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- 2019/01 - Journal of Crystal Growth 505 (2019) 38–43: Investigation of the Nd 2 O 3 –Lu 2 O 3 –Sc 2 O 3 phase diagram for the preparation of perovskite-type mixed crystals NdLu 1−x Sc x O 3
- 2018/10 - PHYSICAL REVIEW X 8, 041003 (2018): Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon
- 2018/10 - Journal of Crystal Growth 500 (2018) 5–10: Defect formation in Si-crystals grown on large diameter bulk seeds by a modified FZ-method
- 2018/10 - Optical Materials 86 (2018) 213–232: Influence of Mg-codoping, non-stoichiometry and Ga-admixture on LuAG:Ce scintillation properties
- 2018/10 - Journal of Crystal Growth 500 (2018) 74–79: Physical vapor transport growth of bulk Al1−xScxN single crystals
- 2018/09 - Optics Letters Vol. 43, Issue 19, pp. 4791-4794 (2018): Efficient directly emitting high-power Tb3+:LiLuF4 laser operating at 587.5 nm in the yellow range
- 2018/09 - Book: Single Crystals of Electronic Materials, (18-043): III Arsenide
- 2018/09 - Scientific Reports (2018) 8:14111: Intentional polarity conversion of AlN epitaxial layers by oxygen
- 2018/09 - Journal of Crystal Growth 498 (2018) 269-276: Interface control by rotating submerged heater/baffle in vertical Bridgman configuration
- 2018/08 - PHYSICAL REVIEW B 98, 085423 (2018): Radii of Rydberg states of isolated silicon donors
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Family-friendly employer: IKZ receives again the certificate for the audit berufundfamilie
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- 19-11-18, 2 pm Colloquium Dr. Paul-Antoine Douissard: 'X-ray area detectors and scintillating screens for synchrotron applications'
- 03-12-18, 2 pm Colloquium Prof. Dr. Inga Fischer: 'Group-IV semiconductor nanostructures for optoelectronic device applications'
- 04-12-18, 2 pm Colloquium Dr. Andreas Grimm: 'Compound semiconductors in the Research Fab Microelectronics Germany (FMD)'
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