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Substrate-orientation dependence of ß-Ga2O3 (100), (010), (001), and (201) homoepitaxy by indium-mediated metalexchange catalyzed molecular beam epitaxy (MEXCAT-MBE)P. Mazzolini, A. Falkenstein , C. Wouters , R. Schewski , T. Markurt, Z. Galazka , M. Martin , M. Albrecht , and O. BierwagenAPL Materials 8 (2020) 011107
Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressureN. V. Morozov, Igor V. Korobeinikov, Nikolay V. Abrosimov, and Sergey V. OvsyannikovCrystEngComm 22 (2020) 5416
Identification of the donor and acceptor states of the bond-centered hydrogen– carbon pair in Si and diluted SiGe alloysR. Stübner, Vl. Kolkovsky, J. Weber , N. V. Abrosimov, C. M. Stanley , D. J. Backlund, and S. K. EstreicherJournal of Applied Physics, Journal of Applied Physics 127 (2020) 045701
Local Electronic Structure in AlN Studied by Single-Crystal 27Al and 14N NMR and DFT CalculationsO. E. O. Zeman, Igor L. Moudrakovski, Carsten Hartmann, Sylvio Indris, Thomas BräunigerMolecules 25(3) (2020) 469
Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped siliconR. Kh. Zhukavin, S. G. Pavlov, N. Stavrias, K. Saeedi, K. A. Kovalevsky, P. J. Phillips, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, N. Deβmann, H.-W. Hübers, V. N. Shastin Journal of Applied Physics 127 (2020) 035706
Relaxation Times and Population Inversion of Excited States of Arsenic Donors in GermaniumR. Kh. Zhukavin, K. A. Kovalevskii, Yu. Yu. Choporova, V. V. Tsyplenkov, V. V. Gerasimov, P. A. Bushuikin, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. N. ShastinJETP Letters 110 (2019) 677–682
Lithium-Containing Crystals for Light Dark Matter Search ExperimentsE. Bertoldo, A. H. Abdelhameed,G. Angloher, P. Bauer, A. Bento, R. Breier, C. Bucci, L. Canonica, A. D’Addabbo, S. Di Lorenzo, A. Erb, F. V. Feilitzsch, N. Ferreiro Iachellini, S. Fichtinger5 · D. Fuchs1 · A. Fuss5,6 · P. Gorla3 · D. Hauff1 · M. Ješkovský2 · J. Jochum7 · J. Kaizer2 · A. Kinast · H. Kluck · H. Kraus · A. Langenkämper · M. Mancuso · V. Mokina · E. Mondragon · M. Olmi · T. Ortmann · C. Pagliarone · V. Palušová · L. Pattavina · F. Petricca · W. Potzel · P. Povinec · F. Pröbst · F. Reindl · J. Rothe · K. Schäffner · J. Schieck · V. Schipperges · D. Schmiedmayer · S. Schönert · C. Schwertner · M. Stahlberg · L. Stodolsky · C. Strandhagen · R. Strauss · I. Usherov · M. Willers · V. Zema · J. Zeman · The CRESST Collaboration · M. Brützam · S. GanschowJournal of Low Temperature Physics
Electroluminescence of Cr3+ and pseudo-Stark effect in β-Ga2O3 Schottky barrier diodesA. Fiedler, Z. Galazka , and K. IrmscherJournal of Applied Physics 126, 213104 (2019)
Carbon Pair Defects in Aluminum NitrideI. Gamov, C. Hartmann, J. Wollweber, A. Dittmar, T. Straubinger, M. Bickermann, I. Kogut, H. Fritze, K. IrmscherJournal of Applied Physics
Electrical conductivity tensor of β-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundariesCh. Golz, Zbigniew Galazka, Jonas Lähnemann, Vanesa Hortelano, Fariba Hatami, W. Ted Masselink, Oliver BierwagenPhys. Rev. Materials 3, 124604
Single crystal growth and characterization of Ba2ScNbO6 – A novel substrate for BaSnO3 filmsCh. Guguschev, D. Klimm, M. Brützam, T.M. Gesing, M. Gogolin, H. Paik, A. Dittmar, V.J. Fratello, D.G. Schlom,Journal of Crystal Growth 528 (2019) 125263
Electromechanical Losses in Carbon- and Oxygen-Containing Bulk AlN Single CrystalsI. Kogut, C. Hartmann, I. Gamov, Y. Suhak, M. Schulz, S. Schröder, J. Wollweber, A. Dittmar, K. Irmscher, T. Straubinger, M. Bickermann, H. FritzeSolid State Ionics, Volume 343, 15 December 2019, 115072
Targeted chemical pressure yields tuneable millimetre-wave dielectricN. M. Dawley, Eric J. Marksz, Aaron M. Hagerstrom, Gerhard H. Olsen, Megan E. Holtz, Veronica Goian, Christelle Kadlec, Jingshu Zhang, Xifeng Lu, Jasper A. Drisko, Reinhard Uecker, Steffen Ganschow, Christian J. Long, James C. Booth, Stanislav Kamba, Craig J. Fennie, David A. Muller, Nathan D. Orloff and Darrell G. SchlomNature Materials volume 19, pages176–181(2020)
Luminescence and scintillation properties of strontium hafnate and strontium zirconate single crystalsJ. Pejchal, C. Guguschev, M. Schulze, V. Jary, E. Mihokova, K. Rubesova, V. Jakes, J. Barta, M. NiklOptical Materials, Volume 98, December 2019, 109494
Signatures of free carriers in Raman spectra of cubic In2O3M. Ramsteiner, Johannes Feldl, Zbigniew GalazkaSemicond. Sci. Technol. 35 (2020) 015017 (5pp)
Optimized photoactive coatings prepared with functionalized TiO2Y. Treekamoi, Schieda, M., Herrmann-Geppert, I., Klassen, T.Internationa Journal of Hydrogen Energy, Volume 44, Issue 60, 6 December 2019, Pages 31800-31807
Energy-transfer upconversion and excited-state absorption in KGdxLuyEr1-x-y(WO4)2 waveguide amplifiersS. A. Vázquez-Cordova, S. Aravazhi, A. M. Heuer, C. Kräünkel, Y. S. Yong, S. M. García-Blanco, J. L. Herek, and M. PollnauOpt. Mater. Express 9 (12), 4782-4795 (2019)
Automated Growth of Si1-xGex Single Crystals with Constant Axial Gradient by Czochralski TechniqueN. Abrosimov, V. N. Kurlov, R. Schewski, and J. WinklerCryst. Res. Technol.
Interface control in vertical Bridgman growth by shaped and flat rotating BafflesN. Dropka, Aleksandar G. OstrogorskyJournal of Crystal Growth