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FTIR exhaust gas analysis of GaN pseudo-halide vapor phase growthK. Kachel, Dietmar Siche, Sebastian Golka, Petr Sennikov, Matthias BickermannMaterials, Chemistryand Physics Volume 177, 1 July 2016, Pages 12-18
The influence of oxygen partial pressure in the growth atmosphere on the coloration of SrTiO3 single crystal fibersF. Kamutzki, Christo Guguschev, Dirk J. Kok, Rainer Bertram, Uta Juda, Reinhard UeckeraCrystEngComm, 2016,18, 5658-5666
Defects involving interstitial boron in low-temperature irradiated siliconL. I. Khirunenko, M. G. Sosnin,A. V. Duvanskii, N. V. Abrosimov,H. RiemannPhysical Review B 94, 235210 (2016)
Photosensitization of Natural and Synthetic SnO2 Single Crystals with Dyes and Quantum DotsL. A. King, Qian Yang, Michael L. Grossett, Zbigniew Galazka, Reinhard Uecker, B. A. ParkinsonJ. Phys. Chem. C, 2016, 120 (29), pp 15735–15742
Scintillator Crystals.D. Klimmin book: S. Hashmi, Reference Module in Materials Science and Materials Engineering, Elsevier, Oxford (2016) 1 - 7 ISBN: 978-0-12-803581-8
Origin of Brown Coloration in Top-Seeded Solution Grown SrTiO3 Crystals.D. J. Kok, C. Guguschev, T. Markurt, M. Niu, R. Bertram, M. Albrecht, K. IrmscherCrystEngComm 18 (2016) 4580 - 4586
Hydrogen Reduction of 98MoF6 in RF DischargeR. A. Kornev, R. A. Kornev, P.G. Sennikov, D.A. Konychev, A.M. Potapov, D.Yu. Chuvilin, P.A. Yunin, S. A. Gusev, M. NaumannJ Radioanal Nucl Chem 309 (2016) 833-840
Comparison of the luminous efficiency of Ga- and N-polar InxGa1-xN/InyGa1-yN quantum wells grown by plasma-assisted molecular beam epitaxy S. Fernandez-Garrido, J. Lähnemann, C. Hauswald, M. Korytov, Mr. Albrecht, C. Chèze, C. Skierbiszewski, O. BrandtPhys. Rev. Applied, Vol. 6, Iss. 3 — 2016
Preparation of Deep UV Transparent AlN Substrates with High Structural Perfection for Optoelectronic Devices.C. Hartmann, J. Wollweber, S. Sintonen, A. Dittmar, L. Kirste, S. Kollowa, K. Irmscher, M. BickermannCrystEngComm 18 (2016) 3488 - 3497
Reevaluation of phase relations in the chemical system neodymium lutetium oxide NdLuO3T. Hirsch, Tamino Hirsch, Reinhard Uecker, and Detlef KlimmCryst. Res. Technol., 1–7 (2016)
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped ß-Ga2O3 MOSFETs.A. J. Green, K.D. Chabak, E.R. Heller, R.C. Fitch, M. Baldini, A. Fiedler, K. Irmscher, G. Wagner, Z. Galazka, S.E. Tetlak, A. Crespo, K. Leedy, G. H. JessenIEEE ELECTR DEVICE L 37 (2016) 902 - 905
A Spectroscopic Comparison of IGZO Thin Films and the Parent In2O3, Ga2O, and ZnO Single CrystalsJ. Haeberle, S. Brizzi, D. Gaspar, P. Barquinha, Z. Galazka, D. Schulz, D. SchmeißerMater Res Express 3 (2016) 106302
Scaling-Up of Bulk β-Ga2O3 Single Crystals by the Czochralski MethodZ. Galazka, Reinhard Uecker, Detlef Klimm, Klaus Irmscher, Martin Naumann, Mike Pietsch, Albert Kwasniewski, Rainer Bertram, Steffen Ganschow and Matthias BickermannECS J. Solid State Sci. Technol. 2017 volume 6, issue 2, Q3007-Q3011
Conditions for the Growth of Fe1-xO Crystals Using the Micro-Pulling-Down Technique.S. Ganschow, A. Kwasniewski, D. KlimmJ. Cryst. Growth 450 (2016) 203-206
Flattening of solid-liquid interface in VGF-GaAs growth by various travelling magnetic fieldsR. Zwierz, N. Dropka, A. Glacki, U. Juda, Ch. Frank-Rotschin: E. Baake, B. Nacke (eds.), Proceedings of XVIII International UIE-Congress on Electrotechnologies for Material Processing Hannover (2017) 474 - 479
Electron Nuclear Double Resonance with Donor-Bound Excitons in SiliconD. P. Franke, M. Szech, F. M. Hrubesch, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, K. M. Itoh, M. L.W. Thewalt, M. S. BrandtPhys. Rev. B 94 (2016) 235201
The spin-flip scattering effect in the spin transport in silicon doped with bismuthA. A. P. Detochenko, A. V. Soukhorukov, D. V. Guseinov, A. V. Kudrin, N. V. Abrosimov, H. RiemannIOP Conf. Series: Journal of Physics: Conf. Series, 816 (2017) 012001
Length Distributions of Nanowires Growing by Surface DiffusionV. G. Dubrovskii, Y. Berdnikov, J. Schmidtbauer, M. Borg, K. Storm, K. Deppert, J. JohanssonCryst. Growth Des. 16 (2016) 2167 - 2172
Some Challenging Points in the Identification of Defects in Floating-Zone n-Type Silicon Irradiated with 8 and 15 MeV ProtonsV. V. Emtsev, N. V. Abrosimov, V. V. Kozlovskii, G. A. Oganesyan, D. S. PoloskinSemiconductors, 2016, Vol. 50, No. 10, pp. 1291–1298