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Monte Carlo fluorescence ray tracing simulation for laser cooling of solidsH. Tanaka and S. PüschelOptics Express(2), (2024) 2306-2320
Properties of a highly compensated high-purity germaniumP. C. Palleti, P. Seyidov, A. Gybin, M. Pietsch, U. Juda, A. Fiedler, K. Irmscher and R. R. SumathiJournal of Materials Science-Materials in Electronics(1), (2024)
Treatment of multiple-beam X-ray diffraction in energy-dependent measurementsM. Nentwich, M. Zschornak, T. Weigel, T. Köhler, D. Novikov, D. C. Meyer and C. RichterJournal of Synchrotron Radiation(2024) 28-34
Unraveling the atomic mechanism of the disorder-order phase transition from γ-Ga2O3 to β-Ga2O3C. Wouters, M. Nofal, P. Mazzolini, J. J. Zhang, T. Remmele, A. Kwasniewski, O. Bierwagen and M. AlbrechtApl Materials(1), (2024)
Y-Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal DichalcogenidesR. B. Wang, M. Schmidbauer, N. Koch, J. Martin and S. SadofevPhysica Status Solidi-Rapid Research Letters(1), (2024)
Decision Tree-Supported Analysis of Gallium Arsenide Growth Using the LEC MethodX. Tang, G. K. Chappa, L. Vieira, M. Holena and N. DropkaCrystals(12), (2023)
Growth and martensitic transformation of ferromagnetic Co-Cr-Ga-Si epitaxial filmsY. R. Ge, K. Lünser, F. Ganss, P. Gaal, L. Fink and S. FählerScience and Technology of Advanced Materials(1), (2023)
High-resolution photoluminescence study on donor-acceptor pair (DAP) recombination in silicon crystals co-doped with phosphorous and galliumT. O. A. Fattah, J. Jacobs, V. P. Markevich, N. Abrosimov, M. P. Halsall, I. F. Crowe and A. R. PeakerJournal of Science-Advanced Materials and Devices(4), (2023)
Charge state transition levels of Ni in β-Ga2O3 crystals from experiment and theory: An attractive candidate for compensation dopingP. Seyidov, J. B. Varley, J. X. Shen, Z. Galazka, T. S. Chou, A. Popp, M. Albrecht, K. Irmscher and A. FiedlerJournal of Applied Physics(20), (2023)
Comprehensive study of the interstitial hydrogen donor in SnO2F. Herklotz, E. Lavrov, V. V. Melnikov, Z. Galazka and V. F. AgekyanPhysical Review B(20), (2023)
Development of the VGF Crystal Growth Recipe: Intelligent Solutions of Ill-Posed Inverse Problems using Images and Numerical DataN. Dropka, M. Holena, C. Thieme and T. S. ChouCrystal Research and Technology(11), (2023)
Electronic Synapses Enabled by an Epitaxial SrTiO3-δ / Hf0.5Zr0.5O2 Ferroelectric Field-Effect Memristor Integrated on SiliconN. Siannas, C. Zacharaki, P. Tsipas, D. J. Kim, W. Hamouda, C. Istrate, L. Pintilie, M. Schmidbauer, C. Dubourdieu and A. DimoulasAdvanced Functional Materials2023)
Enhanced TC in SrRuO3/DyScO3(110) thin films with high residual resistivity ratioN. J. Schreiber, L. Miao, H. P. Nair, J. P. Ruf, L. Bhatt, Y. A. Birkholzer, G. N. Kotsonis, L. F. Kourkoutis, K. M. Shen and D. G. SchlomApl Materials(11), (2023)
Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approachesT. S. Chou, J. Rehm, S. Bin Anooz, O. Ernst, A. Akhtar, Z. Galazka, W. Miller, M. Albrecht, P. Seyidov, A. Fiedler and A. PoppJournal of Applied Physics(19), (2023)
Growth of β-Ga2O3 and (sic)/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxyS. Raghuvansy, J. P. McCandless, M. Schowalter, A. Karg, M. Alonso-Orts, M. S. Williams, C. Tessarek, S. Figge, K. Nomoto, H. G. Xing, D. G. Schlom, A. Rosenauer, D. Jena, M. Eickhoff and P. VogtApl Materials(11), (2023)
Parametric numerical study of dislocation density distribution in Czochralski-grown germanium crystalsA. Sabanskis, K. Dadzis, K. P. Gradwohl, A. Wintzer, W. Miller, U. Juda, R. R. Sumathi and J. VirbulisJournal of Crystal Growth(2023)
Scintillation and radioluminescence mechanism in β-Ga2O3 semiconducting single crystalsA. J. Wojtowicz, M. E. Witkowski, W. Drozdowski, M. Makowski and Z. GalazkaHeliyon(11), (2023)
Thermal Stability of Schottky Contacts and Rearrangement of Defects in β-Ga2O3 CrystalsP. Seyidov, J. B. Varley, Y. K. Frodason, D. Klimm, L. Vines, Z. Galazka, T. S. Chou, A. Popp, K. Irmscher and A. FiedlerAdvanced Electronic Materials2023)
Monolithic integration of InP nanowires with CMOS fabricated silicon nanotips waferA. Kamath, O. Skibitzki, D. Spirito, S. Dadgostar, I. M. Martinez, M. Schmidbauer, C. Richter, A. Kwasniewski, J. Serrano, J. Jimenez, C. Golz, M. A. Schubert, J. W. Tomm, G. Niu, F. Hatami Phys. Rev. Mat. 7, 103801 (2023)
A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)W. Miller, A. Sabanskis, A. Gybin, K. P. Gradwohl, A. Wintzer, K. Dadzis, J. Virbulis and R. SumathiCrystals(10), (2023)