The winterschool will be a face-to-face event with opportunities for networking and possibility to visit the IKZ and its researchers. It will be held in English. For interested people that cannot attend we will broadcast the lectures to registered participants via Zoom.
This event is a cooperation between the Leibniz-Institut für Kristallzüchtung (IKZ) and the Fraunhofer Institute for Integrated Systems and Device Technology IISB
Venue:
Max-Born-Saal
Max-Born-Str. 2 A
12489 Berlin
The winterschool will be not affected by the announced strike of Berlin's public transport. Trains and S-Bahn are running, and you can reach Berlin-Adlershof station (800 m walk from winterschool site) from both the railway and flight terminals by S-Bahn running at least every 10 minutes (except 1am to 4am).
Energy transition for climate protection triggers a booming need for advanced power electronics; energy efficient power conversion is needed on all different power levels. The IKZ Winter School aims to provide an overview of existing a& upcoming materials and technology platforms (Float Zone Si, SiC, GaN, AlN , Ga2O3, Diamond).
The school is intended for master & PhD students as well as PostDocs with interest in materials science and device technology as well as industry researchers, developers and manages in the field. Internationally renowned speakers from academia and industry will present and discuss with you their fields of expertise.
Material | Materials Technology | Device Technology | |
FZ-Si | Götz Meisterernst Siltronic AG, Burghausen | tba | |
SiC | Birgit Kallinger Fraunhofer IISB, Erlangen | Daniel Alquier Univ. Tours, Frankreich | |
GaN | Sarad Thapa Siltronic AG, Burghausen | Jens Baringhaus Bosch | |
AlN | Matthias Bickermann, Carsten Hartmann IKZ, Berlin | Elke Meißner Fraunhofer IISB, Erlangen | |
Ga2O3 | Zbigniew Galazka IKZ, Berlin | Kornelius Tetzner FBH, Berlin | |
Diamond | Peter Knittel Fraunhofer IAF, Freiburg | tba |
Wednesday, February 28 | ||
1:00 pm | Arrival / Coffee | |
2:00 pm | Welcome | |
2:15 pm – 3:30 pm | "Float Zone Silicon for Power Applications" | Götz Meisterernst (Siltronic AG, Burghausen) |
3:30 pm – 4:45 pm | IKZ Institute visit / short guided tours | |
4:45 pm | Coffee break | |
5:30 pm – 6:45 pm | "SiC substrates and epitaxy for power electronic devices" | Birgit Kallinger (Fraunhofer IISB, Erlangen) |
Thursday, February 29 | ||
9:00 am – 10:15 am | "Process and device developments for SiC technology" | Daniel Alquier (GREMAN, Univ. Tours) |
10:15 am – 11:30 am | "GaN-on-Si for electronic devices" | Sarad Bahadur Thapa (Siltronic AG, Burghausen) |
11:30 am – 1:00 pm | Lunch break | |
1:00 pm – 2:15 pm | "GaN Power Transistors: Device Technology and Perspective for Automotive Applications" | Jens Baringhaus (Robert Bosch GmbH, Stuttgart) |
2:15 pm – 3:30 pm | "AlN substrates for UV and power applications" | Carsten Hartmann, Matthias Bickermann (IKZ, Berlin) |
3:30 pm | Coffee break | |
4:00 pm – 5:15 pm | "Materials Aspects in GaN / AlN bases power devices" | Elke Meißner (Fraunhofer IISB, Erlangen) |
5:15 pm – 6:30 pm | "Synthetic Diamond – A Wide-Bandgap Semiconductor for Electronics and Quantum Devices" | Peter Knittel (Fraunhofer IAF, Freiburg) |
Friday, March 01 | ||
9:00 am – 10:15 am | "Bulk crystals and films of β-Ga2O3: growth methods and current status" | Zbigniew Galazka (IKZ, Berlin) |
10:15 am – 11:30 am | "Overview on design, technology and characterization of β-Ga2O3 transistor devices" | Kornelius Tetzner (FBH Berlin) |
11:30 am – 12:15 pm | Wrap-up | |
12:30 pm | Departure | |
All times shown are CET (central european time) |
To register please send email with
to winter.school(at)ikz-berlin.de
Winter School participation is free of charge.
Participants are asked to organize their accommodation by themselves.
As the number of participants is limited early registration is recommended.
Organization:
Prof. Dr. Thomas Schröder & Prof. Dr. Matthias Bickermann
Ph: +49 (0)30 6392 3047
matthias.bickermann(at)ikz-berlin.de