Leibniz-Institut für Kristallzüchtung - About us

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CRYSTALS FOR SCIENCE & RESEARCH

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SERVICE & CRYSTALS FOR COMMERCIAL USE

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Publications

2019/09 - Semiconductors, 2019, Vol. 53, No. 9, pp. 1234–1237: Chemical Shift and Exchange Interaction Energy of the 1_s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission
2019/09 - Journal of Crystal Growth: Fast forecasting of VGF crystal growth process by dynamic neural networks
2019/09 - Journal of Crystal Growth : Interface control in vertical Bridgman growth by shaped and flat rotating Baffles
2019/09 - Optical Materials Express Vol. 9, Issue 9, pp. 3627-3637 (2019): Selective etching of fs-laser inscribed high aspect ratio microstructures in YAG
2019/09 - Journal of Crystal Growth 528 (2019) 125263: Single crystal growth and characterization of Ba₂ScNbO₆ – A novel substrate for BaSnO₃ films
2019/09 - Optical Materials Express, Vol. 9, No. 9: Tailoring the scintillation properties of -Ga₂O₃ by doping with Ce and codoping with Si
2019/07 - Japanese Journal of Applied Physics 58, 080903 (2019): Photoelectron spectroscopic study on electronic state and electrical properties of SnO₂ single crystals
2019/06 - Semiconductors, 2019, Vol. 53, No. 6, pp. 789–794: DLTS Investigation of the Energy Spectrum of Si:Mg Crystals
2019/06 - Phys. Status Solidi B 2019, 256, 1800514: Even-Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in Silicon
2019/06 - Phys. Status Solidi A 2019, 216, 1900291: Features of the Formation of the B_iB_s Defect in Si

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News

Ba2ScNbO6

Ba₂ScNbO₆ as new substrate crystal for novel functional layers and applications

IKZ researcher Kaspars Dadzis receives ERC Starting Grant

AlN quadrat

Work Group Aluminiumnitrid: Launch of a new sublimation growth laboratory

Darrell Schlom and Reinhard Uecker awarded the IOCG Frank Prize

IKZ Quadrat

Leibniz Association approves positive funding recommendation for IKZ in Berlin

19 07 Phasen

Tailor-made strained piezoelectric oxide layers provide the basis for SAW sensors

InGaN rechts

Role of hole confinement in the recombination properties of InGaN quantum structures

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Events

28-10-19, 2 pm Colloquium - Laura Bogula: 'Using in situ Grazing Incidence X-Ray Diffraction to unravel the ferroelectric phase transition in anisotropically strained potassium-sodium-niobate / (110) neodymium-scandate epitaxial layers'
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Job Openings

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Scientists & postdocs

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09-19: Scientific employee (m/f/d): „Growth and characterization of aluminum nitride (AlN) semiconductor crystals“
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Technical and administrative staff

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10-19: Caretaker / receiving of goods (m/f/d)
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Ph.D. students

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10-19: PhD position (m/f/d): “Single crystal growth of pyrochlores with high dopant homogeneity and high structural quality”
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Students

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We regularly offer internships at various working groups of our institute as well as Bachelor and Master Theses
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