Special Equipment

Special Equipment & Methods

In addition to standardized laboratory equipment, the IKZ owns a range of special equipment and devices for the growth and characterization of crystalline materials.

Dr. Maike Schröder

Dr. Maike Schröder

Ph. +49 30 6392 3008

  • (Bridgman) / Vertical gradient freeze (VGF) - equipped with KristMAG® heater magnet modules
  • Czochralski growth - partly equipped with KristMAG® heater magnet modules
  • Edge-defined film-fed growth
  • Floating-Zone (FZ)
  • Flux and top seeded solution growth (TSSG) process
  • Levitation-assisted self-seeding crystal growth method
  • Micro pulling down
  • Pedestal growth
  • Physical vapor transport (PVT)

  • Liquid phase epitaxy (TDM, LPE)
  • Metalorganic chemical vapor deposition (liquid-delivery spin MOCVD)
  • Molecular beam epitaxy with solid sources (MBE) and gas sources (GSMBE)
  • Physical vapor deposition (PVD)
  • Pulsed laser deposition (PLD)
  • Vapour liquid solid (VLS)


    • Atomic force microscopy (AFM) – incl. piezoresponce force microscopy (PFM)
    • Confocal microscopy
    • Light microscopy
    • Scanning electron microscopy (with focused ion beam)
    • Transmission electron microscopy (TEM/STEM)


    Optics and Spectroscopy

    • EPR spectrometer with LHe-flow cryostat
    • ICP OES spectrometer
    • Laser scattering tomography
    • Micro-Raman spectrometer (325, 442, 488, 514, 633, 785 nm)
    • Optical cryostats
    • Optical transmission measuring station (254 nm)
    • Spectroscopic ellipsometry
    • UV-VIS-NIR spectrometer (180-3300 nm)
    • Vakuum FTIR spectrometer (8000-10 cm-1)
    • Vakuum UV spectrometer (115-230 nm)


    X-ray characterization

    • Energy-dispersive x-ray diffractometer
    • (High-resolution) x-ray diffractometer (with heating stage up to 1600 °C)
    • Laue-system for crystal orientation
    • Micro x-ray fluorescence analysis (µ-RFA)
    • X-ray projection topography with rotary anode


    Electrical Measurements

    • Capacitance-voltage (C-V) and current-voltage (I-V) profiling
    • Deep-level transient spectroscopy (DLTS) system
    • Hall-effect measurement system with cooling and heating unit (15 – 800 K)
    • Lateral photovoltage scanning (LPS) and photoluminescence (PL)



      • BET-system for internal surfaces measurements
      • Differential thermal analysis (DTA) (up to 2400 °C)
      • Ferroelectric tester with laser beam interferometer
      • Image processing device
      • Interferometer probe
      • Laser flash apparatur / pyrometer version for up to 2800 °C
      • MDPmap (mono- and multi-crystalline wafer lifetime measurement device)
      • Simultaneous thermal analysis (STA) equipment
      • Substrate preparation (thermal, chemical)
      • Surface profilometer (Dektak)

      • Diamond wire sawing (single and multi)
      • Inner diameter saw
      • Measuring instruments for surface topography and geometry analysis
        (MicroProof 300 from FRT, Quick Vision ELF from Mitutoyo)
      • Precision lapping and polishing machines for wafer sizes up to 6"
      • Precision surface grinder