Leibniz-Institut für Kristallzüchtung

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Data-Driven Cz-Si Scale-Up under Conditions of Partial SimilarityN. Dropka, K. Böttcher, G. K. Chappa and M. HolenaCrystal Research and Technology (2024)

Dielectric function and interband critical points of compressively strained ferroelectric K 0.85 Na 0.15 NbO 3 thin film with monoclinic and orthorhombic symmetryS. Bin Anooz, P. Petrik, Y. K. Wang, D. Mukherjee, M. Schmidbauer and J. SchwarzkopfOptics Express(9), (2024) 15597-15609

Epitaxial growth of α-(Al_xGa_1-x)₂O₃ by suboxide molecular-beam epitaxy at 1 μm/hJ. Steele, K. Azizie, N. Pieczulewski, Y. Kim, S. Mou, T. J. Asel, A. T. Neal, D. Jena, H. G. Xing, D. A. Muller, T. Onuma and D. G. SchlomApl Materials(4), (2024)

Evolution of Graphene Dirac Fermions in Electric Double-Layer Transistors with a Soft BarrierF. R. Lin, J. W. Liu, H. Lu, X. Liu, Y. Liu, Z. L. Hu, P. Lyu, Z. H. Zhang, J. Martin, W. L. Guo and Y. P. LiuAdvanced Functional Materials (2024)

Oxygen partial pressure and temperature dependent electrical conductivity of lithium-niobate-tantalate solid solutionsU. Yakhnevych, F. El Azzouzi, F. Bernhardt, C. Kofahl, Y. Suhak, S. Sanna, K. D. Becker, H. Schmidt, S. Ganschow and H. FritzeSolid State Ionics(2024)

Single crystalline high-purity germanium bars grown by the zone-refining techniqueK. P. Gradwohl, A. Gybin, C. Guguschev, A. Kwasniewski, M. Pietsch, U. Juda, C. Richter and R. R. SumathiJournal of Crystal Growth(2024)

High-fidelity spin qubit operation and algorithmic initialization above 1 K.Huang, J. Y.; Su, R. Y.; Lim, W. H.; Feng, M. K.; van Straaten, B.; Severin, B.; Gilbert, W.; Stuyck, N. D.; Tanttu, T.; Serrano, S.; Cifuentes, J. D.; Hansen, I.; Seedhouse, A. E.; Vahapoglu, E.; Leon, R. C. C.; Abrosimov, N. V.; Pohl, H. J.; Thewalt, M. L. W.; Hudson, F. E.; Escott, C. C.; Ares, N.; Bartlett, S. D.; Morello, A.; Saraiva, A.; Laucht, A.; Dzurak, A. S.:Yang, C. H.,Nature;(2024),

2D Time-Domain Spectroscopy for Determination of Energy and Momentum Relaxation Rates of Hydrogen-Like Donor States in GermaniumT. B. Gill, S. Pavlov, C. S. Kidd, P. Dean, A. D. Burnett, A. Dunn, L. H. Li, N. V. Abrosimov, H. W. Hübers, E. H. Linfield, A. G. Davies and J. R. FreemanAcs Photonics(4), (2024) 1447-1455

Accumulation and removal of Si impurities on β-Ga₂O₃ arising from ambient air exposureJ. P. McCandless, C. A. Gorsak, V. Protasenko, D. G. Schlom, M. O. Thompson, H. G. Xing, D. Jena and H. P. NairApplied Physics Letters(11), (2024)

Deflecting Dendrites by Introducing Compressive Stress in Li₇La₃Zr₂O₁₂ Using Ion ImplantationF. Flatscher, J. Todt, M. Burghammer, H. S. Soreide, L. Porz, Y. J. Li, S. Wenner, V. Bobal, S. Ganschow, B. Sartory, R. Brunner, C. Hatzoglou, J. Keckes and D. RettenwanderSmall(12), (2024)

Ferroelectric Hysteresis Measurement in the Lithium Niobate-Lithium Tantalate Single-Crystalline Family: Prospects for Lithium Niobate-TantalateB. Koppitz, S. Ganschow, M. Rüsing and L. M. EngPhysica Status Solidi a-Applications and Materials Science2024)

High-fidelity spin qubit operation and algorithmic initialization above 1 KJ. Y. Huang, R. Y. Su, W. H. Lim, M. K. Feng, B. van Straaten, B. Severin, W. Gilbert, N. D. Stuyck, T. Tanttu, S. Serrano, J. D. Cifuentes, I. Hansen, A. E. Seedhouse, E. Vahapoglu, R. C. C. Leon, N. V. Abrosimov, H. J. Pohl, M. L. W. Thewalt, F. E. Hudson, C. C. Escott, N. Ares, S. D. Bartlett, A. Morello, A. Saraiva, A. Laucht, A. S. Dzurak and C. H. YangNature(8005), (2024)

Impurity-induced enhancement of parity-forbidden optical intracenter transitions of shallow donors in siliconS. G. Pavlov and N. V. AbrosimovMaterials Science in Semiconductor Processing(2024)

Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge₂Sb₂Te₅ electronic synapsesQ. Wang, Y. C. Wang, Y. K. Wang, L. Y. Jiang, J. Y. Zhao, Z. T. Song, J. S. Bi, L. B. Zhao, Z. D. Jiang, J. Schwarzkopf, S. L. Wu, B. Zhang, W. Ren, S. N. Song and G. NiuInfomat2024)

Numerical modelling of Cz-β-Ga₂O₃ crystal growth in reactive atmosphereG. K. Chappa, V. Artemyev, A. Smirnov, D. Klimm and N. DropkaJournal of Crystal Growth(2024)

Oxygen Diffusion in Li(Nb,Ta)O₃ Single CrystalsC. Kofahl, J. Uhlendorf, B. A. Muscutt, M. N. Pionteck, S. Sanna, H. Fritze, S. Ganschow and H. SchmidtPhysica Status Solidi a-Applications and Materials Science2024)

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam EpitaxyN. Kafi, S. D. Kang, C. Golz, A. Rodrigues-Weisensee, L. Persichetti, D. Ryzhak, G. Capellini, D. Spirito, M. Schmidbauer, A. Kwasniewski, C. Netzel, O. Skibitzki and F. HatamiCrystal Growth & Design(7), (2024) 2724-2733

Simulation of crucible-free growth of monocrystalline silicon fibres for mirror suspension in gravitational-wave detectorsL. Vieira, I. Buchovska, I. Tsiapkinis, A. Wintzer, K. Dadzis and R. MenzelJournal of Crystal Growth(2024)

Synthesis of thin film infinite-layer nickelates by atomic hydrogen reduction: Clarifying the role of the capping layerC. T. Parzyck, V. Anil, Y. Wu, B. H. Goodge, M. Roddy, L. F. Kourkoutis, D. G. Schlom and K. M. ShenApl Materials(3), (2024)

The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge_1-xSn_x MicrodisksI. Zaitsev, A. A. Corley-Wiciak, C. Corley-Wiciak, M. H. Zoellner, C. Richter, E. Zatterin, M. Virgilio, B. Martin-García, D. Spirito and C. L. ManganelliPhysica Status Solidi-Rapid Research Letters(3), (2024)

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