Leibniz-Institut für Kristallzüchtung

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Dielectric, piezoelectric and elastic constants of Ca₃TaGa₃Si₂O₁₄ single crystals at elevated temperaturesY. Suhaka, Michal Schulza, Andrei Sotnikovb, Hagen Schmidtb, Steffen Ganschowc, Sergey Sakharovd, and Holger Fritzea Steffen Ganschowc, Sergey Sakharovd, and Holger FritzeaFerroelectrics, 8 537 (2018) 255–263

Thermodynamic Investigation of Ternary Delafossite CrystalsN. Wolff, Klimm, Detlef; Ganschow, Steffen; Siche, DietmarCrystal Research and Technology, Volume54, Issue7 July 2019, 1900036

Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum WellsM. H. Zoellner, Chahine, Gilbert Andre; Lahourcade, Lise; Mounir, Christian; Manganelli, Costanza Lucia; Schulli, Tobias Urs; Schwarz, Ulrich Theodor; Zeisel, Roland; Schroeder, ThomasACS Applied Materials & Interfaces , 2019, 11, 25, 22834–22839

Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in siliconR. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. ThewaltPhysical Review B 99, 195207 (2019)

Indium incorporation in homoepitaxial β- Ga₂O₃ thin films grown by metal organic vapor phase epitaxyS. Bin Anooz, A. Popp, R. Grüneberg, C. Wouters, R. Schewski, M. Schmidbauer, M. Albrecht, A. Fiedler, M. Ramsteiner, D. Klimm, K. Irmscher, Z. Galazka, and G. WagnerJournal of Applied Physics 125, 195702 (2019)

Stabilization of sputtered AlN/sapphire templates during high temperature annealingS. Hagedorn, Walde, S.; Mogilatenko, A.; Weyers, M.; Cancellara, L.; Albrecht, M.; Jaeger, D.Journal of Crystal Growth, Volume 512, 15 April 2019, Pages 142-146

Synthesis and characterization of the novel antiferromagnet LaNiB₃O₇K. M. Powderly, ShuGuo, KarolineStolze, Elizabeth M.Carnicom, R.J.CavaJournal of solid state chemistry, Volume 272, April 2019, Pages 113-117

Decomposition of a Solid Solution of Interstitial Magnesium in SiliconV. B. Shuman, A. N. Lodygin, L. M. Portsel, A. A. Yakovleva, N. V. Abrosimov, Yu. A. AstrovSemiconductors, 2019, Vol. 53, pp. 296–297

Characterization of the Si:Se⁺ Spin-Photon InterfaceA. DeAbreu, Camille Bowness, Rohan J.S. Abraham, Alzbeta Medvedova, Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L.W. Thewalt, and Stephanie SimmonsPhys. Rev. Applied 11, 044036

Cross sections and transition intensities of Tb³⁺ in KY(WO4)₂M. Demesh, A. Mudryi, A. Pavlyuk, E. Castellano-Hernández, C. Kränkel, and N. KuleshovOSA Continuum Vol. 2, Issue 4, pp. 1378-1385 (2019)

A novel 3D printed radial collimator for x-ray diffraction S. Kowarik, L. Bogula, S. Boitano, F. Carlà, H. Pithan, P. Schäfer, H. Wilming, A. Zykov, and L. Pithan4Review of Scientific Instruments 90, 035102 (2019)

Simulation of grain evolution in solidification of silicon on meso-scopic scaleX. Qi, Lijun Liub, Thècle Riberi-Béridot, Nathalie Mangelinck-Noël, Wolfram MillerComputational Materials Science 159 (2019) 432–439

Longitudinal phonon plasmon mode coupling in β-Ga₂O₃M. Schubert, A. Mock, R.Korlacki, S. Knight, Z. Galazka, G. Wagner, V. Wheeler, M. Tadjer, K. Goto, V. DarakchievaAppl. Phys. Lett. 114, 102102 (2019)

High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer sourceM. Wienold, S. G. Pavlov, N. V. Abrosimov, H.-W. HübersAppl. Phys. Lett. 114, 092103 (2019);

Modeling anisotropic shape evolution during Czochralski growth of oxide single crystalsM. wienold, Pavlov, S. G.; Abrosimov, N. V.; Huebers, H. -W.Appl. Phys. Lett. 114, 092103 (2019)

Static Dielectric Constant of ß-Ga₂O₃ Perpendicular to the Principal Planes (100), (010), and (001)A. Fiedler, R. Schewski, Z. Galazka, and K. IrmscherECS Journal of Solid State Science and Technology, 8 (7) Q3083-Q3085 (2019)

Cooperative effects of strain and electron correlation in epitaxial VO₂ and NbO₂W.-C. Lee, Matthew J. Wahila, Shantanu Mukherjee, Christopher N. Singh, Tyler Eustance, Anna Regoutz, H. Paik, Jos E. Boschker, Fanny Rodolakis, Tien-Lin Lee, D. G. Schlom, and Louis F. J. PiperJournal of Applied Physics 125, 082539 (2019)

Temperature dependence of the Seebeck coefficient of epitaxial β-Ga₂O₃ thin filmsJ. Boy, M. Handwerg, R.Ahrling , R. Mitdank, G. Wagner, Z. Galazka, S. F. FischerAPL Mater. 7, 022526 (2019)

The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline siliconI. Buchovska, Natasha Dropka, Stefan Kayser, Frank M.KiesslingJournal of Crystal Growth 507 (2019) 299–306

ß-Ga₂O₃:Ce as a fast scintillator: An unclear role of ceriumW. Drozdowski, Michał Makowski, Marcin E. Witkowski, Andrzej J. Wojtowicz, Zbigniew Galazka, Klaus Irmscher, Robert SchewskiRadiation Measurements 121 (2019) 49–53

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