Leibniz-Institut für Kristallzüchtung

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Local Electronic Structure in AlN Studied by Single-Crystal ²⁷Al and ¹⁴N NMR and DFT CalculationsO. E. O. Zeman, Igor L. Moudrakovski, Carsten Hartmann, Sylvio Indris, Thomas BräunigerMolecules 25(3) (2020) 469

Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped siliconR. Kh. Zhukavin, S. G. Pavlov, N. Stavrias, K. Saeedi, K. A. Kovalevsky, P. J. Phillips, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, N. Deβmann, H.-W. Hübers, V. N. Shastin Journal of Applied Physics 127 (2020) 035706

Relaxation Times and Population Inversion of Excited States of Arsenic Donors in GermaniumR. Kh. Zhukavin, K. A. Kovalevskii, Yu. Yu. Choporova, V. V. Tsyplenkov, V. V. Gerasimov, P. A. Bushuikin, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. N. ShastinJETP Letters 110 (2019) 677–682

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)M. Budde, M.Budde, T. Remmele, C.Tschammer, J. Feldl, P. Franz, J. Lähnemann, Z. Cheng, M. Hanke, M. Ramsteiner, M. Albrecht ,and O. BierwagenJ. Appl. Phys. 127 (2020) 015306

Diode‐Pumped Laser Operation of Tb³⁺:LiLuF₄ in the Green and Yellow Spectral RangeE. Castellano-Hernández, Sascha Kalusniak, Philip W. Metz, Christian KränkelLaser Photon. Rev. 14 (2) (2020), 1900229

Czochralski-grown bulk β-Ga₂O₃ single crystals doped with mono-, di-, tri-, and tetravalent ionsZ. Galazka, Klaus Irmscher, Robert Schewski, Isabelle M. Hanke, Mike Pietsch, Steffen Ganschow, Detlef Klimm, Andrea Dittmar, Andreas Fiedler, Thomas Schröder, Matthias BickermannJournal of Crystal Growth 529 (2020) 125297

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystalsK.-P. Gradwohl, A.N. Danilewsky, M. Roder, M Schmidbauer, J. Janicsko-Csathy, A. Gybin, N. Abrosimov, R.R. SumathiJ. Appl. Cryst. 53 (2020) 880-884

Lithium-Containing Crystals for Light Dark Matter Search ExperimentsE. Bertoldo, A. H. Abdelhameed,G. Angloher, P. Bauer, A. Bento, R. Breier, C. Bucci, L. Canonica, A. D’Addabbo, S. Di Lorenzo, A. Erb, F. V. Feilitzsch, N. Ferreiro Iachellini, S. Fichtinger5 · D. Fuchs1 · A. Fuss5,6 · P. Gorla3 · D. Hauff1 · M. Ješkovský2 · J. Jochum7 · J. Kaizer2 · A. Kinast · H. Kluck · H. Kraus · A. Langenkämper · M. Mancuso · V. Mokina · E. Mondragon · M. Olmi · T. Ortmann · C. Pagliarone · V. Palušová · L. Pattavina · F. Petricca · W. Potzel · P. Povinec · F. Pröbst · F. Reindl · J. Rothe · K. Schäffner · J. Schieck · V. Schipperges · D. Schmiedmayer · S. Schönert · C. Schwertner · M. Stahlberg · L. Stodolsky · C. Strandhagen · R. Strauss · I. Usherov · M. Willers · V. Zema · J. Zeman · The CRESST Collaboration · M. Brützam · S. GanschowJournal of Low Temperature Physics

Electroluminescence of Cr³⁺ and pseudo-Stark effect in β-Ga₂O₃ Schottky barrier diodesA. Fiedler, Z. Galazka , and K. IrmscherJournal of Applied Physics 126, 213104 (2019)

Intracavity second-harmonic pulse generation at 261 and 320 nm with a Pr³⁺:YLF laser Q-switched by a Co²⁺:MgAl₂O₄ spinel saturable absorberS. Fujita, H. Tanaka, and F. KannariOptics Express, Vol. 27, Issue 26, pp. 38134-38146

Carbon Pair Defects in Aluminum NitrideI. Gamov, C. Hartmann, J. Wollweber, A. Dittmar, T. Straubinger, M. Bickermann, I. Kogut, H. Fritze, K. IrmscherJournal of Applied Physics

Electrical conductivity tensor of β-Ga₂O₃ analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundariesCh. Golz, Zbigniew Galazka, Jonas Lähnemann, Vanesa Hortelano, Fariba Hatami, W. Ted Masselink, Oliver BierwagenPhys. Rev. Materials 3, 124604

Single crystal growth and characterization of Ba₂ScNbO₆ – A novel substrate for BaSnO₃ filmsCh. Guguschev, D. Klimm, M. Brützam, T.M. Gesing, M. Gogolin, H. Paik, A. Dittmar, V.J. Fratello, D.G. Schlom,Journal of Crystal Growth 528 (2019) 125263

Electromechanical Losses in Carbon- and Oxygen-Containing Bulk AlN Single CrystalsI. Kogut, C. Hartmann, I. Gamov, Y. Suhak, M. Schulz, S. Schröder, J. Wollweber, A. Dittmar, K. Irmscher, T. Straubinger, M. Bickermann, H. FritzeSolid State Ionics, Volume 343, 15 December 2019, 115072

Targeted chemical pressure yields tuneable millimetre-wave dielectricN. M. Dawley, Eric J. Marksz, Aaron M. Hagerstrom, Gerhard H. Olsen, Megan E. Holtz, Veronica Goian, Christelle Kadlec, Jingshu Zhang, Xifeng Lu, Jasper A. Drisko, Reinhard Uecker, Steffen Ganschow, Christian J. Long, James C. Booth, Stanislav Kamba, Craig J. Fennie, David A. Muller, Nathan D. Orloff and Darrell G. SchlomNature Materials volume 19, pages176–181(2020)

Luminescence and scintillation properties of strontium hafnate and strontium zirconate single crystalsJ. Pejchal, C. Guguschev, M. Schulze, V. Jary, E. Mihokova, K. Rubesova, V. Jakes, J. Barta, M. NiklOptical Materials, Volume 98, December 2019, 109494

Signatures of free carriers in Raman spectra of cubic In₂O₃M. Ramsteiner, Johannes Feldl, Zbigniew GalazkaSemicond. Sci. Technol. 35 (2020) 015017 (5pp)

Optimized photoactive coatings prepared with functionalized TiO₂Y. Treekamoi, Schieda, M., Herrmann-Geppert, I., Klassen, T.Internationa Journal of Hydrogen Energy, Volume 44, Issue 60, 6 December 2019, Pages 31800-31807

Energy-transfer upconversion and excited-state absorption in KGd_xLu_yEr_1-x-y(WO₄)₂ waveguide amplifiersS. A. Vázquez-Cordova, S. Aravazhi, A. M. Heuer, C. Kräünkel, Y. S. Yong, S. M. García-Blanco, J. L. Herek, and M. PollnauOpt. Mater. Express 9 (12), 4782-4795 (2019)

Automated Growth of Si_1-xGe_x Single Crystals with Constant Axial Gradient by Czochralski TechniqueN. Abrosimov, V. N. Kurlov, R. Schewski, and J. WinklerCryst. Res. Technol.

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