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Molecular beam epitaxy of KTaO3T. Schwaigert, S. Salmani-Rezaie, M. R. Barone, H. Paik, E. Ray, M. D. Williams, D. A. Muller, D. G. Schlom and K. AhadiJournal of Vacuum Science & Technology A(2), (2023)
Self-stabilization of the equilibrium state in ferroelectric thin filmsP. Gaal, D. Schmidt, M. Khosla, C. Richter, P. Boesecke, D. Novikov, M. Schmidbauer, J. SchwarzkopfApplied Surface Science 613 (2023) 155891
Temperature dependence of the band gap of 28Si:P at very low temperatures measured via time-resolved optical spectroscopyE. Sauter, N. V. Abrosimov, J. Hübner, M. OestreichPhys. rev. res. 5 (2023) 013182
Valley-orbit splitting of lithium-related donors in siliconS. G. Pavlov, N. V. Abrosimov and H. W. HübersPhysical Review B(11), (2023)
Self-stabilization of the equilibrium state in ferroelectric thin filmsP. Gaal, D. Schmidt, M. Khosla, C. Richter, P. Boesecke, D. Novikov, M. Schmidbauer, J. SchwarzkopfApplied Surface Science 613 (2023) 155891
Li self-diffusion and ion conductivity in congruent LiNbO3 and LiTaO3 single crystalsC. Kofahl, L. Dörrer, B. Muscutt, S. Sanna, S. Hurskyy, U. Yakhnevych, Y. Suhak, H. Fritze, S. Ganschow, H. SchmidtPhys. Rev. Materials 7 (2023) 033403
Valley-orbit splitting of lithium-related donors in siliconS. G. Pavlov, N. V. Abrosimov, H.-W. HübersPhys. Rev. B 107 (2023) 115205
Temperature dependence of the band gap of 28Si:P at very low temperatures measured via time-resolved optical spectroscopyE. Sauter, N. V. Abrosimov, J. Hübner, M. OestreichPhys. rev. res. 5 (2023) 013182
Growth of 28Si Quantum Well Layers for Qubits by a Hybrid MBE/CVD TechniqueY. J. Liu, K. P. Gradwohl, C. H. Lu, Y. Yamamoto, T. Remmele, C. Corley-Wiciak, T. Teubner, C. Richter, M. Albrecht and T. BoeckEcs Journal of Solid State Science and Technology(2), (2023)
Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (100) beta-Ga2O3 thin films using in-situ reflectance spectroscopyT. S. Chou, S. Bin Anooz, R. Gruneberg, T. V. T. Tran, J. Rehm, Z. Galazka, and A. PoppJournal of Crystal Growth 603 (2023)
Nanoscale Surface Structure of Nanometer-Thick Ferroelectric BaTiO3 Films Revealed by Synchrotron X-ray Scanning Tunneling Microscopy: Implications for Catalytic Adsorption ReactionsP. Abbasi, N. Shirato, R. E. Kumar, I. V. Albelo, M. R. Barone, D. N. Cakan, M. D. Cruz-Jáuregui, S. Wieghold, D. G. Schlom, V. Rose, T. A. Pascal and D. P. FenningAcs Applied Nano Materials(3), (2023) 2162-2170
Non-volatile electric-field control of inversion symmetryL. Caretta, Y. T. Shao, J. Yu, A. B. Mei, B. F. Grosso, C. Dai, P. Behera, D. Lee, M. McCarter, E. Parsonnet, K. P. Harikrishnan, F. Xue, X. W. Guo, E. S. Barnard, S. Ganschow, Z. J. Hong, A. Raja, L. W. Martin, L. Q. Chen, M. Fiebig, K. J. Lai, N. A. Spaldin, D. A. Muller, D. G. Schlom, and R. RameshNature Materials 22 (2), 207-+ (2023)
On-demand electrical control of spin qubitsW. Gilbert, T. Tanttu, W. H. Lim, M. K. Feng, J. Huang, J. D. Cifuentes, S. Serrano, P. Mai, R. C. C. Leon, C. C. Escott, K. M. Itoh, N. V. Abrosimov, H. J. Pohl, M. L. W. Thewalt, F. E. Hudson, A. Morello, A. Laucht, C. H. Yang, A. Saraiva and A. S. DzurakNature Nanotechnology(2), (2023) 131-136
Set/Reset Bilaterally Controllable Resistance Switching Ga-doped Ge2Sb2Te5 Long-Term Electronic Synapses for Neuromorphic ComputingQ. Wang, R. Luo, Y. Wang, W. Fang, L. Jiang, Y. Liu, R. Wang, L. Dai, J. Zhao, J. Bi, Z. Liu, L. Zhao, Z. Jiang, Z. Song, J. Schwarzkopf, T. Schroeder, S. Wu, Z. Ye, W. Ren, S. Song, G. NiuAdv. Funct. Mater. (2023) 2213296
Enhancement-mode vertical (100) beta-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm-1K. Tetzner, M. Klupsch, A. Popp, S. Bin Anooz, T. S. Chou, Z. Galazka, K. Ickert, M. Matalla, R. S. Unger, E. B. Treidel, M. Wolf, A. Trampert, J. Wurfl, and O. HiltJapanese Journal of Applied Physics 62 (SF) (2023)
Ge-ion implantation and activation in (100) beta-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealingK. Tetzner, A. Thies, P. Seyidov, T. S. Chou, J. Rehm, I. Ostermay, Z. Galazka, A. Fiedler, A. Pnopp, J. Wurfl, and O. HiltJournal of Vacuum Science & Technology A 41 (4) (2023)
Stimulated-emission cross-sections of trivalent erbium ions in the cubic sesquioxides Y2O3, Lu2O3, and Sc2O3A. Uvarova, P. Loiko, S. Kalusniak, E. Dunina, L. Fomicheva, A. Kornienko, S. Balabanov, A. Braud, P. Camy, and C. KrankelOptical Materials Express 13 (5), 1385-1400 (2023)
Set/Reset Bilaterally Controllable Resistance Switching Ga-doped Ge2Sb2Te5 Long-Term Electronic Synapses for Neuromorphic ComputingQ. Wang, R. Luo, Y. K. Wang, W. C. Fang, L. Y. Jiang, Y. Y. Liu, R. B. Wang, L. Y. Dai, J. Y. Zhao, J. S. Bi, Z. H. Liu, L. B. Zhao, Z. D. Jiang, Z. T. Song, J. Schwarzkopf, T. Schroeder, S. L. Wu, Z. G. Ye, W. Ren, S. N. Song, and G. NiuAdvanced Functional Materials 33 (19) (2023)
Recrystallization of MBE-Grown MoS2 Monolayers Induced by Annealing in a Chemical Vapor Deposition FurnaceR. B. Wang, N. Koch, J. Martin, and S. SadofevPhysica Status Solidi-Rapid Research Letters 17 (5) (2023)
Y-Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal DichalcogenidesR. B. Wang, M. Schmidbauer, N. Koch, J. Martin, and S. SadofevPhysica Status Solidi-Rapid Research Letters (2023)