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Many-Electron Effects on the Dielectric Function of Cubic In2O3: Effective Electron Mass, Band-Nonparabolicity, and Burstein-Moss Shift.A. A. Ezhevskii, M. Feneberg, J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, J.S. SpeckPhys. Rev. B 93 (2016) 045203
Comparison of the Luminous Efficiencies of Ga- and N-Polar InxGa1−xN/InyGa1−yN Quantum Wells Grown by Plasma-Assisted Molecular Beam EpitaxyS. Fernandez-Garrido, Jonas Lähnemann, Christian Hauswald, Maxim Korytov, Martin Albrecht, Caroline Chèze, Czesław Skierbiszewski, Oliver BrandtPhys. Rev. Applied 6, 034017 (2016)
GaAs/GaP Quantum Dots: Ensemble of Direct and Indirect Heterostructures with Room Temperature Optical EmissionS. Dadgostar, J. Schmidtbauer, T. Boeck, A. Torres, O. Martínez, J. Jiménez, J. W. Tomm, A. Mogilatenko, W. T. Masselink, F. HatamiJ. Appl. Phys. LETT 108 (2016) 102103
Epitaxially Grown Monoisotopic Si, Ge, and Si1–x>sub>Gex Alloy Layers: Production and Some Properties.A. P. Detochenko, S.A. Denisov, M.N. Drozdov, A.I. Mashin, V.A. Gavva, A.D. Bulanov, A.V. Nezhdanov, A.A. Ezhevskii, M.V. Stepikhova, V.Yu. Chalkov, V.N. Trushin, D.V. Shengurov, V.G. Shengurov, N.V. Abrosimov, H. RiemannSemiconduct 50 (2016) 345 - 348
Scale up Aspects of Directional Solidification and Czochralski Silicon Growth Processes in Traveling Magnetic Fields.N. Dropka, M. Czupalla, T. Ervik, F.M. KiesslingJ. Cryst. Growth 451 (2016) 95 - 102
Influence of Peripheral Vibrations and Traveling Magnetic Fields on VGF Growth of Sb - Doped Ge CrystalsN. Dropka Ch. Frank-Rotsch, P. Rudolph J. Cryst. Growth 453 (2016) 27 - 33
Large-lattice-parameter perovskite single-crystal substratesR. Uecker, Rainer Bertram, Mario Brützam, Zbigniew Galazka, Thorsten M. Gesing, Christo Guguschev, Detlef Klimm, Michael Klupsch, Albert Kwasniewski, Darrell G. SchlomJournal of Crystal Growth 457 (2017) 137–142
Enhancement-Mode Ga2O3 Wrap-Gate Fin Field-Effect Transistors on Native (100) ß- Ga2O3 Substrate with High Breakdown VoltageK. D. Chabak, N. Moser, A. J. Green, D. E. Walker, Jr.,S. E. Tetlak, E. Heller, A. Crespo, R. Fitch, J. P. Mc Candless, K. Leedy, M. Baldini, G. Wagner, Z. Galazka, X. Li, G. JessenJ. Appl. Phys. LETT 109 (2016) 213501
Impact of Substrate Nitridation on the Growth of InN on In2O3 (111) Byplasma-Assisted Molecular Beam Epitaxy.Y. Cho, S. Sadofeva, S. Fernández-Garridoa, R. Calarcoa, H. Riechert, Z. Galazka, R. Uecker, O. BrandtAppl Surf Sci. 369 (2016) 159 - 162
First terahertz-range experiments on pump – probe setup at Novosibirsk free electron laserY Y. Choporova, Vasily V. Gerasimov, Boris A. Knyazev, Sergey M. Sergeev, Oleg A. Shevchenko , Roman Kh. Zhukavin , Nikolay V. Abrosimov , Konstantin A. Kovalevsky , Vladimir K. Ovchar , Heinz-Wilhelm Hüberse, Gennady N. Kulipanov, Valery N. Shastin , Harald Schneider Nikolay A. VinokurovInternational Conference "Synchrotron and Free electron laser Radiation: generation and application", SFR-2016, 4-8 July 2016, Novosibirsk, Russia Physics Procedia 84 ( 2016 ) 152 – 156
Terahertz pump – terahertz probe system at Novosibirsk free electron laser: commissioning and results of first experimentsY. Y. Choporova, Vasily V. Gerasimov, Boris A. Knyazev, Sergey M. Sergeev , Oleg A. Shevchenko, Roman Kh. Zhukavin, Nikolay V. Abrosimov, Konstantin A. Kovalevsky, Vladimir K. Ovchar, Heinz-Wilhelm Hübers,Gennady N. Kulipanov , Valery N. Shastin, Harald Schneider,Nikolay A. VinokurovIRMMW-THz 2016, 41st Conference Copenhagen
Atomic signatures of local environment from core-level spectroscopy in β-Ga2O3C. Cocchi, Hannes Zschiesche, Dmitrii Nabok, Anna Mogilatenko, Martin Albrecht, Zbigniew Galazka, Holm Kirmse, Claudia Draxl, Christoph T. KochPhysical Review B 94, 075147 (2016)
Strain Control of Fermiology and Many-Body Interactions in Two-Dimensional Ruthenates.B. Burganov, C. Adamo, A. Mulder, M. Uchida, P. D. C. King, J. W. Harter, D. E. Shai, A. S. Gibbs, A. P. Mackenzie, R. Uecker, M. Bruetzam, M. R. Beasley, C. J. Fennie, D. G. Schlom, K. M. Shen Phys. Rev. LETT 116 (2016) 197003
Investigation of interface abruptness and In content in (In,Ga)N/GaN superlatticesC. Chéze, M. Siekacz, F. Isa, B. Jenichen, F. Feix, J. Buller, T. Schulz, M. Albrecht, C. Skierbiszewski, R. Calarco, H. RiechertJournal of Applied Physics 120, 125307 (2016)
Electronic Characterization of Polar Nanoregions in Relaxor-Type Ferroelectric NaNbO3 Films.B. Cai, J. Schwarzkopf, E. Hollmann, D. Braun, M. Schmidbauer, T. Grellmann,R. WördenweberPhys. Rev. B 93 (2016) 224107
High Speed Growth of SrI2 Scintillator Crystals by the EFG ProcessG. Calvert, C. Guguschev, A. Burger, A. Groza, J. Derby, R. S. FeigelsonJ. Cryst. Growth 455 (2016) 143 - 151
Terahertz Emission at Impurity Electrical Breakdown in Si(Li)A. V. Adrianov, A. O. Zakhar’in, R. Kh. Zhukavin, V. N. Shastin, D. V. Shengurov, N. V. AbrosimovTech. Phys. Lett. 42 (2016) 1031 - 1033
Positron Probing of Disordered Regions in Neutron-Irradiated SiliconN. Arutyunov, N. Bennett, N. Wight, R. Krause-Rehberg, V. Emtsev, N. Abrosimov, V. KozlovskiPhys. Status Solidi B 253 (2016) 2175 - 2179
Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented SubstratesM. Baldini, Martin Albrecht, Andreas Fiedler, Klaus Irmscher, Robert Schewski, Günter WagnerECS Journal of Solid State Science and Technology, 6 (2) Q3040-Q3044 (2017)
Continuous Polycrystalline Silicon Layers on Glass Grown from Tin SolutionsR. Bansen, C. Ehlers, Th. Teubner, T. Markurt, J. Schmidtbauer, T. BoeckCrystEngComm 18 (2016) 1911 - 1917