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Characterization of 30 76Ge enriched Broad Energy Ge detectors for GERDA Phase IIM. Agostini, A. M. Bakalyarov, E. Andreotti, M. Balata, I. Barabanov, L. Baudis, N. Barros, C. Bauer, E. Bellotti, S. Belogurov, G. Benato, A. Bettini, L. Bezrukov, T. Bode, D. Borowicz, V. Brudanin, R. Brugnera, D. Budjáš, A. Caldwell, C. Cattadori, A. Chernogorov, V. D’Andrea, E. V. Demidova, N. Di Marco, A. Domula, E. Doroshkevich, V. Egorov, R. Falkenstein, K. Freund, A. Gangapshev, A. Garfagnini, C. Gooch, P. Grabmayr, V. Gurentsov, K. Gusev, J. Hakenmüller, A. Hegai, M. Heisel, S. Hemmer, R. Hiller, W. Hofmann, M. Hult, L. V. Inzhechik, J. Janicskó Csáthy, J. Jochum, M. Junker, V. Kazalov, Y. Kermaïdic, T. Kihm, I. V. Kirpichnikov, A. Kirsch, A. Kish, A. Klimenko, R. Kneißl, K. T. Knöpfle, O. Kochetov, V. N. Kornoukhov, V. V. Kuzminov, M. Laubenstein, A. Lazzaro, B. Lehnert, Y. Liao, M. Lindner, I. Lippi, A. Lubashevskiy, B. Lubsandorzhiev, G. Lutter, C. Macolino, B. Majorovits, W. Maneschg, G. Marissens, M. Miloradovic, R. Mingazheva, M. Misiaszek, P. Moseev, I. Nemchenok, K. Panas, L. Pandola, K. Pelczar, A. Pullia, C. Ransom, S. Riboldi, N. Rumyantseva, C. Sada, F. Salamida, M. Salathe, C. Schmitt, B. Schneider, S. Schönert, A.-K. Schütz, O. Schulz, B. Schwingenheuer, O. Selivanenko, E. Shevchik, M. Shirchenko, H. Simgen, A. Smolnikov, L. Stanco, L. Vanhoefer, A. A. Vasenko, A. Veresnikova, K. von Sturm, V. Wagner, A. Wegmann, T. Wester, C. Wiesinger, M. Wojcik, E. Yanovich, I. Zhitnikov, S. V. Zhukov, D. Zinatulina, A. J. Zsigmond, K. Zuber, G. Zuzel European Physical Journal C (2019), Bd. 79, Article 978
Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial β-Ga2O3 Grown by MOVPES. Bin Anooz, A. Popp, R. Grüneberg, A. Fiedler, K. Irmscher, R.Schewski, M. Albrecht, Z.Galazka, G. Wagner2019 Compound Semiconductor Week (CSW)
Step-flow growth in homoepitaxy of ß- Ga2O3 (100)—The influence of the miscut direction and faceting R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. AlbrechtAPL Materials 7, 022515 (2019)
β-Ga2O3:Ce as a fast scintillator: An unclear role of ceriumW. Drozdowski, M. Makowski, M. E. Witkowski, A. J. Wojtowicz, Z. Galazka, K. Irmscher, R. SchewskiRadiation Measurements 121 (2019) 49–53
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge1V. V. Emtsev, N. V. Abrosimov, V. V. Kozlovski, D. S. Poloskin, G. A. OganesyanaSemiconductors , 52 (2018) 1677-1685
Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shiftM. Feneberg, C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, R. GoldhahnAPL Materials 7, 022508 (2019);
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystalsZ. Galazka, S. Ganschow, R. Schewski, K. Irmscher, D. Klimm, A. Kwasniewski, M. Pietsch, A. Fiedler, I. Schulze-Jonack, M. Albrecht, T. Schröder, M. BickermannAPL Materials 7, 022512 (2019)
Tri-carbon defects in carbon doped GaNK. Irmscher, I. Gamov , E. Nowak , G. Gärtner, F. Zimmermann, F. C. Beyer, E. Richter, M. Weyers, G. TränkleAppl. Phys. Lett. 113, 262101 (2018);
Faceting and metal-exchange catalysis in (010) beta-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxyP. Mazzolini, Vogt, P.; Schewski, R.; Wouters, C.; Albrecht, M.; Bierwagen, O.APL Materials 7, 022511 (2019)
Influence of Mg-codoping, non-stoichiometry and Ga-admixture on LuAG:Ce scintillation propertiesJ. Pejchal, J. Barta, V. Babin, A. Beitlerova, P. Prusa, R. Kucerkova, D. Panek, T. Parkman, C. Guguschev, L. Havlak, P. Zemenova, K. Kamada, A. YoshikawaOptical Materials 86 (2018) 213–232
Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaicsF. Ringleb, S. Andree, B. Heidmann, J. Bonse, K. Eylers, O. Ernst, T. Boeck, M. Schmid, J. KrügerBeilstein Journal of Nanotechnology 9 (2018) 3025-3038
Step-flow growth in homoepitaxy of β-Ga2O3(100)—The influence of the miscut direction and facetingR. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, M. AlbrechtAPL Mater. 7, 022515 (2019)
Local Strain and Crystalline Defects in GaN/AIGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AIGaN Buried LayersH. V. Stanchu, Kuchuk, Andrian V.; Mazur, Yuriy I.; Li, Chen; Lytvyn, Petro M.; Schmidbauer, Martin; Maidaniuk, Yurii; Benamara, Mourad; Ware, Morgan E.; Wang, Zhiming M.; Salamo, Gregory J.Cryst. Growth Des. 2019, 19, 1, 200–210
Modeling anisotropic shape evolution during Czochralski growth of oxide single crystalsO. Weinstein, Alexander Virozub, Wolfram Miller, Simon BrandonJournal of Crystal Growth 509, Volume 509, 1 March 2019, Pages 71-86
The inverse perovskite BaLiF3: single-crystal neutron diffraction and analyses of potential ion pathwaysD. Wiedemann, F. Meutzner, O. Fabelo, and S. Ganschow Acta Crystallographica, B74 (2018) 643-650
Mg-pair isoelectronic bound exciton identified by its isotopic fingerprint in 28SiR. J. S. Abraham, A. DeAbreu,K. J. Morse,V. B. Shuman,L. M. Portsel,A. N. Lodygin,Yu. A. Astrov, N.V. Abrosimov, S.G. Pavlov, H.-W. Hübers, S. Simmons, M.L.W. ThewaltPhysical Review B 98, 205203 (2018)
Heteroepitaxial Growth of T-Nb2O5 on SrTiO3Jos E. Boschker, Toni Markurt, Martin Albrecht and Jutta SchwarzkopfNanomaterials 2018, 8(11), 895
The influence of travelling magnetic field on phosphorus distribution in ntype multi-crystalline siliconI. Buchovska, Natasha Dropka, Stefan Kayser, Frank M. KiesslingJournal of Crystal Growth 507 (2019) 299–306
Highly enriched 28Si reveals remarkable optical linewidths and fine structure for well-known damage centersC. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, M. L. W. ThewaltPhysical Review B, 98 (2018) 195201
Chemical, Structural, and Electronic Characterization of the (010) Surface of Single Crystalline Bismuth VanadateM. Favaro, Uecker, Reinhard; Nappini, Silvia; Pis, Igor; Magnano, Elena; Bluhm, Hendrik; van de Krol, Roel; Starr, David E.J. Phys. Chem. C 2019, 123, 13, 8347–8359