M. Gibin, P. A. Otopkova, A. Yu. Sozin, and A. D. BulanovInorganic Materials volume 58, pages246–251 (2022)
Adjustment of resistivity for phosphorus-doped n-type multicrystalline siliconI. Buchovska, K. Dadzis, N. Dropka, F. M. KiesslingSolar Energy Materials & Solar Cells 248 (2022) 111989
Modulation of Spin Dynamics in 2D Transition-Metal Dichalcogenide via Strain-Driven Symmetry BreakingT. Liu, D. Xiang, H. Kuan Ng, Z. Han, K. Hippalgaonkar, A. Suwardi, J. Martin, S. Garaj, and J. WuAdv. Sci, (2022), 2200816
FAIR data enabling new horizons for materials researchM. Scheffler, M. Aeschlimann, M.Albrecht, T. Bereau, H.-J. Bungartz, C. Felser, M. Greiner, A. Groß, C. Koch, K. Kremer, W. E. Nagel, M. Scheidgen, C. Wöll, and C. DraxlNature, 604, p. 635–642 (2022)
Metal-assisted chemically etched silicon nanopillars hosting telecom photon emittersM. Hollenbach, N. S. Jagtap, C. Fowley, et al.J. Appl. Phys. 132, 033101 (2022)
Rare-earth doped mixed sesquioxides for ultrafast lasersC. Kränkel, A. Uvanova, C. Guguschev, S. Kalusniak, L. Hülshoff, H. Tanaka, and D. KlimmOptical Materials Express, 12, (2022), 3
On Thermodynamic Aspects of Oxide Crystal GrowthD. Klimm, and N. WolffAppl. Sci., 12, (2022), 2774
Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defectsV. Emtsev, N. Abrosimov, V. Kozlovski, et al.J. Appl. Phys. 131, (2022), 125705
Mid-infrared emission properties of the Tm3+-doped sesquioxide crystals Y2O3, Lu2O3, Sc2O3 and mixed compounds (Y,Lu,Sc)2O3 around 1.5-, 2- and 2.3-µmR. Moncorgé, Y. Guyot, C. Kränkel, K. Lebbou, and A. YoshikawaJournal of Luminescence 241, (2022), 118537
Interface Shape under the Insulating Baffle in Vertical Bridgman SystemsN. Dropka, and Aleksandar G. OstrogorskyCryst. Res. Technol. (2022), 2100251
Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride LayersL. Matiwe, C. Hartmann, L.Cancellara, M. Bickermann, A. Klump, J. Wollweber, S. Hagedorn, M. Weyers, and T. StraubingerPhys. Status Solidi A (2022), 2100707
Morphogenesis of Liquid Indium Microdroplets on Solid Molybdenum Surfaces during Solidification at Normal Pressure and under Vacuum ConditionsO. C. Ernst, K. Böttcher, D. Fischer, D. Uebel, T. Teubner, and T. BoeckLangmuir, 38, (2022), 762−768
Solid-state laser cooling in Yb:CaF2 and Yb:SrF2 by anti-Stokes fluorescenceS. Püschel, F. Mauerhoff, C. Kränkel, and H. TanakaOptics Letters, 47, (2022), 2
Spectroscopic properties of Tb3+ as an ion for visible lasersS. Kalusniak, E. Castellano-Hernández, H. Yalçinoğlu. H. Tanaka, and C. KränkelAppl. Phys. B 128, (2022), 33
Controllable dynamic single- and dual-channel graphene-Q-switched operation in a beam-splitter-type Yb:YAG channel waveguideJ. E. Bae, T. Calmano, C. Kränkel, and F. RotermundLas. Phot. Rev., (2022), 202100501
Magnesium-Related Donors in Silicon: State of the ArtY. A. Astrov, L. M. Portsel, V. B. Shuman, A. N. Lodygin, N. V. AbrosimovPhys. Status Solidi A 219 (2022) 2200463
Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimerJ. A. T. de Guzman, V. P. Markevich, Ian D. Hawkins, J.Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, and A. R. PeakerJ. Appl. Phys. 130, (2021), 245703