Leibniz-Institut für Kristallzüchtung

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Femtosecond Tm:Lu₂O₃ Lasers Operating in the Spectral Region Below 2 μmJ. J. Mao, P. Hu, X. Zhou, B. T. Zhang, T. Li, T. L. Feng, J. L. He, C. Krankel, M. Guina and K. J. YangIeee Journal of Selected Topics in Quantum Electronics(3), (2024)

Is Ba₃In₂O₆ a high-T_c superconductor?F. V. E. Hensling, D. Dahliah, M. A. Smeaton, B. Shrestha, Show, C. T. Parzyck, C. Hennighausen, G. N. Kotsonis, G. M. Rignanese, M. R. Barone, Subedi, A. S. Disa, K. M. Shen, B. D. Faeth, A. T. Bollinger, Bozovic, N. J. Podraza, L. F. Kourkoutis, G. Hautier and D. G. SchlomJournal of Physics-Condensed Matter(31), (2024)

Li-diffusion in lithium niobate - tantalate solid solutionsC. Kofahl, S. Ganschow, F. Bernhardt, F. El Azzouzi, S. Sanna, H. Fritze and H. SchmidtSolid State Ionics(2024)

Evolution of the Electrical Conductivity of LiNb_1-xTa_xO₃ Solid Solutions across the Ferroelectric Phase TransformationF. E. El Azzouzi, D. Klimm, A. Kapp, L. M. Verhoff, N. A. Schäfer, S. Ganschow, K. D. Becker, S. Sanna and H. FritzePhysica Status Solidi a-Applications and Materials Science2024)

Influence of Li-Stoichiometry on Electrical and Acoustic Properties and Temperature Stability of Li(Nb,Ta)O₃ Solid Solutions up to 900 °CÉ. Tichy-Rács, S. Hurskyy, U. Yakhnevych, P. Gaczynski, S. Ganschow, H. Fritze and Y. SuhakPhysica Status Solidi a-Applications and Materials Science2024)

Data-Driven Cz-Si Scale-Up under Conditions of Partial SimilarityN. Dropka, K. Böttcher, G. K. Chappa and M. HolenaCrystal Research and Technology2024)

Dielectric function and interband critical points of compressively strained ferroelectric K 0.85 Na 0.15 NbO 3 thin film with monoclinic and orthorhombic symmetryS. Bin Anooz, P. Petrik, Y. K. Wang, D. Mukherjee, M. Schmidbauer and J. SchwarzkopfOptics Express(9), (2024) 15597-15609

Epitaxial growth of α-(Al_xGa_1-x)₂O₃ by suboxide molecular-beam epitaxy at 1 μm/hJ. Steele, K. Azizie, N. Pieczulewski, Y. Kim, S. Mou, T. J. Asel, A. T. Neal, D. Jena, H. G. Xing, D. A. Muller, T. Onuma and D. G. SchlomApl Materials(4), (2024)

Evolution of Graphene Dirac Fermions in Electric Double-Layer Transistors with a Soft BarrierF. R. Lin, J. W. Liu, H. Lu, X. Liu, Y. Liu, Z. L. Hu, P. Lyu, Z. H. Zhang, J. Martin, W. L. Guo and Y. P. LiuAdvanced Functional Materials2024)

In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga₂O₃ thin films on c-plane A₂O₃ via MOVPE processT. S. Chou, S. Bin Anooz, R. Grueneberg, J. Rehm, A. Akhtar, D. Mukherjee, P. Petrik and A. PoppApplied Surface Science(2024)

A High-Temperature Optical Spectroscopy Study of the Fundamental Absorption Edge in the LiNbO₃-LiTaO₃ Solid SolutionP. Gaczynski, Y. Suhak, S. Ganschow, S. Sanna, H. Fritze and K. D. BeckerPhysica Status Solidi a-Applications and Materials Science2024)

Absence of 3a₀ charge density wave order in the infinite-layer nickelate NdNiO₂C. T. Parzyck, N. K. Gupta, Y. Wu, V. Anil, L. Bhatt, M. Bouliane, R. Gong, B. Z. Gregory, A. Luo, R. Sutarto, F. He, Y. D. Chuang, T. Zhou, G. Herranz, L. F. Kourkoutis, A. Singer, D. G. Schlom, D. G. Hawthorn and K. M. ShenNature Materials(4), (2024)

Anisotropy of optical transitions in β-Ga₂O₃ investigated by polarized photoluminescence excitation spectroscopyM. Meissner, N. Bernhardt, F. Nippert, B. M. Janzen, Z. Galazka and M. R. WagnerApplied Physics Letters(15), (2024)

Deflecting Dendrites by Introducing Compressive Stress in Li₇La₃Zr₂O₁₂ Using Ion ImplantationF. Flatscher, J. Todt, M. Burghammer, H. S. Soreide, L. Porz, Y. J. Li, S. Wenner, V. Bobal, S. Ganschow, B. Sartory, R. Brunner, C. Hatzoglou, J. Keckes and D. RettenwanderSmall(12), (2024)

Ferroelectric Hysteresis Measurement in the Lithium Niobate-Lithium Tantalate Single-Crystalline Family: Prospects for Lithium Niobate-TantalateB. Koppitz, S. Ganschow, M. Rüsing and L. M. EngPhysica Status Solidi a-Applications and Materials Science2024)

High-fidelity spin qubit operation and algorithmic initialization above 1 KJ. Y. Huang, R. Y. Su, W. H. Lim, M. K. Feng, B. van Straaten, B. Severin, W. Gilbert, N. D. Stuyck, T. Tanttu, S. Serrano, J. D. Cifuentes, I. Hansen, A. E. Seedhouse, E. Vahapoglu, R. C. C. Leon, N. V. Abrosimov, H. J. Pohl, M. L. W. Thewalt, F. E. Hudson, C. C. Escott, N. Ares, S. D. Bartlett, A. Morello, A. Saraiva, A. Laucht, A. S. Dzurak and C. H. YangNature(8005), (2024)

Impurity-induced enhancement of parity-forbidden optical intracenter transitions of shallow donors in siliconS. G. Pavlov and N. V. AbrosimovMaterials Science in Semiconductor Processing(2024)

Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge₂Sb₂Te₅ electronic synapsesQ. Wang, Y. C. Wang, Y. K. Wang, L. Y. Jiang, J. Y. Zhao, Z. T. Song, J. S. Bi, L. B. Zhao, Z. D. Jiang, J. Schwarzkopf, S. L. Wu, B. Zhang, W. Ren, S. N. Song and G. NiuInfomat2024)

2D Time-Domain Spectroscopy for Determination of Energy and Momentum Relaxation Rates of Hydrogen-Like Donor States in GermaniumT. B. Gill, S. Pavlov, C. S. Kidd, P. Dean, A. D. Burnett, A. Dunn, L. H. Li, N. V. Abrosimov, H. W. Hübers, E. H. Linfield, A. G. Davies and J. R. FreemanAcs Photonics(4), (2024) 1447-1455

Accumulation and removal of Si impurities on β-Ga₂O₃ arising from ambient air exposureJ. P. McCandless, C. A. Gorsak, V. Protasenko, D. G. Schlom, M. O. Thompson, H. G. Xing, D. Jena and H. P. NairApplied Physics Letters(11), (2024)

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