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Toward a Reliable Synaptic Simulation Using Al-Doped HfO2 RRAMS. Roy, Gang Niu, Qiang Wang, Yankun Wang, Yijun Zhang, Heping Wu, Shijie Zhai, Peng Shi, Sannian Song, Zhitang Song, Zuo-Guang Ye, Christian Wenger, Thomas Schroeder, Ya-Hong Xie, Xiangjian Meng, Wenbo Luo, and Wei RenACS Appl. Mater. Interfaces, ACS Appl. Mater. Interfaces 12 (2020) 10648–10656
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxyS. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R.W. Martin, P. A. Shields, M. Kneissl, M. WeyersJournal of Crystal Growth 531 (2020) 125343
Ti- and Fe-related charge transition levels in β−Ga2O3Ch. Zimmermann, Ymir Kalmann Frodason , Abraham Willem Barnard, Joel Basile Varley , Klaus Irmscher , Zbigniew Galazka , Antti Karjalainen , Walter Ernst Meyer , Francois Danie Auret, and Lasse VinesAppl. Phys. Lett., 116, (2020), 072101
Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)M. Budde, M.Budde, T. Remmele, C.Tschammer, J. Feldl, P. Franz, J. Lähnemann, Z. Cheng, M. Hanke, M. Ramsteiner, M. Albrecht ,and O. BierwagenJ. Appl. Phys. 127 (2020) 015306
Diode‐Pumped Laser Operation of Tb3+:LiLuF4 in the Green and Yellow Spectral RangeE. Castellano-Hernández, Sascha Kalusniak, Philip W. Metz, Christian KränkelLaser Photon. Rev. 14 (2) (2020), 1900229
Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ionsZ. Galazka, Klaus Irmscher, Robert Schewski, Isabelle M. Hanke, Mike Pietsch, Steffen Ganschow, Detlef Klimm, Andrea Dittmar, Andreas Fiedler, Thomas Schröder, Matthias BickermannJournal of Crystal Growth 529 (2020) 125297
Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystalsK.-P. Gradwohl, A.N. Danilewsky, M. Roder, M Schmidbauer, J. Janicsko-Csathy, A. Gybin, N. Abrosimov, R.R. SumathiJ. Appl. Cryst. 53 (2020) 880-884
Sensitization of SnO2 Single Crystals with Multidentate-Ligand- Capped PbS Colloid Quantum Dots to Enhance the Photocurrent StabilityG. Li, Qian Yang,Lenore Kubie, Joshua T. Stecher, Zbigniew Galazka, Reinhard Uecker, and Bruce A. ParkinsonChemNanoMat 6 (2020) 461-469
Substrate-orientation dependence of ß-Ga2O3 (100), (010), (001), and (201) homoepitaxy by indium-mediated metalexchange catalyzed molecular beam epitaxy (MEXCAT-MBE)P. Mazzolini, A. Falkenstein , C. Wouters , R. Schewski , T. Markurt, Z. Galazka , M. Martin , M. Albrecht , and O. BierwagenAPL Materials 8 (2020) 011107
Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressureN. V. Morozov, Igor V. Korobeinikov, Nikolay V. Abrosimov, and Sergey V. OvsyannikovCrystEngComm 22 (2020) 5416
Identification of the donor and acceptor states of the bond-centered hydrogen– carbon pair in Si and diluted SiGe alloysR. Stübner, Vl. Kolkovsky, J. Weber , N. V. Abrosimov, C. M. Stanley , D. J. Backlund, and S. K. EstreicherJournal of Applied Physics, Journal of Applied Physics 127 (2020) 045701
Local Electronic Structure in AlN Studied by Single-Crystal 27Al and 14N NMR and DFT CalculationsO. E. O. Zeman, Igor L. Moudrakovski, Carsten Hartmann, Sylvio Indris, Thomas BräunigerMolecules 25(3) (2020) 469
Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped siliconR. Kh. Zhukavin, S. G. Pavlov, N. Stavrias, K. Saeedi, K. A. Kovalevsky, P. J. Phillips, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, N. Deβmann, H.-W. Hübers, V. N. Shastin Journal of Applied Physics 127 (2020) 035706
Relaxation Times and Population Inversion of Excited States of Arsenic Donors in GermaniumR. Kh. Zhukavin, K. A. Kovalevskii, Yu. Yu. Choporova, V. V. Tsyplenkov, V. V. Gerasimov, P. A. Bushuikin, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. N. ShastinJETP Letters 110 (2019) 677–682
Electroluminescence of Cr3+ and pseudo-Stark effect in β-Ga2O3 Schottky barrier diodesA. Fiedler, Z. Galazka , and K. IrmscherJournal of Applied Physics 126, 213104 (2019)
Carbon Pair Defects in Aluminum NitrideI. Gamov, C. Hartmann, J. Wollweber, A. Dittmar, T. Straubinger, M. Bickermann, I. Kogut, H. Fritze, K. IrmscherJournal of Applied Physics
Electrical conductivity tensor of β-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundariesCh. Golz, Zbigniew Galazka, Jonas Lähnemann, Vanesa Hortelano, Fariba Hatami, W. Ted Masselink, Oliver BierwagenPhys. Rev. Materials 3, 124604
Single crystal growth and characterization of Ba2ScNbO6 – A novel substrate for BaSnO3 filmsCh. Guguschev, D. Klimm, M. Brützam, T.M. Gesing, M. Gogolin, H. Paik, A. Dittmar, V.J. Fratello, D.G. Schlom,Journal of Crystal Growth 528 (2019) 125263
Electromechanical Losses in Carbon- and Oxygen-Containing Bulk AlN Single CrystalsI. Kogut, C. Hartmann, I. Gamov, Y. Suhak, M. Schulz, S. Schröder, J. Wollweber, A. Dittmar, K. Irmscher, T. Straubinger, M. Bickermann, H. FritzeSolid State Ionics, Volume 343, 15 December 2019, 115072