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News_Überschrift_EN

Zchtungsmethode Quadrat
Development of a growth technology for defined local crystallization

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Galliumoxid Chip Quadrat
Beta-gallium oxide offers best prerequisites for next-generation power electronics

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Artificial inteligence in crystal growth quadr
Artificial Intelligence reaches Volume Crystal Growth

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Ba2ScNbO6
Ba2ScNbO6 as new substrate crystal for novel functional layers and applications

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logo ERC quadrat
IKZ researcher Kaspars Dadzis receives ERC Starting Grant

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AlN quadrat
Work Group Aluminiumnitrid: Launch of a new sublimation growth laboratory

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19 07 IOCG logo
Darrell Schlom and Reinhard Uecker awarded the IOCG Frank Prize

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IKZ Quadrat
Leibniz Association approves positive funding recommendation for IKZ in Berlin

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19 07 Phasen
Tailor-made strained piezoelectric oxide layers provide the basis for SAW sensors

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InGaN rechts
Role of hole confinement in the recombination properties of InGaN quantum structures

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Veranstaltungen_Überschrift_EN

  • 16-12-19, 2 pm Colloquium - Prof. Ulrich Theodor Schwarz: '(Al,In)GaN laser diodes dynamics from nanosecond to millisecond range'

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  • 20-12-19, 1 pm Colloquium - Prof. Dr. Dr. habil. Matthias Schubert: 'Strain, stress, alloying and defects in monoclinic gallium oxide and related compounds'

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  • 26-03-2020: Girls'Day! The IKZ will open its doors for this year's Girls'Day

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Scientists & postdocs

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  • 09-19: Scientific employee (m/f/d): „Growth and characterization of aluminum nitride (AlN) semiconductor crystals“

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Ph.D. students

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Students

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  • We regularly offer internships at various working groups of our institute as well as Bachelor and Master Theses

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