Leibniz-Institut für Kristallzüchtung

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Numerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single CrystalsK. Böttcher, Wolfram Miller, Steffen GanschowCryst. Res. Technol. 56 (2020) 2000106

Thermoelastic anisotropy in NdScO₃ and NdGaO3 perovskitesC. Hirschle, J. Schreuer, S. Ganschow, L. PetersMaterials Chemistry and Physics 254 (2020) 123528

UV-pumped visible Tb³⁺-lasersS. Kalusniak, H. Tanaka, E. Castellano-Hernandez, AND C. KrankelOptics Letters 45 (22) (2020) 6170-6173

Temperature Dependence of Three-Dimensional Domain Wall Arrangement in Ferroelectric K^0.9Na^0.1NbO³ Epitaxial Thin FilmsM. Schmidbauer, L. Bogula, B. Wang, M. Hanke, L. von Helden, A. Ladera, J.-J. Wang, L.-Q. Chen, and J. SchwarzkopfJ. Appl. Phys. 128, (2020), 184101

Raman scattering in heavily donor doped β- Ga₂O₃A. Fiedler, M. Ramsteiner, Z. Galazka, and K. IrmscherAppl. Phys. Lett. 117 (2020) 152107

Characterization of Mono-Crystalline and Multi-Crystalline Silicon by the Extended Lateral Photovoltage Scanning and Scanning PhotoluminescenceI. Buchovska, Anke Lüdge, Wolfgang Lüdge, and Frank M. KiesslingECS Journal of Solid State Science and Technology 9 (2020) 086001

Extraction of Classification Rules from Sequences of Crystal Growth DataR. Busa, Y. Dauxais, S. Ecklebe, N. Dropka, M. HolenaProceedings of the 20th Conference Information Technologies - Applications and Theory - ITAT 2020, Oravská Lesná, Slovakia,18-22 sept 2020, p.99-105

Behavior of Phosphorus Donors in Bulk Single-Crystal Monoisotopic ²⁸Si_1-x⁷²Ge_x AlloysA. A. Ezhevskii, P. G. Sennikov, D. V. Guseinov, A. V. Soukhorukov, E. A. Kalinina, and N. V. AbrosimovSemiconductors, 54 (9) (2020) 1123–1126

In-plane growth of germanium nanowires on nanostructured Si(001)/SiO₂ substratesF. Lange, Owen Ernst, Thomas Teubner, Carsten Richter, Martin Schmidbauer, Ociler Skibitzki, Thomas Schroeder, Peer Schmidt, and Torsten BoeckNano Futures 4 (2020) 035006

Higher-order Zeeman effect of Mg-related donor complexes in siliconS. G. Pavlov, D. L. Kamenskyi, Yu. A. Astrov, V. B. Shuman, L. М. Portsel, A. N. Lodygin, N. V. Abrosimov, H. Engelkamp, A. Marchese, and H.-W. HübersPHYSICAL REVIEW B 102 (2020) 115205

Suitability of binary oxides for molecularbeam epitaxy source materials: A comprehensive thermodynamic analysisK.-M. Adkinson, Shun-Li Shang, Brandon J. Bocklund, Detlef Klimm, Darrel C. Schlom, and Zi-Kui LiuAPL Materials 8, 081110 (2020)

Aluminium self-diffusion in high-purity a-Al₂O₃: Comparison of Ti-doped and undoped single crystalsP. Fielitz, Steffen Ganschow, Klemens Kelm, Günter BorchardtActa Materialia 195 (2020) 416-424

Investigation of Au droplet formation and growth of Si_xGe_1-x nanowires by molecular beam epitaxyF. Lange, Owen C. Ernst, Thomas Teubner and Torsten BoeckCrystEngComm 22 (2020) 6322

Brillouin zone center phonon modes in ZnGa₂O₄M. Stokey, Rafał Korlacki, Sean Knight, Matthew Hilfiker, Zbigniew Galazka, Klaus Irmscher, Vanya Darakchieva, and Mathias SchubertAppl. Phys. Lett. 117 (2020) 052104

Transition-metal-doped saturable absorbers for passive Q-switching of visible lasersH. Tanaka, Christian Kränkel, and Fumihiko KannariOptical Materials Express 10 (8) (2020) 1827-1842

Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:BiR. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov,N. V. Abrosimov, H. Riemann, H.-W. Hübers, and V.N. ShastinSemiconductors, 54(8) (2020) 969–974

Influence of impurities from SiC and TiC crucible cover on directionally solidified siliconN. Dropka, Iryna Buchovska, Ulrich Degenhardt, Frank M.KiesslingJournal of Crystal Growth 542 (2020) 125692

Semiconductor scintillator development: Pure and doped β-Ga₂O₃W. Drozdowski, Michał Makowski, Marcin E.Witkowski, Andrzej J.Wojtowicz, RobertSchewski, Klaus Irmscher, ZbigniewGalazkaOptical Materials 105 (2020) 109856

Kinetic Monte Carlo model for homoepitaxial growth of Ga₂O₃W. Miller, Dennis Meiling, Robert Schewski, Andreas Popp, Saud Bin Anooz, and Martin AlbrechtPhys. Rev. Research 2 (2020) 033170

GaAs solar cells grown on intentionally contaminated GaAs substratesJ. Simon, Christiane Frank-Rotsch, Karoline Stolze, Matthew Young, Myles A. Steiner, Aaron J. PtakJournal of Crystal Growth 541 (2020) 125668

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