Leibniz-Institut für Kristallzüchtung

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Aluminium self-diffusion in high-purity a-Al₂O₃: Comparison of Ti-doped and undoped single crystalsP. Fielitz, Steffen Ganschow, Klemens Kelm, Günter BorchardtActa Materialia 195 (2020) 416-424

Investigation of Au droplet formation and growth of Si_xGe_1-x nanowires by molecular beam epitaxyF. Lange, Owen C. Ernst, Thomas Teubner and Torsten BoeckCrystEngComm 22 (2020) 6322

Kinetic Monte Carlo model for homoepitaxial growth of Ga₂O₃W. Miller, Dennis Meiling, Robert Schewski, Andreas Popp, Saud Bin Anooz, and Martin AlbrechtPhys. Rev. Research 2 (2020) 033170

GaAs solar cells grown on intentionally contaminated GaAs substratesJ. Simon, Christiane Frank-Rotsch, Karoline Stolze, Matthew Young, Myles A. Steiner, Aaron J. PtakJournal of Crystal Growth 541 (2020) 125668

Influence of impurities from SiC and TiC crucible cover on directionally solidified siliconN. Dropka, Iryna Buchovska, Ulrich Degenhardt, Frank M.KiesslingJournal of Crystal Growth 542 (2020) 125692

Semiconductor scintillator development: Pure and doped β-Ga₂O₃W. Drozdowski, Michał Makowski, Marcin E.Witkowski, Andrzej J.Wojtowicz, RobertSchewski, Klaus Irmscher, ZbigniewGalazkaOptical Materials 105 (2020) 109856

The Electronic Conductivity of Single Crystalline Ga-Stabilized Cubic Li₇La₃Zr₂O₁₂: A Technologically Relevant Parameter for All-Solid-State BatteriesM. Philipp, Bernhard Gadermaier, Patrick Posch, Ilie Hanzu, Steffen Ganschow, Martin Meven, Daniel Rettenwander, Günther J. Redhammer, and H. Martin R. WilkeningAdv. Mater. Interfaces 7(16) (2020) 2000450

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growthO. C. Ernst, F. Lange, Th. Teubner, T. BoeckBeilstein J. Nanotechnol. 11 (2020) 1371–1380

Output characteristics of Pr:YAlO₂ and Pr:YAG lasers pumped by high-power GaN laser diodesS. Fujita, Hiroki Tanaka, AND Fumihiko KannariApplied Optics 59 (17) (2020) 5124-5130

TiSr antisite: An abundant point defect in SrTiO₃A. Karjalainen, Vera Prozheeva, Ilja Makkonen , Christo Guguschev, Toni Markurt, Matthias Bickermann , and Filip TuomistoJournal of Applied Physics 127 (2020) 245702

Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopyI. Levine, I. Gamov, M. Rusu, K. Irmscher, C. Merschjann, E. Richter, M. Weyers, and Th. DittrichPhysical Review, B 101 (2020) 245205

Imprinting Ferromagnetism and Superconductivity in Single Atomic Layers of Molecular SuperlatticesZ. Li, Xiuying Zhang, Xiaoxu Zhao, Jing Li, Tun Seng Herng, Haomin Xu, Fanrong Lin, Pin Lyu, Xinnan Peng, Wei Yu, Xiao Hai, Cheng Chen, Huimin Yang, Jens Martin, Jing Lu, Xin Luo, A. H. Castro Neto, Stephen J. Pennycook, Jun Ding, Yuanping Feng, and Jiong LuAdvanced Materials 32 (2020) 1907645

Approaching the high intrinsic electrical resistivity of NbO₂ in epitaxially grown filmsJ. Stoever, Jos E. Boschker , Saud Bin Anooz , Martin Schmidbauer , Peter Petrik , Jutta Schwarzkopf , Martin Albrecht , and Klaus IrmscherAppl. Phys. Lett. 116 (2020) 182103

Low-frequency spin qubit energy splitting noise in highly purified ²⁸Si/SiGeT. Struck, Arne Hollmann, Floyd Schauer, Olexiy Fedorets , Andreas Schmidbauer, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Łukasz Cywiński , Dominique Bougeard Lars R. Schreiber npj Quantum Information 6, (2020) 40

Step flow growth of β-Ga₂O₃ thin films on vicinal (100) β-Ga₂O₃ substrates grown by MOVPES. Bin Anooz, R. Grüneberg, C. Wouters , R. Schewski , M. Albrecht , A. Fiedler , K. Irmscher , Z. Galazka , W. Miller , G. Wagner, J. Schwarzkopf , and A. PoppAppl. Phys. Lett. 116 (2020) 182106

Charge carrier density, mobility, and Seebeck coefficient of melt-grown bulk ZnGa₂O₄ single crystalsJ. Boy, Martin Handwerg, Rüdiger Mitdank, Zbigniew Galazka , and Saskia F. FischerAIP Advances 10 (2020) 055005

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defectsI. Gamov, E. Richter, M. Weyers, G. Gärtner, and K. IrmscherJ. Appl. Phys. 127 (2020) 205701

Thin film transistors based on ultra-wide bandgap spinel ZnGa₂O₄Y. Jang, Seongyun Hong, Jihoon Seo, Hyeongmin Cho, Kookrin Char , and Zbigniew GalazkaAppl. Phys. Lett. 116 (2020) 202104

Investigation of the Magnesium Impurity in SiliconL. M. Portsel, V. B. Shuman, A. A. Lavrent’ev, A. N. Lodygin, N. V. Abrosimov, and Yu. A. AstrovSemiconductors 4 (2020)

Growth of heavily-doped Germanium single crystals for mid-Infrared applicationsR. Sumathi, Nikolay Abrosimov, Kevin-P. Gradwohl, Matthias Czupalla, Jörg FischerJournal of Crystal Growth 535 (2020) 125490

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