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Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxyA. Fiedler, R. Schewski, M. Baldini, Z. Galazka, G. Wagner, M. Albrecht, K. IrmscherJournal of Applied Physics, 122 (2017) 165701/1 - 165701/7
Aluminium-26 grain boundary diffusion in pure and Y-doped polycrystalline a-aluminaP. Fielitz, K. Kelm, R. Bertram, A. H. Chokshi, G. BorchardtActa Mater. 127 (2017) 302 - 311
Thermal stability of ε-Ga2O3 polymorphR. Fornari, M. Pavesi, V. Montedoro, D. Klimm, F. Mezzadri, I. Cora, B. Pécz, F. Boschi, A. Parisini, A. Baraldi, C. Ferrari, E. Gombia, M. BosiActa Mater. 140 (2017) 411 - 416
Scaling-Up of Bulk ß-Ga2O3 Single Crystals by the Czochralski MethodZ. Galazka, R. Uecker, D. Klimm, K. Irmscher, M. Naumann, M. Pietsch, A. Kwasniewski, R. Bertram, S. Ganschow, M. BickermannECS J Solid State SCI Techn. 6 (2017) Q3007 - Q3011
Melt growth and properties of bulk BaSnO3 single crystalsZ. Galazka, R. Uecker, K. Irmscher, D. Klimm, R. Bertram, A. Kwasniewski, M. Naumann, R. Schewski, M. Pietsch, U. Juda, A. Fiedler, M. Albrecht, S. Ganschow, T. Markurt, C. Guguschev, M. BickermannJ. Phys.: Condens. Matter, " 29 (2017) 075701 "
Peak-power scaling of femtosecond Yb:Lu2O3 thin-disk lasersI. J. Graumann, A. Diebold, C. G. E. Alfieri, F. Emaury, B. Deppe, M. Golling, D. Bauer, D. Sutter, C. Kränkel, C. J. Saraceno, C. R. Phillips, and U. KellerOptics Express Vol. 25, Issue 19, pp. 22519-22536 (2017)
β-Ga2O3 MOSFETs for Radio Frequency OperationA. J. Green, K. D. Chabak, M. Baldini, N. Moser, R.Gilbert, R. C. Fitch, G. Wagner, Z. Galazka, J. McCandless, A. Crespo, K. Leedy, G. H. JessenIEEE Electron Device Letters, Vol.38 (2017) 790 - 793
Czochralski growth and characterization of cerium doped calcium scandateCh. Guguschev, J. Philippen, D. J. Kok, T. Markurt, D. Klimm, K. Hinrichs, R. Uecker, R. Bertram and M. Bickermann CrystEngComm, 2017,19, 2553-2560
Dynamics of non-equilibrium charge carriers in p-germanium doped by galliumN. Deßmann, S. G. Pavlov, V. V. Tsyplenkov, E. E. Orlova, A. Pohl, V. N. Shastin, R. Kh. Zhukavin, S. Winner, M. Mittendorff, J. M. Klopf, N. V. Abrosimov, H. Schneider, H.-W. HübersPhys. Status Solidi B 254 (2017) 1600803
TMF optimization in VGF crystal growth of GaAs by artificial neural networks and Gaussian process modelsN. Dropka, M. Holena, Ch. Frank-Rotschin: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing, Hannover (2017) 203 - 208
Optimization of magnetically driven directional solidification of silicon using artificial neural networks and Gaussian process modelsN. Dropka, M. HolenaJ. Cryst. Growth 471 (2017) 53 – 61
Growth of Silicon on Reorganized Porous Silicon substrates by steady-state solution growth for Photovoltaic ApplicationsC. Ehlers, R. Bansen, D. Uebel, T. Teubner, T. Boeck33rd European Photovoltaic Solar Energy Conference and Exhibition
Solution growth of Si on reorganized porous Si foils and on glass substratesC. Ehlers, R. Bansen, T. Markurt, D. Uebel, Th. Teubner, T. BoeckJ. Cryst. Growth 468 (2017) 268 – 271
In-Ga precursor islands for Cu(In,Ga)Se2 micro-concentrator solar cellsK. Eylers, F. Ringleb, B. Heidmann, S. Levcenco, Th. Unold, H.W. Klemm, G. Peschel, A. Fuhrich, Th. Teubner, Th. Schmidt, M. Schmid, T. BoeckProceedings of the 44th IEEE Photovoltaic Specialists Conference (PVSC), Washington, DC, USA
Passively Q-switched Ho,Pr:LiLuF4 laser with graphitic carbon nitride nanosheet filmM. Q. Fan, T. Li, G. Q. Li, S. Z. Zhao, K. J. Yang, S. Y. Zhang, B. T. Zhang, J. Q. Xu, and C. KränkelOptics Express Vol. 25, Issue 11, pp. 12796-12803 (2017)
Production of germanium stable isotopes single crystalsM. F. Churbanov, V. A. Gavva, A. D. Bulanov, N. V. Abrosimov, E. A. Kozyrev, I. A. Andryushchenko, V. A. Lipskii, S. A. Adamchik, O. Yu. Troshin, A. Yu. Lashkov, A. V. GusevCryst. Res. Technol. 52 (2017) 1700026
Validation, verification, and benchmarking of crystal growth simulationsK. Dadzis, P. Bönisch, L. Sylla, T. RichterJournal of Crytal Growth Volume 474, 2017, Pages 171-177
High-frequency Heat Induction Modeling for a Novel Silicon Crystal Growth MethodMenzel, M. Ziem, T. Turschner, H. Riemann, N.V. AbrosimovVIII International Scientific Colloquium Modelling for Materials Processing Riga 2017
Passively Q-switched Pr:YLF laser with a Co2+:MgAl2O4 saturable absorberM. Demesh, D. Marzahl, A. Yasukevich, V. Kisel, G. Huber, N. Kuleshov, C. KränkelOptics Letters Vol. 42, Issue 22, pp. 4687-4690 (2017)
Combined impact of strain and stoichiometry on the structural and ferroelectric properties of epitaxially grown Na1+xNbO3+δ films on (110) NdGaO3B. Cai, J. Schwarzkopf, C. Feldt, J. Sellmann, T. Markurt, R. WördenweberPhysical Review B, 95 (2017) 184108-1