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Synthesis and characterization of the novel antiferromagnet LaNiB3O7K. M. Powderly, ShuGuo, KarolineStolze, Elizabeth M.Carnicom, R.J.CavaJournal of solid state chemistry, Volume 272, April 2019, Pages 113-117
Decomposition of a Solid Solution of Interstitial Magnesium in SiliconV. B. Shuman, A. N. Lodygin, L. M. Portsel, A. A. Yakovleva, N. V. Abrosimov, Yu. A. AstrovSemiconductors, 2019, Vol. 53, pp. 296–297
Characterization of the Si:Se+ Spin-Photon InterfaceA. DeAbreu, Camille Bowness, Rohan J.S. Abraham, Alzbeta Medvedova, Kevin J. Morse, Helge Riemann, Nikolay V. Abrosimov, Peter Becker, Hans-Joachim Pohl, Michael L.W. Thewalt, and Stephanie SimmonsPhys. Rev. Applied 11, 044036
Static Dielectric Constant of ß-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)A. Fiedler, R. Schewski, Z. Galazka, and K. IrmscherECS Journal of Solid State Science and Technology, 8 (7) Q3083-Q3085 (2019)
A novel 3D printed radial collimator for x-ray diffraction S. Kowarik, L. Bogula, S. Boitano, F. Carlà, H. Pithan, P. Schäfer, H. Wilming, A. Zykov, and L. Pithan4Review of Scientific Instruments 90, 035102 (2019)
Simulation of grain evolution in solidification of silicon on meso-scopic scaleX. Qi, Lijun Liub, Thècle Riberi-Béridot, Nathalie Mangelinck-Noël, Wolfram MillerComputational Materials Science 159 (2019) 432–439
Longitudinal phonon plasmon mode coupling in β-Ga2O3M. Schubert, A. Mock, R.Korlacki, S. Knight, Z. Galazka, G. Wagner, V. Wheeler, M. Tadjer, K. Goto, V. DarakchievaAppl. Phys. Lett. 114, 102102 (2019)
High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer sourceM. Wienold, S. G. Pavlov, N. V. Abrosimov, H.-W. HübersAppl. Phys. Lett. 114, 092103 (2019);
Modeling anisotropic shape evolution during Czochralski growth of oxide single crystalsM. wienold, Pavlov, S. G.; Abrosimov, N. V.; Huebers, H. -W.Appl. Phys. Lett. 114, 092103 (2019)
ß-Ga2O3:Ce as a fast scintillator: An unclear role of ceriumW. Drozdowski, Michał Makowski, Marcin E. Witkowski, Andrzej J. Wojtowicz, Zbigniew Galazka, Klaus Irmscher, Robert SchewskiRadiation Measurements 121 (2019) 49–53
Cooperative effects of strain and electron correlation in epitaxial VO2 and NbO2W.-C. Lee, Matthew J. Wahila, Shantanu Mukherjee, Christopher N. Singh, Tyler Eustance, Anna Regoutz, H. Paik, Jos E. Boschker, Fanny Rodolakis, Tien-Lin Lee, D. G. Schlom, and Louis F. J. PiperJournal of Applied Physics 125, 082539 (2019)
Temperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin filmsJ. Boy, M. Handwerg, R.Ahrling , R. Mitdank, G. Wagner, Z. Galazka, S. F. FischerAPL Mater. 7, 022526 (2019)
The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline siliconI. Buchovska, Natasha Dropka, Stefan Kayser, Frank M.KiesslingJournal of Crystal Growth 507 (2019) 299–306
Thermal analysis and crystal growth of doped Nb2O5J.Hidde, Christo Guguscheva, Detlef Klimma,Journal of Crystal Growth 509 (2019) 60–65
Investigation of the Nd2O3-Lu2O3-Sc2O3 phase diagram for the preparation of perovskite-type mixed crystals NdLu1-xScxO3T. Hirsch, Detlef Klimm, Christo Guguschev, Albert Kwasniewski, Steffen GanschowJournal of Crystal Growth 505 (2019) 38–43
Crystal Defect Analysis in AlN Layers Grown by MOVPE on Bulk AlNA. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. BickermannJ. Crystal Growth, 505 (2018) 69-73
The electronic structure of epsilon-Ga2O3M. Mulazzi, F. Reichmann, A. Becker, W. M. Klesse, P. Alippi, V. Fiorentini, A. Parisini, M. Bosi, R. FornariAPL Materials 7, 022522 (2019);
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopyG. Niu, P. Calka, P. Huang, S. Sharath, S. Petzold, A.Gloskovskii, K. Fröhlich, Y. Zhao, J. Kang, M. Schubert, F. Bärwolf, W. Ren, Z. -G. Ye, E. Perez, C. Wenger, L. Alff and T. SchroederMaterials Research Letters Volume 7, 2019 - Issue 3, Pages 117-123
Even-Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in SiliconS. G. Pavlov, N. V. Abrosimov, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Y. A. Astrov, R. Kh. Zhukavin, V. N. Shastin, K. Irmscher, A. Pohl, H.-W. HübersPhys. Status Solidi B 2019, 256, 1800514
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter ExcitationR. Kh. Zhukavin, S. G. Pavlov, A. Pohl, N. V. Abrosimov, H. Riemann, B. Redlich, H.-W. Hübers, V. N. ShastinSemiconductors volume 53, pages1255–1257(2019)