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Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated EmissionV. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, and H.-W. HübersSemiconductors, 2019, Vol. 53, No. 9, pp. 1234–1237
Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBEM. Siekacz, Wolny, Pawel; Ernst, Torsten; Grzanka, Ewa; Staszczak, Grzegorz; Suski, Tadeusz; Feduniewicz-Zmuda, Anna; Sawicka, Marta; Moneta, Joanna; Anikeeva, Mariia; Schulz, Tobias; Albrecht, Martin; Skierbiszewski, CzeslawSuperlattices and Microstructures Volume 133, September 2019, 106209
Lateral 1.8 kV β -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of MeritK. Tretzner, Eldad Bahat Treidel, Oliver Hilt, Andreas Popp, Saud Bin Anooz, Günter Wagner, Andreas Thies, Karina Ickert, Hassan Gargouri, Joachim WürflIEEE Electron Device Letters ( Volume: 40, Issue: 9, Sept. 2019)
Directional solidification of gallium under time-dependent magnetic fields with in situ measurements of the melt flow and the solid-liquid interfaceN. Thieme, M. Keil,D. Meier, P. Boenisch, K. Dadzis, O. Paetzold, M. Stelter, L. Buettner, J. CzarskeJournal of Crystal Growth, Volume 522, p. 221-229.
Polarity Tunable Trionic Electroluminescence in Monolayer WSe2J. Wang, Lin, Fanrong; Verzhbitskiy, Ivan; Watanabe, Kenji; Taniguchi, Takashi; Martin, Jens; Eda, GoldNano Lett. 2019, 19, 10, 7470–7475
Role of interface quality for the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic propertiesM. Althammer, Singh, Amit Vikram; Wimmer, Tobias; Galazka, Zbigniew; Huebl, Hans; Opel, Matthias; Gross, Rudolf; Gupta, ArunavaAppl. Phys. Lett. 115, 092403 (2019)
Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrateT. Kamikawa, Gandrothula, Srinivas; Araki, Masahiro; Li, Hongjian; Oliva, Valeria Bonito; Wu, Feng; Cohen, Daniel; Speck, James S.; Denbaars, Steven P.; Nakamura, ShujiOptic Express ,Vol. 27, Issue 17, pp. 24717-24723 (2019
Tailoring the scintillation properties of ß- Ga2O3M. Makowski, W. Drozdowski, M. E. Witkowski, A. J. Wojtowicz, K. Irmscher, R. Schewski, Z. Galazka Vol. 9, No. 9 / 1 September 2019 / Optical Materials Express 3738
Dynamics of crosshatch patterns in heteroepitaxyF. Rovaris, Zoellner, Marvin H.; Zaumseil, Peter; Marzegalli, Anna; Di Gaspare, Luciana; De Seta, Monica; Schroeder, Thomas; Storck, Peter; Schwalb, Georg; Capellini, Giovanni; Montalenti, FrancescoPHYSICAL REVIEW B, Vol. 100, Iss. 8 — 15 August 2019
Electrical properties of (100) β-Ga2O3 Schottky diodes with four different metalsK. Jiang, Luke A.M. Lyle, Elizabeth V. Favela, Diamond Moody, Tianxiang Lin, Kalyan K. Das, Andreas Popp, Zbigniew Galazka, Günter Wagner, and Lisa M. Porter2019 ECS Trans. 92 71
Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystalsT. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, Y. Yamashita, T. ChikyowJapanese Journal of Applied Physics 58, 080903 (2019)
Evidence of a second-order Peierls-driven metal-insulator transition in crystalline NbO2M. J. Wahila, Paez, Galo; Singh, Christopher N.; Regoutz, Anna; Sallis, Shawn; Zuba, Mateusz J.; Rana, Jatinkumar; Tellekamp, M. Brooks; Boschker, Jos E.; Markurt, Toni; Swallow, Jack E. N.; Jones, Leanne A. H.; Veal, Tim D.; Yang, Wanli; Lee, Tien-Lin; Rodolakis, Fanny; Sadowski, Jerzy T.; Prendergast, David; Lee, Wei-Cheng; Doolittle, W. Alan; Piper, Louis F. J.Physical Review Materials, Vol. 3, Iss. 7 — July 2019
Role of hole confinement in the recombination properties of InGaN quantum structuresM. anikeeva, Albrech, M.; Mahler, F.; Tomm, J. W.; Lymperakis, L.; Cheze, C.; Calarco, R.; Neugebauer, J.; Schulz, T.Scientific Reports volume 9, Article number: 9047 (2019)
Impact of optically induced carriers on the spin relaxation of localized electron spins in isotopically enriched siliconM. Beck, N. V. Abrosimov, J. Hübner, M. OestreichPHYSICAL REVIEW B 99, 245201 (2019)
Features of the Formation of the BiBs Defect in SiL. I. Khirunenko, Mikhail Sosnin, Andrei Duvanskii, Nikolay Abrosimov, Helge RiemannPhys. Status Solidi A 2019, 216, 1900291
Ferroelectric Self-Poling in GeTe Films and CrystalsD. Kriegner, Springholz, Gunther; Richter, Carsten; Filet, Nicolas; Mueller, Elisabeth; Capron, Marie; Berger, Helmut; Holy, Vaclay; Dil, J. Hugo; Krempasky, JurajCrystals 2019, 9(7), 335
Vectorial observation of the spin Seebeck effect in epitaxial NiFe2O4 thin films with various magnetic anisotropy contributionsZ. Li, Jan Krieft, Amit Vikram Singh, Sudhir Regmi, Ankur Rastogi, Abhishek Srivastava, Zbigniew Galazka, Tim Mewes, Arunava Gupta, Timo KuschelAppl. Phys. Lett. 114, 232404 (2019)
Unusual Polarization Dependence of Dislocation-Related Luminescence in n-GaNO. Medvedev, M. Albrecht, O. VyvenkoPhys. Status Solidi A 2019, 216, 1900305
Float-Zone Growth of Silicon Crystals using Large-area Seeding R. Menzel, H.-J. Rost, F. M. Kießling, L. SyllaJournal of Crystal Growth, Volume 515, 1 June 2019, Pages 32-36
Advanced coherent X-ray diffraction and electron microscopy of individual InP nanocrystals on Si nanotips for III-V on Si electronics and optoelectronicsG. Niu, S. Leake, O. Skibitzki, T. Niermann, J. Carnis, F. Kießling, F. Hatami, E. H. Hussein, M. A. Schubert, P.Zaumseil, G. Capellini, W.Masselink, W. Ren, Z. Ye, M. Lehmann, T. Schülli, T. Schroeder and M. - I. RichardPhys. Rev. Applied 11, 064046 – 2019