Leibniz-Institut für Kristallzüchtung

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Temperature dependence of the emission cross-section and fluorescence lifetime in Cr:LiCAF, Cr:LiSAF, and Cr:LiSGaF between 78 K and 618 KS. Okuyucu, J. Thesinga, H. Tanaka, Y. Ozturk, F. X. Kartner, M. Pergament, and U. DemirbasOptical Materials Express 13 (5), 1211-1227 (2023)

Nucleation and Crystallization of Ferrous Phosphate Hydrate via an Amorphous IntermediateA. Paskin, T. Couasnon, J. P. H. Perez, S. S. Lobanov, R. Blukis, S. Reinsch, and L. G. BenningJournal of the American Chemical Society 145 (28), 15137-15151 (2023)

Valley-orbit splitting of lithium-related donors in siliconS. G. Pavlov, N. V. Abrosimov, and H. W. HubersPhysical Review B 107 (11) (2023)

Preparation and Investigation of Micro-Transfer-Printable Single-Crystalline InP Coupons for Heterogeneous Integration of III-V on SiI. Peracchi, C. Richter, T. Schulz, J. Martin, A. Kwasniewski, S. Klager, C. Frank-Rotsch, P. Steglich, and K. StolzeCrystals 13 (7) (2023)

Diffusion of Magnesium in Czochralski SiliconL. M. Portsel, A. N. Lodygin, N. V. Abrosimov, and Y. A. AstrovPhysica Status Solidi a-Applications and Materials Science 220 (13) (2023)

Electromechanical Behavior of Al/Al₂O₃ Multilayers on Flexible Substrates: Insights from In Situ Film Stress and Resistance MeasurementsB. Putz, T. E. J. Edwards, E. Huszar, P. A. Gruber, K. P. Gradwohl, P. Kreiml, D. M. Tobbens, and J. MichlerAdvanced Engineering Materials 25 (2) (2023)

Effect of pulse-current-based protocols on the lithium dendrite formation and evolution in all-solid-state batteriesV. Reisecker, F. Flatscher, L. Porz, C. Fincher, J. Todt, I. Hanghofer, V. Hennige, M. Linares-Moreau, P. Falcaro, S. Ganschow, S. Wenner, Y. M. Chiang, J. Keckes, J. Fleig, and D. RettenwanderNature Communications 14 (1) (2023)

A model heterostructure with engineered Berry curvatureN. J. Schreiber, L. D. Miao, B. H. Goodge, L. F. Kourkoutis, K. M. Shen, and D. G. SchlomApl Materials 11 (6) (2023)

Molecular beam epitaxy of KTaO₃T. Schwaigert, S. Salmani-Rezaie, M. R. Barone, H. Paik, E. Ray, M. D. Williams, D. A. Muller, D. G. Schlom, and K. AhadiJournal of Vacuum Science & Technology A 41 (2) (2023)

Real-space imaging of periodic nanotextures in thin films via phasing of diffraction dataZ. M. Shao, N. Schnitzer, J. Ruf, O. Y. Gorobtsov, C. Dai, B. H. Goodge, T. N. Yang, H. Nair, V. A. Stoica, J. W. Freeland, J. P. Ruff, L. Q. Chen, D. G. Schlom, K. M. Shen, L. F. Kourkoutis, and A. SingerProceedings of the National Academy of Sciences of the United States of America 120 (28) (2023)

Why thermal laser epitaxy aluminum sources yield reproducible fluxes in oxidizing environmentsT. J. Smart, F. V. E. Hensling, D. Y. Kim, L. N. Majer, Y. E. Suyolcu, D. Dereh, D. G. Schlom, D. Jena, J. Mannhart, and W. BraunJournal of Vacuum Science & Technology A 41 (4) (2023)

Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction ImagingT. Straubinger, C. Hartmann, M. P. Kabukcuoglu, M. Albrecht, M. Bickermann, A. Klump, S. Bode, E. Hamann, S. Haaga, M. Hurst, T. Schroder, D. Hanschke, and C. RichterCrystal Growth & Design (2023)

Investigation of Doping Processes to Achieve Highly Doped Czochralski Germanium IngotsA. Subramanian, N. Abrosimov, A. Gybin, C. Guguschev, U. Juda, A. Fiedler, F. Baerwolf, I. Costina, A. Kwasniewski, A. Dittmar, and R. R. SumathiJournal of Electronic Materials 52 (8), 5178-5188 (2023)

Development of Large-Diameter and Very High Purity Ge Crystal Growth Technology for DevicesR. R. Sumathi, A. Gybin, K. P. Gradwohl, P. C. Palleti, M. Pietsch, K. Irmscher, N. Dropka, and U. JudaCrystal Research and Technology (2023)

Enhancement-mode vertical (100) beta-Ga₂O₃ FinFETs with an average breakdown strength of 2.7 MV cm^-1K. Tetzner, M. Klupsch, A. Popp, S. Bin Anooz, T. S. Chou, Z. Galazka, K. Ickert, M. Matalla, R. S. Unger, E. B. Treidel, M. Wolf, A. Trampert, J. Wurfl, and O. HiltJapanese Journal of Applied Physics 62 (SF) (2023)

Ge-ion implantation and activation in (100) beta-Ga₂O₃ for ohmic contact improvement using pulsed rapid thermal annealingK. Tetzner, A. Thies, P. Seyidov, T. S. Chou, J. Rehm, I. Ostermay, Z. Galazka, A. Fiedler, A. Pnopp, J. Wurfl, and O. HiltJournal of Vacuum Science & Technology A 41 (4) (2023)

Stimulated-emission cross-sections of trivalent erbium ions in the cubic sesquioxides Y₂O₃, Lu₂O₃, and Sc₂O₃A. Uvarova, P. Loiko, S. Kalusniak, E. Dunina, L. Fomicheva, A. Kornienko, S. Balabanov, A. Braud, P. Camy, and C. KrankelOptical Materials Express 13 (5), 1385-1400 (2023)

Set/Reset Bilaterally Controllable Resistance Switching Ga-doped Ge₂Sb₂Te₅ Long-Term Electronic Synapses for Neuromorphic ComputingQ. Wang, R. Luo, Y. K. Wang, W. C. Fang, L. Y. Jiang, Y. Y. Liu, R. B. Wang, L. Y. Dai, J. Y. Zhao, J. S. Bi, Z. H. Liu, L. B. Zhao, Z. D. Jiang, Z. T. Song, J. Schwarzkopf, T. Schroeder, S. L. Wu, Z. G. Ye, W. Ren, S. N. Song, and G. NiuAdvanced Functional Materials 33 (19) (2023)

Recrystallization of MBE-Grown MoS₂ Monolayers Induced by Annealing in a Chemical Vapor Deposition FurnaceR. B. Wang, N. Koch, J. Martin, and S. SadofevPhysica Status Solidi-Rapid Research Letters 17 (5) (2023)

Y-Stabilized ZrO₂ as a Promising Wafer Material for the Epitaxial Growth of Transition Metal DichalcogenidesR. B. Wang, M. Schmidbauer, N. Koch, J. Martin, and S. SadofevPhysica Status Solidi-Rapid Research Letters (2023)

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