Leibniz-Institut für Kristallzüchtung

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Characterization of 30 76Ge enriched Broad Energy Ge detectors for GERDA Phase IIM. Agostini, A. M. Bakalyarov, E. Andreotti, M. Balata, I. Barabanov, L. Baudis, N. Barros, C. Bauer, E. Bellotti, S. Belogurov, G. Benato, A. Bettini, L. Bezrukov, T. Bode, D. Borowicz, V. Brudanin, R. Brugnera, D. Budjáš, A. Caldwell, C. Cattadori, A. Chernogorov, V. D’Andrea, E. V. Demidova, N. Di Marco, A. Domula, E. Doroshkevich, V. Egorov, R. Falkenstein, K. Freund, A. Gangapshev, A. Garfagnini, C. Gooch, P. Grabmayr, V. Gurentsov, K. Gusev, J. Hakenmüller, A. Hegai, M. Heisel, S. Hemmer, R. Hiller, W. Hofmann, M. Hult, L. V. Inzhechik, J. Janicskó Csáthy, J. Jochum, M. Junker, V. Kazalov, Y. Kermaïdic, T. Kihm, I. V. Kirpichnikov, A. Kirsch, A. Kish, A. Klimenko, R. Kneißl, K. T. Knöpfle, O. Kochetov, V. N. Kornoukhov, V. V. Kuzminov, M. Laubenstein, A. Lazzaro, B. Lehnert, Y. Liao, M. Lindner, I. Lippi, A. Lubashevskiy, B. Lubsandorzhiev, G. Lutter, C. Macolino, B. Majorovits, W. Maneschg, G. Marissens, M. Miloradovic, R. Mingazheva, M. Misiaszek, P. Moseev, I. Nemchenok, K. Panas, L. Pandola, K. Pelczar, A. Pullia, C. Ransom, S. Riboldi, N. Rumyantseva, C. Sada, F. Salamida, M. Salathe, C. Schmitt, B. Schneider, S. Schönert, A.-K. Schütz, O. Schulz, B. Schwingenheuer, O. Selivanenko, E. Shevchik, M. Shirchenko, H. Simgen, A. Smolnikov, L. Stanco, L. Vanhoefer, A. A. Vasenko, A. Veresnikova, K. von Sturm, V. Wagner, A. Wegmann, T. Wester, C. Wiesinger, M. Wojcik, E. Yanovich, I. Zhitnikov, S. V. Zhukov, D. Zinatulina, A. J. Zsigmond, K. Zuber, G. Zuzel European Physical Journal C (2019), Bd. 79, Article 978

Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial β-Ga₂O₃ Grown by MOVPES. Bin Anooz, A. Popp, R. Grüneberg, A. Fiedler, K. Irmscher, R.Schewski, M. Albrecht, Z.Galazka, G. Wagner2019 Compound Semiconductor Week (CSW)

Thermal analysis and crystal growth of doped Nb₂O₅J.Hidde, Christo Guguscheva, Detlef Klimma,Journal of Crystal Growth 509 (2019) 60–65

Investigation of the Nd₂O₃-Lu₂O₃-Sc₂O₃ phase diagram for the preparation of perovskite-type mixed crystals NdLu_1-xSc_xO₃T. Hirsch, Detlef Klimm, Christo Guguschev, Albert Kwasniewski, Steffen GanschowJournal of Crystal Growth 505 (2019) 38–43

Crystal Defect Analysis in AlN Layers Grown by MOVPE on Bulk AlNA. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. BickermannJ. Crystal Growth, 505 (2018) 69-73

The electronic structure of epsilon-Ga₂O₃M. Mulazzi, F. Reichmann, A. Becker, W. M. Klesse, P. Alippi, V. Fiorentini, A. Parisini, M. Bosi, R. FornariAPL Materials 7, 022522 (2019);

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopyG. Niu, P. Calka, P. Huang, S. Sharath, S. Petzold, A.Gloskovskii, K. Fröhlich, Y. Zhao, J. Kang, M. Schubert, F. Bärwolf, W. Ren, Z. -G. Ye, E. Perez, C. Wenger, L. Alff and T. SchroederMaterials Research Letters Volume 7, 2019 - Issue 3, Pages 117-123

Even-Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in SiliconS. G. Pavlov, N. V. Abrosimov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Y. A. Astrov, R. Kh. Zhukavin, V. N. Shastin, K. Irmscher, A. Pohl, H.-W. HübersPhys. Status Solidi B 2019, 256, 1800514

Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter ExcitationR. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. ShastinSemiconductors volume 53, pages1255–1257(2019)

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