Morphogenesis of Liquid Indium Microdroplets on Solid Molybdenum Surfaces during Solidification at Normal Pressure and under Vacuum ConditionsO. C. Ernst, K. Böttcher, D. Fischer, D. Uebel, T. Teubner, and T. BoeckLangmuir, 38, (2022), 762−76801-2022
Solid-state laser cooling in Yb:CaF2 and Yb:SrF2 by anti-Stokes fluorescenceS. Püschel, F. Mauerhoff, C. Kränkel, and H. TanakaOptics Letters, 47, (2022), 201-2022
Spectroscopic properties of Tb3+ as an ion for visible lasersS. Kalusniak, E. Castellano-Hernández, H. Yalçinoğlu. H. Tanaka, and C. KränkelAppl. Phys. B 128, (2022), 33 01-2022
Controllable single- and dual-channel graphene-Q-switched operation in a beam-splitter-type Yb:YAG channel waveguideJ. E. Bae, T. Calmano, C. Kränkel, and F. RotermundLas. Phot. Rev., (2022), 20210050101-2022
Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimerJ. A. T. de Guzman, V. P. Markevich, Ian D. Hawkins, J.Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, and A. R. PeakerJ. Appl. Phys. 130, (2021), 24570312-2021
Toward precise n-type doping control in MOVPE grown β-Ga2O3 thin films by deep learning approachT. Chou, S. B. Anooz, R. Grüneberg, K. Irmscher, N. Dropka, J. Rehm, T. V.Tran, W. Miller, P. Seyidov, M. Albrecht, A. PoppCrystals 12(2022) 8-1912-2021
Ge(001) surface reconstruction with Sn impuritiesK. Noatschk, E.V.S. Hofmann, J. Dabrowski, N.J. Curson, T. Schroeder, W.M. Klesse, G. SeiboldSurface Science, 713, (2021), 12191211-2021
Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in siliconS. G. Pavlov, L. M. Portsel, V. B. Shuman, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. A. Lynch, V. V. Tsyplenkov, and H.-W. HübersPhysical Review Materials, 5, (2021) 11460711-2021
Resonant boron acceptor states in semiconducting diamondS. G. Pavlov, D. D. Prikhodko, S. A. Tarelkin, V. S. Bormashov, N. V. Abrosimov, M. S. Kuznetsov, S. A. Terentiev, S. A. Nosukhin, S. Yu. Troschiev, V. D. Blank, and H.-W. HübersPhysical Review B 104, (2021), 15520110-2021
A proof of concept of the bulk photovoltaic effect in non-uniformly strained siliconC. L. Manganelli, S. Kayser and M. VirgilioJ. Appl. Phys. 131, (2022), 12570610-2021
Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline SiliconJoyce Ann T. De Guzman,* Vladimir P. Markevich, José Coutinho, Nikolay V. Abrosimov, Matthew P. Halsall, and Anthony R. PeakerSol. RRL (2021), 210045909-2021
Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystalsD. Klimm, B. Szczefanowicz, N. Wolff, M. BickermannJournal of Thermal Analysis and Calorimetry (2022) 147:7133–713909-2021
Czochralski growth of mixed cubic sesquioxide crystals in the ternary system Lu2O3–Sc2O3–Y2O3C. Kränkel, A. Uvarova, É. Haurat, L. Hülshoff, M. Brützam, C. Guguschev, S. Kalusniak, and D. KlimmActa Cryst. B, 77, (2021), 23786-2379808-2021
Investigation on the optical nonlinearity of the layered magnesium-mediated metal organic framework (Mg-MOF-74)Y. Liang, W. Qiao, T. Feng, B. Zhang, Y. Zhao, Y. Song, T. Li, and C. KränkelOptics Express, 29, (2021), 23786-2379807-2021
Assessing doping inhomogeneities in GaAs crystal via simulations of lateral photovoltage scanning methodS. Kayser, N. Rotundo, N. Dropka, and P. FarrellJournal of Crystal Growth, 571, (2021), 12624807-2021
The Features of Infrared Absorption of Boron-Doped SiliconLyudmila Khirunenko, Mikhail Sosnin, Andrei Duvanskii, Nikolai Abrosimov, and Helge RiemannPhys. Status Solidi A, 218, (2021), 210018107-2021
Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level TrapsJoyce Ann T. De Guzman, Vladimir P. Markevich, Ian D. Hawkins, Hussein M. Ayedh, José Coutinho, Jeff Binns, Robert Falster, Nikolay V. Abrosimov, Iain F. Crowe, Matthew P. Halsall, and Anthony R. PeakerPhys. Status Solidi A, 218, (2021), 210010807-2021
Is Reduced Strontium Titanate a Semiconductor or a Metal?C. Rodenbücher, C. Guguschev, C. Korte, S. Bette, and K. SzotCrystals, 11, (2021), 74406-2021
Melt Growth and Physical Properties of Bulk LaInO3 Single CrystalsZ. Galazka, K. Irmscher, S. Ganschow, M. Zupancic, W. Aggoune, C. Draxl, M. Albrecht, D. Klimm, A. Kwasniewski, T. Schulz, M.Pietsch, A. Dittmar, R. Grueneberg, U. Juda, R. Schewski, S. Bergmann, H. Cho, K. Char, T. Schroeder, M. BickermannPhys. Status Solidi A (2021), 2100016 06-2021