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Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimerJ. A. T. de Guzman, V. P. Markevich, Ian D. Hawkins, J.Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, and A. R. PeakerJ. Appl. Phys. 130, (2021), 245703
Toward precise n-type doping control in MOVPE grown β-Ga2O3 thin films by deep learning approachT. Chou, S. B. Anooz, R. Grüneberg, K. Irmscher, N. Dropka, J. Rehm, T. V.Tran, W. Miller, P. Seyidov, M. Albrecht, A. PoppCrystals 12(2022) 8-19
Ge(001) surface reconstruction with Sn impuritiesK. Noatschk, E.V.S. Hofmann, J. Dabrowski, N.J. Curson, T. Schroeder, W.M. Klesse, G. SeiboldSurface Science, 713, (2021), 121912
Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in siliconS. G. Pavlov, L. M. Portsel, V. B. Shuman, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. A. Lynch, V. V. Tsyplenkov, and H.-W. HübersPhysical Review Materials, 5, (2021) 114607
Resonant boron acceptor states in semiconducting diamondS. G. Pavlov, D. D. Prikhodko, S. A. Tarelkin, V. S. Bormashov, N. V. Abrosimov, M. S. Kuznetsov, S. A. Terentiev, S. A. Nosukhin, S. Yu. Troschiev, V. D. Blank, and H.-W. HübersPhysical Review B 104, (2021), 155201
A proof of concept of the bulk photovoltaic effect in non-uniformly strained siliconC. L. Manganelli, S. Kayser and M. VirgilioJ. Appl. Phys. 131, (2022), 125706
Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline SiliconJoyce Ann T. De Guzman,* Vladimir P. Markevich, José Coutinho, Nikolay V. Abrosimov, Matthew P. Halsall, and Anthony R. PeakerSol. RRL (2021), 2100459
Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystalsD. Klimm, B. Szczefanowicz, N. Wolff, M. BickermannJournal of Thermal Analysis and Calorimetry (2022) 147:7133–7139
Czochralski growth of mixed cubic sesquioxide crystals in the ternary system Lu2O3–Sc2O3–Y2O3C. Kränkel, A. Uvarova, É. Haurat, L. Hülshoff, M. Brützam, C. Guguschev, S. Kalusniak, and D. KlimmActa Cryst. B, 77, (2021), 23786-23798
Investigation on the optical nonlinearity of the layered magnesium-mediated metal organic framework (Mg-MOF-74)Y. Liang, W. Qiao, T. Feng, B. Zhang, Y. Zhao, Y. Song, T. Li, and C. KränkelOptics Express, 29, (2021), 23786-23798
Assessing doping inhomogeneities in GaAs crystal via simulations of lateral photovoltage scanning methodS. Kayser, N. Rotundo, N. Dropka, and P. FarrellJournal of Crystal Growth, 571, (2021), 126248
The Features of Infrared Absorption of Boron-Doped SiliconLyudmila Khirunenko, Mikhail Sosnin, Andrei Duvanskii, Nikolai Abrosimov, and Helge RiemannPhys. Status Solidi A, 218, (2021), 2100181
Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level TrapsJoyce Ann T. De Guzman, Vladimir P. Markevich, Ian D. Hawkins, Hussein M. Ayedh, José Coutinho, Jeff Binns, Robert Falster, Nikolay V. Abrosimov, Iain F. Crowe, Matthew P. Halsall, and Anthony R. PeakerPhys. Status Solidi A, 218, (2021), 2100108
Is Reduced Strontium Titanate a Semiconductor or a Metal?C. Rodenbücher, C. Guguschev, C. Korte, S. Bette, and K. SzotCrystals, 11, (2021), 744
Melt Growth and Physical Properties of Bulk LaInO3 Single CrystalsZ. Galazka, K. Irmscher, S. Ganschow, M. Zupancic, W. Aggoune, C. Draxl, M. Albrecht, D. Klimm, A. Kwasniewski, T. Schulz, M.Pietsch, A. Dittmar, R. Grueneberg, U. Juda, R. Schewski, S. Bergmann, H. Cho, K. Char, T. Schroeder, M. BickermannPhys. Status Solidi A (2021), 2100016
Phase diagrams, superdomains, and superdomain walls in KxNa1-xNbO3 epitaxial thin filmsM.-J. Zhou, B. Wang, A. Ladera, L. Bogula, H.-X. Liu, L.-Q. Chen, C.-W. NanActa Materialia, 215, (2021), 117038
Sub-6 optical-cycle Kerr-lens mode-locked Tm:Lu2O3 and Tm:Sc2O3 combined gain media laser at 2.1 μmA. Suzuki, C. Kränkel, and M. TokurakawaOptics Express, 29, (2021), 19465-19471
AlF3-assisted flux growth of mullite whiskers and their application in fabrication of porous mullite-alumina monolithsA. Abdullayev, D.Klimm, F. Kamutzki, A. Gurlo, M. F. BekheetOpen Ceramics 7, (2021), 100145
Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protonsN. Arutyunov, R. Krause-Rehberg, M. Elsayed, V. Emtsev, N. Abrosimov, G. Oganesyan and V. KozlovskiJournal of Physics: Condensed Matter, 33, (2021), 245702