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Advanced coherent X-ray diffraction and electron microscopy of individual InP nanocrystals on Si nanotips for III-V on Si electronics and optoelectronicsG. Niu, S. Leake, O. Skibitzki, T. Niermann, J. Carnis, F. Kießling, F. Hatami, E. H. Hussein, M. A. Schubert, P.Zaumseil, G. Capellini, W.Masselink, W. Ren, Z. Ye, M. Lehmann, T. Schülli, T. Schroeder and M. - I. RichardPhys. Rev. Applied 11, 064046 – 2019
Validation of a 3D mathematical model for feed rod melting during floating zone Si crystal growthM. Plate, Dadzis, Kaspars; Krauze, Armands; Menzel, Robert; Virbulis, JanisJournal of Crystal Growth ,Volume 521, 1 September 2019, Pages 46-49
Demonstration of a picosecond Bragg switch for hard X-rays in a synchrotron-based pump-probe experimentM. Sander, Bauer, Roman; Kabanova, Victoria; Levantino, Matteo; Wulff, Michael; Pfuetzenreuter, Daniel; Schwarzkopf, Jutta; Gaal, PeterJ. Synchrotron Rad. (2019). 26, 1253-1259
Huge impact of compressive strain on phase transition temperatures in epitaxial ferroelectric KxNa1-xNbO3 thin filmsL. v. Helden, Bogula, L.; Janolin, P. -E.; Hanke, M.; Breuer, T.; Schmidbauer, M.; Ganschow, S.; Schwarzkopf, J.Appl. Phys. Lett. 114, 232905
DLTS Investigation of the Energy Spectrum of Si:Mg CrystalsN. Yarkin, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. WeberSemiconductors, 2019, Vol. 53, No. 6, pp. 789–794
Role of hole confinement in the recombination properties of InGaN quantum structuresM. anikeeva, Albrech, M.; Mahler, F.; Tomm, J. W.; Lymperakis, L.; Cheze, C.; Calarco, R.; Neugebauer, J.; Schulz, T.Scientific Reports volume 9, Article number: 9047 (2019)
Impact of optically induced carriers on the spin relaxation of localized electron spins in isotopically enriched siliconM. Beck, N. V. Abrosimov, J. Hübner, M. OestreichPHYSICAL REVIEW B 99, 245201 (2019)
High field-emission current density from β-Ga2O3 nanopillarsA. Grillo, Julien Barrat, Z.Galazka, M. Passacantando, F. Giubileo, L. Iemmo, G. Luongo, F. Urban, C. Dubourdieu, A. BartolomeoAppl. Phys. Lett. 114, 193101 (2019)
Asymmetry of the Atomic Core Structure of Dissociated a-Screw Dislocation in GaN Probed by Polarization Optical SpectroscopyO. Medvedev, M. Albrecht, O. VyvenkoRapid Research Letter, Vol. 13, Issue 9,1900169
Sub-100-fs Kerr lens mode-locked Yb:Lu2O3 thin-disk laser oscillator operating at 21 W average powerN. Modsching, J. Drs., J. Fischer, C. Paradis, F. Labaye, M. Gaponenko, C. Kränkel, V. J. Wittwer, and T. SüdmeyerOptics Express Vol. 27, Issue 11, pp. 16111-16120 (2019)
The electronic structure and the formation of polarons in Mo-doped BiVO4 measured by angle-resolved photoemission spectroscopyM. Kohamed, May, Matthias M.; Kanis, Michael; Bruetzam, Mario; Uecker, Reinhard; van de Krol, Roel; Janowitz, Christoph; Mulazzi, MattiaRSC Adv., 2019,9, 15606-15614
Photoelectron spectroscopic study of electronic states and surface structure of an in situ cleaved In2O3 (111) single crystalT. Nagata, O. Bierwagen, Z. Galazka, M. Imura, S. Ueda, Y. Yamashita, T. ChikyowJapanese Journal of Applied Physics 58, SDDG06 (2019)
Feasibility study of the production of bulk stable Ge isotopes by the hydrogen plasma chemical reduction of fluoridesP. G. Sennikov, R.A. Kornev, N. V. Abrosimov, A.D. Bulanov, V.A. Gavva, A. M. PotapovMaterials Science and Engineering: B Volume 244, May 2019, Pages 1-5
Dielectric, piezoelectric and elastic constants of Ca3TaGa3Si2O14 single crystals at elevated temperaturesY. Suhaka, Michal Schulza, Andrei Sotnikovb, Hagen Schmidtb, Steffen Ganschowc, Sergey Sakharovd, and Holger Fritzea Steffen Ganschowc, Sergey Sakharovd, and Holger FritzeaFerroelectrics, 8 537 (2018) 255–263
Thermodynamic Investigation of Ternary Delafossite CrystalsN. Wolff, Klimm, Detlef; Ganschow, Steffen; Siche, DietmarCrystal Research and Technology, Volume54, Issue7 July 2019, 1900036
Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum WellsM. H. Zoellner, Chahine, Gilbert Andre; Lahourcade, Lise; Mounir, Christian; Manganelli, Costanza Lucia; Schulli, Tobias Urs; Schwarz, Ulrich Theodor; Zeisel, Roland; Schroeder, ThomasACS Applied Materials & Interfaces , 2019, 11, 25, 22834–22839
Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in siliconR. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, M. L. W. ThewaltPhysical Review B 99, 195207 (2019)
Indium incorporation in homoepitaxial β- Ga2O3 thin films grown by metal organic vapor phase epitaxyS. Bin Anooz, A. Popp, R. Grüneberg, C. Wouters, R. Schewski, M. Schmidbauer, M. Albrecht, A. Fiedler, M. Ramsteiner, D. Klimm, K. Irmscher, Z. Galazka, and G. WagnerJournal of Applied Physics 125, 195702 (2019)
Cross sections and transition intensities of Tb3+ in KY(WO4)2M. Demesh, A. Mudryi, A. Pavlyuk, E. Castellano-Hernández, C. Kränkel, and N. KuleshovOSA Continuum Vol. 2, Issue 4, pp. 1378-1385 (2019)
Stabilization of sputtered AlN/sapphire templates during high temperature annealingS. Hagedorn, Walde, S.; Mogilatenko, A.; Weyers, M.; Cancellara, L.; Albrecht, M.; Jaeger, D.Journal of Crystal Growth, Volume 512, 15 April 2019, Pages 142-146