K.J. Morse, Rohan J. S. Abraham,Adam DeAbreu,Camille Bowness,Timothy S. Richards, H. Riemann, N. Abrosimov, P. Becker, H.-J. Pohl, M. Thewalt, S. SimmonsScience Advances Science Advances 26 Jul 2017:
Vol. 3, no. 7, e1700930
T. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, H. Yoshikawa, Y. Yamashita, T. ChikyowApplied Physics Express, 10 (2017) 011102 (1-4)
S. Okur, Gary S. Tompa, Nick Sbrockey, Tom Salagaj, Structured Materials Industries, Inc.; Volker Blank, Bernd Henninger, LayTec; Michele Baldini, Günter Wagner, Zbigniew Galazka, IKZ, Yao Yao, Johanne Rokolt, Robert F. Davids, Lisa M. Porter, Carnegie Mellon University, Abraham Belkind & Assiciates LLCProject: MOCVD growth of Ga2O3 for electronic and optoelectronic devices
L.I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. RiemannPhys. Status Solidi A 214 (2017) 1700245
D. Klimm, C. Guguschev, D. J. Kok, M. Naumann, L. Ackermann, D. Rytz, M. Peltz, K. Dupré, M. D. Neumann, A. Kwasniewski, D. G. Schlom, M. BickermannCrystEngComm 19 (2017) 3908 - 3914
D. Klimm, in: Handbook of Solid State Chemistry
V. V. Kozlovski, A. E. Vasil’ev, V. V. Emtsev, G. A. Oganesyan, N. V. AbrosimovJournal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 11 (2017) 601 - 605
M. Kubicek, A. Wachter-Welzl, D. Rettenwander, R. Wagner, G. Amthauer, H. Hutter, J. FleigChem. Mater., (2017) 7189-7196
F. Labaye, M. Gaponenko, V. J. Wittwer, A. Diebold, C. Paradis, N. Modsching, L. Merceron, F. Emaury, I. J. Graumann, C. R. Phillips, C. J. Saraceno, C. Kränkel, U. Keller, and T. SüdmeyerOptics Letters Vol. 42, Issue 24, pp. 5170-5173 (2017)
K. Lauer, Ch. Möller, Ch. Teßmann, D. Schulze, N. V. AbrosimovPhys. Status Solidi C 14 (2017) 1600033
D. Li, V. Hoffmann, E. Richter, T. Tessaro, Z. Galazka, M. Weyers, G. TränkleJournal of Crystal Growth, 478 (2017) 212 - 215
Y. I. Mazur, V.G. Dorogana, L. Diasa, D. Fanc, M. Schmidbauer, M.E. Warea, Z. Ya. Zhuchenkoe, S. S. Kurlove, G. G. Tarasove, S.-Q. Yuc, G. E. marques, G. J. SalamoaJournal of Luminescence 188 (2017) 209–216
T. Mchedlidze, J. Weber, N. V. Abrosimov, H. RiemannActa Mater.,140 (2017) 411 - 416
D. Meier, G. Lukina, N. Thieme, P. Bönisch, K. Dadzisc, L. Büttnerb, O. Pätzolda, J. Czarskeb, M. StelteraJournal of Crystal Growth 461 (2017) 30–37
R. Menzel, K. Dadzis, N.V. Abrosimov, H. Riemannin: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 215 - 220
K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin Semiconduct 50 (2016) 1673 - 1677
Ch. Guguschev, Dirk J. Kok, Uta Juda, Reinhard Uecker, Sakari Sintonen, Zbigniew Galazka, Matthias BickermannJournal of Crystal Growth 468 (2017) 305–310
B. Heidmann, Franziska Ringleb, Katharina Eylers, Sergiu Levcenco, Jörn Bonse, StefanAndree, JörgKrüger, Thomas Unold, Torsten Boeck, Martha Ch.Lux-Steiner, MartinaSchmidMaterialstoday Energy, Volume 6, December 2017, Pages 238-247
Jos. E. Boschker, Raffaella CalarcoAdvances in Physics:. X , Volume 2, 2017- issue 3, Pages 675-694
S. Kayser, A. Lüdge, K. BöttcherVIII International Scientific Colloquium Modelling for Materials Processing Riga, September 21 - 22, 2017