Leibniz-Institut für Kristallzüchtung

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Solid-state laser cooling in Yb:CaF₂ and Yb:SrF₂ by anti-Stokes fluorescenceS. Püschel, F. Mauerhoff, C. Kränkel, and H. TanakaOptics Letters, 47, (2022), 2

Spectroscopic properties of Tb³⁺ as an ion for visible lasersS. Kalusniak, E. Castellano-Hernández, H. Yalçinoğlu. H. Tanaka, and C. KränkelAppl. Phys. B 128, (2022), 33

Controllable dynamic single- and dual-channel graphene-Q-switched operation in a beam-splitter-type Yb:YAG channel waveguideJ. E. Bae, T. Calmano, C. Kränkel, and F. RotermundLas. Phot. Rev., (2022), 202100501

Magnesium-Related Donors in Silicon: State of the ArtY. A. Astrov, L. M. Portsel, V. B. Shuman, A. N. Lodygin, N. V. AbrosimovPhys. Status Solidi A 219 (2022) 2200463

Controllable Dynamic Single- and Dual-Channel Graphene Q-Switching in a Beam-Splitter-Type Channel Waveguide LaserJ. E. Bae, T. Calmano, C. Kränkel, F. RotermundLaser Photon. Rev. 16 (2022) 100501

Morphogenesis of Liquid Indium Microdroplets on Solid Molybdenum Surfaces during Solidification at Normal Pressure and under Vacuum ConditionsO. C. Ernst, K. Böttcher, D. Fischer, D. Uebel, T. Teubner, T. BoeckLangmuir 38 (2022) 762–768

Growth of bulk beta-Ga2O3 single crystals by the Czochralski method Z. GalazkaJ. Appl. Phys. 131 (2022) 031103

Fabrication of chemically and structurally abrupt Eu _1−xLa_xO/SrO/Si interfaces and their analysis by STEM-EELSR. Held, J. A. Mundy, M. E. Holtz, D. Hodash, T. Mairoser, D. A. Muller, D. G. SchlomPhys. Rev. Mater. 5 (2022) 124419

Experimental and Theoretical Investigation of the Surface Electronic Structure of ZnGa₂O₄(100) Single-CrystalsF. Reichmann, J. Dabrowski, A. P. Becker, W. M. Klesse, K. Irmscher, R. Schewski, Z. Galazka, M. Mulazzi Phys. Status Solidi B 259 (2021) 2100452

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimerJ. A. T. de Guzman, V. P. Markevich, Ian D. Hawkins, J.Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, and A. R. PeakerJ. Appl. Phys. 130, (2021), 245703

Toward precise n-type doping control in MOVPE grown β-Ga₂O₃ thin films by deep learning approachT. Chou, S. B. Anooz, R. Grüneberg, K. Irmscher, N. Dropka, J. Rehm, T. V.Tran, W. Miller, P. Seyidov, M. Albrecht, A. PoppCrystals 12(2022) 8-19

Toward Precise n-Type Doping Control in MOVPE-Grown beta-Ga2O_{3<7sub> Thin Films by Deep-Learning Approach}T. Chou, S. Bin Anooz, R. Grüneberg, K. Irmscher, N. Dropka, J. Rehm, T. T. V. Tran, W. Miller, P. Seyidov, M. Albrecht, A. PoppCrystals 12 (2022) 8

Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer J. A T. de Guzman, V. P. Markevich, I. D. Hawkins, J. Coutinho, H. M. Ayedh, J. Binns, N. V. Abrosimov, S. B. Lastovskii, I. F. Crowe, M. P. Halsall, A. R. Peaker J. Appl. Phys. 130 (2021) 245703

Ge(001) surface reconstruction with Sn impuritiesK. Noatschk, E.V.S. Hofmann, J. Dabrowski, N.J. Curson, T. Schroeder, W.M. Klesse, G. SeiboldSurface Science, 713, (2021), 121912

Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in siliconS. G. Pavlov, L. M. Portsel, V. B. Shuman, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. A. Lynch, V. V. Tsyplenkov, and H.-W. HübersPhysical Review Materials, 5, (2021) 114607

Development and Optimization of VGF-GaAs Crystal Growth Process Using Data Mining and Machine Learning TechniquesN. Dropka, K. Böttcher, and M. HolenaCrystals, 11, (2021), 1218

Resonant boron acceptor states in semiconducting diamondS. G. Pavlov, D. D. Prikhodko, S. A. Tarelkin, V. S. Bormashov, N. V. Abrosimov, M. S. Kuznetsov, S. A. Terentiev, S. A. Nosukhin, S. Yu. Troschiev, V. D. Blank, and H.-W. HübersPhysical Review B 104, (2021), 155201

A proof of concept of the bulk photovoltaic effect in non-uniformly strained siliconC. L. Manganelli, S. Kayser and M. VirgilioJ. Appl. Phys. 131, (2022), 125706

Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline SiliconJoyce Ann T. De Guzman,* Vladimir P. Markevich, José Coutinho, Nikolay V. Abrosimov, Matthew P. Halsall, and Anthony R. PeakerSol. RRL (2021), 2100459

Phase diagram studies for the growth of (Mg,Zr):SrGa₁₂O₁₉ crystalsD. Klimm, B. Szczefanowicz, N. Wolff, M. BickermannJournal of Thermal Analysis and Calorimetry (2022) 147:7133–7139

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