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Efficient directly emitting high-power Tb3+:LiLuF4 laser operating at 587.5 nm in the yellow range E. Castellano- Hernández, Philip W. Metz, Maxim Demesh, and Christian Kränkel Optics Letters Vol. 43, Issue 19, pp. 4791-4794 (2018)
Efficient directly emitting high-power Tb3+:LiLuF4 laser operating at 587.5 nm in the yellow range E. Castellano-Hernández, P. W. Metz, M. Demesh, C. Kränkel Optics Letters, 43 (2018) 4791-4794
Thermal expansion of single-crystalline ß-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffractionZ. Cheng, Michael Hanke, Zbigniew Galazka, and Achim TrampertAppl. Phys. Lett. 113, 182102 (2018)
Physical vapor transport growth of bulk Al1-xScxN single crystals A. Dittmar, J. Wollweber, M. Schmidbauer, D. Klimm, C. Hartmann, M. BickermannJournal of Crystal Growth, 500 (2018) 74-79
In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growthC. Ehlers, S. Kayser, D. Uebel, R. Bansen, T. Markurt, Th. Teubner, K. Hinrichs, O. Ernst, T. BoeckCrystEngComm 20 (2018) 7170 - 7177
ß- Ga2O3 for wide-bandgap electronics and optoelectronicsZ. Galazka Semiconductor Science and Technology 33(11) 2018 - Topical Review
Investigation of the Nd3O2–Lu2O3–Sc2O3 phase diagram for the preparation of perovskite-type mixed crystals NdLu1-xScxO3T. Hirsch, Christo Guguschev, Albert Kwasniewski, Steffen Ganschow, Detlef KlimmJournal of Crystal Growth 505 (2019) 38–43
Carrier-envelope offset frequency stabilization of a thin-disk laser oscillator operating in the strongly self-phase modulation broadened regimeN. Modsching, C. Paradis, P. Brochard, N. Jornod, K. Gürel, C. Kränkel, S. Schilt, V. J. Wittwer, and T. SüdmeyerOptics Express Vol. 26, Issue 22, pp. 28461-28468 (2018)
Broadband terahertz pulse generation driven by an ultrafast thin-disk laser oscillatorC. Paradis, J. Drs, N. Modsching, O. Razskazovskaya, F. Meyer, C. Kränkel, C. J. Saraceno, V. J. Wittwer, and T. SüdmeyerOptics Express Vol. 26, Issue 20, pp. 26377-26384 (2018)
Competing Inversion-Based Lasing and Raman Lasing in Doped SiliconS. G. Pavlov, N. Deßmann, B. Redlich, A. F. G. van der Meer, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, and H.-W. HübersPHYSICAL REVIEW X 8, 041003 (2018)
Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-methodH. J. Rost, R. Menzel, D. Siche, U. Juda, S. Kayser, F.M. Kießling, L. Sylla, T. RichterJournal of Crystal Growth 500 (2018) 5–10
Enhanced magnon spin transport in NiFe2O4 thin films on a lattice-matched substrateA. V. Singh, L. Liang, L. J. Cornelissen, Z. Galazka, A. Gupta, B. J. van Wees, and T. KuschelAppl. Phys. Lett. 113, 162403 (2018)
Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantationK. Tetzner, Andreas Thies, Eldad Bahat Treidel, Frank Brunner, Günter Wagner,Joachim WürflAppl. Phys. Lett. 113, 172104 (2018)
III ArsenideCh. Frank-Rotsch, Natasha Dropka, Peter RotschBook: Single Crystals of Electronic Materials, (18-043)
Interface control by rotating submerged heater/baffle in vertical Bridgman configurationA. G. Ostrogorsky, A.G.Ostrogorsky V.Riabov N.DropkaJournal of Crystal Growth 498 (2018) 269-276
Intentional polarity conversion of AlN epitaxial layers by oxygen N. Stolyarchuk, T. Markurt, A. Courville, K. March, J. Zúñiga-Pérez, P. Vennéguès, M. AlbrechtScientific Reports, 8 (2018) 14111
Pseudomorphic spinel ferrite films with perpendicular anisotropy and low dampingR. C. Budhani, S. Emori, Z. Galazka, B. A. Gray, M. Schmitt, J. J. Wisser, H.-M. Jeon, H. Smith, P. Shah, M. R. Page, M. E. McConney, Y. Suzuki, B. M. HoweApplied Physics Letters 113 (2018) 182102
Interplay of cation ordering and thermoelastic properties of spinel structure MgGa2O4C. Hirschle, J. Schreuer, Z. GalazkaJournal of Applied Physics, 124 (2018) 065111
Radii of Rydberg states of isolated silicon donorsJ. Li, Nguyen H. Le, K. L. Litvinenko, S. K. Clowes, H. Engelkamp, S. G. Pavlov, H.-W. Hübers, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, C. R. Pidgeon, A. Fisher, Zaiping Zeng, Y.-M. Niquet, and B. N. MurdinPHYSICAL REVIEW B 98, 085423 (2018)
Photoluminescence from GeSn nano- heterostructuresV. Schlykow, Peter Zaumseil, Markus Andreas Schubert, Oliver Skibitzki, Yuji Yamamoto, Wolfgang Matthias Klesse, Yaonan Hou, Michele Virgilio, Monica De Seta, Luciana Di Gaspare, Thomas Schroeder and Giovanni CapelliniNanotechnology 29 (2018) 415702 (8pp)